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Subject Index of MBE-XV
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Journal of Crystal Growth 311 (2009) 2247–2249
Subject index A. Processes Index A1. Fundamental Aspects Adsorption 2135 Angular distribution modeling 1640 Atomic force microscope 1819 Atomic force microscopy 1754, 1815, 1825, 1839 Capacitance 2232 Carbon 1666 Cathodoluminescence 2172 Characterization 1662, 1711, 1764, 1872, 2128, 2212 Computer simulation 1640, 1908 Coulomb drag 1988 Crystal morphology 2099 Crystal Morphologymorphology 1728 Crystal structures 1847, 2143, 2183, 2191, 2199 Curved semiconducting layer stacks 1680 Defects 1650, 1715 Desorption 2063 Diffusion 1825, 1839, 2021 Dislocations 1684 Doping 1684, 1929, 2039, 2042, 2073, 2139, 2232 Double quantum dot 1791 Droplet 1832 Etching 1984 Eutectics 1855 Free-standing GaN 1997 Funnel-like nano-rods 1997 GaAs surface treatment 1666 Gas injection 1640 Germanium 2187 Growth models 1764, 2016, 2021, 2025, 2063 Heat transfer 2132, 2191 Hetero-interface 1696 High-resolution transmission electron microscopy 2006 High-resolution X-ray diffraction 1929, 2006, 2058, 2010, 2039
Nanorod 2172 Nanostructures 1625, 1761, 1764, 1783, 1787, 1795, 1799, 1832, 1859, 1885, 1984, 2058, 2063, 2073, 2123, 2147, 2220 Nanowire 2172 Nucleation 1819 Oxygen 1666 Phase equilibria 2099 Photoluminescence 1811, 1935, 2029, 2172 Polarization effect 2069 Purification 1655 Quantum dots 1783, 2102 Rapid thermal annealing 1791 Rarefied gas dynamics 1640 Reciprocal space map 1707 Reflection high-energy electron diffraction 1754, 1758, 1807, 2205, 2215, 2227, 2232 RHEED 1994 Rocking curve 1707 Roughening 1876 Scanning tunneling microscopy 2220 Segregation 1876 Self-organized quantum dots 2069 Solubility 2046 Substrates 2058 Superlattices 1901, 1939 Surface processes 1815, 2025, 2096, 2151 Surface structure 1764, 1799, 2049, 2135, 2163, 2205, 2227 Surfaces 2167 Temperature measurement 1676 Temperature uniformity 1676 Transmission electron microscopy 2010 XPS 1994 X-ray diffraction 1688, 1688, 2021, 2025, 2046, 2116, 2179, 2215, 2227 A2. Bulk Crystal Growth Nanomaterials 1803
Impurities 1650, 1655, 1666 Interfaces 1739, 1901, 1950, 2058 Intersubband 1923 Intersubband absorption 2113 Low-dimensional structures 1658, 1680, 1696, 1770, 1774, 1799, 1803, 1807, 1822, 1825, 1828, 1839, 1843, 1859, 1923, 1972, 2099, 2120, 2123, 2160, 2205 Molecular beam epitaxy 2002 doi:10.1016/S0022-0248(09)00347-9
Single crystal growth 2183, 2042 A3. Thin Film/Epitaxial Growth Antimonides 1901 Atomic layer deposition (ALD) 2084 Chemical beam epitaxy 1758, 1822, 1855 Coupled double quantum wells (CDQWs) 1707
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Subject index
Gas-source molecular-beam epitaxy 1703
Gallium Nitride 2010 GaN 2006, 2084, 2183 GeOI/Si 1979
III–V on Si integration 1979
Hafnium oxide 2187
Laser epitaxy 1932
InAs 1819 Indium arsenide 1811 InGaAlAs 1787 InGaAs 1723, 1767, 1832, 1843, 1851 InP 1851, 1979
Droplet epitaxy 1836, 1843
