- Email: [email protected]
Semi-empirical APW calculation of the band structure of silicon
914
Worm Abstracts on Mi~ooketronics and Reliability
SXLXCE and. J. DBSPU~OLS.Solid-St. Electron,23, 243 (t980). MNS capacitors were subnmtted to a series of alternating voltage pulse, and meascrc~acats were. l~n£ormcd at different stages of this cycling, The interface state parameters at the Sj-Si3N4 interface were. evaluat~l using the conductance method; the surface potential ~ was obtained from a measurement of the high-frequency capacitance. Experimental results are explained by the formation, during cycling, of new fast surface states located at the Si-Si3N, interface.
Avala~he i n , tim in MINOS gate controlled diodes. PHILLIP Rtrrr~. S o l i d St. Electron. 23, 441 (1980). Avalanche injection into a dielectric due to hot, electrons produced by breakdown in a depletion region is investigated in a simplified manner. A closed form solution for the field distribution at breakdown is presented which provides an insight into the injection properties under varying physical conditions, The mode! presented describes the junction breakdown characteristics of a Metal-Nitride-Oxide-Silicon gated diode. This device is capable of being written and erased into various charge states thus varying the breakdown properties of ,the junction. This is anaiysed in detail where the major parameters are considered to be (i) junction "walk-out~ distance (ii) depletion width (iii) applied junction bias (iv)applied gate bias. An influence of the rate of epitaxinl growth on physical of g ~ l ~ l l ~ . DANUTADOBO~Z and JBRZY PlrrnYK. Electron Technol, 12, (2) 103 (1979). The present paper discusses the relation between the rate of epitaxial growth and both electrical and luminescence properties of vapour phase epitaxial GaN layers grown on (0001) ~A1203 substrates` The growth rate has been varied by n~eans of HCI flow control and/or by changing the type of carrier gas. In the latter case helium was found prominent for high growth rate to be~ preserved: Cathodoluminescence studies proved unintentional doping to be dependent on purity of the carrier gas a n d t o be the function of GaN deposition rate. The eff~ts ofpl~lphOrm diffmion ¢ooli~ ~ t e on i2L gain. l ~ I t ~ q D L. Mo~t~, Solid St. Electron, 23, 457 (t980). It has been found that the current gain of an I2L cell can be seriously degraded ff~ the deep collector (PhOsphorus) diffusion is not slow cooled. A correlation between improper cooling rate and the generation of a severe edge dislocation network is established. This network, is shown to result in leaky emitter-base and collector-base junctions in an I2L cell but not in a conventional n-p-n transistor. These leaky junctions correlate with the observed low gain. A model is proposed to explain the cooling rate dependence of the dislocation networks in terms of vacancy clustering. Preoxidatioa gettering of oxidatiop-induced stacking faults in silicon by the phoq~rus diffusion process. JH~-HoRN~ C H ~ and MAO-CHIEHCHEN~Int. J. Electron. 47, (6) 555 (1979). Preoxidation gettering of oxidation,induced stacking faults (OSF) in a silicon wafer by the reverse side phosphorus diffusion-induced misfit dislocations has been studied. This gettering scheme either prevents the formation of OSF during the thermal oxidation of silicon or dea~.fiv~ttes the electrical activity of those OSF having been formed. The gettering action takes place by removing or isolating the impurities from being precipitated at the O S F nucleation sites and confines them to the misfit dislocations at the reverse side of the wafer. It is expected that the misfit dislocations confinueto act as sinks of impurities during the subsequent high-temperature oxidation process and results in a great improvement of device yield and performance. Chm'a~erizatiou ofm~'ace stateS i~ HCL-grown oxides using MOS transient eurrem*s. PAUL D. EsQu~A and MUKUNDA
B. DAS. Sol~St, Electron, /.3,365 (198Q), & fast,transiclat entreat (TC)technique has been develo,pe4~'tor, the characterization of n~,jgrity e ~ e r charge ~ s s i o r t ~0m surfar,~ states using MOS capacitors excit~ by a voltage step-function. This technique, with appropriate choice of initial and final biasing conditions, allows a rapid determination of the density of surface ~t,lties (N,,)'antl+theiir capture C~oss section values (or,) m pre~! .ected regi~'~"Sof band gap using suitable temperature ambients.' k~ IoW temperature (li3°K) Was useaJ fbr regions Close to the bottom of conduction band and room temperature and moderately low temperatures were used for the mid-gacp region. Results of transient current me~urementsWere compared with those obtained from thermally stimulated current and low frequency C-V measurements. The MOS devices were fabricated using [I00] oriented n-type (6-8 [~cm) silicon on n + substrates with HCi added to ~the oxidizing ambient. The detectability limit of the T C technique has been found to b e approximately 1 × 10~° cm- 2 eV- x for the device are used. Charge injection from a surface depletion region--the AI203~syst~n. J. KOLK and E. L. HI~A~BLL.Solid-St. Electron: Z3~ 223 (1980). Electron injection from a surface depletion region, over the surface barrier at an Al203-silicon interface is studied. The current passing over the barrier is .measured by observing the rate of flat-band voltage shift as charge is trapped in the oxide. The data obtained is compared;with the predictions of present models for charge injection. It is found that the.socalled "lucky-electron"model gives the most gencxally satisfactory agreement with the observations. Paraconductivity of Ge-eovered fin films. R. S. PARASHAR and P. N. DH~En. Solid St. Cornmun. 