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VG Semicon Press Statement Magnetically-coupled rotary hollow feedthroughs with wafer heating, which were the subject of Fisons plc's 1992 Patents County action against VSW Scientific Instruments Limited, are patented products of F i s o n s plc ( P a t e n t n u m b e r s US4945774 GB2213316 and FR2625920), and are part of the MBE product range of VG SEMICON, a Fisons group company. The magnetically coupled rotary feedthroughs shown on pages 9.5, 13.4, • 13.5, 13.6, 13.7,14.5 and 14.6 of the 1992/93 catalogue of VSW Ltd. are not available from VSW Ltd. or any other related company, and VSW Ltd, regret any misunderstanding or inconvenience caused. • For further information, please contact." Fisons Instruments, Intellectual Property Department, Tudor Road, Altrincham, Cheshire WA14 5RZ, UK,
• For further injormation about MBE products, please contact. • VG Semicon, The Birehes Industrial Estate, Imberhorne Lane, East Grinstead, West Sussex RH19 1XZ. Tell fax." 0342 325011/31580.
Spire Si-based LED
Tencor defect inspector Tencor Instruments, Mountain View, CA, USA) has introduced a new microscope review option for the Surfscan7600 patterned wafer inspection system. The new option allows direct optical review of detected defects without removing the wafer to another system. "The ability to have both inspection and review capabilities in one
system is particularly useful in facilities with limited fab space or where installing two separate systems is simply not cost-effective. By incorporating the review station directly into the 7600, operators can maximize use of the system for all applications from production to research and development," says Tencor. • Contact." Roberta Emerson, Tencor, 2400 Charleston Road, Mountain View, California 94043, USA. Tel~ fax: [44] (415) 969-6767.
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Spire Corp has demonstrated srong, room-temperature 1.54 p.m emission from Er implanted porous Si. Luminescence data show that the intensity of IR emission from Er-doped porous Si is 100 to 1000 times stronger than that of Er in quartz, and is almost at the level of inGaAsP material which is used for commercial infrared LEDs. No IR emission was observed from Er-doped bulk Si or GeSi produced under similar implantation and annealing conditions. Spire's results indicate that high luminescence efficiency originates from Er being confined in Si nanostructures less than 5 nm in diameter.
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