MBE 1863, 2113, 2172 Metalorganic chemical vapor deposition 1997, 2049 MOCVD 2172 Molecular beam epitaxy 1625, 1632, 1646, 1650, 1655, 1658, 1662, 1671, 1676, 1680, 1684, 1688, 1692, 1696, 1700, 1711, 1715, 1728, 1733, 1739, 1745, 1748, 1754, 1761, 1764, 1767, 1770, 1774, 1778, 1783, 1787, 1791, 1799, 1803, 1807, 1811, 1815, 1819, 1825, 1828, 1832, 1839, 1843, 1847, 1851, 1859, 1868, 1872, 1876, 1881, 1885, 1889, 1893, 1897, 1901, 1905, 1908, 1912, 1917, 1920, 1923, 1929, 1935, 1939, 1950, 1954, 1958, 1962, 1972, 1976, 1979, 1984, 1988, 1994, 2006, 2010, 2016, 2021, 2025, 2029, 2033, 2039, 2042, 2046, 2049, 2054, 2058, 2063, 2069, 2073, 2080, 2087, 2091, 2096, 2099, 2102, 2109, 2116, 2120, 2123, 2128, 2132, 2135, 2139, 2143, 2147, 2151, 2155, 2163, 2167, 2176, 2179, 2183, 2191, 2199, 2208, 2212, 2215, 2220, 2224, 2227, 2232 Molecular beam epitaxy (MBE) 2084, 2187, 2195 Nanohole 1843
MgSe 2109 Nanomaterials 1767, 1847, 1885, 2155, 2208 Nanowires 1855 Nitrides 1632, 1646, 1662, 1719, 1733, 1754, 1994, 2002, 2016, 2021, 2025, 2029, 2033, 2039, 2042, 2046, 2049, 2054, 2058, 2063, 2069, 2073, 2080, 2087, 2091 Organic compounds 2227 Oxides 1950, 1958, 2021, 2167, 2176, 2179, 2191, 2195, 2199 Perovskites 2191 Phosphides 1733, 1822, 1932 Quantum rings 1832 Rare-earth compounds 2042, 2191
Quantum dots 1758, 1795, 1819 Quantum wells 1666, 1680, 1696, 1700, 1719, 1723, 1739, 1748, 1868, 1908, 1912, 1935, 2073, 2102, 2160, 2176 RF-plasma molecular beam epitaxy 1997 Selective deposition 1984 Selective epitaxy 1778, 2063, 2087 Self-assembled quantum dots 1811 Semiconducting III–V materials 1684 Semiconducting lead compounds 2102 Semiconducting ternary compounds 2102 Superlattices 1703, 1719, 1739, 1897, 1905, 2143 Surface diffusion 1836
Sc2O3 2006 Semiconducting III–V materials 1843 Semiconducting silicon 2220 Si 1979 SOLES 1979 Tellurites 2096 Zinc compounds 2096 Zinc oxide 2163, 2172 ZnCdMgSe 2109 ZnCdSe 2109 ZnSe 2106
B. Material/Devices Index
B2. Material by Property Class
B1. Material by Type
Chalcogenides 2215 Chalcopyrite Cu(InGa)Se2 2212 Cluster of InAs dots 1836
Al2O3 2084 Alloys 1650, 2224 Aluminum oxide 2187 Antimonides 1688, 1703, 1754, 1847, 1889, 1893, 1897, 1905, 1908, 1912, 1917, 1920, 1972, 1976 Arsenates 1799, 1885, 1932, 1950, 2160 Arsenides 1733, 1920, 1929, 1935 Cadmium compounds 2120, 2224 Calcium compounds 2224 Dilute nitrides 1715, 1723 Fluorides 2224 Fullerenes 2227, 2232 GaAs 1819, 1832, 1863 Gadolinium compounds 2143, 2183 GaInNAs 1723, 1863 Gallium arsenide 1811 Gallium compounds 1655, 1688, 1778, 1847
Dielectric materials 1954, 2179, 2183 Germanium 2195 High-k dielectrics 1944, 2084, 2187 High-mobility channel semiconductor 1944 II–VI 2113 InAs 1711 InAsSb 1711 InGaAs/AlAsSb 1707 InSb 1711 Magnetic materials 2046, 2132, 2139, 2143, 2147, 2151, 2155, 2160, 2208 MgSe/ZnxCd1 xSe quantum well 2113 Optical properties 1650 Photoluminescence 2102
Subject index Semiconducting gallium arcsenide 1954 Semiconducting gallium arsenide 1658, 1671, 1783, 1803, 1859, 1958, 2232 Semiconducting gallium compounds 1688, 2039 Semiconducting germanium 2147, 2224 Semiconducting II–VI materials 2096, 2099, 2109, 2116, 2120, 2123, 2155, 2176, 2205 Semiconducting III/V materials 1932 Semiconducting III–V materials 1625, 1646, 1662, 1671, 1676, 1680, 1700, 1715, 1728, 1733, 1739, 1748, 1761, 1764, 1770, 1774, 1778, 1783, 1799, 1807, 1815, 1825, 1839, 