34, 113 (1980). The effect of a protective germanium layer on the excess electrical conductivity of thin Superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The reSUltsshow that the values of the pair-breaking: parameter for Ge-~overed films are much higher than those for bare films. Properties o f plasma enhanced CVD silicon nitride: measurem~ts and interpretations. KES~TH M., MAX and GAY M. SAMUELSON.SolidSt. Technol. 137 (April 1980). The measurement techniques and ~the interpretations of the properties of plasma enhanced CVD silicon nitride are discussed. These properties include structure: (Si-H, N-H, and Si-N), composition (Si/N), physical (uv absorption edge, index of refraction, mechanical stress, and density), and electrical (dielectric, d.c. conductivity and CV). I.R. and elemental composition measurements reveal that SiWs are highly nonstoichiometric with 1.93 x 1022/cm3 bonded H. This high degree of nonstoichiometry is reflected in the values of the uv absorption edge and mechanical stress when they are compared to those of the higher temperature CVD nitride. In the frequency range of 103-106 Hz, dielectric dispersion and absorption are observed. The d.c. conductivity and CV measurements on MNS structures support a bulk controlled conduction mechanism. Semi-empirical APW calculation of the band structure of silicon. D. A. PAPACONSTANTOPQ~L(~and B. M. KLWN. Solid St. Commun. 34, 511 (1980), We propose a modification tO the usual augmented-plane,wave muffin-tin approximation approach which fits exactly the measured value of the hand gap of Si. The method involves one adjustable parameter which is introduced by a uniform shift of the slike logarithmic derivatives. The results are in good agreement with those of the empirical pseudopotential method not only for the gap but also for an energy range of approximately 3 eV fromth¢ top of the valence hand.
Worm Abstracts on Mi~ooketronics and Reliability
SXLXCE and. J. DBSPU~OLS.Solid-St. Electron,23, 243 (t980). MNS capacitors were subnmtted to a series of alternating voltage pulse, and meascrc~acats were. l~n£ormcd at different stages of this cycling, The interface state parameters at the Sj-Si3N4 interface were. evaluat~l using the conductance method; the surface potential ~ was obtained from a measurement of the high-frequency capacitance. Experimental results are explained by the formation, during cycling, of new fast surface states located at the Si-Si3N, interface.
Avala~he i n , tim in MINOS gate controlled diodes. PHILLIP Rtrrr~. S o l i d St. Electron. 23, 441 (1980). Avalanche injection into a dielectric due to hot, electrons produced by breakdown in a depletion region is investigated in a simplified manner. A closed form solution for the field distribution at breakdown is presented which provides an insight into the injection properties under varying physical conditions, The mode! presented describes the junction breakdown characteristics of a Metal-Nitride-Oxide-Silicon gated diode. This device is capable of being written and erased into various charge states thus varying the breakdown properties of ,the junction. This is anaiysed in detail where the major parameters are considered to be (i) junction "walk-out~ distance (ii) depletion width (iii) applied junction bias (iv)applied gate bias. An influence of the rate of epitaxinl growth on physical of g ~ l ~ l l ~ . DANUTADOBO~Z and JBRZY PlrrnYK. Electron Technol, 12, (2) 103 (1979). The present paper discusses the relation between the rate of epitaxial growth and both electrical and luminescence properties of vapour phase epitaxial GaN layers grown on (0001) ~A1203 substrates` The growth rate has been varied by n~eans of HCI flow control and/or by changing the type of carrier gas. In the latter case helium was found prominent for high growth rate to be~ preserved: Cathodoluminescence studies proved unintentional doping to be dependent on purity of the carrier gas a n d t o be the function of GaN deposition rate. The eff~ts ofpl~lphOrm diffmion ¢ooli~ ~ t e on i2L gain. l ~ I t ~ q D L. Mo~t~, Solid St. Electron, 23, 457 (t980). It has been found that the current gain of an I2L cell can be seriously degraded ff~ the deep collector (PhOsphorus) diffusion is not slow cooled. A correlation between improper cooling rate and the generation of a severe edge dislocation network is established. This network, is shown to result in leaky emitter-base and collector-base junctions in an I2L cell but not in a conventional n-p-n transistor. These leaky junctions correlate with the observed low gain. A model is proposed to explain the cooling rate dependence of the dislocation networks in terms of vacancy clustering. Preoxidatioa gettering of oxidatiop-induced stacking faults in silicon by the phoq~rus diffusion process. JH~-HoRN~ C H ~ and MAO-CHIEHCHEN~Int. J. Electron. 