Regeneration of ammoniacal copper etchant

Regeneration of ammoniacal copper etchant

poles, and wherein the magnetic field means generates a plasma holding field. Method for Controlling a Reactive Sputtering Process U.S. Patent 5,556,...

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poles, and wherein the magnetic field means generates a plasma holding field.

Method for Controlling a Reactive Sputtering Process U.S. Patent 5,556,520. Sept. I?, 1996 R. L&z, assignor to Leybold AG, Hanau, Germany

A method for controlling a reactive sputtering process comprising keeping power constant, thereby providing a physical characteristic curve of discharge voltage versus reactive gas flow having an overall slope and a working portion on which a desired working voltage is located and increasing the reactive gas flow to achieve the desired working voltage.

to an operating temperature between 40 and 90°C; contacting with a quantity of aluminum metal; mixing spent ammoniacal etchant containing dissolved copper with the fresh etchant at a controlled rate while monitoring the temperature of the resulting mixture; controlling the temperature to maintain the mixture between 40 and 90°C; maintaining the pH above 8.0 by additions of ammonia; separating substantially copper-free ammoniacal etchant solution from the metallic copper and aluminum hydroxide precipitates formed by reaction of aluminum metal and dissolved copper in the mixture; and reconstituting fresh ammoniacal etchant by additions to reconstitute the pH, specific gravity, and chemical composition of the separated etchant solution.

Regeneration of Ammoniacal Copper Etchant

Metal-Plated

U.S. Patenf 5,556,553. Sept. 17, 1996 G.A. Krulik et al, assignors to Applied Ekctroless Concepts Inc., San Clemente, Calif.

U.S. Patent 5,556,702. Sept. 17, 1996 M. Kabumafa ef al, assignors to Yazaki Corp., Tokyo

A process for the purification of spent ammoniacal alkaline copper etchant containing more than 100 g/L copper in solution, which comprises bringing fresh etchant containing less than 100 g/L copper

A metal-plated carbon material, comprising a carbon material of an intercalation compound including at least two graphite layers and at least one metal chloride compound between the graphite layers, and a

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Forming Integrated Electroplating

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U.S. Patent 5,556,614. Sept. 17, 1996 7: lnoue and M. Yoshimura, assignors to KK Toshiba, Kawasaki, Japan

A method for forming wiring of an integrated circuit, comprising coating with an under-metal layer; coating the under-metal layer with a mask; a first etching step of removing the under-metal layer, which is not coated by the mask; an electroplating step; a step of removing the mask; and a second etching step of removing all of the remaining under-metal layer; wherein the plating metal layer is formed of substantially the same material as that of the exposed upper portions or by a material that can be physically contacted with the exposed upper portions and, wherein the electroplating step comprises contacting a needle with the mask-coated under-metal layer, and supplying DC current to the exposed upper portions in a plating solution through the needles and the under metal layer, thereby permitting a plating metal layer to be deposited on the exposed upper portion.

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