1859, 1872, 1876, 1881, 1885, 1893, 1917, 1920, 1923, 1939, 1950, 1962, 1984, 2016, 2025, 2033, 2042, 2046, 2080, 2135, 2160 Semiconducting indium arsenide 1795 Semiconducting indium compounds 1688, 1711, 1719, 1889, 1929, 1972, 2073, 2128 Semiconducting indium phosphide 1745, 1822 Semiconducting materials 1692, 2139 Semiconducting quaternary alloys 1908, 2099 Semiconducting ternary compounds 1688, 1976 Semiconduction III–V materials 1696 Semiconduction indium compounds 1696 Semiconduction ternary compounds 1696 Semiconductor III–V materials 1828, 1868, 1905 Stress relaxation 2002
Heterojunction bipolar transistors 1671 Heterojunction semiconductor devices 1984, 1893, 2155, 2176 High electron mobility transistors 1962, 1671, 1972, 1976, 2002, 2091
B3. Devices
Quantum cascade lasers 1923
1.3 mm edge emitting laser 1863
Semiconductor devices 1897 Semiconductor lasers 1868 Single electron transistors 1795 Solar cells 1876, 1885, 2116, 2212 Solid state lasers 1920, 1923, 2120
Electron–hole bilayer devices 1988 Entangled photon emitters 1811 Field effect transistors 1950, 1954, 1958, 1984, 2087 Field effects transistors 2195
III-V Compound semiconductor MOSFET 1944 Infrared detector 1897 Infrared devices 1881, 1889, 1893, 1901, 1908, 1917, 1920, 1932, 1939, 2109 Infrared photodetectors 1703 InP-HBT 1979 Laser diodes 1625, 1632, 1715, 1905, 1908, 1912, 1932, 1939, 2120 Laser dioses 1646 Light-emitting diodes 1748, 1872, 2080 Metal-oxide-semiconductor capacitors (MOSCAP) 2187 Nonlinear optical 1807 Optical fiber devices 1646 Patterned backgate 1988 Phase change memory 2215
Rapid thermal annealing 1723
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Journal of Crystal Growth 311 (2009) 2247–2249
Subject index A. Processes Index A1. Fundamental Aspects Adsorption 2135 Angular distribution modeling 1640 Atomic force microscope 1819 Atomic force microscopy 1754, 1815, 1825, 1839 Capacitance 2232 Carbon 1666 Cathodoluminescence 2172 Characterization 1662, 1711, 1764, 1872, 2128, 2212 Computer simulation 1640, 1908 Coulomb drag 1988 Crystal morphology 2099 Crystal Morphologymorphology 1728 Crystal structures 1847, 2143, 2183, 2191, 2199 Curved semiconducting layer stacks 1680 Defects 1650, 1715 Desorption 2063 Diffusion 1825, 1839, 2021 Dislocations 1684 Doping 1684, 1929, 2039, 2042, 2073, 2139, 2232 Double quantum dot 1791 Droplet 1832 Etching 1984 Eutectics 1855 Free-standing GaN 1997 Funnel-like nano-rods 1997 GaAs surface treatment 1666 Gas injection 1640 Germanium 2187 Growth models 1764, 2016, 2021, 2025, 2063 Heat transfer 2132, 2191 Hetero-interface 1696 High-resolution transmission electron microscopy 2006 High-resolution X-ray diffraction 1929, 2006, 2058, 2010, 2039
Nanorod 2172 Nanostructures 1625, 1761, 1764, 1783, 1787, 1795, 1799, 1832, 1859, 1885, 1984, 2058, 2063, 2073, 2123, 2147, 2220 Nanowire 2172 Nucleation 1819 Oxygen 1666 Phase equilibria 2099 Photoluminescence 1811, 1935, 2029, 2172 Polarization effect 2069 Purification 1655 Quantum dots 1783, 2102 Rapid thermal annealing 1791 Rarefied gas dynamics 1640 Reciprocal space map 1707 Reflection high-energy electron diffraction 1754, 1758, 1807, 2205, 2215, 2227, 2232 RHEED 1994 Rocking curve 1707 