Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material

Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material

Journal Pre-proof Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material Jayaraman Jayabharathi, Sekar Sivaraj,...

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Journal Pre-proof Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material Jayaraman Jayabharathi, Sekar Sivaraj, Venugopal Thanikachalam, Sekar Panimozhi, Jagathratchagan Anudeebhana

PII:

S1010-6030(19)31424-8

DOI:

https://doi.org/10.1016/j.jphotochem.2019.112229

Reference:

JPC 112229

To appear in:

Journal of Photochemistry & Photobiology, A: Chemistry

Received Date:

20 August 2019

Revised Date:

12 October 2019

Accepted Date:

7 November 2019

Please cite this article as: Jayabharathi J, Sivaraj S, Thanikachalam V, Panimozhi S, Anudeebhana J, Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material, Journal of Photochemistry and amp; Photobiology, A: Chemistry (2019), doi: https://doi.org/10.1016/j.jphotochem.2019.112229

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Red, green and blue phosphorescent organic light-emitting diodes with ITO-free anode material Jayaraman Jayabharathi*, Sekar Sivaraj, Panimozhi, Jagathratchagan Anudeebhana

Venugopal

Thanikachalam,

Sekar

Department of Chemistry, Annamalai University, Annamalainagar 608 002, Tamilnadu, India E-mail: [email protected].

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Graphical Abstract

Highlights 

Non-productive hole-current from RGB phosphorescent OLEDs was reduced by employing Ag NPs embedded glass:Ni-Ag-ZnO (SNSZO) anode enhanced the efficiencies



Blue device using SNSZO: Ir(fdbdi)3 exhibit maximum L- 42683 cd/m2, ηc- 43.6cd/A and ηp-45.3 lmW-1 with ηex- 20.2 %.



Green device with SNSZO: Ir(mnmpdi)2(acac) exhibit higher efficiency; L - 47238

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cd/m2, ηc -50.9 cd/A, ηp - 49. lm w-1 and ηex - 18.9% [ITO: Ir(mnmpdi)2(acac): L39326 cd/m2; ηc-46.0 cd/A; ηp -39.3 lm w-1; ηex -13.8 %]. 

Red device (620 nm) with SNSZO: Ir(mnpbi)2(acac) show L - 9058 cd/m2, ηc - 8.3

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cd/A, ηp -6.4 lm w-1 and ηex - 12.2 % [ITO: Ir(mnpbi)2(acac): L- 7632 cd/m2; ηc -4.1 cd/A; ηp -6.40 lm w-1; ηex -6.0 %].

The proposed OLEDs with SNSZO anode shows excellent efficiencies than ITO and

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providing alternate for high-performance OLEDs and other optoelectronic devices.

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Abstract

The non-productive hole-current from blue, green and red phosphorescent OLEDs

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was reduced by employing silver nanoparticles embedded glass:Ni-Ag-codoped ZnO (SNSZO) anode and enhanced the efficiencies. The blue device using SNSZO: Ir(fdbdi)3 exhibit maximum luminance (L) of 42683 cd/m2, current efficiency (ηc) of 43.6 cd/A and power efficiency (ηp) of 45.3 lm W-1 with external quantum efficiency (ηex) of 20.2 % than ITO: Ir(fdbdi)3 based device [L- 35126 cd/m2; ηc - 38.4 cd/A; ηp - 37.3 lm w-1; ηex -15.1 %]. The green device with SNSZO: Ir(mnmpdi)2(acac) show intensified emission at 520 nm and

exhibit higher efficiency; L - 47238 cd/m2, ηc -50.9 cd/A, ηp - 49.3 lm w-1 and ηex - 18.9 % [ITO: Ir(mnmpdi)2(acac): L- 39326 cd/m2; ηc-46.0 cd/A; ηp -39.3 lm w-1; ηex -13.8 %]. The red device (620 nm) with SNSZO: Ir(mnpbi)2(acac) show L - 9058 cd/m2, ηc - 8.3 cd/A, ηp 6.4 lm w-1 and ηex - 12.2 % [ITO: Ir(mnpbi)2(acac): L- 7632 cd/m2; ηc -4.1 cd/A; ηp -6.40 lm w-1; ηex -6.0 %]. The proposed OLEDs with SNSZO anode shows excellent efficiencies than ITO and providing alternate for high-performance OLEDs and other optoelectronic devices.

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Keywords: Glass: Ni-Ag-codoped ZnO interface; anode material; maximum efficiencies;

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surface Plasmon.

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1. Introduction

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Organic light-emitting diodes (OLEDs) are an emerging technology in displays, efficient lighting panels etc., [1-3]. The potential application of TCO (transparent conducting oxide) thin film in OLEDs, transparent thin film transistors, flat panel displays etc., have

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inspired in technological research because of appreciable transparency with high conductivity [4]. In addition to cost-effect, stability and resistant of ITO, TCO work function (wf) must be

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appropriate for display applications [1]. Although the commercial TCO are dominated by

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ITO, ITO usage on flexible devices is limited because of brittleness, high resistance at low temperature etc., [5-8]. To overcome the inflexibility of ITO, alternatives to ITO was developed with good electrical and optical property, such as grapheme [9], carbon nanotubes, metal nanowires [10-12], TCO nanocrystal [13], conducting polymer and metal-mesh TCEs [14-17]. A wide band gap ZnO is a promising material for TCO thin film due to non-toxic and inexpensive in comparison to ITO. However, high wf ~4.0 eV of ZnO leads to high

electron- injection barrier (EIB) between ZnO film and adjacent organic functional layer [18]. Numerous studies show that metal doped ZnO display promising electrical, magnetic and optical properties and adopted as an alternative electron injection layer (EIL) for air-stable OLEDs [19-21]. Silver doped ZnO is a promising EIL for efficient hybrid organic−inorganic OLEDs owing to improved energy level alignment [22]. The surface-plasmon of noble-metal nanostructures enhanced the optoelectronic device efficiencies [23-28]. The OLED efficiency have been increased by reducing hole-injection barrier (HIB) using embedded noble-metal

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nano semiconductors; interface has been stabilized via tuning HIL [29-31] by forming electrical double layer on anode with suitable HIL [32]. The high energy barrier between ITO and EHOMO of organic materials prevents effective hole injection from ITO into organic layer

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and minimized the efficiency The wf of ITO has been increased by using ozone, plasma, wet and self-assembly monolayer coating treatment [33-38]. The Ni-doped ITO enhanced the

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hole injection and enhanced the efficiency and only few reports on RGB PHOLEDs with

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ZnO as anode [39-43]. Therefore, we aimed to enhance the performance of red, green and blue phosphorescent OLEDs using silver NPs sandwiched between Ni-Ag-codoped ZnO NPs (SNSZO) and glass substrate with Ir(mnpbi)2(acac), Ir(mnmpdi)2(acac) and Ir(fdbdi)3 as

2. Experimental

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efficient red, green and blue emitters, respectively.

