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Some recent results on low-temperature studies of cleaved Si and Ge surfaces
A108 Surface Science I68 (1986) 1-15 North-Holland. A m s t e r d a m
A T O M I C G E O M E T R I E S OF Z I N C B L E N D E C O M P O U N D SEMICONDUCTOR SURFACES: S I M I L A R I T I E S IN S U R F A C E R E H Y B R I D I Z A T I O N S A. K A H N Department of Electrical Engineering, Princeton Univer,~ity, Princeton. New ,lersev 08544, USA Received 10 June 1985; accepted for publication 14 June 1985 Atomic geometries of zincblende c o m p o u n d semiconductor surfaces are reviewed in the light of recent work done on ( 111 ) and (311 ) G a A s surfaces. The geometries derived from low-energy electron diffraction and from energy-minimization calculations, and electron energy-loss spectroscopy data on surface electronic transitions indicate that the microscopic structures of the (110), ( I l I ) - A and (311)-B surfaces have c o m m o n features and suggest that similar bond rehybridization mechanisms dominate atomic displacements at these surfaces.
Surface Science 168 (1986)16-27 North-Holland, A m s t e r d a m
S O M E R E C E N T R E S U L T S ON L O W - T E M P E R A T U R E OF C L E A V E D Si A N D Ge S U R F A C E S V.A. G R A Z H U L I S
STUDIES
ln,~titute ~)1'Solid State Physics, USSR Academy of Sctence~'. ('hernogolovka, Mos'cow district. I42432, USSR Received I[)June 1985: accepted for publication ]4 June 1985
Atomic structures of Si(ll 1) and Ge(1 II) clean cleaved surfaces at lo~ temperatures (1(~300 K) are discussed. It is experimentally shown that some Iow-Tcleavages can produce strongly disordered G c ( l l l ) - 2 × l surfaces ("amorphous-like" surfaces), however, with some traces of the 2×1 structure. The band bending and the Fermi-level pinning arc als~ briefly considered. It is supposed that near-to-surface dislocations can be introduced during the Ge and Si crystal cleavages and strongly affect the Fermi-level and electronic properties of these cleavages. The possible role of dish)cations in Schottkv barrier formation is also mentioned,
Surface Science I68 (1986) 28- 34 North-Holland, A m s t e r d a m
T H E E F F E C T OF S U R F A C E S T A T E S A N D B A N D B E N D I N G C H A N G E O N R E F L E C T I V I T Y OF C L E A V E D G a A s ( l l 0 ) AND GaP(ll0) F. CICCACCI, S. SELCI and G. C H I A R O U F I Dipartimento di Fisica, Universit~i di Roma "Tor Vergata", Rome. I-O01Z~, Italy
and
A T O M I C G E O M E T R I E S OF Z I N C B L E N D E C O M P O U N D SEMICONDUCTOR SURFACES: S I M I L A R I T I E S IN S U R F A C E R E H Y B R I D I Z A T I O N S A. K A H N Department of Electrical Engineering, Princeton Univer,~ity, Princeton. New ,lersev 08544, USA Received 10 June 1985; accepted for publication 14 June 1985 Atomic geometries of zincblende c o m p o u n d semiconductor surfaces are reviewed in the light of recent work done on ( 111 ) and (311 ) G a A s surfaces. The geometries derived from low-energy electron diffraction and from energy-minimization calculations, and electron energy-loss spectroscopy data on surface electronic transitions indicate that the microscopic structures of the (110), ( I l I ) - A and (311)-B surfaces have c o m m o n features and suggest that similar bond rehybridization mechanisms dominate atomic displacements at these surfaces.
Surface Science 168 (1986)16-27 North-Holland, A m s t e r d a m
S O M E R E C E N T R E S U L T S ON L O W - T E M P E R A T U R E OF C L E A V E D Si A N D Ge S U R F A C E S V.A. G R A Z H U L I S
STUDIES
ln,~titute ~)1'Solid State Physics, USSR Academy of Sctence~'. ('hernogolovka, Mos'cow district. I42432, USSR Received I[)June 1985: accepted for publication ]4 June 1985
Atomic structures of Si(ll 1) and Ge(1 II) clean cleaved surfaces at lo~ temperatures (1(~300 K) are discussed. It is experimentally shown that some Iow-Tcleavages can produce strongly disordered G c ( l l l ) - 2 × l surfaces ("amorphous-like" surfaces), however, with some traces of the 2×1 structure. The band bending and the Fermi-level pinning arc als~ briefly considered. It is supposed that near-to-surface dislocations can be introduced during the Ge and Si crystal cleavages and strongly affect the Fermi-level and electronic properties of these cleavages. The possible role of dish)cations in Schottkv barrier formation is also mentioned,
Surface Science I68 (1986) 28- 34 North-Holland, A m s t e r d a m
T H E E F F E C T OF S U R F A C E S T A T E S A N D B A N D B E N D I N G C H A N G E O N R E F L E C T I V I T Y OF C L E A V E D G a A s ( l l 0 ) AND GaP(ll0) F. CICCACCI, S. SELCI and G. C H I A R O U F I Dipartimento di Fisica, Universit~i di Roma "Tor Vergata", Rome. I-O01Z~, Italy
and