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Reflectivity-Amplitude Modulation of A Radar Absorber Based on Active Frequency Selective Surface
Available online at www.sciencedirect.com
ScienceDirect ScienceDirect
Procedia Computer Science 00 (2019) 000–000
Available online at www.sciencedirect.com Procedia Computer Science 00 (2019) 000–000
www.elsevier.com/locate/procedia
ScienceDirect
www.elsevier.com/locate/procedia
Procedia Computer Science 147 (2019) 638–642
2018 International Conference on Identification, Information and Knowledge in Things, IIKIInformation 2018 2018 International Conference on Identification, and Knowledge in Things, IIKI 2018 Reflectivity-Amplitude Modulation of A Radar Absorber Based on Active Reflectivity-Amplitude Modulation of A Radar Absorber Based on Active Selective Surface Selective Surface 1 1
the Internet of the Internet of Frequency Frequency
Kainan Qi1,2* , Haochuan Deng 2 , Hao Wan 2 , Yan Wang 2 , Yongfeng Wang 2 Kainan Qi1,2* , Haochuan Deng 2 , Hao Wan 2 , Yan Wang 2 , Yongfeng Wang 2
College of Information Engineering, Communication University of China ，Box No. 207,P.O. Box142,Beijing, 100854 ，P.R. China 2 Science and Technology on Electromagnetic Scattering Laboratory ，Box No.No. 207,P.O. Box142,Beijing, 100854 ，P.R. China College of Information Engineering, Communication University of China ，Box 207,P.O. Box142,Beijing, 100854 ，P.R. China 2
Science and Technology on Electromagnetic Scattering Laboratory ，Box No. 207,P.O. Box142,Beijing, 100854 ，P.R. China
Abstract Abstract
A novel microwave absorber is presented in this paper. The absorber is a single layer structure based on the topology of amicrowave Salisbury absorber screen, but in which the conventional replaced an active frequency A novel is presented in this paper. Theresistive absorberlayer is a issingle layerby structure based on the selective (AFSS) screen, controlled d iodes. The reflect ivity -amp litude of replaced the tunable wavefrequency absorber topology surface of a Salisbury but by in PIN which the conventional resistive layer is by micro an active can be controlling by adjusting the current d iod es.reflect Experimental results prove the absorber working selective surface (AFSS) controlled by PINin dPIN iodes. The ivity -amp litudeare of presented the tunableand micro wave mechanis m of the new absorber,the which show ity amplitude can are be modulated fro mprove -5dBthe to -42d B at can be controlling by adjusting current in that PIN the d iodreflectiv es. Experimental results presented and working 11.5GHz. mechanis m of the new absorber, which show that the reflectiv ity amplitude can be modulated fro m -5dB to -42d B at 11.5GHz.
© 2019 The Author(s). Published by Elsevier B.V. © 2019 2019 The Authors. bybyElsevier B.V. This is an open accessPublished article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by -nc-nd/4.0/) © The Author(s). Published Elsevier B.V. This is an open access article underofthethe CCscientific BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility committee of the 2018 International Conference on Identification, This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by -nc-nd/4.0/) Peer-review under responsibilityinof the the Internet scientific of committee of the 2018 International Conference on Identification, Information and Information and Knowledge Things Peer-review responsibility Knowledge inunder the Internet of Things.of the scientific committee of the 2018 International Conference on Identification,
Information and Knowledge in the Internet of Things Keywords: AFSS, absorber, amplitude-modulation Keywords: AFSS, absorber, amplitude-modulation
1. Introduction 1. Introduction Stealth technology is one of the most important military technologies concerned by all the nations, whose essence is reducing radar [1] important (RCS) of military targets. technologies Radar absorbing materials RAM) is the primary Stealth technology is cross one ofsection the most concerned by (all the nations, whose method ofis RCS reduction. essence reducing radar cross section [1] (RCS) of targets. Radar absorbing materials ( RAM) is the primary method of RCS reduction. * Corresponding author. Tel.: 010-88527028; fax: 010-88527207. E-mail address:[email protected] * Corresponding author. Tel.: 010-88527028; fax: 010-88527207. E-mail address:[email protected] 1877-0509 © 2019 T he Author(s). Published by Elsevier B.V. T his is an open access underPublished the CC BY-NC-ND 1877-0509 © 2019 T hearticle Author(s). by Elsevier license B.V. (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the committee of the(https://creativecommons.org/licenses/by-nc-nd/4.0/) 2018 International Conference on Identification, Information and T his is an open access article under thescientific CC BY-NC-ND license Knowledge inunder the Internet of Things Peer-review responsibility of the scientific committee of the 2018 International Conference on Identification, Information and Knowledge in the Internet of Things
