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Solid state photoresist technology
WORLD
ABSTRACTS
ON MICROELECTRONICS
by use of the stored-charge concept will be less expensive and faster, and will require less power than a magnetic counterpart now in use.
AND RELIABILITY
19
layers obtained with the methods described were characterized by chemical determination and electrical measurements. Their crystallographic properties were investigated by X-ray topography and chemical attack.
P r o b l e m e der Fehlererkennung in Masken ffir integrierte Halbleiterschaltungen bei koh~irentoptischer Filterung. G. WINZER, N. DOUKLIAS and H. P. KRAFT. Frequenz 25, No. 8, August (1971), p. 220.
Properties and processes for photoresists in s e m i conductor manufacture. K. G. CLARK. Solid State Technol., June (1971), p. 52. A review and an evaluation
(In German.) In the fabrication of integrated circuits the number of usable units is diminished by errors in the structure of photomasks. Total inspection of these masks with conventional methods is time-consuming. By spatial frequency filtering the intensity of errors, however, is enhanced in comparison to the intensity of correct mask structures. This procedure only requires angle alignment of the masks. In this paper the principle, its limitations and its layout of inspection apparatus and filter are described in detail. Furthermore the effect of amplitude and phase errors as well as different methods of analysis of errors are discussed.
of some of the commercially available photoresists which have been successfully proven in the manufacture of semiconductors is presented. Following the initial discussion on photopolymerization, four negative and three positive photoresist systems are described. These photoresists consist of ultraviolet light sensitive materials in a liquid state which after being coated on to a substrate are exposed to an ultraviolet light source. This is followed by suitable development processing, resulting in an amorphous rubber-like chemically resistant film adhering to the substrate, bearing a pattern, either negative or positive, of the photomask image.
Beam-leads, versatile chips with a built-in interconnection system. L. K. KEYs, F. J. FRANCIS and A. J. Russo. Prec. 21st Electronic Components Conf.,
Solid state photoresist technology. K. R. DUNHAM. Solid State Technol., June (1971), p. 41. The theory and
Washington DC, USA, 10-12 May (1971), p. 3. For many years the weakest part of the monolithic integrated circuit assembly process, whether in a standard package such as a flatpack or as part of a hybrid integrated circuit, has been the interconnection of the chip to the metallized substrate. This has played havoc with the over-all package device yield when compared to the yield of the inherently reliable silicon monolithic circuit batch process. The conventional chip-and-wire approach, handwiring at a reduced scale, has left much to be desired. A number of new approaches have been developed which offer hope in the 1970s. The most significant to the small hybrid integrated circuit prototype shop, who by far and away make up the majority of the hybrid integrated circuit producers, are the new flip-chip and beam-lead devices, particularly the beamlead devices. The latter approach to device interconnection can be adopted by hybrid integrated circuit producers using presently available processes and beamlead devices. This paper describes bonding conditions and tests for bonding beam-lead devices to screenprinted single-layer and multilayer conductor interconnects and to photoetched thin-film conductors.
A study of n e w shallow ditfusion techniques in silicon for m i c r o w a v e structures. M. CROSET and L. MERCANDALLI. Re*.). Tech. Thomson-CSF 3, No. 1, March (1971), p. 37. (In French.) New methods of diffusion in silicon are described. Boron, phosphorus or arsenic oxides in vitreous form are used as the source. The methods differ from the traditional processes in that their operating parameters are limited only to the silicon and source temperatures and the processing time. The use of inert processing atmospheres avoids the creation of silica and makes it possible to obtain, directly, diffusions in which the surface concentration and depth concentration is varied and reproducible. T h e diffused
significance of some fundamental factors influencing resist performance are discussed, including the subjects of adherence, coating thickness, thermal treatment and photoresponse.
Design considerations for a hybrid power series regulator. R. M. ENGLEZ and W. R. PETERSON. Prec. 21st Electronic Components Conf., Washington DC, USA, 10-12 May (1971), p. 163. This paper presents design considerations for a hybrid power series voltage regulator. A background of series regulation is explained. T h e detailed circuit design and hybrid design are presented along with some practical consideration of fabrication, assembly and application. A series of general guidelines are derived from experience with the product.
Nitride-oxide layer proofs m e m o r y against dam loss. R. F. VIETH. Electronics, 5 July (1971), p. 53. Running insulating layers of nitride and thin oxide beneath the metal gate of an M O S device creates an area that can store charge indefinitely; single transistor storage cell promises low cost.
Large silicon slice mounting. D. L. OLSON and K. M. KOLIWAD. I E E E Trans. Parts, Hybrids Pckg. PHP-7, No. 2, June (1971), p. 76. The effects of thermal expansion incompatibility between silicon slices and various metal substrates are described for adhesive and solder joints. Dependable solder and adhesive joints have been achieved in mounting 2-1n. silicon slices. The size of the silicon slices that can be solder or adhesive mounted to various substrates and withstand a specified temperature change was experimentally determined. Extrapolation of the present results can predict the suitability of substrate material for mounting larger than 2-in. silicon slices. A one-dimensional theoretical model was found to describe the trends of the experimental data.