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2.1. Characterization

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H-1 and C-13 NMR spectra were recorded on Bruker 400 MHz spectrometer using TMS as internal standard and mass spectra was recorded on Agilent LCMS VL SD. The the Uv optical spectra were measured on Lambda 35 PerkinElmer (solution)/ Lambda 35 spectrophotometer with integrated sphere (RSA-PE-20) (film) instrument. The emission spectra was analyzed with Perkin Elmer LS55 fluorescence spectrometer measurements. Oxidation

potentials

of

emissive

materials

were

measured

from

potentiostat

electrochemical analyzer (CHI 630A). The absolute quantum yield of solution and film were measured with fluorescence spectrometer Model-F7100 with integrating sphere. Thermal properties decomposition (Td) and glass transition (Tg) temperature was measured with Perkin Elmer thermal analysis system (10° C min-1; N2 flow rate - 100 ml min-1) and NETZSCH (DSC-204) (10° C min-1; N2 atmosphere), respectively. The composition of Ag NPs and NSZO NPs was confirmed with XPS (X-ray photoelectron spectra: ESCA-3 Mark II spectrometer-VG - Al Kα (1486.6 eV) radiation). SEM (scanning electron microscopic

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images) images and EDS (energy dispersive X-ray spectra) were recorded using JSM-5610 equipped with back electron (BE) detector and FEI Quanta FEG, respectively. The TEM (transmission electron microscopy) image was obtained on Philips TEM with 200 kV

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electron beam and SAED (selected area electron diffraction) pattern was recorded from Philips TEM (CCD camera; 200 kV). The powder XRD was obtained with INEL EQINOX

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1000 POWDER XRD (Cu Kα rays; 1.5406 Å; current - 30 mA; 40 kV).

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2.2. Fabrication of HyLEDs

Newly synthesized iridium (III) complexes namely, Ir(mnpbi)2(acac), Ir(mnmpdi)2 (acac) and Ir(fdbdi)3 are employed as RGB emitters, respectively. The fabrication was made

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by using vacuum deposition (5 x 10-6 torr) over ITO-coated glass with 20 /square resistance. Organic substances deposition was made on ITO with a rate of 1–2 Å s−1 and LiF

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was evaporated thermally over organic surface. The CIE, EL spectra and luminance

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characteristics were recorded with USB-650-VIS-NIR spectrometer (Ocean Opitics, Inc, USA). The thickness was determined with quartz crystal thickness monitor and current density (J)voltage (V) and luminance (L)-voltage (V) were performed using Keithley 2450 source meter. 2.3. Computational Details

The optimized geometry, HOMO and LUMO contour map of Ir(fdbdi)3, Ir(mnmpdi)2 (acac) and Ir(mnpbi)2(acac) were studied with Guassian-09 [44]. 2.4. Synthesis of Ni-Ag-codoped ZnO (NSZO) To zinc acetate (0.1g) solution with AgNO3 and Ni(NO3)2·6H2O in 10 ml PVP K30(0.01 M), 1:1 aqueous ammonia solution was added, under continuous stirring for 30 min to maintain pH 7. The formed white gel was subjected to age overnight, then the precipitate was filtered and washed by using ethanol and water, dried at 80 °C (10 h) and calcinated to

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get grey solid, at 500 °C (6 h; heating rate 10 °C min-1). 2.5. Synthesis of silver nanoparticles (Ag NPs)

The M. elengi fruit pericarp powder was extracted with water and filtered through

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membrane filter paper (0.22 μm cellulose nitrate). The extract was stirred with aqueous 10 ml AgNO3 (0.01 M) at 60 °C for 1 h and formed Ag NPs solution was stored at 5 °C [45].

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2.6. 2-(1-methoxynaphthalen-4-yl)-1-(4-methoxyphenyl)-4,5-diphenyl-1H-imidazole (mnmpdi)

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Mixture of benzil (5 mmol), 4-methoxynaphthaldehyde (5 mmol), 4-methoxyaniline (6 mmol) and ammonium acetate (61 mmol) was refluxed (ethanol: 12 h: N2 stream). From

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the chilled solution, yellow solid of mnmpdi was separated. 1H NMR (400 MHz, CDCl3):  3.75 (s, 6H), 6.80 (d, J=8.8 Hz, 2H), 7.28-7.32 (m, 7H), 7.34-7.45 (m, 8H), 7.78 (d, J=8.6

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Hz, 2H), 8.14 (d, J=8.2 Hz, 1H) (Figure S1). 13C NMR (100 MHz, CDCl3):  55.86, 56.38, 104.85, 115.43, 122.39, 123.03, 128.42, 128.59, 129.66, 135.36, 136.88, 138.98, 149.51,

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160.67 (Figure S1). MS: m/z. 482.11 [M+]. calcd. 482.20 (Figure S7). 2.7. Iridium(III)–bis–2-(1-methoxynaphthalen-4-yl)-1-(4-methoxynaphthyl)-4,5-diphenyl 1H-imidazole(acetylacetonate) [Ir(mnmpdi)2 (acac)] The mnmpdi (2.2 mmol) and iridium (III) chloride trihydrate (1 mmol) in 2-ethoxyethanol: H2O (3:1) was refluxed (N2, 120 ºC), the formed dimer (1 mmol) was refluxed (120 °C; N2) with K2CO3 (2.5 mmol) and acetylacetone (2.2 mmol) in

ethoxyethanol (5 ml) [46]. The green coloured acetylacetonate iridium complex was characterized by spectral techniques 1H NMR (400 MHz, CDCl3):  1.29 (s, 6H), 3.79 (s, 12H), 5.26 (s, 1H), 6.75 (d, J=8.4 Hz, 4H), 6.8-7.09 (m, 6H) 7.11 (d, J=8.4 Hz, 4H), 7.267.38 (m, 14H), 7.66-7.70 (m, 4H) 8.28 (d, J=8.2 Hz, 2H) (Figure S2). 13C NMR (100 MHz, CDCl3):  25.28, 43.32, 55.82, 104.68, 113.69, 114.12, 115.26, 119.82, 122.56, 128.35, 129.62, 130.29, 135.29, 137.51, 138.91, 151.64, 160.84(Figure S2). MS: m/z. 1257.28 [M+]. calcd. 1257.41 (Figure S7).