1877-0509 © 2019 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the 2018 International Conference on Identification, Information and Knowledge in the Internet of Things. 10.1016/j.procs.2019.01.191
2
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
639
In the 1930s, there had been RAM that was used in the antenna field. A fter 1950s, there had been Salisbury screen [2], Dallenbach and Jaumann absorber [3] with fast development of radar technology. These c onventional absorbing structures have been widely used in the fields of electromagnetic interference, electro magnetic compatibility and radar cross section control techniques. The Salisbury screen consists of a single resistive sheet mounted at a distance of λ/4 above a metal-backed plane. The Salisbury screen is a resonant radar absorbing structure, whose surface impedance matches well with free space at certain frequency. The tunable microwave absorber [4, 5] could control its reflectiv ity response according to threatened frequency, in order to obtain the optimal absorbing capability at its threatened frequency. T. K. Chang [6] presented that the active frequency selective surface (FSS) was made by placing PIN diodes on the FSS, and the response of the active FSS could be controlled by adjusting the bias voltage or current in PIN d iodes. B. Chambers [7] designed a singlelayer tunable microwave absorber using an active FSS. Measured results proved that this absorber did well in 913GHz, and the reflective response could be adjusted. For instance, Zhao et al. [8] designed a tunable metamaterial absorber using varactor diodes, which has a bandwidth of 1.5 GHz with the absorption rate more than 90% when the bias voltage changes from 0 to −19V. In this paper, we present an AFSS absorber using PIN diodes embedded between adjacent resonant units; the reflective amp litude can be tuned continuously by adjusting the current of diodes. In this paper, a sample of tunable micro wave absorber was designed and manufactured. This work is important for target camouflage and other microwave applications in the future. 2. Structure and preformances Fig. 1 shows the structure of the proposed AFSS absorber. The top layer is the AFSS loaded with PIN d iodes, which is printed on a FR4 dielectric substrate, and the thickness of the copper is 18μm. The second layer is a FR4 dielectric substrate, which has a relative permittiv ity of 2.2 and a thickness of 1.5mm. The bottom layer is a metal backboard.
Fig. 1. Construction of the absorber
Fig. 2 shows a part of the AFSS array. It shows the unit cell pattern, which is based on a square ring. The detail of an element is listed that the period is 9.8 mm, the gap between two elements is 2.8 mm, and the width of slot is 0.5 mm.
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
640
3
Fig. 2. T he geometry of AFSS array
The Full-wave simulat ion is given by the HFSS. The electro magnetic wave is perpendicularly incident to the AFSS absorber. Fig. 3 shows the simulated results of the AFSS absorber, with various R, which is the resistance of the lu mped resistor. The reflective frequency varies fro m 9GHz to 11.5GHz when R increases fro m 50oh m to 200oh m, and the reflectivity-amp litude varies fro m -5dB to -34dB at 11.5GHz when R increases fro m 200oh m to 2000ohm. 0 -5
reflectivity/dB
-10
50ohm 100ohm 200ohm 300ohm 350ohm 400ohm 500ohm 1000ohm 2000ohm
-15 -20 -25 -30 -35
8
10
12
14
16
18
f/GHz Fig. 3. T he simulated results of the proposed absorber
3. Experimental results Based on the design in Fig.1, an AFSS is manufactured on a 1.5mm thick dielectric board, the permittiv ity of which is 2.2. The board (Fig.4) measures 200mm by 200mm and contains 400 elements which are loaded with commercially available surface-mount PIN diodes (Bar5002v).
