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Solid-state electronics special issue foreword
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Solid-State Electronics 51 (2007) 1425 www.elsevier.com/locate/sse
Foreword
Solid-state electronics special issue foreword
This special issue of solid-state electronics is dedicated to topics discussed during the 36th European Solid-State Device Research Conference (ESSDERC) held in Montreux in September 2006. It comprises 4 plenary and invited papers written by eminent experts as well as 25 contributed papers selected from a large number of ESSDERC’06 communications. The main topics of ESSDERC 2006 corresponded to the following competitive research areas: advanced devices; IC manufacturing; telecommunication, high voltage and power devices; modeling and simulation; characterization and reliability; memory and system-on-chip technologies; sensors, MEMS, flexible electronics and bio-electronic; emerging devices, nano-technology, nano-photonics, quantum and spin electronics. The conference program also included, for the first time, two joint ESSDERC/ESSCIRC tracks, on ‘‘emerging nanodevices and circuits’’ to illustrate the strong interactions developing between the circuits and device research communities. In 2006, the ESSDERC conference received a total of 255 submissions originating from 25 countries, with 154 papers coming from Europe, 64 from Asia-Pacific and 25 from the Americas, which demonstrates the international
0038-1101/$ - see front matter Ó 2007 Published by Elsevier Ltd. doi:10.1016/j.sse.2007.11.002
nature of the ESSDERC. It is worth noting that more than 25% of the submissions came from the industry. The difficult task of selecting the best papers was carried out by a top-quality Technical Program Committee (TPC) consisting of 114 world-class experts from academia as well as from industry. The TPC finally selected 97 papers, all for oral presentations, corresponding to a fairly restrictive acceptance rate of 38%. The papers selected for this special issue deal with advanced device concepts and CMOS technology modules, non-classical transistor architectures, novel memory devices, high voltage devices, electrical characterization, modeling and simulation of various device categories, emerging nano-technology, nano-materials and related nano-device concepts, MEMS and sensors. This diversity reflects the various research paths on which the microelectronics community is focusing today the main efforts: the More Moore, the Beyond CMOS and the More-than-Moore domains. We wish our readers nice and fruitful study of the content and, we hope this special issue will give them scientific satisfaction and inspiration in their own research activities. Guest Editors Adrian M. Ionescu Yusuf Leblebici Institute of Microelectronics and Microsystems, Ecole Polytechnique Fe´de´rale de Lausanne – EPFL, Switzerland
Solid-State Electronics 51 (2007) 1425 www.elsevier.com/locate/sse
Foreword
Solid-state electronics special issue foreword
This special issue of solid-state electronics is dedicated to topics discussed during the 36th European Solid-State Device Research Conference (ESSDERC) held in Montreux in September 2006. It comprises 4 plenary and invited papers written by eminent experts as well as 25 contributed papers selected from a large number of ESSDERC’06 communications. The main topics of ESSDERC 2006 corresponded to the following competitive research areas: advanced devices; IC manufacturing; telecommunication, high voltage and power devices; modeling and simulation; characterization and reliability; memory and system-on-chip technologies; sensors, MEMS, flexible electronics and bio-electronic; emerging devices, nano-technology, nano-photonics, quantum and spin electronics. The conference program also included, for the first time, two joint ESSDERC/ESSCIRC tracks, on ‘‘emerging nanodevices and circuits’’ to illustrate the strong interactions developing between the circuits and device research communities. In 2006, the ESSDERC conference received a total of 255 submissions originating from 25 countries, with 154 papers coming from Europe, 64 from Asia-Pacific and 25 from the Americas, which demonstrates the international
0038-1101/$ - see front matter Ó 2007 Published by Elsevier Ltd. doi:10.1016/j.sse.2007.11.002
nature of the ESSDERC. It is worth noting that more than 25% of the submissions came from the industry. The difficult task of selecting the best papers was carried out by a top-quality Technical Program Committee (TPC) consisting of 114 world-class experts from academia as well as from industry. The TPC finally selected 97 papers, all for oral presentations, corresponding to a fairly restrictive acceptance rate of 38%. The papers selected for this special issue deal with advanced device concepts and CMOS technology modules, non-classical transistor architectures, novel memory devices, high voltage devices, electrical characterization, modeling and simulation of various device categories, emerging nano-technology, nano-materials and related nano-device concepts, MEMS and sensors. This diversity reflects the various research paths on which the microelectronics community is focusing today the main efforts: the More Moore, the Beyond CMOS and the More-than-Moore domains. We wish our readers nice and fruitful study of the content and, we hope this special issue will give them scientific satisfaction and inspiration in their own research activities. Guest Editors Adrian M. Ionescu Yusuf Leblebici Institute of Microelectronics and Microsystems, Ecole Polytechnique Fe´de´rale de Lausanne – EPFL, Switzerland