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2.8. 2-(4-fluorostyryl)-1-(2, 3-dihydrobenzo[b][1,4]dioxin-8-yl)-1H-imidazole (fdbdi)

A mixture of (E)-3-(4-fluorophenyl)acrylaldehyde (1 mmol), glyoxal (1 mmol), 2,3dihydro-1,4- benzodioxane-6-amine (1 mmol) and ammonium acetate (1mmol) in ethanol

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was refluxed (12 h; N2). The mixture was cooled, filtered and column chromatographed (9:1, benzene: ethyl acetate as eluent) (Scheme 1). Yield: 65%.

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H NMR (400 MHz, CDCl3): 

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4.39 (s, 4H), 6.72 (d, J=16.4 Hz, 1H), 6.92 (t, 3H), 6.99 (d, J=8.4 Hz, 1H), 7.29-7.41 (m, 13

C NMR (100 MHz, CDCl3): 64.35, 113.52,

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5H), 7.54 (d, J=16.0 Hz, 1H) (Figure S3).

114.53, 115.13, 116.37, 121.86, 125.48, 128.09, 130.08, 130.19, 133.46,137.25,147.69,

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162.21(Figure S3). MS: m/z. 322.06 [M+] calcd. 322.11 (Figure S7). 2.9. fac-tris[2-(4-fluorostyryl)-1-(2,3-dihydrobenzo[b][1,4]dioxin-8-yl)-1H-imidazolynato -C2, N1]iridium(III) [Ir(fdbdi)3] mixture

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2-(4-fluorostyryl)-1-(2,3-dihydrobenzo[b][1,4]dioxin-8-yl)-1H-

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imidazole (fdbdi) (7.83 mmol), iridium(III) trisacetylacetonate (1.56 mmol) and glycerol (9 ml) was refluxed (240°C; N2; 48 h). After cooling, the reaction mixture was extracted with dichloromethane, after evaporation the separated fac-isomer Ir(fdbdi)3 was purified by haxane washing. 1H NMR (400 MHz, CDCl3):  4.45 (s, 12H), 6.72-6.74 (m, 9H),6.92 (d, J=16.4 Hz, 2H), 7.11 (d, J=8.4 Hz, 4H), 7.21 (d, J=8.2 Hz, 3H), 7.28-7.35 (m, 9H), 7.51 (d, J=8.4 Hz, 3H) (Figure S4).13C NMR (100 MHz, CDCl3): 64.35, 115.42, 121.93, 125.08, 128.02,

130.46, 137.18, 147.69, 162.56(Figure S4). MS: m/z. 1156.27 [M+]; calcd. 1156.12 (Figure S7). 2.10. 2-(1-methoxynaphthalen-4-yl)-1-phenyl-1H-benzo[d]imidazole (mnpbi) A mixture of 4-methoxynaphthaldehyde (2 mmol) and N-phenyl-o-phenylenediamine (1mmol) (2.5 mmol) was refluxed at 80ºC in ethanol. The reaction mixture was extracted and purified by column chromatography (9:1 petroleum ether: ethyl acetate). Yield: 33%. 1H NMR (CDCl3):  3.78 (s, 3H), 6.65 (d, J = 7.8 Hz, 1H), 7.28 (d, J = 8.0 Hz, 2H), 7.32-7.54 13

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(m, 6H), 7.56-7.58 (m, 4H), 7.62-7.71 (m, 1H), 8.25 (d, J = 7.4 Hz, 1H) (Figure S5).

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NMR (100 MHz, CDCl3): 4.85, 11.75, 56.31, 105.23, 122.28, 123.82, 125.48, 126.68, 127.79, 128.26, 131.21, 134.28, 144.35, 156.52(Figure S5). MS: m/z. 350.02 [M+] calcd.

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350.14 (Figure S7).

2.11. Iridium (III)–bis–2- (1-methoxynaphthalen-4-yl) -1-phenyl-1H-benzo [d] imidazole

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(acetylacetonate) [(mnpbi)2Ir(acac)]

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The mnpbi (2.2 mmol) and iridium (III) chloride trihydrate (1 mmol) in 2ethoxyethanol: H2O (3:1) was refluxed (120 ºC: N2 stream). The dimer (1 mmol) was refluxed with potassium carbonate (2.5 mmol) and acetylacetone (2.2 mmol) in 2-

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ethoxyethanol (15 ml). The filtered iridium(III) complex, Ir(mnpbi)2 (acac) was purified by washings and used as emissive layer in fabrication of red OLEDs. Yield: 40%. 1H NMR

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(CDCl3):  1.28-1.34 (m, 6H), 3.78 (s, 6H), 5.05 (s, 1H), 6.59 (d, J = 8.4 Hz, 2H), 6.64 (d, J

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= 7.2 Hz, 8H), 7.29-7.44 (m, 12H), 7.51 (d, J = 8.4 Hz, 2H), 7.71 (d, J = 8.8 Hz, 2H) 8.198.24 (m, 2H) (Figure S6). 13C NMR (100 MHz, CDCl3): 25.96, 43.67, 50.14, 64.35, 104.38, 115.42, 121.93, 122.34, 125.08, 126.59, 128.02, 130.46, 135.62, 137.18, 147.69, 156.56(Figure S6). MS: m/z. 993.21 [M+]; calcd. 993.30 (Figure S7). 3. Results and Discussion 3.1. Characterisation of Ni-Ag-codoped ZnO (NSZO)