4
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
641
Fig.4.Manufacture of the AFSS board
A tunable microwave absorber is constructed by mounting the AFSS above a conducting back-plane ,and the circuit surface of the board is lay upwards . The reflectiv ity of the absorber was measured over the frequency range of 8–18GHz, the measured data is plot in Fig. 5. In Fig. 5, the measured curve is similar with the simulated curve. The reflect ivity -amp litude varies fro m 5dB to -42d B at 11.5GHz when the single current increases fro m 0mA to 0.044mA , which varies fro m -42d B to 10d B when the single current increases from 0.044mA to 0.25mA, and the reflective frequency changes fro m 11.5GHz to 9GHz when current increases from 0.25mA to 1mA. 0 -5
reflectivity/dB
-10
0mA 0.005mA 0.025mA 0.038mA 0.044mA 0.05mA 0.075mA 0.25mA 0.5mA 1mA
-15 -20 -25 -30 -35 -40 -45
8
10
12
f/GHz
14
16
18
Fig.5.Measured data of the HIS absorber
4. Conclusions An tunable absorber is presented, which contains an AFSS layer loading PIN diodes onto the FSS array. Measured data show that the reflectivity-amp litude of the absorber cover a range of -5dB~-42dB at 11.5GHz by adjusting the current . The total thickness of this absorber, 1.5mm, is only λ/17 o f the resonant frequency. The
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Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
5
design of AFSS absorber provides an approach for target camouflage at microwave frequency.
References [1] Knott E. F., Radar Cross Section, 2Rev. ed., Artech House: Norwood, 1993. [2] Ronald L., “ Reflection Properties of the Salisbury Screen,” IEEE T rans. A. P., 36(10): 1443~1454, 1988. [3] T oit L. J., “The design of Jaumann absorbers,” IEEE T rans. A. P., 36(6):17~25, 1994. [4] K. N. Qi, et al., “Analysis and optimization of active tunable absorber,” Journal of Beijing University of Aeronautics and Astronautics 41(10) :1853~1858, 2015 . [5] C. Mias and J. H. Yap: “A varactor-tunable high impedance surface with a resistive-lumped- element biasing grid,” IEEE Trans. Antennas Propag. 55(7) ,1955~1962 ,2007. [6]T . K. Chang, et al., “An Active Square Loop Frequency Selective Surface, ”. IEEE Transaction Microwave and Guided Wave Letters,3(10): 387~388, 1993. [7] B. Chambers and A. T enant, “A Single-Layer T unable Microwave Absorber Using an Active FSS,” IEEE Trans. Microwave and Wireless Components Letters, 14(1):46~47, 2004. [8] J. Zhao, et al., “ A tunable metamaterial absorber using varactor diodes,” New J. Phys. 15 (2013) 043049.
ScienceDirect ScienceDirect
Procedia Computer Science 00 (2019) 000–000
Available online at www.sciencedirect.com Procedia Computer Science 00 (2019) 000–000
www.elsevier.com/locate/procedia
ScienceDirect
www.elsevier.com/locate/procedia
Procedia Computer Science 147 (2019) 638–642
2018 International Conference on Identification, Information and Knowledge in Things, IIKIInformation 2018 2018 International Conference on Identification, and Knowledge in Things, IIKI 2018 Reflectivity-Amplitude Modulation of A Radar Absorber Based on Active Reflectivity-Amplitude Modulation of A Radar Absorber Based on Active Selective Surface Selective Surface 1 1
the Internet of the Internet of Frequency Frequency
Kainan Qi1,2* , Haochuan Deng 2 , Hao Wan 2 , Yan Wang 2 , Yongfeng Wang 2 Kainan Qi1,2* , Haochuan Deng 2 , Hao Wan 2 , Yan Wang 2 , Yongfeng Wang 2
College of Information Engineering, Communication University of China ，Box No. 207,P.O. Box142,Beijing, 100854 ，P.R. China 2 Science and Technology on Electromagnetic Scattering Laboratory ，Box No.No. 207,P.O. Box142,Beijing, 100854 ，P.R. China College of Information Engineering, Communication University of China ，Box 207,P.O. Box142,Beijing, 100854 ，P.R. China 2
Science and Technology on Electromagnetic Scattering Laboratory ，Box No. 207,P.O. Box142,Beijing, 100854 ，P.R. China
Abstract Abstract
A novel microwave absorber is presented in this paper. The absorber is a single layer structure based on the topology of amicrowave Salisbury absorber screen, but in which the conventional replaced an active frequency A novel is presented in this paper. Theresistive absorberlayer is a issingle layerby structure based on the selective (AFSS) screen, controlled d iodes. The reflect ivity -amp litude of replaced the tunable wavefrequency absorber topology surface of a Salisbury but by in PIN which the conventional resistive layer is by micro an active can be controlling by adjusting the current d iod es.reflect Experimental results prove the absorber working selective surface (AFSS) controlled by PINin dPIN iodes. The ivity -amp litudeare of presented the tunableand micro wave mechanis m of the new absorber,the which show ity amplitude can are be modulated fro mprove -5dBthe to -42d B at can be controlling by adjusting current in that PIN the d iodreflectiv es. Experimental results presented and working 11.5GHz. mechanis m of the new absorber, which show that the reflectiv ity amplitude can be modulated fro m -5dB to -42d B at 11.5GHz.
