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SiO2 ultra thin film growth kinetics as investigated by surface techniques
A244 32
Surface Science 118 (1982) 32-46 North-Holland Publishing C o m p a n y
SiO z ULTRA THIN FILM G R O W T H KINETICS AS I N V E S T I G A T E D BY S U R F A C E T E C H N I Q U E S J. DERRIEN Universitb de Haute-Alsace, ISEA, 4 Rue des f'rbres Lumtbre, 1"-68093 Mulhouse Cedex. f'rance
and M. COMMANDRE Facult~ des Sctences de Luminy. ERA C,,VRS 899. D~'partement de Physique, f'-13288 Mar~ed/e Cedex 9, France Received 15 December 1981: accepted for publication 26 February 1982 During the manufacture of metal-insulator semiconductor devices (MIS) under ultra high vacuum conditions, the thermal oxidation of silicon substrates has been carefully investigated with Auger electro n sPectroscopy and electron energy loss spectroscopy techniques. Oxidation kinetics for ultra thin (0-30 ~,) oxide layers have been plotted in situ, The experimental measurements can be fitted with computed plots derived from a phenomenological model based on oxygen diffusion through the oxide layer under the presence of a surface electric field. A transition layer was found to form at the Si-SiO 2 interface. Moreover, the deposition of aluminium onto the SiO2 layer (required to achieve MIS structures) caused a reduction in silica, creating a complex metal-insulator interface.
Surface Science 118 (1982)47-56 North-Holland Publishing C o m p a n y
47
T H E R M A L D E S O R P T I O N U S I N G AES: S O M E E X A M P L E S OF ADSORBATE-ADSORBATE INTERACTION K.J. R A W L I N G S , S.D. FOUL1AS, (3.(3. PRICE and B.J. HOPKINS Surface PlTvsics. University of Southampton, Southampton S09 5N tL UK Received 30 June 1981: accepted for publication 2 March 1982 A simple method of analysing step-wise thermal desorption data has been devised which allows the relationship between adsorbate binding energy and coverage to be deduced. The method has been applied to three adsorbates on W(100), each of which is expected to obey first order thermal desorption kinetics. All three gases (C2H 2, CI 2, 12) exhibited a substantial variation of binding energy with coverage.
Surface Science 118 (1982) 57-65 North-Holland Publishing Company
57
H E L I U M D I F F R A C T I O N F R O M MgO(100) K.H. R I E D E R I B M Zurich Research Laboratoo,, CH-8803 Rueschlikon, Switzerland Received 19 November 1981: accepted for publication 24 February 1982 Helium diffraction from the cleavage plane of MgO was studied with different He energies and different angles of incidence. Hard-wall intensity analyses of in-plane and out-of-plane spectra obtained with 63 and 86 meV yielded the corrugation function, which is simply sinusoidal in both
Surface Science 118 (1982) 32-46 North-Holland Publishing C o m p a n y
SiO z ULTRA THIN FILM G R O W T H KINETICS AS I N V E S T I G A T E D BY S U R F A C E T E C H N I Q U E S J. DERRIEN Universitb de Haute-Alsace, ISEA, 4 Rue des f'rbres Lumtbre, 1"-68093 Mulhouse Cedex. f'rance
and M. COMMANDRE Facult~ des Sctences de Luminy. ERA C,,VRS 899. D~'partement de Physique, f'-13288 Mar~ed/e Cedex 9, France Received 15 December 1981: accepted for publication 26 February 1982 During the manufacture of metal-insulator semiconductor devices (MIS) under ultra high vacuum conditions, the thermal oxidation of silicon substrates has been carefully investigated with Auger electro n sPectroscopy and electron energy loss spectroscopy techniques. Oxidation kinetics for ultra thin (0-30 ~,) oxide layers have been plotted in situ, The experimental measurements can be fitted with computed plots derived from a phenomenological model based on oxygen diffusion through the oxide layer under the presence of a surface electric field. A transition layer was found to form at the Si-SiO 2 interface. Moreover, the deposition of aluminium onto the SiO2 layer (required to achieve MIS structures) caused a reduction in silica, creating a complex metal-insulator interface.
Surface Science 118 (1982)47-56 North-Holland Publishing C o m p a n y
47
T H E R M A L D E S O R P T I O N U S I N G AES: S O M E E X A M P L E S OF ADSORBATE-ADSORBATE INTERACTION K.J. R A W L I N G S , S.D. FOUL1AS, (3.(3. PRICE and B.J. HOPKINS Surface PlTvsics. University of Southampton, Southampton S09 5N tL UK Received 30 June 1981: accepted for publication 2 March 1982 A simple method of analysing step-wise thermal desorption data has been devised which allows the relationship between adsorbate binding energy and coverage to be deduced. The method has been applied to three adsorbates on W(100), each of which is expected to obey first order thermal desorption kinetics. All three gases (C2H 2, CI 2, 12) exhibited a substantial variation of binding energy with coverage.
Surface Science 118 (1982) 57-65 North-Holland Publishing Company
57
H E L I U M D I F F R A C T I O N F R O M MgO(100) K.H. R I E D E R I B M Zurich Research Laboratoo,, CH-8803 Rueschlikon, Switzerland Received 19 November 1981: accepted for publication 24 February 1982 Helium diffraction from the cleavage plane of MgO was studied with different He energies and different angles of incidence. Hard-wall intensity analyses of in-plane and out-of-plane spectra obtained with 63 and 86 meV yielded the corrugation function, which is simply sinusoidal in both