XRD pattern of as-synthesized Ni-Ag-codoped ZnO (NSZO) shows three sets of XRD pattern: unmarked peak were indexed to hexagonal primitive ZnO structure corresponding to JCPDS (65-3411), the ∆ labelled peaks are assigned to face centered cubic silver corresponding to JCPDS (89-3722) [47, 48] and * labelled peaks were due to face centered cubic nickel [JCPDS (04-0850)]. After Ag and Ni anchoring, XRD pattern of ZnO was similar which reveal that nickel and silver was not integrated into ZnO lattice because of larger ionic radius of Ag (144 pm) and Ni (125 pm) than Zn2+ (74 pm), therefore, silver and

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nickel metallic phase was formed on ZnO surface. The crystallite size of NSZO was calculated from Scherrer formula as ~11.60 nm and surface area as 90.99 m2 g-1 [49]. The increased NSZO crystallite size might be due to anchoring of Ag and Ni on the surface of

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ZnO. The weak and broad Ag (111) and Ni (311) peak (Figure 1) indicating a small size and well dispersed Ag and Ni on ZnO surface which is in consistent with HRTEM image. The

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lattice spacing 0.20 nm, 0.52 nm and 0.24 nm, respectively corresponds to Ni (111), ZnO

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(001) and Ag (200) planes, respectively [50,51]. The average size of NSZO estimated as 12 nm from TEM image confirm that NSZO are nanoparticles with spherical shape. The rings in

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SAED image fit with hexagonal ZnO and the SAED pattern (Figure 2) reveal that NSZO NPs are polycrystalline in nature with (100), (002), (110), (103), (001) and (211) planes for ZnO

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NPs, respectively [52, 53] and the SAED pattern is well agreement with XRD pattern. The XRD of Ag NPs synthesised from M. elengi fruit pericarp with interplanar

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reflection of 38.12º (1 1 1), 44.30º (2 0 0), 64.44º (2 2 0), 77.40º (3 1 1) and 81.54º (2 2 2) corresponds to face centered cubic crystal (Figure 1: JCPDS. No. 87-0597) [54-57]. The crystal size of Ag NPs is estimated as 18.45 nm and the surface area as 57.21 m2/g. The TEM image shows the spherical nature of Ag NPs (Figure 2). The fringe distance 2.4 Å with spacing between (111) plane corresponds to FCC silver crystal and SAED pattern confirm its crystalline nature (Figure 2). The diffraction circles with bright spots in SAED pattern are

identified to (111), (200), (220), (311) and (222) planes of FCC silver which is in agreement with XRD results. The DLS images show the average size of Ag NPs and NSZO as 18.45 and 11.60 nm, respectively which is in consistent with the size calculated from XRD and TEM. The negative ζ potential of Ag NPs (-18.45 mV) and SSNSZO (-11.60 mV)] indicates the repulsive forces between the particles due to the electrical charge on the surface of Ag NPs and NSZO which in turn increase the stability(Figure S8). The chemical composition and oxidation state of NSZO was analysed by XPS which

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shows the presence of Zn, Ag, Ni, O and C elements (Figure 3). The peak at 284.3 eV (C 1s) is due to residual carbon of the sample and hydrocarbon of XPS instrument. The binding energy of NSZO was different from pristine material reveal that strong interaction between

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Ag, Ni and ZnO NPs. The core level Ag 3d spectrum of NSZO showing two individual peaks at 367.3 eV for Ag 3d5/2 and at 372.3 for Ag 3d3/2. The reduction of Ag ion to metallic silver

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was evidenced by 5 eV splitting between the two peaks. Moreover, the binding energy of Ag

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3d5/2 for NSZO is shifted to lower binding energy compared to metallic Ag (Ag0 -368.5 eV) indicates decrease in electron density of Ag [58, 59]: after deposition of Ag NPs on ZnO surface, electrons at Ag:ZnO interface leads to downward band- bending of ZnO side, leads

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to electron transfer from silver nanodeposit to ZnO side [60]. Since Ag Fermi level is higher than ZnO Fermi level, the Ag work function is smaller than that of ZnO. Hence, electrons

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from Ag easily to transfer to CB ZnO during the Ag-doped ZnO formation and shifting ZnO

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Fermi level to higher simultaneously lowering Ag Fermi level results in an equivalent Fermi level, hence, easy charge-transfer from silver nanodeposit to ZnO side (Figure 4) [61]. The peak at 1020 eV for Zn 2p3/2 and 1042 eV for Zn 2p1/2 reveal that Zn present as Zn+2 in NSZO [58, 59]. The peak at 528.7 and 530.6 eV reveal that O1s profile is asymmetric and assigned to lattice oxygen and surface hydroxyl groups, respectively. The peak at 852.1 eV is attributed to metallic nickel [62]. The composition of Ag NPs was identified by XPS (Figure

S8). The peak at 284.3 eV (C 1s) is due to residual carbon of the sample and hydrocarbon of XPS instrument. Binding energy peaks observed for Ag 3d5/2 and 3d3/2 are at 368.5 and 372.1 eV, respectively and is attributed to metallic silver [63]. The two symmetrical peaks namely, α and β at 528.0 and 531.8 eV reveal that O1s profile is asymmetric. The EDX of Ni-Agcodoped ZnO and Ag NPs confirm the constituent elements (Figure 2). The diffuse reflectance spectra (DRS) of zinc oxide and Ni-Ag-doped ZnO nanomaterials are presented in Figure 4. The absorption band at 472 nm is attributed to the

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surface plasmon resonance of metallic silver nanodeposit on the particles. The reflectance data are reported as F(R) values, obtained by the application of the Kubelka–Munk algorithm [F(R) = (1 – R)2/2R]. Figure 4a shows transformation of DRS of ZnO by co-doping with

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nickel and silver: doping shifts absorption-edge to visible region. From the direct (F(R)hν)2 Vs photon energy] and indirect [(F(R)hν)0.5 Vs photon energy], energy gap (Eg) of Ni-Ag-

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doped ZnO NPs was calculated as 3.03 eV (3.14 eV - ZnO) and 2.98 eV (3.10 eV - ZnO),

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respectively [22]. Figure 4a shows transformation of DRS of ZnO by co-doping with nickel and silver: doping shifts absorption-edge to visible region. From the direct (F(R)hv)2 versus photon energy] and indirect [(F(R)hv)0.5 versus photon energy], the energy gap (Eg) of Ni-Ag-

