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Stabilization of semiconductor characteristics by vacuum treatment
Classified Abstracts 169--183 33 : 16 A method to determine the surface concentration of antimony and arsenic diffusing from the vapour phase into Germanium in high vacua. Relation between concentration and diffusion coefficient. See Abstr. No. 118. 33 : 30 The deposition of vacuum coatings by means of electron bombardment. See Abstr. No. 160. 33 : 30 Technological aspects of the thermal evaporation of semiconductors in ultra high vacuum. See Abstr. No, 165. 33:22 A quick reading ionization gauge.
See Abstr. No. 144.
33 " 16 173. Stabilization of semiconductor characteristics by vacuum treatment. (France) The concentration of free electrons is much smaller in the case of semiconductors than for metals. Thus copper contains approximately 102z electrons per cc, whilst the corresponding figures for germanium and silicon are 1043 and 101° respectively. As a result, the performance of semiconductors is profoundly affected by surface contamination and in order to ensure stability some form of surface protection or passivation must be adopted. The author describes experiments in which silicon diodes were subjected to ionic oxygen bombardment at low air pressure (10 -4 tort) the accelerating voltage being 10 kV. The treatment resulted in excellent stabilization of reverse current characteristics. (France) w. J, s. J. Bailleul-Langlais, Le Vide, 18 (106), July/Aug. 1963, 347-353.
33:22 Small cheap mass spectrometer.
83
See Abstr. No. 148.
33:22 The elimination of resistive films in hot cathodes ionization gauges. See Abstr. No. 145. 33:22 A versatile 6 in. radius mass spectrometer for isotopic anMysis of solids, liquids or gases. See Abstr. No. 147. 33 : 45 Welding reactor fuel cans by electron bombardment in vacuo. See Abstr. No. 210. 33 : 19 169. Photoelectric measurement of the work function of metals and its alteration after gas adsorption. (Great Britain) Following the procedure originally suggested by R. H. Fowler, the work function of tantalum and palladium was measured photoelectrically in an ultra-high vacuum system. For the experiments, metal foils (Ta, Pcl) and evaporated metal films (Pd) were used. For the foils the following work functions were measured : Ta = (4.3 ± 0.1), e V and P d ~ (4.6 ± 0.15) eV. The value for the work function of the films o f P d : (4.95 ± 0.05) e V. By exposing the film to hydrogen and thereby completely covering the film surface with hydrogen atoms, the work function of P d films is increased by 0.18 eV. For Pet foils the increase of work function is about the same. (Germany) w.J.s. R. Jaeckel and B. Wagner, Vacuum, 13 (12), Dec. 1963, 509-511. 33 170. Thin films for accurate measurement of charged-particle ranges. (U.S.A.) T. L. Watts and C. J. Sncider, Nuc~ar Sci. Abstr., 17 (7),April 1963, 1420. 33 : 41 171. The preparation of thin layers of semiconductors for use in solar converters. (France) The author describes the preparation of thin films of gallium arsenide and cadmium telluride. For use in solar converters, the films must be at least 5t~ thick, This is difficult to realize in the case of gallium arsenide, as it requires a number of successive thin films being deposited, the temperature of the base being gradually increased during the process. Cadmium telluride films do not present this difficulty. They are, however, unsuitable for use in solar converters on account of their high specific resistance. The experiments are being continued. (Algeria) w.z.s. S. Martinuzzi, Le Vide, 18 (106), July/Aug. 1963, 354-362.
33 174. Vacuum tube-transistor stages for economical radiometric apparatus. (U.S.S.R.) B. I. Khazanov, Pribory i Tekh. Eksper., (6), 1962, 70-74. 33 175. The Royal Radar Establishment, Malvern. (Great Britain). Anon., Brit. Commun. & Electron., 10 (10), Oct. 1963, 764-769.
34.
H i g h A l t i t u d e and S p a c e T e c h n o l o g y
34 176. The effects of a simulated space environment on the properties ofelastomers. (U.S.A.) Z. T. Ossefort and J. D. Ruby, Proc. Inst. Environ. Sci., 1961,651661.
177. Boeing high temperature-altitude simulation (U.S.A.) J. C. Stuart, Proc. Inst. Environ. Sci., 1961, 509-519.
178. Operation of a solar space environment simulator. H. Mark, Proc. Inst. Environ, Sci., 1961, 521-531.
(U.S.A.)
34 (U.S.A.)
34 179. Heat flux and solar simulation for space simulators. (U.S.A.) F. Hermann and G. K. Sneden., Proc. Inst. Environ., Sci., 1961, 359-363. 34 180. A high vacuum orbital simulator. ~(U.S.A.) W. G. Camack and C. A. Ellis, Proc. Inst. Environ. Sci., 1961, 349-357. 34 181. Design solution for a space environment simulator. (U.S.A.) J. C. Gelhard and S. W. Meyer, Proc. Inst. Environ. Sci., 1961, 335-347. 34 : 57 182. Tensile testing of materials at high temperatures in a vacuum. (U.S.S.R.) A. N. Kobylkin, ZavodLab., 28 (12), 1962, 1513-1515.
