- Email: [email protected]
Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath
Accepted Manuscript Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath Anjana Kothari, Kunjal Dave PII: DOI: Reference:
S0167-577X(18)31683-5 https://doi.org/10.1016/j.matlet.2018.10.108 MLBLUE 25150
To appear in:
Materials Letters
Received Date: Revised Date: Accepted Date:
1 September 2018 6 October 2018 16 October 2018
Please cite this article as: A. Kothari, K. Dave, Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath, Materials Letters (2018), doi: https://doi.org/10.1016/j.matlet. 2018.10.108
This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath Anjana Kothari* and Kunjal Dave§
Dr. K C Patel Research and Development Centre (KRADLE) Charotar University of Science and Technology (CHARUSAT) CHARUSAT Campus, Changa, Gujarat 388 421, India §
Former Student, KRADLE, CHARUSAT, Changa
*Corresponding author: [email protected]
Abstract. Solution-based deposition techniques are emerging as an efficient route for low-cost photovoltaics(PV). We report deposition of tin sulphide (SnS) nanostructures (NS) from a simple, mechanochemically prepared precursor solution (PS) bath. Initially, to check the suitability of PS, SnS NS particles have been synthesized at low-temperature and deposition time in three atmospheres: air, vacuum, argon. In air atmosphere, spherical shaped particles of size ~300nm have been grown. In argon and vacuum atmospheres, the particles show layered growth with few agglomerated bunches. Shiny, adhesive films of NS SnS have been deposited at room temperature (R.T.), 40˚C and 50˚C. X-ray diffractogram shows the NS belong to orthorhombic SnS phase. Scanning electron microscopy reveals these nanostructures are nanoflakes(~30nm), nanostrands(~20-50nm) and nanopetals(~100nm) formed at different temperatures. The RMS roughness of films has been reported. The optical energy bandgap value derived for all the films is ~1.4 eV.
Keywords: SnS Nanostructures; Solution-based deposition; mechanochemistry; X-ray Diffraction; Electron Microscopy; Solar energy materials
Page 1 of 9
1. Introduction Solution-based deposition techniques are nowadays considered as one of the alternatives to accomplish the need of low-cost PV. These techniques not only widely exploits the earthabundant, low-cost, non-toxic elements such as Cu, Sn, Zn, etc., but also forms various nanostructures of high aspect-ratio which have proven their ability to harness maximum solar radiation compared to the bulk[1,2]. Hence, development of such nanostructures by low-cost, non-vacuum, low-temperature processes has emerged as one of the major objectives these days. SnS, a potential solar cell material[3], shows high optical absorption above the photon energy threshold of 1.3eV and intrinsic p-type conductivity with carrier concentrations in the range 10151018 cm-3[4,5]. SnS films have been deposited by various techniques such as spray pyrolysis[6], CBD[7], SILAR[8], etc. To get pure phase of SnS, either a typical experimental set-up or an inert gas atmosphere, is required. In this paper, we report an ancient method, mechnochemical wet grinding[9-11], to grow SnS NS from the mechanochemically prepared aqueous PS bath. 2. Experimental SnS NS were prepared by simple mechanochemical method using agate mortar and pestle. In a typical process, triethanolamine (C6H15NO3,1M) was added to metal salt (SnCl2.2H2O,0.1M) during the grinding process. Then, thioacetamide (C2H5NS,0.1M) and ammonia (NH3 30%,1M) were added sequentially to make the final volume 100 ml by using triple distilled water. Solution was then transferred in a beaker which contained a scrupulously cleaned microscopic glass substrate kept at 65˚ angle to the horizontal line. The films were deposited at R.T., 40˚ and 50˚C temperature using a hot water bath. The color of the PS turned milky, yellow, brown, deep brown and dark red within 24 h. After deposition, films were rinsed, dried and then collected. All the films were adhesive and smooth. The chemicals used were of analytical reagent grade supplied by Merck India Ltd. The structural study of the particles and nanostructured films was carried out by X-ray diffraction (XRD) plots (/2) recorded with a Bruker D2 Phaser X-ray Diffractometer (using Ni filtered CuK radiation) from 20-70 degree. Morphology of the particles and films were studied with the Scanning Electron Microscope (SEM, LEOs:440i) and Atomic Force Microscope (Nanosurf Easyscan2). The transmittance spectra of NS SnS films were recorded using Shimadzu UV-1800 spectrophotometer in the wavelength range 300 to 1100 nm.