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doped ZnO NPs was calculated as 3.03 eV (3.14 eV - ZnO) and 2.98 eV (3.10 eV - ZnO), respectively. The interaction of Ag and nickel with ZnO host generates a new energy donor

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level that leads to reduce the optical band gap [22]. The ZnO and Ni-Ag-doped ZnO exhibit

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NBE around 422 nm and deep level emission around 510 nm (Figure 4). The NBE is due to excitonic- recombination whereas DLE is due to recombination of electron (singly occupiedoxygen vacancies) with hole (photogenerated) in VB. Doping leads to reduction of band gap, however, emission energy was unchanged due to quenching of free excitations [64]. Copper doping (potentiometric method [65]), silver doping (electrodeposition [66], chemical synthesis [67] and hydrothermal method [68]) of ZnO exhibit red-shifted emission whereas

nickel and silver doping by sol-gel method does not show red-shifted emission, but emission intensity is decreased due to SPR effect of Ag deposit. 3.2. Characterization of emissive materials Figure 5 represents the ORTEP of 2-(1-methoxynaphthalen-4-yl)-1-(4-methoxy phenyl)-4,5-diphenyl-1H-imidazole (mnmpdi): it is monoclinic crystal and crystallizes in the space group C2/c with cell dimensions, a = 26.5867(10) Å, b = 10.4284(3) Å, c = 22.5353(9) Å. The imidazole unit is planar and form dihedral angles of 79.5º and 68.7º with adjacent

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methoxynaphthyl and p-methoxyphenyl ring [C(5)-N(2)-C(19)-C(4) = 79.5º; N(1)-C(12)-C(17)C(19) = 68.7º], respectively. The dihedral angle C(17)-C(19)-N(1)-C(4) between methoxynaphthyl and p-methoxyphenyl ring is 1.0º (Table S1): mnmpdi based iridium (III) complex Ir(mnmpdi)2

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(acac) is used as green emissive material in electroluminescent process. The broad phosphorescence spectra/quantum yield was measured as 510 nm/0.79 for Ir(mnmpdi)2

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(acac), 615 nm/0.70 for Ir(mnpbi)2 (acac) and 440 nm/0.95 for Ir(fdbdi)3. The optical spectra

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(λabs) of iridium(III) complexes namely, Ir(fdbdi)3, Ir(mnmpdi)2 (acac) and Ir(mnpbi)2(acac) in CH2Cl2 (Figure 6). The absorption of heteroleptic iridium complexes [Ir(mnmpdi)2 (acac)252 nm and Ir(mnpbi)2(acac)- 280 nm) is assigned to π-π* transition ( same energy of free

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ligands mnmpdi and mpbi), the absorption of homoleptic complex Ir(fdbdi)3 at 262 nm is assinged to spin-allowed ligand- centered transition. The other two bands at 363 & 318 nm

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for Ir(mnmpdi)2 (acac), 318 & 402 nm for Ir(mnpbi)2(acac) and 340 & 390 nm for Ir(fdbdi)3

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is due to MLCT transitions (1MLCT←S0 and 3MLCT←S0). The intensity of 3MLCT←S0 is in close with 1MLCT←S0 which reveal that 3MLCT←S0 is symmetry allowed by spin-orbit coupling [69-74]. The three phosphors Ir(fdbdi)3, Ir(mnmpdi)2 (acac) and Ir(mnpbi)2(acac) show strong luminescence in solution and soild. The wave function (Φ) of the triplet state (ΦT) of Ir(fdbdi)3, Ir(mnmpdi)2 (acac) and Ir(mnpbi)2(acac) is a mixture of ΦT (π- π*) and ΦT (MLCT) [75-81], ΦT = a ΦT(π- π*) + b ΦT(MLCT), [a and b are normalized co-efficients, ΦT

(π- π*) and ΦT (MLCT) are wave function of 3(π- π*) and 3(MLCT) excited states, respectively]. When a > b, triplet state is dominated by 3π- π*; when b > a, triplet state is dominated by 3MLCT excited state. The higher contribution of 3MLCT in excited state was confirmed by the broad shape of emission spectra. The Franck-Condon electronic transitions explains the intensity of electronic transition from vibrational level of triplet state (3MLCT or 3

π- π*) to ground state (S0):dominant intensity from υ’0 → υ0 transition of 3MLCT / 3π- π* →

S0 whereas a shoulder peak with lower intensity derived from υ’0 → υ1 electronic transition

correlated to the intensities of vibration from excited 𝑀𝜔𝛥𝑄2 2ℎ

𝑛!

, S - Huang-Rhys factor,

MLCT/ 3π-π* state to ground state

: ω - vibrational frequency, M - reduced mass, ΔQ - displacement of potential

-p

(S0), S =

3

𝑒 −𝑠 𝑆 𝑛

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(Figure S8). The gain in intensity is expressed as, I0→𝑛 =

energy surfaces between the S0 and excited state. The structural distortion upon excitation is

of

vibronic

emission

I0→0

spectra

of

.

iridium

complexes

[Ir(fdbdi)3,

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Absence

I0→1

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explained by the ratio of height of two emission peaks, S =

Ir(mnmpdi)2(acac) and Ir(mnpbi)2(acac)] supports MLCT emission. This is confirmed by phosphorescence life time of Ir(fdbdi)3 (1.6 μs), Ir(mnmpdi)2(acac) (2.9 μs) and

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Ir(mnpbi)2(acac) (2.0 μs)] (Figure 6). The broad emission spectra reveal that the excited triplet state of Ir(fdbdi)3, Ir(mnmpdi)2(acac) and Ir(mnpbi)2(acac) possess dominant

3

MLCT

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character. The radiative/ non-radiative (kr/ (knr) decay rate constants have been calculated

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from,  = ISC {kr/(kr + knr)}, kr = /τ, knr = (1/τ) - (/τ) and τ = (kr + knr)-1 [ - quantum yield; τ - lifetime; ISC - intersystem-crossing yield]. The calculated kr/knr, 7.0/0.9 - Ir(fdbdi)3 3.0/0.9-Ir(mnmpdi)2(acac) and 3.7/1.8 -Ir(mnpbi)2(acac) reveal that radiative emission is predominant over non-radiative transition. The electrochemical stability of the complexes was confirmed by reversible oneelectron oxidation wave (Figure 6). The HOMO energy of Ir(fdbdi)3, Ir(mnmpdi)2(acac) and