Roughening 1876 Scanning tunneling microscopy 2220 Segregation 1876 Self-organized quantum dots 2069 Solubility 2046 Substrates 2058 Superlattices 1901, 1939 Surface processes 1815, 2025, 2096, 2151 Surface structure 1764, 1799, 2049, 2135, 2163, 2205, 2227 Surfaces 2167 Temperature measurement 1676 Temperature uniformity 1676 Transmission electron microscopy 2010 XPS 1994 X-ray diffraction 1688, 1688, 2021, 2025, 2046, 2116, 2179, 2215, 2227 A2. Bulk Crystal Growth Nanomaterials 1803
Impurities 1650, 1655, 1666 Interfaces 1739, 1901, 1950, 2058 Intersubband 1923 Intersubband absorption 2113 Low-dimensional structures 1658, 1680, 1696, 1770, 1774, 1799, 1803, 1807, 1822, 1825, 1828, 1839, 1843, 1859, 1923, 1972, 2099, 2120, 2123, 2160, 2205 Molecular beam epitaxy 2002 doi:10.1016/S0022-0248(09)00347-9
Single crystal growth 2183, 2042 A3. Thin Film/Epitaxial Growth Antimonides 1901 Atomic layer deposition (ALD) 2084 Chemical beam epitaxy 1758, 1822, 1855 Coupled double quantum wells (CDQWs) 1707
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Subject index
Gas-source molecular-beam epitaxy 1703
Gallium Nitride 2010 GaN 2006, 2084, 2183 GeOI/Si 1979
III–V on Si integration 1979
Hafnium oxide 2187
Laser epitaxy 1932
InAs 1819 Indium arsenide 1811 InGaAlAs 1787 InGaAs 1723, 1767, 1832, 1843, 1851 InP 1851, 1979
Droplet epitaxy 1836, 1843
MBE 1863, 2113, 2172 Metalorganic chemical vapor deposition 1997, 2049 MOCVD 2172 Molecular beam epitaxy 1625, 1632, 1646, 1650, 1655, 1658, 1662, 1671, 1676, 1680, 1684, 1688, 1692, 1696, 1700, 1711, 1715, 1728, 1733, 1739, 1745, 1748, 1754, 1761, 1764, 1767, 1770, 1774, 1778, 1783, 1787, 1791, 1799, 1803, 1807, 1811, 1815, 1819, 1825, 1828, 1832, 1839, 1843, 1847, 1851, 1859, 1868, 1872, 1876, 1881, 1885, 1889, 1893, 1897, 1901, 1905, 1908, 1912, 1917, 1920, 1923, 1929, 1935, 1939, 1950, 1954, 1958, 1962, 1972, 1976, 1979, 1984, 1988, 1994, 2006, 2010, 2016, 2021, 2025, 2029, 2033, 2039, 2042, 2046, 2049, 2054, 2058, 2063, 2069, 2073, 2080, 2087, 2091, 2096, 2099, 2102, 2109, 2116, 2120, 2123, 2128, 2132, 2135, 2139, 2143, 2147, 2151, 2155, 2163, 2167, 2176, 2179, 2183, 2191, 2199, 2208, 2212, 2215, 2220, 2224, 2227, 2232 Molecular beam epitaxy (MBE) 2084, 2187, 2195 Nanohole 1843
MgSe 2109 Nanomaterials 1767, 1847, 1885, 2155, 2208 Nanowires 1855 Nitrides 1632, 1646, 1662, 1719, 1733, 1754, 1994, 2002, 2016, 2021, 2025, 2029, 2033, 2039, 2042, 2046, 2049, 2054, 2058, 2063, 2069, 2073, 2080, 2087, 2091 Organic compounds 2227 Oxides 1950, 1958, 2021, 2167, 2176, 2179, 2191, 2195, 2199 Perovskites 2191 Phosphides 1733, 1822, 1932 Quantum rings 1832 Rare-earth compounds 2042, 2191
Quantum dots 1758, 1795, 1819 Quantum wells 1666, 1680, 1696, 1700, 1719, 1723, 1739, 1748, 1868, 1908, 1912, 1935, 2073, 2102, 2160, 2176 RF-plasma molecular beam epitaxy 1997 Selective deposition 1984 Selective epitaxy 1778, 2063, 2087 Self-assembled quantum dots 1811 Semiconducting III–V materials 1684 Semiconducting lead compounds 2102 Semiconducting ternary compounds 2102 Superlattices 1703, 1719, 1739, 1897, 1905, 2143 Surface diffusion 1836
Sc2O3 2006 Semiconducting III–V materials 1843 Semiconducting silicon 2220 Si 1979 SOLES 1979 Tellurites 2096 Zinc compounds 2096 Zinc oxide 2163, 2172 ZnCdMgSe 2109 ZnCdSe 2109 ZnSe 2106