Page 2 of 9
3. Results and discussion The precursor solution prepared by mechanochemical wet grinding is firstly used to check its suitability to prepare NS SnS particles at low temperature and deposition time. The optimum growth conditions in different atmospheres are: in air (200˚C, 3hour (h)), in vacuum (200˚C,1h) and in argon (350˚C,2h). SnS particles prepared in air are deep brown colored, whereas those prepared in vacuum and argon are gray colored. In air atmosphere, when PS is heated at 100˚C for different time duration (1h-4h), no remarkable change is observed except the viscosity. The semisolid product forms after 150˚C remain in that form upto 200˚C. At this temperature, dry powder has formed only after a prolong heating of 3h. However, sticky lumps of tin oxide are formed above 200˚C (i.e., 250˚-400˚C) when annealed for more than 3h. In vacuum, the solvents evaporate at 100˚C within 2h forming dry powder at 200˚C in 1h. Further heating at 300˚C for 30 min and higher time duration forms semisolid lumps. In argon atmosphere, the solvents evaporate within 1h in the temperature range 100-200˚C leaving a semisolid product. Further heating upto 300˚C for 1h-2h forms sticky lumps which finally converted to gray colored bunches at 350˚C, 2h. XRD plot of SnS particles prepared in three different atmospheres is shown in Fig. 1. All the lines are identified to be of orthorhombic SnS (JCPDS:39-0354) with a sharp diffraction line of (111). The powder prepared in argon atmosphere shows strong XRD lines (120), (021), (101), (040) and (131) with relative intensities 65, 68, 67, 76 and 49%, respectively. Few weak lines of (231), (251) and (232) are also present with relative intensity below 23%. For vacuum prepared powder, the reflections (120), (101), (111) and (131) of relative intensity 37, 50, 100 and 39% have been recorded for 2values 26.077, 30.512, 31.536 and 39.032, respectively. Air prepared samples (inset) show presence of SnO2, Sn2S3 and SnS. The surface morphology of SnS particles are shown in Fig.1(a-c). The particles prepared in argon and vacuum form agglomerated bunches and show layered growth of the material. The particles prepared in air atmosphere are spherical and have particles size about 300nm. There are few agglomerated particles present with the single spherical particles.
