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Sputtering of silicate glasses
Abstracts
highly polymerized and has a dense structure of regular crosslinked network with only a few radicals. It is also found that the film is stable. There are no obvious free radicals in the films. Besides, the infrared absorptions caused by the oscillations of O - - H and C = O structures were observed. It is demonstrated that the presence of residual water vapor and oxygen in the discharge tube results in the formation of the observed O - - H and C------Ogroups. Since low-Z, oxygen-free thin films with structure integrity are desirable materials for the X-ray laser program, one of the objectives of this work was the application of the polymerlike films as substrates of X-ray laser targets. Owing to their insolubility and relatively high softening temperature, the polymerlike films have been used as substrates to produce thin sulfur targets in CS2 solution and thin germanium targets by electron beam evaporation.
target show different properties. The effect of excess PbO and dopants in PZT target on the rate of sputtering and film structure is discussed. The effect of gas ambient (argon and a r g o n + + oxygen) on the structure of the films is demonstrated for ZnO. The dielectric anomaly may be completely masked in ferroelectric films due to series resistance of electrodes and the interface barrier, even for those films which have the desired composition and structure. The influence of sputtering parameters on the interface states and fiat band shift in metal-oxidesilicon structure and their implications in device application has also been discussed for ZnO and PZT films.
Optical properties of oxide coatings deposited by dual-ion-beam sputter Charge build-up in polypropylene thin films Ding Hai, Pohl Institute, Tongji University, Siping Road 1239, Shanghai 200092, China Irradiation of insulating polymer films with nonpenetrating electron beams results in long-lasting space charge. The charge storage properties of polymer electrets are most important for their application. The location of the charge and the radiation-induced conductivity are interesting both for production of foil electrets and for the investigation of charge phenomena in such materials. In this paper, charge build-up in 30 #m thick films of polypropylene irradiated with monoenergetic electron beams of 1054 keV energy is investigated. Using the split-Faraday cap, the mean charge depth at the beginning of electron injection, at the termination of injection, and 10 min after injection are measured. It is found that the depth increases with time during charging, but decreases a little after injection of electron beams. The charge depth increases also with the amount of injected charge. From the dynamics of charge motion during irradiation, the radiationinduced conductivity is determined as a function of dose rate. It amounts to approximately 10-14 cm 1 at 10 4 rad s - J.
Invited paper
Tang Xuefei, Fan Zhengxiu and Wang Zhijiang, Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, PO Box 800211, Shanghai 201800, China The optical properties of single-layer TiO2, ZrO2 and SiO2 films deposited by dual-ion-beam sputter (DIBS) have been investigated and compared with films of the same materials deposited by thermal evaporation and ion assisted deposition (IAD). F o r DIBS deposition, the following deposition parameters were varied : composition of the sputter deposition gas mixture, composition of the ion assist gas mixture, temperature of substrates, and ion energy and ion current density for the ion assist beam. The influences of deposition parameters on optical properties of films deposited by DIBS are discussed. For DIBS films, the index of refraction approaches the bulk material values, the optical absorptions are much lower than those of films deposited by thermal evaporation and IAD, and the laser-induced damage thresholds (LIDT) are higher. High reflector coatings and antireflective coatings were deposited utilizing the optimum deposition parameters obtained from the single-layer studies. The reflections, optical absorptions and LIDT measurements of these films are reported. Electron micrographs of the surface and fractured cross-section of single-layer and multi-layer films deposited by DIBS are given and compared with films deposited by thermal evaporation and IAD.
Fabrication and characterization of rf sputtered oxide films Abhai Mansingh, Department of Physics and Astrophysics, University of Delhi, Delhi 110 007, India The effect of sputtering parameters on the growth and properties of transparent conducting (tin dipped indium oxide, ITO) piezoelectric (zinc oxide, ZnO) and ferroelectric (lead zirconate titanate, PZT) films is discussed. The effect of target substrate distance (in the range 2-7 cm) has been investigated in detail. In ITO the formation of the virtual source (thermalisation distance) has been established for oxide target sputtered in argon ambient, and it shifts towards the target when a small amount of oxygen is introduced. The properties of films depend on whether the substrate is above or below the virtual source. In PZT the formation of the virtual source is not clearly established but the films deposited at T-S distance above and below 4 cm from the
Sputtering of silicate glasses Shinya Miyazaki, Teruhiko Kai, Hiromichi Takebe and Kenji Morinaga, Department of Materials Science and Technology, Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasugakouen, Kasuga-shi, Fukuoka 816, Japan Silicon dioxide and silicate glass films were prepared by rfsputtering. Changes in thickness, composition, and structure of the films with sputtering time were investigated. High resolution X-ray fluorescence spectrometry and infrared spectroscopy were used to characterize the state of silicate anion in the films. We propose the sputtering mechanism of the silicate glasses. 1067
highly polymerized and has a dense structure of regular crosslinked network with only a few radicals. It is also found that the film is stable. There are no obvious free radicals in the films. Besides, the infrared absorptions caused by the oscillations of O - - H and C = O structures were observed. It is demonstrated that the presence of residual water vapor and oxygen in the discharge tube results in the formation of the observed O - - H and C------Ogroups. Since low-Z, oxygen-free thin films with structure integrity are desirable materials for the X-ray laser program, one of the objectives of this work was the application of the polymerlike films as substrates of X-ray laser targets. Owing to their insolubility and relatively high softening temperature, the polymerlike films have been used as substrates to produce thin sulfur targets in CS2 solution and thin germanium targets by electron beam evaporation.
