Acta, Vol. 30, No. II, p. 1579, 1985. Pergamon Press Ltd. Printed in Great Britain. Elecrrochimica
ERRATUM B. Smandek and H. Gerischer, Spectral depe...
Acta, Vol. 30, No. II, p. 1579, 1985. Pergamon Press Ltd. Printed in Great Britain. Elecrrochimica
ERRATUM B. Smandek and H. Gerischer, Spectral dependence of photo- and electroluminescence concentration in the n-GaPlelectrolyte system, Electrochim. Acta 30, 1101 (1985). The Publishers regret that due to a printing error the second paragraph paper contained an incorrect line. The paragraph should read:
on minority carrier
of the Introduction
of the above
The comparison of photoluminescence (PL) and electroluminescence (EL) is sought to lead to information on the properties of the surface near region of the semiconductor. Whereas PL is due to radiative recombination in the deeper layers of the semiconductor, depending on the absorption coefficient of the exciting light (at I = 476 nm, t( = lo3 cm-‘), EL is produced by injecting holes into the valence band of the semiconductor at the interface, leading to radiative recombination (Fig. 1). Experiments involving electrodes with a gradient of chemical composition show that EL originates on average closer to the surface than PL [%7], (this article).