© 2019 The Author(s). Published by Elsevier B.V. © 2019 2019 The Authors. bybyElsevier B.V. This is an open accessPublished article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by -nc-nd/4.0/) © The Author(s). Published Elsevier B.V. This is an open access article underofthethe CCscientific BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility committee of the 2018 International Conference on Identification, This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by -nc-nd/4.0/) Peer-review under responsibilityinof the the Internet scientific of committee of the 2018 International Conference on Identification, Information and Information and Knowledge Things Peer-review responsibility Knowledge inunder the Internet of Things.of the scientific committee of the 2018 International Conference on Identification,
Information and Knowledge in the Internet of Things Keywords: AFSS, absorber, amplitude-modulation Keywords: AFSS, absorber, amplitude-modulation
1. Introduction 1. Introduction Stealth technology is one of the most important military technologies concerned by all the nations, whose essence is reducing radar [1] important (RCS) of military targets. technologies Radar absorbing materials RAM) is the primary Stealth technology is cross one ofsection the most concerned by (all the nations, whose method ofis RCS reduction. essence reducing radar cross section [1] (RCS) of targets. Radar absorbing materials ( RAM) is the primary method of RCS reduction. * Corresponding author. Tel.: 010-88527028; fax: 010-88527207. E-mail address:[email protected] * Corresponding author. Tel.: 010-88527028; fax: 010-88527207. E-mail address:[email protected] 1877-0509 © 2019 T he Author(s). Published by Elsevier B.V. T his is an open access underPublished the CC BY-NC-ND 1877-0509 © 2019 T hearticle Author(s). by Elsevier license B.V. (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the committee of the(https://creativecommons.org/licenses/by-nc-nd/4.0/) 2018 International Conference on Identification, Information and T his is an open access article under thescientific CC BY-NC-ND license Knowledge inunder the Internet of Things Peer-review responsibility of the scientific committee of the 2018 International Conference on Identification, Information and Knowledge in the Internet of Things
1877-0509 © 2019 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the 2018 International Conference on Identification, Information and Knowledge in the Internet of Things. 10.1016/j.procs.2019.01.191
2
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
639
In the 1930s, there had been RAM that was used in the antenna field. A fter 1950s, there had been Salisbury screen [2], Dallenbach and Jaumann absorber [3] with fast development of radar technology. These c onventional absorbing structures have been widely used in the fields of electromagnetic interference, electro magnetic compatibility and radar cross section control techniques. The Salisbury screen consists of a single resistive sheet mounted at a distance of λ/4 above a metal-backed plane. The Salisbury screen is a resonant radar absorbing structure, whose surface impedance matches well with free space at certain frequency. The tunable microwave absorber [4, 5] could control its reflectiv ity response according to threatened frequency, in order to obtain the optimal absorbing capability at its threatened frequency. T. K. Chang [6] presented that the active frequency selective surface (FSS) was made by placing PIN diodes on the FSS, and the response of the active FSS could be controlled by adjusting the bias voltage or current in PIN d iodes. B. Chambers [7] designed a singlelayer tunable microwave absorber using an active FSS. Measured results proved that this absorber did well in 913GHz, and the reflective response could be adjusted. For instance, Zhao et al. [8] designed a tunable metamaterial absorber using varactor diodes, which has a bandwidth of 1.5 GHz with the absorption rate more than 90% when the bias voltage changes from 0 to −19V. In this paper, we present an AFSS absorber using PIN diodes embedded between adjacent resonant units; the reflective amp litude can be tuned continuously by adjusting the current of diodes. In this paper, a sample of tunable micro wave absorber was designed and manufactured. This work is important for target camouflage and other microwave applications in the future. 2. Structure and preformances Fig. 1 shows the structure of the proposed AFSS absorber. The top layer is the AFSS loaded with PIN d iodes, which is printed on a FR4 dielectric substrate, and the thickness of the copper is 18μm. The second layer is a FR4 dielectric substrate, which has a relative permittiv ity of 2.2 and a thickness of 1.5mm. The bottom layer is a metal backboard.