Page 3 of 9
Fig. 1 X-ray diffractogram and Scanning Electron Microphotographs of SnS particles prepared in (a) argon, (b) vacuum and (c) air atmosphere. Inset images: amplified XRD of SnS powder prepared in air atmosphere) Shiny, adhesive and dense films of NS SnS were deposited on glass substrate at R.T, 40˚ and 50˚C. Visually, the films deposited were of gray color but appeared to be wine red color in sky light transmission. However, the films deposited at higher temperature, i.e. at 55 and 60oC, yielded non-uniform and patchy deposits with pinholes. Figure 2 represents an XRD plot of NS SnS films deposited at different temperature. The diffraction peaks indexed as (120), (021), (101), (111), (131) and (210) proves the formation of orthorhombic SnS phase (JCPDF:39-0354). With this, very few weak lines (110), (040), (002) (231), (250), (251), (232) and (311) of relative intensity below 10% are also present. The films
Page 4 of 9
Fig. 2 X-ray diffractogram of NS SnS films deposited on glass substrate at (a) R.T., (b) 40˚C and (c) 50˚C. Inset plots: XRD of SnS films deposited at 50oC. show absence of mixed phases of SnS2, Sn2S3, Sn3S4 and SnO2. SEM images of typical NS SnS films deposited at different temperature are shown in Fig. 3. Figure 3(a) shows film having continuous coverage of spherically assembled nanoflakes deposited at R.T. The films comprised of spherical assemblies of dia. ~1m (Top-view, inset) made up of nanoflakes of thickness about 30nm. Cross-section image shows the films are about 800nm thick. The films deposited at 40˚C (Fig.3(b)) consist of spherical assemblies of size ~5001600nm (inset) made up of nanostrands of length ~200-800nm and dia. 20-50nm. It looks like woolen ball made up of fine strands with fine gap within them. But the cross-section of the film shows highly dense layered growth with typical thickness ~1m. Film deposited at 50˚C (Fig.3(c)) shows nanopetals of thickness ~100nm and length ~350nm. These intermingled structures connected non-uniformly with other petals show typical thickness of the film ~1.2m. The corresponding AFM images are presented in Fig. 3(d-f).
Page 5 of 9
Fig. 3 Scanning electron microphotographs of NS SnS films deposited at (a) R.T., (b) 40˚C and (c) 50˚C. Inset images are Cross-section and Top-view of the respective films; (d-f) Atomic Force Microphotographs of NS SnS films deposited at (d) R.T., (b) 40˚C and (c) 50˚C.
Page 6 of 9
The transmittance spectra of NS SnS films plotted in the wavelength range 300 to 1100nm are shown in Fig. 4. The films show low transmittance at lower wavelength range, indicates the film is compact. When the wavelength is higher than 650 nm, the transmittance increases rapidly for RT deposited films, which is slow above 750 nm for the films prepared at 40˚ and 50˚C. This increase in absorptance is due to the nanostructures grown at higher temperatures. The energy band gap (Eg) is estimated from the Tauc relation and is found to be ~1.3 eV for the films deposited at 40˚C. The films deposited at RT and 50oC show bandgap 1.4 eV which is close to the optimal bandgap of the solar cell.
Fig. 4 Transmittance spectra of NS SnS films deposited at different temperature; Inset plot represents Tauc relation. The growth mechanism of NS SnS films can be explained on the basis of mechanochemistry: At first, the reaction was carried out between the metal salt and sulfur source by mechanochemical method, i.e., by grinding. During this process, the rapid refinement of the particle microstructure, grain size or crystallite size, takes place. As a result, the reactions can occur at low temperature due to separation of the reacting phases by the product phases. Since the size of the powder particles generally decrease only to the micrometer level, a nanometer grain size is developed within each particle. Hence, the reactions when carried out under conditions of ‘liquid-assisted grinding’ [11] by adding complexing agent, TEA, it accelerates reaction mechanism. And as a
Page 7 of 9
result, the chemical reactions and phase transformations occur at low temperature (RT) without any externally applied heat. It is clearly seen that morphology of NS changes with increase in temperature. In general, the grain size increases with increase in temperature. The smaller grains formed at lower temperature coalesces at higher temperature and form bigger grains. Hence, the nanoflakes (~30nm) formed at R.T. (Fig.3(a)) results in nanostrands (~20-50nm) (Fig.3(b)) at 40oC which again changes to nanopetal (~100nm) at higher temperature (50oC) and formed cross-linked nanostructures (Fig.3(c)). All these NS films show continuous growth with very few overgrowths on its surface. The films show good surface coverage with uniform average crystallite size for a particular film. 4. Conclusions An ancient method, mechanochemical wet grinding, has been used to deposit NS SnS films from an aqueous chemical bath. Films consist of nanoflakes(~30nm), nanostrands(~2050nm) and nanopetals(~100nm) at respective deposition temperatures. The deposition method holds a promise for industrial production of various nanostructures of SnS. Acknowledgments The authors are grateful to the Chairman and Provost of Charotar University of Science and Technology for supporting this work and allowing them to publish. References [1]