Ir(mnpbi)2(acac) was measured to be -5.38, -5.10 and -5.12 eV, respectively [78] [EHOMO (eV) = -(Eox + 4.8)] whereas the LUMO energy was measured as -2.20, -2.30 and -2.78 eV [ELUMO = EHOMO –1239/λonset ] (Table 1). The HOMO orbital of Ir(mnmpdi)2(acac) is localized on iridium, methoxynaphthaldehyde and anizidine fragments whereas the LUMO orbital is populated on anizidine ring. The HOMO of Ir(fdbdi)3 is populated on iridium and imidazole fragments and in LUMO the electron density is localized on

side capping,

dihydrobenzodioxane fragment. The HOMO orbital of Ir(mnpbi)2(acac) is populated on

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iridium and naphthaldehyde fragments and imidazole core whereas the LUMO orbital is partially populated on ancillary ligand. To test their suitability for device fabrication, the thermal characterization (Td) of Ir(fdbdi)3, Ir(mnmpdi)2(acac) and Ir(mnpbi)2(acac) was

-p

analyzed by TGA measurement. The TGA of Ir(fdbdi)3, Ir(mnmpdi)2(acac) and Ir(mnpbi)2(acac) exhibits high decomposition temperature (Td) of 423, 430 and 452 °C,

re

respectively (Figure 6). The higher decomposition of RGB emissive materials supports the

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suitability of these materials for fabrication of OLEDs and show higher efficiency at low turn on voltage.

The optimized geometry of Ir(mnmpdi)2(acac) and Ir(mnpbi)2(acac) exhibit a

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distorted octahedral geometry around iridium atom with two imidazole ligands and one acetylacetonate (acac) ancillary ligand. The imidazole ligands adopt eclipsed configuration

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with two imidazole nitrogen atoms resides at trans-N,N chelate disposition. The

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cyclometalated carbon atoms lies cis around iridium atom. From the optimized geometry (Figure 5) it was shown that Ir-Cav bond length is shorter than Ir-Nav bond length: Ir(fdbdi)3 [Ir-Cav-1.97 Å ˂ Ir-Nav -2.08 Å], Ir(mnmpdi)2(acac) [Ir-Cav-1.98Å ˂ Ir-Nav -2.10Å] and Ir(mnpbi)2(acac) [Ir-Cav-1.99 Å ˂ Ir-Nav -2.12 Å] [79, 80]. The stronger ligand Ir-C bonding interaction weakens Ir-C bonds at their trans disposition, electron rich phenyl rings show

strong influence, shows trans- effect, thus trans-C, C geometry is higher in energy thermodynamically and more labile kinetically called transphobia [81-82]. 3.3. Blue, green and red phosphorescent OLEDs The surface morphology of uniformly coated ITO with 1.0, 2.0 and 3.0 % concentration of SNSZO was analysed through atomic force microscopy (Figure S8). The thickness and RMS of SNSZO layer are 24, 28 and 34 nm and 2.86, 2.56 and 2.31 nm, respectively. The RMS roughness of SNSZO film was much smoother than ITO (4.47 nm) and it was decreased

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slightly as the concentration of SNSZO film increased. As thickness of SNSZO increases, the lifetime also increases [1.50 ns (0%); 2.13 ns (1.0 %); 2.41 ns (2.0 %) and 2.58 ns (3.0 %)] (Figure S8). The 3.0 % wt SNSZO blocks exciton quenching effectively by surface

-p

quenching or non-radiative energy transfer quenching mechanism (Figure S9) and increase of lifetime indicate that quenching of excitons is reduced and the radiative decay of excitons is

re

increased.

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Thin film of Ag NPs embedded NSZO on glass show broad surface plasmon resonance at 432 nm. The emission intensity of glass/ Ag (2 nm)/ NSZO (60 nm)/ NPB (35 nm)/ CBP: iridium complex (25 nm)/ LiF (1 nm)/ Al (100 nm) film is stronger than the

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device, glass/ NPB (40 nm)/ CBP: iridium complex (25 nm)/ LiF (1 nm)/ Al (100 nm) (Figure 7). The SPR of NPs enhanced the emissive material PL intensity and leads to increased

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absorption of incident light by concentrating electromagnetic field at hot spot: overlap of

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SPR of nanoparticles with emission of emissive layer also enhanced the PL intensity (Figures 6 ). Hence, new born metal NPs are appropriate for OLEDs using homoleptic and heteroleptic iridium complexes as emissive layer (λabs -432 nm of SNSZO overlaps with λemi of emissive layer). The relative EL/ PL enhancement compared with control device pointed out that enhanced light -extraction from fabricated devices could be a major reason for the enhanced efficiency of the devices The RGB PHOLEDs were fabricated using Ir(fdbdi)3;

Ir(mnmpdi)2(acac); Ir(mnpbi)2(acac) emitters, respectively (Figure 7).Furthermore, the N,N′dicarbazolyl-4,4′-biphenyl (CBP) was employed as host material (wide energy gap & bipolartransport material) allowing effective e− − h+ recombination in the respective emissive layer. High triplet energy (2.3 eV) of HTM namely, N, N’-bis(naphthyl)-N,N`-diphenyl-1,1’biphenyl-4,4’-diamine (NPB) facilitates high energy exciton confinement [20]. The RMS of silver embedded SNZO is higher than ITO (Figure S8). The heat conductivity of Ag NPs is higher than ITO results large grain on SNSZO surface: the work function (EF) of Ag NPs :

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NSZO interlayer will be stabilized than EF of ITO and increases the conductivity and EF of SNSZO surface leads to enhancing efficiencies (ηc, ηp & ηex) (Table 2). The current density and luminance of the devices increased with embedded Ag NPs at the interface of glass:

-p

SNSZO than reference devices without SNSZO (II, IV and VI). Among the blue devices I (449 nm: Figure 8) and II (465 nm), the blue emitting device with SNSZO: Ir(fdbdi)3 exhibit

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maximum luminance (L) of 42683 cd/m2, current efficiency (ηc) of 43.6 cd/A and power