47, (6) 555 (1979). Preoxidation gettering of oxidation,induced stacking faults (OSF) in a silicon wafer by the reverse side phosphorus diffusion-induced misfit dislocations has been studied. This gettering scheme either prevents the formation of OSF during the thermal oxidation of silicon or dea~.fiv~ttes the electrical activity of those OSF having been formed. The gettering action takes place by removing or isolating the impurities from being precipitated at the O S F nucleation sites and confines them to the misfit dislocations at the reverse side of the wafer. It is expected that the misfit dislocations confinueto act as sinks of impurities during the subsequent high-temperature oxidation process and results in a great improvement of device yield and performance. Chm'a~erizatiou ofm~'ace stateS i~ HCL-grown oxides using MOS transient eurrem*s. PAUL D. EsQu~A and MUKUNDA
B. DAS. Sol~St, Electron, /.3,365 (198Q), & fast,transiclat entreat (TC)technique has been develo,pe4~'tor, the characterization of n~,jgrity e ~ e r charge ~ s s i o r t ~0m surfar,~ states using MOS capacitors excit~ by a voltage step-function. This technique, with appropriate choice of initial and final biasing conditions, allows a rapid determination of the density of surface ~t,lties (N,,)'antl+theiir capture C~oss section values (or,) m pre~! .ected regi~'~"Sof band gap using suitable temperature ambients.' k~ IoW temperature (li3°K) Was useaJ fbr regions Close to the bottom of conduction band and room temperature and moderately low temperatures were used for the mid-gacp region. Results of transient current me~urementsWere compared with those obtained from thermally stimulated current and low frequency C-V measurements. The MOS devices were fabricated using [I00] oriented n-type (6-8 [~cm) silicon on n + substrates with HCi added to ~the oxidizing ambient. The detectability limit of the T C technique has been found to b e approximately 1 × 10~° cm- 2 eV- x for the device are used. Charge injection from a surface depletion region--the AI203~syst~n. J. KOLK and E. L. HI~A~BLL.Solid-St. Electron: Z3~ 223 (1980). Electron injection from a surface depletion region, over the surface barrier at an Al203-silicon interface is studied. The current passing over the barrier is .measured by observing the rate of flat-band voltage shift as charge is trapped in the oxide. The data obtained is compared;with the predictions of present models for charge injection. It is found that the.socalled "lucky-electron"model gives the most gencxally satisfactory agreement with the observations. Paraconductivity of Ge-eovered fin films. R. S. PARASHAR and P. N. DH~En. Solid St. Cornmun. 34, 113 (1980). The effect of a protective germanium layer on the excess electrical conductivity of thin Superconducting films of tin has been investigated. The films were deposited on glass substrate held at room temperature. The reSUltsshow that the values of the pair-breaking: parameter for Ge-~overed films are much higher than those for bare films. Properties o f plasma enhanced CVD silicon nitride: measurem~ts and interpretations. KES~TH M., MAX and GAY M. SAMUELSON.SolidSt. Technol. 137 (April 1980). The measurement techniques and ~the interpretations of the properties of plasma enhanced CVD silicon nitride are discussed. These properties include structure: (Si-H, N-H, and Si-N), composition (Si/N), physical (uv absorption edge, index of refraction, mechanical stress, and density), and electrical (dielectric, d.c. conductivity and CV). I.R. and elemental composition measurements reveal that SiWs are highly nonstoichiometric with 1.93 x 1022/cm3 bonded H. This high degree of nonstoichiometry is reflected in the values of the uv absorption edge and mechanical stress when they are compared to those of the higher temperature CVD nitride. In the frequency range of 103-106 Hz, dielectric dispersion and absorption are observed. The d.c. conductivity and CV measurements on MNS structures support a bulk controlled conduction mechanism. Semi-empirical APW calculation of the band structure of silicon. D. A. PAPACONSTANTOPQ~L(~and B. M. KLWN. Solid St. Commun. 34, 511 (1980), We propose a modification tO the usual augmented-plane,wave muffin-tin approximation approach which fits exactly the measured value of the hand gap of Si. The method involves one adjustable parameter which is introduced by a uniform shift of the slike logarithmic derivatives. The results are in good agreement with those of the empirical pseudopotential method not only for the gap but also for an energy range of approximately 3 eV fromth¢ top of the valence hand.