B. Pejjai, et al., Internat. J. Hydrogen Energy 42 (2017) 2790-2831.
[2]
M. Graetzel, R.A.J. Janssen, D.B. Mitzi, E.H. Sargent, Nature 488 (2012) 304-312.
[3]
M. Becker, M. Wark, Cryst. Growth Des. 18 (2018) 4790–4806
[4]
H.H. Park, R. Heasley, L. Sun et al., Prog. Photovol. Res. Appl. 23 (2015) 901-908.
[5]
D. Avellaneda, M.T.S. Nair, P.K. Nair, Thin Solid Films 517 (2009) 2500-2502.
[6]
A.M.S. Arulanantham, S. Valanarasu, K. Jeyadheepan, V.G. MohdShkir, J. Molecul. Str. 1152 (2018) 137–144
[7]
M.S. Mahdi, et al., Mater. Lett. 210 (2018) 279–282.
[8]
E. Yücel, Y. Yücel, M. Durak, J. Mater. Sci.:Mater. Electron. 28 (2017) 2206-2214.
[9]
P. Baláž, T. Ohtani, Z. Bastl, E. Boldižárová, J. Solid State Chem. 144 (1999) 1-7.
[10]
E. Godočíková, P. Baláž, J.M. Criado, C. Real, E. Gock, Thermochem. Acta 440 (2006) 19-22.
[11]
K.D.M. Harris, Nature Chem. 5 (2013) 12-14.
Page 8 of 9
Highlights (for review)
NS SnS films have been deposited from mechanochemically prepared precursor bath.
The technique, mechanochemical wet grinding, is used to prepare the aqueous PS bath.
SnS films consist of nanoflakes, nanostrands and nanopetals at RT, 40°C and 50°C.
A simple deposition route holds a promise for industrial production of NS SnS.
Page 9 of 9
S0167-577X(18)31683-5 https://doi.org/10.1016/j.matlet.2018.10.108 MLBLUE 25150
To appear in:
Materials Letters
Received Date: Revised Date: Accepted Date:
1 September 2018 6 October 2018 16 October 2018
Please cite this article as: A. Kothari, K. Dave, Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath, Materials Letters (2018), doi: https://doi.org/10.1016/j.matlet. 2018.10.108
This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Solution-based deposition of SnS nanostructures from mechanochemically prepared precursor bath Anjana Kothari* and Kunjal Dave§
Dr. K C Patel Research and Development Centre (KRADLE) Charotar University of Science and Technology (CHARUSAT) CHARUSAT Campus, Changa, Gujarat 388 421, India §
Former Student, KRADLE, CHARUSAT, Changa
*Corresponding author: [email protected]
Abstract. Solution-based deposition techniques are emerging as an efficient route for low-cost photovoltaics(PV). We report deposition of tin sulphide (SnS) nanostructures (NS) from a simple, mechanochemically prepared precursor solution (PS) bath. Initially, to check the suitability of PS, SnS NS particles have been synthesized at low-temperature and deposition time in three atmospheres: air, vacuum, argon. In air atmosphere, spherical shaped particles of size ~300nm have been grown. In argon and vacuum atmospheres, the particles show layered growth with few agglomerated bunches. Shiny, adhesive films of NS SnS have been deposited at room temperature (R.T.), 40˚C and 50˚C. X-ray diffractogram shows the NS belong to orthorhombic SnS phase. Scanning electron microscopy reveals these nanostructures are nanoflakes(~30nm), nanostrands(~20-50nm) and nanopetals(~100nm) formed at different temperatures. The RMS roughness of films has been reported. The optical energy bandgap value derived for all the films is ~1.4 eV.