33 : 56 172. First thin-film superconductive electronic memory. Anon., Int. Electronics, 6 (3), Sept. 1963, 23-24.
34 facilities.
183. Simulation of rain environment. (U.S.A.) M . H . Simpson, Proc. Inst. Environ. Sci., 1961, 65-74.
34
See Abstr. No. 144.
33 " 16 173. Stabilization of semiconductor characteristics by vacuum treatment. (France) The concentration of free electrons is much smaller in the case of semiconductors than for metals. Thus copper contains approximately 102z electrons per cc, whilst the corresponding figures for germanium and silicon are 1043 and 101° respectively. As a result, the performance of semiconductors is profoundly affected by surface contamination and in order to ensure stability some form of surface protection or passivation must be adopted. The author describes experiments in which silicon diodes were subjected to ionic oxygen bombardment at low air pressure (10 -4 tort) the accelerating voltage being 10 kV. The treatment resulted in excellent stabilization of reverse current characteristics. (France) w. J, s. J. Bailleul-Langlais, Le Vide, 18 (106), July/Aug. 1963, 347-353.
33:22 Small cheap mass spectrometer.
83
See Abstr. No. 148.
33:22 The elimination of resistive films in hot cathodes ionization gauges. See Abstr. No. 145. 33:22 A versatile 6 in. radius mass spectrometer for isotopic anMysis of solids, liquids or gases. See Abstr. No. 147. 33 : 45 Welding reactor fuel cans by electron bombardment in vacuo. See Abstr. No. 210. 33 : 19 169. Photoelectric measurement of the work function of metals and its alteration after gas adsorption. (Great Britain) Following the procedure originally suggested by R. H. Fowler, the work function of tantalum and palladium was measured photoelectrically in an ultra-high vacuum system. For the experiments, metal foils (Ta, Pcl) and evaporated metal films (Pd) were used. For the foils the following work functions were measured : Ta = (4.3 ± 0.1), e V and P d ~ (4.6 ± 0.15) eV. The value for the work function of the films o f P d : (4.95 ± 0.05) e V. By exposing the film to hydrogen and thereby completely covering the film surface with hydrogen atoms, the work function of P d films is increased by 0.18 eV. For Pet foils the increase of work function is about the same. (Germany) w.J.s. R. Jaeckel and B. Wagner, Vacuum, 13 (12), Dec. 1963, 509-511. 33 170. Thin films for accurate measurement of charged-particle ranges. (U.S.A.) T. L. Watts and C. J. Sncider, Nuc~ar Sci. Abstr., 17 (7),April 1963, 1420. 33 : 41 171. The preparation of thin layers of semiconductors for use in solar converters. (France) The author describes the preparation of thin films of gallium arsenide and cadmium telluride. For use in solar converters, the films must be at least 5t~ thick, This is difficult to realize in the case of gallium arsenide, as it requires a number of successive thin films being deposited, the temperature of the base being gradually increased during the process. Cadmium telluride films do not present this difficulty. They are, however, unsuitable for use in solar converters on account of their high specific resistance. The experiments are being continued. (Algeria) w.z.s. S. Martinuzzi, Le Vide, 18 (106), July/Aug. 1963, 354-362.
33 174. Vacuum tube-transistor stages for economical radiometric apparatus. (U.S.S.R.) B. I. Khazanov, Pribory i Tekh. Eksper., (6), 1962, 70-74. 33 175. The Royal Radar Establishment, Malvern. (Great Britain). Anon., Brit. Commun. & Electron., 10 (10), Oct. 1963, 764-769.
34.
H i g h A l t i t u d e and S p a c e T e c h n o l o g y
34 176. The effects of a simulated space environment on the properties ofelastomers. (U.S.A.) Z. T. Ossefort and J. D. Ruby, Proc. Inst. Environ. Sci., 1961,651661.
177. Boeing high temperature-altitude simulation (U.S.A.) J. C. Stuart, Proc. Inst. Environ. Sci., 1961, 509-519.
178. Operation of a solar space environment simulator. H. Mark, Proc. Inst. Environ, Sci., 1961, 521-531.
(U.S.A.)
34 (U.S.A.)
34 179. Heat flux and solar simulation for space simulators. (U.S.A.) F. Hermann and G. K. Sneden., Proc. Inst. Environ., Sci., 1961, 359-363. 34 180. A high vacuum orbital simulator. ~(U.S.A.) W. G. Camack and C. A. Ellis, Proc. Inst. Environ. Sci., 1961, 349-357. 34 181. Design solution for a space environment simulator. (U.S.A.) J. C. Gelhard and S. W. Meyer, Proc. Inst. Environ. Sci., 1961, 335-347. 34 : 57 182. Tensile testing of materials at high temperatures in a vacuum. (U.S.S.R.) A. N. Kobylkin, ZavodLab., 28 (12), 1962, 1513-1515.
33 : 56 172. First thin-film superconductive electronic memory. Anon., Int. Electronics, 6 (3), Sept. 1963, 23-24.
34 facilities.
183. Simulation of rain environment. (U.S.A.) M . H . Simpson, Proc. Inst. Environ. Sci., 1961, 65-74.
34