B. Material/Devices Index
B2. Material by Property Class
B1. Material by Type
Chalcogenides 2215 Chalcopyrite Cu(InGa)Se2 2212 Cluster of InAs dots 1836
Al2O3 2084 Alloys 1650, 2224 Aluminum oxide 2187 Antimonides 1688, 1703, 1754, 1847, 1889, 1893, 1897, 1905, 1908, 1912, 1917, 1920, 1972, 1976 Arsenates 1799, 1885, 1932, 1950, 2160 Arsenides 1733, 1920, 1929, 1935 Cadmium compounds 2120, 2224 Calcium compounds 2224 Dilute nitrides 1715, 1723 Fluorides 2224 Fullerenes 2227, 2232 GaAs 1819, 1832, 1863 Gadolinium compounds 2143, 2183 GaInNAs 1723, 1863 Gallium arsenide 1811 Gallium compounds 1655, 1688, 1778, 1847
Dielectric materials 1954, 2179, 2183 Germanium 2195 High-k dielectrics 1944, 2084, 2187 High-mobility channel semiconductor 1944 II–VI 2113 InAs 1711 InAsSb 1711 InGaAs/AlAsSb 1707 InSb 1711 Magnetic materials 2046, 2132, 2139, 2143, 2147, 2151, 2155, 2160, 2208 MgSe/ZnxCd1 xSe quantum well 2113 Optical properties 1650 Photoluminescence 2102
Subject index Semiconducting gallium arcsenide 1954 Semiconducting gallium arsenide 1658, 1671, 1783, 1803, 1859, 1958, 2232 Semiconducting gallium compounds 1688, 2039 Semiconducting germanium 2147, 2224 Semiconducting II–VI materials 2096, 2099, 2109, 2116, 2120, 2123, 2155, 2176, 2205 Semiconducting III/V materials 1932 Semiconducting III–V materials 1625, 1646, 1662, 1671, 1676, 1680, 1700, 1715, 1728, 1733, 1739, 1748, 1761, 1764, 1770, 1774, 1778, 1783, 1799, 1807, 1815, 1825, 1839, 1859, 1872, 1876, 1881, 1885, 1893, 1917, 1920, 1923, 1939, 1950, 1962, 1984, 2016, 2025, 2033, 2042, 2046, 2080, 2135, 2160 Semiconducting indium arsenide 1795 Semiconducting indium compounds 1688, 1711, 1719, 1889, 1929, 1972, 2073, 2128 Semiconducting indium phosphide 1745, 1822 Semiconducting materials 1692, 2139 Semiconducting quaternary alloys 1908, 2099 Semiconducting ternary compounds 1688, 1976 Semiconduction III–V materials 1696 Semiconduction indium compounds 1696 Semiconduction ternary compounds 1696 Semiconductor III–V materials 1828, 1868, 1905 Stress relaxation 2002
Heterojunction bipolar transistors 1671 Heterojunction semiconductor devices 1984, 1893, 2155, 2176 High electron mobility transistors 1962, 1671, 1972, 1976, 2002, 2091
B3. Devices
Quantum cascade lasers 1923
1.3 mm edge emitting laser 1863
Semiconductor devices 1897 Semiconductor lasers 1868 Single electron transistors 1795 Solar cells 1876, 1885, 2116, 2212 Solid state lasers 1920, 1923, 2120
Electron–hole bilayer devices 1988 Entangled photon emitters 1811 Field effect transistors 1950, 1954, 1958, 1984, 2087 Field effects transistors 2195
III-V Compound semiconductor MOSFET 1944 Infrared detector 1897 Infrared devices 1881, 1889, 1893, 1901, 1908, 1917, 1920, 1932, 1939, 2109 Infrared photodetectors 1703 InP-HBT 1979 Laser diodes 1625, 1632, 1715, 1905, 1908, 1912, 1932, 1939, 2120 Laser dioses 1646 Light-emitting diodes 1748, 1872, 2080 Metal-oxide-semiconductor capacitors (MOSCAP) 2187 Nonlinear optical 1807 Optical fiber devices 1646 Patterned backgate 1988 Phase change memory 2215
Rapid thermal annealing 1723
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