Keywords: SnS Nanostructures; Solution-based deposition; mechanochemistry; X-ray Diffraction; Electron Microscopy; Solar energy materials
Page 1 of 9
1. Introduction Solution-based deposition techniques are nowadays considered as one of the alternatives to accomplish the need of low-cost PV. These techniques not only widely exploits the earthabundant, low-cost, non-toxic elements such as Cu, Sn, Zn, etc., but also forms various nanostructures of high aspect-ratio which have proven their ability to harness maximum solar radiation compared to the bulk[1,2]. Hence, development of such nanostructures by low-cost, non-vacuum, low-temperature processes has emerged as one of the major objectives these days. SnS, a potential solar cell material[3], shows high optical absorption above the photon energy threshold of 1.3eV and intrinsic p-type conductivity with carrier concentrations in the range 10151018 cm-3[4,5]. SnS films have been deposited by various techniques such as spray pyrolysis[6], CBD[7], SILAR[8], etc. To get pure phase of SnS, either a typical experimental set-up or an inert gas atmosphere, is required. In this paper, we report an ancient method, mechnochemical wet grinding[9-11], to grow SnS NS from the mechanochemically prepared aqueous PS bath. 2. Experimental SnS NS were prepared by simple mechanochemical method using agate mortar and pestle. In a typical process, triethanolamine (C6H15NO3,1M) was added to metal salt (SnCl2.2H2O,0.1M) during the grinding process. Then, thioacetamide (C2H5NS,0.1M) and ammonia (NH3 30%,1M) were added sequentially to make the final volume 100 ml by using triple distilled water. Solution was then transferred in a beaker which contained a scrupulously cleaned microscopic glass substrate kept at 65˚ angle to the horizontal line. The films were deposited at R.T., 40˚ and 50˚C temperature using a hot water bath. The color of the PS turned milky, yellow, brown, deep brown and dark red within 24 h. After deposition, films were rinsed, dried and then collected. All the films were adhesive and smooth. The chemicals used were of analytical reagent grade supplied by Merck India Ltd. The structural study of the particles and nanostructured films was carried out by X-ray diffraction (XRD) plots (/2) recorded with a Bruker D2 Phaser X-ray Diffractometer (using Ni filtered CuK radiation) from 20-70 degree. Morphology of the particles and films were studied with the Scanning Electron Microscope (SEM, LEOs:440i) and Atomic Force Microscope (Nanosurf Easyscan2). The transmittance spectra of NS SnS films were recorded using Shimadzu UV-1800 spectrophotometer in the wavelength range 300 to 1100 nm.
Page 2 of 9
3. Results and discussion The precursor solution prepared by mechanochemical wet grinding is firstly used to check its suitability to prepare NS SnS particles at low temperature and deposition time. The optimum growth conditions in different atmospheres are: in air (200˚C, 3hour (h)), in vacuum (200˚C,1h) and in argon (350˚C,2h). SnS particles prepared in air are deep brown colored, whereas those prepared in vacuum and argon are gray colored. In air atmosphere, when PS is heated at 100˚C for different time duration (1h-4h), no remarkable change is observed except the viscosity. The semisolid product forms after 150˚C remain in that form upto 200˚C. At this temperature, dry powder has formed only after a prolong heating of 3h. However, sticky lumps of tin oxide are formed above 200˚C (i.e., 250˚-400˚C) when annealed for more than 3h. In vacuum, the solvents evaporate at 100˚C within 2h forming dry powder at 200˚C in 1h. Further heating at 300˚C for 30 min and higher time duration forms semisolid lumps. In argon atmosphere, the solvents evaporate within 1h in the temperature range 100-200˚C leaving a semisolid product. Further heating upto 300˚C for 1h-2h forms sticky lumps which finally converted to gray colored bunches at 350˚C, 2h. XRD plot of SnS particles prepared in three different atmospheres is shown in Fig. 1. All the lines are identified to be of orthorhombic SnS (JCPDS:39-0354) with a sharp diffraction line of (111). The powder prepared in argon atmosphere shows strong XRD lines (120), (021), (101), (040) and (131) with relative intensities 65, 68, 67, 76 and 49%, respectively. Few weak lines of (231), (251) and (232) are also present with relative intensity below 23%. For vacuum prepared powder, the reflections (120), (101), (111) and (131) of relative intensity 37, 50, 100 and 39% have been recorded for 2values 26.077, 30.512, 31.536 and 39.032, respectively. Air prepared samples (inset) show presence of SnO2, Sn2S3 and SnS. The surface morphology of SnS particles are shown in Fig.1(a-c). The particles prepared in argon and vacuum form agglomerated bunches and show layered growth of the material. The particles prepared in air atmosphere are spherical and have particles size about 300nm. There are few agglomerated particles present with the single spherical particles.