Fig. 1. Construction of the absorber
Fig. 2 shows a part of the AFSS array. It shows the unit cell pattern, which is based on a square ring. The detail of an element is listed that the period is 9.8 mm, the gap between two elements is 2.8 mm, and the width of slot is 0.5 mm.
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
640
3
Fig. 2. T he geometry of AFSS array
The Full-wave simulat ion is given by the HFSS. The electro magnetic wave is perpendicularly incident to the AFSS absorber. Fig. 3 shows the simulated results of the AFSS absorber, with various R, which is the resistance of the lu mped resistor. The reflective frequency varies fro m 9GHz to 11.5GHz when R increases fro m 50oh m to 200oh m, and the reflectivity-amp litude varies fro m -5dB to -34dB at 11.5GHz when R increases fro m 200oh m to 2000ohm. 0 -5
reflectivity/dB
-10
50ohm 100ohm 200ohm 300ohm 350ohm 400ohm 500ohm 1000ohm 2000ohm
-15 -20 -25 -30 -35
8
10
12
14
16
18
f/GHz Fig. 3. T he simulated results of the proposed absorber
3. Experimental results Based on the design in Fig.1, an AFSS is manufactured on a 1.5mm thick dielectric board, the permittiv ity of which is 2.2. The board (Fig.4) measures 200mm by 200mm and contains 400 elements which are loaded with commercially available surface-mount PIN diodes (Bar5002v).
4
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
641
Fig.4.Manufacture of the AFSS board
A tunable microwave absorber is constructed by mounting the AFSS above a conducting back-plane ,and the circuit surface of the board is lay upwards . The reflectiv ity of the absorber was measured over the frequency range of 8–18GHz, the measured data is plot in Fig. 5. In Fig. 5, the measured curve is similar with the simulated curve. The reflect ivity -amp litude varies fro m 5dB to -42d B at 11.5GHz when the single current increases fro m 0mA to 0.044mA , which varies fro m -42d B to 10d B when the single current increases from 0.044mA to 0.25mA, and the reflective frequency changes fro m 11.5GHz to 9GHz when current increases from 0.25mA to 1mA. 0 -5
reflectivity/dB
-10
0mA 0.005mA 0.025mA 0.038mA 0.044mA 0.05mA 0.075mA 0.25mA 0.5mA 1mA
-15 -20 -25 -30 -35 -40 -45
8
10
12
f/GHz
14
16
18
Fig.5.Measured data of the HIS absorber
4. Conclusions An tunable absorber is presented, which contains an AFSS layer loading PIN diodes onto the FSS array. Measured data show that the reflectivity-amp litude of the absorber cover a range of -5dB~-42dB at 11.5GHz by adjusting the current . The total thickness of this absorber, 1.5mm, is only λ/17 o f the resonant frequency. The
642
Kainan Qi et al. / Procedia Computer Science 147 (2019) 638–642 Kainan Qi/ Procedia Computer Science 00 (2019) 000–000
5
design of AFSS absorber provides an approach for target camouflage at microwave frequency.
References [1] Knott E. F., Radar Cross Section, 2Rev. ed., Artech House: Norwood, 1993. [2] Ronald L., “ Reflection Properties of the Salisbury Screen,” IEEE T rans. A. P., 36(10): 1443~1454, 1988. [3] T oit L. J., “The design of Jaumann absorbers,” IEEE T rans. A. P., 36(6):17~25, 1994. [4] K. N. Qi, et al., “Analysis and optimization of active tunable absorber,” Journal of Beijing University of Aeronautics and Astronautics 41(10) :1853~1858, 2015 . [5] C. Mias and J. H. Yap: “A varactor-tunable high impedance surface with a resistive-lumped- element biasing grid,” IEEE Trans. Antennas Propag. 55(7) ,1955~1962 ,2007. [6]T . K. Chang, et al., “An Active Square Loop Frequency Selective Surface, ”. IEEE Transaction Microwave and Guided Wave Letters,3(10): 387~388, 1993. [7] B. Chambers and A. T enant, “A Single-Layer T unable Microwave Absorber Using an Active FSS,” IEEE Trans. Microwave and Wireless Components Letters, 14(1):46~47, 2004. [8] J. Zhao, et al., “ A tunable metamaterial absorber using varactor diodes,” New J. Phys. 15 (2013) 043049.