ABSTRACTS
ON MICROELECTRONICS
by use of the stored-charge concept will be less expensive and faster, and will require less power than a magnetic counterpart now in use.
AND RELIABILITY
19
layers obtained with the methods described were characterized by chemical determination and electrical measurements. Their crystallographic properties were investigated by X-ray topography and chemical attack.
P r o b l e m e der Fehlererkennung in Masken ffir integrierte Halbleiterschaltungen bei koh~irentoptischer Filterung. G. WINZER, N. DOUKLIAS and H. P. KRAFT. Frequenz 25, No. 8, August (1971), p. 220.
Properties and processes for photoresists in s e m i conductor manufacture. K. G. CLARK. Solid State Technol., June (1971), p. 52. A review and an evaluation
(In German.) In the fabrication of integrated circuits the number of usable units is diminished by errors in the structure of photomasks. Total inspection of these masks with conventional methods is time-consuming. By spatial frequency filtering the intensity of errors, however, is enhanced in comparison to the intensity of correct mask structures. This procedure only requires angle alignment of the masks. In this paper the principle, its limitations and its layout of inspection apparatus and filter are described in detail. Furthermore the effect of amplitude and phase errors as well as different methods of analysis of errors are discussed.
of some of the commercially available photoresists which have been successfully proven in the manufacture of semiconductors is presented. Following the initial discussion on photopolymerization, four negative and three positive photoresist systems are described. These photoresists consist of ultraviolet light sensitive materials in a liquid state which after being coated on to a substrate are exposed to an ultraviolet light source. This is followed by suitable development processing, resulting in an amorphous rubber-like chemically resistant film adhering to the substrate, bearing a pattern, either negative or positive, of the photomask image.
Beam-leads, versatile chips with a built-in interconnection system. L. K. KEYs, F. J. FRANCIS and A. J. Russo. Prec. 21st Electronic Components Conf.,
Solid state photoresist technology. K. R. DUNHAM. Solid State Technol., June (1971), p. 41. The theory and
Washington DC, USA, 10-12 May (1971), p. 3. For many years the weakest part of the monolithic integrated circuit assembly process, whether in a standard package such as a flatpack or as part of a hybrid integrated circuit, has been the interconnection of the chip to the metallized substrate. This has played havoc with the over-all package device yield when compared to the yield of the inherently reliable silicon monolithic circuit batch process. The conventional chip-and-wire approach, handwiring at a reduced scale, has left much to be desired. A number of new approaches have been developed which offer hope in the 1970s. The most significant to the small hybrid integrated circuit prototype shop, who by far and away make up the majority of the hybrid integrated circuit producers, are the new flip-chip and beam-lead devices, particularly the beamlead devices. The latter approach to device interconnection can be adopted by hybrid integrated circuit producers using presently available processes and beamlead devices. This paper describes bonding conditions and tests for bonding beam-lead devices to screenprinted single-layer and multilayer conductor interconnects and to photoetched thin-film conductors.
A study of n e w shallow ditfusion techniques in silicon for m i c r o w a v e structures. M. CROSET and L. MERCANDALLI. Re*.). Tech. Thomson-CSF 3, No. 1, March (1971), p. 37. (In French.) New methods of diffusion in silicon are described. Boron, phosphorus or arsenic oxides in vitreous form are used as the source. The methods differ from the traditional processes in that their operating parameters are limited only to the silicon and source temperatures and the processing time. The use of inert processing atmospheres avoids the creation of silica and makes it possible to obtain, directly, diffusions in which the surface concentration and depth concentration is varied and reproducible. T h e diffused
significance of some fundamental factors influencing resist performance are discussed, including the subjects of adherence, coating thickness, thermal treatment and photoresponse.
Design considerations for a hybrid power series regulator. R. M. ENGLEZ and W. R. PETERSON. Prec. 21st Electronic Components Conf., Washington DC, USA, 10-12 May (1971), p. 163. This paper presents design considerations for a hybrid power series voltage regulator. A background of series regulation is explained. T h e detailed circuit design and hybrid design are presented along with some practical consideration of fabrication, assembly and application. A series of general guidelines are derived from experience with the product.
Nitride-oxide layer proofs m e m o r y against dam loss. R. F. VIETH. Electronics, 5 July (1971), p. 53. Running insulating layers of nitride and thin oxide beneath the metal gate of an M O S device creates an area that can store charge indefinitely; single transistor storage cell promises low cost.
Large silicon slice mounting. D. L. OLSON and K. M. KOLIWAD. I E E E Trans. Parts, Hybrids Pckg. PHP-7, No. 2, June (1971), p. 76. The effects of thermal expansion incompatibility between silicon slices and various metal substrates are described for adhesive and solder joints. Dependable solder and adhesive joints have been achieved in mounting 2-1n. silicon slices. The size of the silicon slices that can be solder or adhesive mounted to various substrates and withstand a specified temperature change was experimentally determined. Extrapolation of the present results can predict the suitability of substrate material for mounting larger than 2-in. silicon slices. A one-dimensional theoretical model was found to describe the trends of the experimental data.