Page 3 of 9
Fig. 1 X-ray diffractogram and Scanning Electron Microphotographs of SnS particles prepared in (a) argon, (b) vacuum and (c) air atmosphere. Inset images: amplified XRD of SnS powder prepared in air atmosphere) Shiny, adhesive and dense films of NS SnS were deposited on glass substrate at R.T, 40˚ and 50˚C. Visually, the films deposited were of gray color but appeared to be wine red color in sky light transmission. However, the films deposited at higher temperature, i.e. at 55 and 60oC, yielded non-uniform and patchy deposits with pinholes. Figure 2 represents an XRD plot of NS SnS films deposited at different temperature. The diffraction peaks indexed as (120), (021), (101), (111), (131) and (210) proves the formation of orthorhombic SnS phase (JCPDF:39-0354). With this, very few weak lines (110), (040), (002) (231), (250), (251), (232) and (311) of relative intensity below 10% are also present. The films
Page 4 of 9
Fig. 2 X-ray diffractogram of NS SnS films deposited on glass substrate at (a) R.T., (b) 40˚C and (c) 50˚C. Inset plots: XRD of SnS films deposited at 50oC. show absence of mixed phases of SnS2, Sn2S3, Sn3S4 and SnO2. SEM images of typical NS SnS films deposited at different temperature are shown in Fig. 3. Figure 3(a) shows film having continuous coverage of spherically assembled nanoflakes deposited at R.T. The films comprised of spherical assemblies of dia. ~1m (Top-view, inset) made up of nanoflakes of thickness about 30nm. Cross-section image shows the films are about 800nm thick. The films deposited at 40˚C (Fig.3(b)) consist of spherical assemblies of size ~5001600nm (inset) made up of nanostrands of length ~200-800nm and dia. 20-50nm. It looks like woolen ball made up of fine strands with fine gap within them. But the cross-section of the film shows highly dense layered growth with typical thickness ~1m. Film deposited at 50˚C (Fig.3(c)) shows nanopetals of thickness ~100nm and length ~350nm. These intermingled structures connected non-uniformly with other petals show typical thickness of the film ~1.2m. The corresponding AFM images are presented in Fig. 3(d-f).
Page 5 of 9
Fig. 3 Scanning electron microphotographs of NS SnS films deposited at (a) R.T., (b) 40˚C and (c) 50˚C. Inset images are Cross-section and Top-view of the respective films; (d-f) Atomic Force Microphotographs of NS SnS films deposited at (d) R.T., (b) 40˚C and (c) 50˚C.
Page 6 of 9
The transmittance spectra of NS SnS films plotted in the wavelength range 300 to 1100nm are shown in Fig. 4. The films show low transmittance at lower wavelength range, indicates the film is compact. When the wavelength is higher than 650 nm, the transmittance increases rapidly for RT deposited films, which is slow above 750 nm for the films prepared at 40˚ and 50˚C. This increase in absorptance is due to the nanostructures grown at higher temperatures. The energy band gap (Eg) is estimated from the Tauc relation and is found to be ~1.3 eV for the films deposited at 40˚C. The films deposited at RT and 50oC show bandgap 1.4 eV which is close to the optimal bandgap of the solar cell.
