SEM in crystal growth

SEM in crystal growth

~t~a~cre~cop~ 2%(1987) 229-254 worth-Roland. An wrdam 229 Abstracts of papers presented at the 21st Scientific THE ISRAEL SOCIETY OF ELECTRON ...

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~t~a~cre~cop~ 2%(1987) 229-254 worth-Roland. An wrdam

229

Abstracts

of papers

presented

at the

21st Scientific THE ISRAEL SOCIETY

OF ELECTRON

U-12 Technion-Israel

Meeting

of MICROSCOPY

May 1987

Institute of Technology Haifa

?I

l

Kessel

Dept. of >:embrane and Ultrastructure Research T,",cHebrew Unix-ersity Hadassah ?!edicaf School P.O,B. 1172 Jerusalem, Israel

Alw-acts o.f l%e Israel Society of Electron Microscopy

SEM IN CRYSTAL GROWTH

231

cross-section Process monitoring (e.g. metal step coverage) D. Failure analysis E. Special applications such as FBIC, EDX and electron-beam probing. This presentation is a short slide show of some SEM micrographs of the above SEM application of MOS devices. c.

I. Minkoff Dept.

Mat.

Eng.,

Technion

The understanding of mechanisms of growth of crystals and their association with morphology presents both theoretical and experimental problems. Some typical examples are the growth forms of ice and the spherulitic growth of polymers. Interesting advances have been made more recently in theory using fractal concepts in growth while experimental observations use different electron microscopy techniques ir,combination with X-ray diffraction. The present paper summarises SEM observations made during a period of several years. The experiments described were on the behaviour of steps on faceted crystals in growth. The crystals der:r.ribed here are graphite and silicon. In combination with X-ray diffraction methods, an initial understanding was obtained of shape changes in faceted crystals. The stages can be followed for unstable morphologies. The observations should have general applicability to a range of materials. APPLICATIONS OF SCANNING ELECTRON MICROSCOPY IN VLSI INTEGRATED CIRCUITS E. Kinsbron National Semiconductor P. 0, Box 6.29, Migdal Israel

(I.C.) Ltd., Haemek 10556,

Advanced lithography and etching techniques allow the fabrication of VLSI circuits with submicron features. This device miniaturization expedited the heavy use of scanning electron microscopes (SEM) in today's IC technology. Superior depth of field, high magnification and resolution, greater working distance, ability ticaccormodate tilt angles and many other add-on analytical tools promoted the SEM in many tests to be the only suitable instr'umentfor IC analysis. High-intensity filaments, low accelerating voltages and special decorating procedures increased the use of the SEM in the following fields: A. Critical dimensions and registration calibration and measurements B. Process development (includinc?

THE USE OF THE SCANNING ELECTRON MICROSCOPE IN THE BIOLOGICAL MINERALIZATION: A STUDY OF THE SEA URCHIN Stephen Weiner, Amir Berman and Lea Addadi* Isotope and *Structural Chemistry Weizmann Institute of Departments, Science, Rehovot, Israel

Sea urchins form some of the most unusual mineralized structures known in the biological world. X-ray diffraction of their test plates, spines and teeth reveal single crystal calcite diffraction patterns. Examination of these skeletal elements in the SEM shows that they have an extremely complex ultrastructure. Their natural surfaces display a glassy conchoidal fracture rather than the normal smooth (104) cleavage of synthetic calcite. To better understand the basic process of sea urchin biomineralization, we grew calcite crystals in vitro in the presence of acidic glycoproteins extracted and purified from the tests. SEM examination showed that they had developed new crystal faces, implying that the proteins had interacted specifically with those faces and not with others, The crystals cleaved with conchoidal fracture like their biological counterparts and unlike synthetic controls. Fluorescence microscopy Of crystals grown in the presence of labelled proteins showed that the proteins had somehow entered into the crysbul

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