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AlGaAs double-heterojunction fet systems
A447 Surface Science 174 (1986) 375-377 North-Holland, Amsterdam PROPERTIES OF AND PROSPECTS HETEROJUNCTION FET
375 FOR THE GaAs GATE
P.M. S O L O M O N I B M T.J. Watson Research Center, Yorktown Heights, New York 10598, USA Received 1 August 1985; accepted for publication 15 September 1985
378
Surface Science 174 (1986) 378-381 North-Holland, Amsterdam
A p-CHANNEL AIGaAs/GaAs MIS-LIKE HETEROSTRUCTURE EMPLOYING TWO-DIMENSIONAL HOLE GAS
FET
K. OE, M. H I R A N O , K. A R A I a n d F. Y A N A G A W A N T T Atsugi Electrical Communication Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan K. T S U B A K I N T T Musashino Electrical Communication Laboratories, 3-9-11, Midoricho, Musashino-shi, Tokyo 180, Japan Received 2 August 1985; accepted for publication 15 September 1985 A p-channel A1GaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductanccs of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 #m gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.
382
Surface Science 174 (1986) 382-386 North-Holland, Amsterdam
SUBBAND STRUCTURES OF HIGH MOBILITY ELECTRONS IN SELECTIVELY-DOPED AIGaAs/GaAs/AIGaAs DOUBLE-HETEROJUNCTION FET SYSTEMS K. I N O U E Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan and H. S A K A K I , J. Y O S H I N O a n d K. H I R A K A W A Institute of Industrial Science, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan Received 3 August 1985; accepted for pubfication 12 September 1985 The variation of subband structures with applied gate voltages in a selectively-doped AIGaAs/ GaAs/A1GaAs double-hegerojunction system has been studied by magnetotransport measurements and self-consistent calculations of electronic states in the system. Good quantitative agreement between the experimental and calculated results is demonstrated.
375 FOR THE GaAs GATE
P.M. S O L O M O N I B M T.J. Watson Research Center, Yorktown Heights, New York 10598, USA Received 1 August 1985; accepted for publication 15 September 1985
378
Surface Science 174 (1986) 378-381 North-Holland, Amsterdam
A p-CHANNEL AIGaAs/GaAs MIS-LIKE HETEROSTRUCTURE EMPLOYING TWO-DIMENSIONAL HOLE GAS
FET
K. OE, M. H I R A N O , K. A R A I a n d F. Y A N A G A W A N T T Atsugi Electrical Communication Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan K. T S U B A K I N T T Musashino Electrical Communication Laboratories, 3-9-11, Midoricho, Musashino-shi, Tokyo 180, Japan Received 2 August 1985; accepted for publication 15 September 1985 A p-channel A1GaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductanccs of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 #m gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.
382
Surface Science 174 (1986) 382-386 North-Holland, Amsterdam
SUBBAND STRUCTURES OF HIGH MOBILITY ELECTRONS IN SELECTIVELY-DOPED AIGaAs/GaAs/AIGaAs DOUBLE-HETEROJUNCTION FET SYSTEMS K. I N O U E Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan and H. S A K A K I , J. Y O S H I N O a n d K. H I R A K A W A Institute of Industrial Science, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan Received 3 August 1985; accepted for pubfication 12 September 1985 The variation of subband structures with applied gate voltages in a selectively-doped AIGaAs/ GaAs/A1GaAs double-hegerojunction system has been studied by magnetotransport measurements and self-consistent calculations of electronic states in the system. Good quantitative agreement between the experimental and calculated results is demonstrated.