Fig. 4 Transmittance spectra of NS SnS films deposited at different temperature; Inset plot represents Tauc relation. The growth mechanism of NS SnS films can be explained on the basis of mechanochemistry: At first, the reaction was carried out between the metal salt and sulfur source by mechanochemical method, i.e., by grinding. During this process, the rapid refinement of the particle microstructure, grain size or crystallite size, takes place. As a result, the reactions can occur at low temperature due to separation of the reacting phases by the product phases. Since the size of the powder particles generally decrease only to the micrometer level, a nanometer grain size is developed within each particle. Hence, the reactions when carried out under conditions of ‘liquid-assisted grinding’ [11] by adding complexing agent, TEA, it accelerates reaction mechanism. And as a
Page 7 of 9
result, the chemical reactions and phase transformations occur at low temperature (RT) without any externally applied heat. It is clearly seen that morphology of NS changes with increase in temperature. In general, the grain size increases with increase in temperature. The smaller grains formed at lower temperature coalesces at higher temperature and form bigger grains. Hence, the nanoflakes (~30nm) formed at R.T. (Fig.3(a)) results in nanostrands (~20-50nm) (Fig.3(b)) at 40oC which again changes to nanopetal (~100nm) at higher temperature (50oC) and formed cross-linked nanostructures (Fig.3(c)). All these NS films show continuous growth with very few overgrowths on its surface. The films show good surface coverage with uniform average crystallite size for a particular film. 4. Conclusions An ancient method, mechanochemical wet grinding, has been used to deposit NS SnS films from an aqueous chemical bath. Films consist of nanoflakes(~30nm), nanostrands(~2050nm) and nanopetals(~100nm) at respective deposition temperatures. The deposition method holds a promise for industrial production of various nanostructures of SnS. Acknowledgments The authors are grateful to the Chairman and Provost of Charotar University of Science and Technology for supporting this work and allowing them to publish. References [1]
B. Pejjai, et al., Internat. J. Hydrogen Energy 42 (2017) 2790-2831.
[2]
M. Graetzel, R.A.J. Janssen, D.B. Mitzi, E.H. Sargent, Nature 488 (2012) 304-312.
[3]
M. Becker, M. Wark, Cryst. Growth Des. 18 (2018) 4790–4806
[4]
H.H. Park, R. Heasley, L. Sun et al., Prog. Photovol. Res. Appl. 23 (2015) 901-908.
[5]
D. Avellaneda, M.T.S. Nair, P.K. Nair, Thin Solid Films 517 (2009) 2500-2502.
[6]
A.M.S. Arulanantham, S. Valanarasu, K. Jeyadheepan, V.G. MohdShkir, J. Molecul. Str. 1152 (2018) 137–144
[7]
M.S. Mahdi, et al., Mater. Lett. 210 (2018) 279–282.
[8]
E. Yücel, Y. Yücel, M. Durak, J. Mater. Sci.:Mater. Electron. 28 (2017) 2206-2214.
[9]
P. Baláž, T. Ohtani, Z. Bastl, E. Boldižárová, J. Solid State Chem. 144 (1999) 1-7.
[10]
E. Godočíková, P. Baláž, J.M. Criado, C. Real, E. Gock, Thermochem. Acta 440 (2006) 19-22.
[11]
K.D.M. Harris, Nature Chem. 5 (2013) 12-14.
Page 8 of 9
Highlights (for review)
NS SnS films have been deposited from mechanochemically prepared precursor bath.
The technique, mechanochemical wet grinding, is used to prepare the aqueous PS bath.
SnS films consist of nanoflakes, nanostrands and nanopetals at RT, 40°C and 50°C.
A simple deposition route holds a promise for industrial production of NS SnS.
Page 9 of 9