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efficiency (ηp) of 45.3 lm W-1 and external quantum efficiency (ηex) of 20.2 % than ITO: Ir(fdbdi)3 based device [L -35126 cd/m2; ηc -38.4 cd/A; ηp -37.3 lm w-1; ηex -15.1 %; V-3.2] at driving voltage 3.0 V. Similar observations were found for green and red devices. The green

na

device with emissive layer SSNSZO: Ir(mnmpdi)2(acac) show intensified emission at 520 nm, and higher efficiency; luminance of 47238 cd/m2, ηc -50.9 cd/A, ηp -49.3 lm w-1 and ηex

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-18.9 % at driving voltage of 3.0 V than [ITO: Ir(mnmpdi)2(acac) based device [L- 39326

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cd/m2; ηc-46.0 cd/A; ηp -39.3 lm w-1; ηex -13.8 %; V-3.0]. The red device (620 nm) with SNSZO: Ir(mnpbi)2(acac) show luminance of 9058 cd/m2, ηc - 8.3 cd/A, ηp -6.4 lm w-1 and ηex -12.2 % at driving voltage 3.0 V than ITO: Ir(mnpbi)2(acac)device [L- 7632 cd/m2; ηc -4.1 cd/A; ηp -6.40 lm w-1; ηex -6.0 %; V-3.2 V]. The devices I, III and V show intensified emission than reference devices (II, IV& VI) since HIB is reduced by stabilizing EF by the embedded Ag NPs at glass: NSZO interface. Since the embedded Ag NPs at glass: NSZO

interface promotes holes to disperse across junction and enhanced efficiencies (ηc, ηp & ηex): leakage of holes all the way through emissive layer was decreased and make balanced h + - e recombination and thus the non-productive hole-current was removed. Because of larger area between emissive layer: HTL interface the charge injection is enhanced which results effective electron-hole recombination leads to enhanced device performances. Surfaceplasmon of metal NPS enhanced the emission intensity which can strongly promote the external emission of devices I, III and V. At SNSZO film, Ag NPs effectively excited such

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emission and enhanced the device efficiencies (I, II and V). Efficient electroluminescent performances were harvested from the devices I, III and V using Ag NPs embedded at glass: NSZO interface. In CBP: Ir(ppy)3 (25 nm) based devices

-p

the carrier current decreases sharply since the carrier may undergo deep trapping at Ir(ppy)3 HOMO orbital. However, in CBP: Ir(fdbdi)3 (25 nm); CBP: Ir(mnmpdi)2(acac) (25 nm);

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CBP: Ir(mnpbi)2(acac) (25 nm) based devices, the carrier current increased which may be

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attributed to the effect of direct injection into the dopant HOMO levels and the hopping transport through Ir(fdbdi)3/ Ir(mnmpdi)2(acac)/ Ir(mnpbi)2(acac) and dopant sites (Figure 7). Overall, the efficiencies of the RGB PhOLEDs indicate that the electroluminescent

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efficiencies of devices based on different anodes are comparable and the electroluminescent performances of PHOLEDs with various anodes are displayed in Table 3 [83-89]. The

ur

efficiencies of SNSZO-based OLEDs were not inferior to other previously reported

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efficiencies. This outstanding performance manifests the great potential of SNSZO film as an alternative anode for OLEDs. 4. Conclusion

Enhanced efficiencies have been obtained by incorporating Ag NPs at glass: SNSZO interface to avoid altering the hole mobility due to the coupling of surface plasmonic ability exerted by Ag NPs. Among the blue devices I (449 nm) and II (465 nm), blue device with

SNSZO: Ir(fdbdi)3 exhibit maximum luminance (L) of 42683 cd/m2, current efficiency (ηc) of 43.6 cd/A and power efficiency (ηp) of 45.3 lm W-1 and external quantum efficiency (ηex) of 20.2 % than ITO: Ir(fdbdi)3 based device [L- 35126 cd/m2; ηc - 38.4 cd/A; ηp - 37.3 lm w-1; ηex -15.1 %; V-3.2] at driving voltage 3.0 V. Similar observations were found for green and red devices. The green device with emissive layer SNSZO: Ir(mnmpdi)2(acac) show intensified emission at 520 nm and higher efficiency; luminance of 47238 cd/m2, ηc - 50.9 cd/A, ηp - 49.3 lm w-1

and ηex - 18.9 %

at driving voltage of 3.0 V than ITO:

ro of

Ir(mnmpdi)2(acac) based device [L- 39326 cd/m2; ηc-46.0 cd/A; ηp -39.3 lm w-1; ηex -13.8 %; V-3.0]. The red device (620 nm) with SNSZO: Ir(mnpbi)2(acac) show luminance of 9058 cd/m2, ηc - 8.3 cd/A, ηp -6.4 lm w-1 and ηex - 12.2 % at driving voltage 3.0 V than ITO:

-p

Ir(mnpbi)2(acac)device [L- 7632 cd/m2; ηc -4.1 cd/A; ηp -6.40 lm w-1; ηex -6.0 %; V-3.2 V]. The outcome of present investigation reveals the potential advantage by the use of SNSZO as

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an alternative OLED anode in term of higher efficiency, low voltage and luminance. The

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superior characteristics of tailored silver embedded Ni-Ag-codoped ZnO anode points toward

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the replacement of ITO anodes in future OLED applications.

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Conflict of interest: The authors declare no conflict of interest.

Acknowledgements This research was supported by the DST (Department of Science and Technology -

EMR/2014/000094, F.No. SR/S1/1C-73/2010, F.No. SR/S1/1C-07/2007), DRDO (Defence Research and Development Organization -213/MAT/10-11), CSIR (Council of Scientific and

Industrial Research -No. 01/ (2707)/13EMR-II), UGC (University Grant Commission -6-

Jo

ur

na

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re

-p

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21/2008, F.No. 30-71/2004(SR)) and DST-Nano Mission (SR/NM/NS-1001/2016).

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na

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Figure 1. X-ray diffraction of NSZO (JCPDS: 65-3411) and Ag NPs (JCPDS: 87-0597).

Figure 2. HR-TEM images, [inset: histogram] and SAED pattern of (a) NSZO, (b) Ag NPs

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and EDX spectrum of NSZO (c) Ag NPs (d).