target show different properties. The effect of excess PbO and dopants in PZT target on the rate of sputtering and film structure is discussed. The effect of gas ambient (argon and a r g o n + + oxygen) on the structure of the films is demonstrated for ZnO. The dielectric anomaly may be completely masked in ferroelectric films due to series resistance of electrodes and the interface barrier, even for those films which have the desired composition and structure. The influence of sputtering parameters on the interface states and fiat band shift in metal-oxidesilicon structure and their implications in device application has also been discussed for ZnO and PZT films.
Optical properties of oxide coatings deposited by dual-ion-beam sputter Charge build-up in polypropylene thin films Ding Hai, Pohl Institute, Tongji University, Siping Road 1239, Shanghai 200092, China Irradiation of insulating polymer films with nonpenetrating electron beams results in long-lasting space charge. The charge storage properties of polymer electrets are most important for their application. The location of the charge and the radiation-induced conductivity are interesting both for production of foil electrets and for the investigation of charge phenomena in such materials. In this paper, charge build-up in 30 #m thick films of polypropylene irradiated with monoenergetic electron beams of 1054 keV energy is investigated. Using the split-Faraday cap, the mean charge depth at the beginning of electron injection, at the termination of injection, and 10 min after injection are measured. It is found that the depth increases with time during charging, but decreases a little after injection of electron beams. The charge depth increases also with the amount of injected charge. From the dynamics of charge motion during irradiation, the radiationinduced conductivity is determined as a function of dose rate. It amounts to approximately 10-14 cm 1 at 10 4 rad s - J.
Invited paper
Tang Xuefei, Fan Zhengxiu and Wang Zhijiang, Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, PO Box 800211, Shanghai 201800, China The optical properties of single-layer TiO2, ZrO2 and SiO2 films deposited by dual-ion-beam sputter (DIBS) have been investigated and compared with films of the same materials deposited by thermal evaporation and ion assisted deposition (IAD). F o r DIBS deposition, the following deposition parameters were varied : composition of the sputter deposition gas mixture, composition of the ion assist gas mixture, temperature of substrates, and ion energy and ion current density for the ion assist beam. The influences of deposition parameters on optical properties of films deposited by DIBS are discussed. For DIBS films, the index of refraction approaches the bulk material values, the optical absorptions are much lower than those of films deposited by thermal evaporation and IAD, and the laser-induced damage thresholds (LIDT) are higher. High reflector coatings and antireflective coatings were deposited utilizing the optimum deposition parameters obtained from the single-layer studies. The reflections, optical absorptions and LIDT measurements of these films are reported. Electron micrographs of the surface and fractured cross-section of single-layer and multi-layer films deposited by DIBS are given and compared with films deposited by thermal evaporation and IAD.
Fabrication and characterization of rf sputtered oxide films Abhai Mansingh, Department of Physics and Astrophysics, University of Delhi, Delhi 110 007, India The effect of sputtering parameters on the growth and properties of transparent conducting (tin dipped indium oxide, ITO) piezoelectric (zinc oxide, ZnO) and ferroelectric (lead zirconate titanate, PZT) films is discussed. The effect of target substrate distance (in the range 2-7 cm) has been investigated in detail. In ITO the formation of the virtual source (thermalisation distance) has been established for oxide target sputtered in argon ambient, and it shifts towards the target when a small amount of oxygen is introduced. The properties of films depend on whether the substrate is above or below the virtual source. In PZT the formation of the virtual source is not clearly established but the films deposited at T-S distance above and below 4 cm from the
Sputtering of silicate glasses Shinya Miyazaki, Teruhiko Kai, Hiromichi Takebe and Kenji Morinaga, Department of Materials Science and Technology, Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasugakouen, Kasuga-shi, Fukuoka 816, Japan Silicon dioxide and silicate glass films were prepared by rfsputtering. Changes in thickness, composition, and structure of the films with sputtering time were investigated. High resolution X-ray fluorescence spectrometry and infrared spectroscopy were used to characterize the state of silicate anion in the films. We propose the sputtering mechanism of the silicate glasses. 1067