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Figure 3. X-ray photoelectron spectra of NSZO.

Figure 4. DRS spectra of ZnO, NSZO and Ag NPs (a), F(R)hv)2 Vs hv (eV): direct (b), F(R)hv)0.5Vs hv (eV): indirect (c), PL spectra of ZnO, Ag and NSZO (d) and (e)

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Fermi energy level of silver metal and energy level of ZnO.

Figure 5. (a) ORTEP of 2-(1-methoxynaphthalen-4-yl)-1-(4-methoxyphenyl)-4,5-diphenyl1H-imidazole (mnmpdi), (b) Optimized geometry, HOMO and LUMO of

Jo

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Ir(fdbdi)3, Ir(mnpbi)2(acac) and Ir(mnmpdi)2(acac).

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Figure 6. Normalized absorption (a), emission spectra (b), Life time spectra (c), Cyclic voltamogram (d) and TGA graph (e) of Ir(fdbdi)3, Ir(mnpbi)2(acac) and Ir(mnmpdi)2(acac).

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Figure 7. (a) Fabricated device structure, (b) (i) carrier trapping at CBP:Ir(ppy)3 and (ii) carrier hopping through CBP:Ir(fdbdi)3/ Ir(mnpbi)2 (acac) / Ir(mnmpdi)2(acac), (c) energy level diagram of ITO/ NPB / CBP:Ir(fdbdi)3 or CBP: Ir(mnpbi)2(acac) or CBP: Ir(mnmpdi)2(acac) /LiF/ Al and (d) RGB light emission.

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Figure 8. Electroluminescence performances: (a) Luminance versus Voltage; (b) External quantum efficiency versus Current density; (c) Current efficiency versus Current density, (d) Power efficiency versus Current density and (e) EL spectra of Ir(fdbdi)3, Ir(mnpbi)2(acac) and Ir(mnmpdi)2(acac).

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Scheme 1. Synthetic route of Ir(fdbdi)3, Ir(mnpbi)2(acac) and Ir(mnmpdi)2(acac).

Table 1: Optical and thermal properties of Ir(fdbdi)3, Ir(mnmpdi)2 (acac) and Ir(mnpbi)2(acac) Parameters

Ir(fdbdi)3

Ir(mnmpdi)2 (acac) Ir(mnpbi)2 (acac)

262,340,390

252,363,381

280,318,402

λem(nm)

440,446

510,526

615,620

Td (°C)

423

430

452

ϕ

0.95

0.79

0.70

-5.38/-2.20

-5.10/-2.30

-5.12/-2.78

-3.18

2.87

-2.34

1.6

2.9

2.0

7.0

3.0

3.7

0.9

0.7

1.8

HOMO/LUMO(eV) Eg (eV) τ (ns) kr x 108 (s-1) 8

-1

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knr x 10 (s )

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λab(nm)

43

Table 2: Comparative device efficiencies of Ag/ Ni-Ag-ZnO and ITO RGB PHOLEDs. Devices

Von

a

L

ɳxe

b

c

ɳc

e

ɳp

f

Zɳp

g

Zɳex

h

Zɳc

i

ZɳL

CIE

EL

(V)

(cd/m2)

)%(

(cd A-1)

(lm W-1)

(%)

(%)

(%)

(%)

(x, y)

(nm)

Ir(fbdi)3 :ITO

3.2

35126

15.1

38.4

37.3

--

--

--

--

0.16,0.10

465

Ir(fbdi)3 :SNSZOd

3.0

42683

20.2

43.6

45.3

21.5

33.8

13.5

21.4

0.15,0.10

449

Ir(mnmpdi) 2:ITO

3.2

39326

13.8

46.0

39.3

--

--

--

--

0.12,0.33

530

Ir(mnmpdi)2 :SNSZOd

3.0

47238

18.9

50.9

49.3

20.1

37.0

10.7

25.4

0.12,0.32

520

Ir(mpbi)2acac :ITO

3.2

7632

6.0

4.1

3.9

--

--

--

--

0.68,0.32

630

Ir(mpbi)2acac:SNSZOd

3.0

9058

12.1

8.3

6.4

18.7

101.7

102.4

64.1

0.68,0.30

620

L – Brightness; bηex – maximum external quantum efficiency; cηc - Luminous efficiency; eηp -Power efficiency; fZηp = [ηpd- ηp /ηp] x100, ηpd – maximum power efficiency with NPs; ηp – maximum power efficiency without NPs; gZηex = [ηexd- ηex /ηex] x100, ηexd – maximum external quantum efficiency with NPs; ηex – maximum external quantum efficiency without NPs; , ηcd – maximum luminous efficiency with NPs; ηc – maximum luminous efficiency without NPs: iZL = ]Ld-L/L] x100, hZηc = [ηcd- ηc/ηc] x100, Ld – maximum brightness with NPs; L – maximum brightness without NPs,

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a

44

Emissive materials /color

Zr:ZnO

Alq3/green

0.87

-

79

In:ZnO

Fac-Ir(ppy)3/green

13.2

30.7

80

13.7

32.7

80

8.5

14.1

80

12.4

30.1

80

15.2

31.6

81

16.6

33.1

81

16.3

33.7

81

FIrpic/blue

8.2

-

82

FIrpic/blue

19.0

-

82

Ir(piq)2acac/red

9.1

-

83

Fac-Ir(ppy)3/green

14.5

-

83

Ir(bpima)2 (pic)/blue

19.2

-

84

Ir(fpi)3/green

15.6

-

84

Ir(fni)3/blue

19.4

-

85

Ir(tfpdni)2 (pic)/green

17.5

-

85

Ir(bbt)2 (acac)/red

9.3

-

85

20.2

45.3

This work

Ir(mnmpdi)2 (acac)/green

18.9

49.3

This work

Ir(mpbi)2 (acac)/red

12.1

6.4

This work

FIrpic/blue

NPs

Ga-Ti-ZnO

Ag/Ga-Ti-ZnO

Ag/Ga-Zr-TiO2

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Ag/Ni-Ag-ZnO Ir(fdbdi)3/blue

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Ga:ZnO

EQE (%) PE(lm/W) Reference

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Anode

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Table 3: External quantum efficiency of OLEDs with various anodes.