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Surface acoustic wave memory using semiconductor laser
MI,CR,OELEC'TR'.ONICS World Abstracts Papers published in 1975-1978 which are considered to be of technical merit will be abstracted by Charles E. Jowett and published in this, and subsequent issues of Microelectronics Journal. Abstracts in this issue comprise papers published in 1977. They are classified under the following headings: Integrated Circuit Technology Memories Microprocessors Optoelectronics Hybrids Discrete Devices Charged Coupled Devices Materials Production and Processing Testing Applications It is the intention, in successive issues of the Journal, to bring the paper abstracts up-to-date, presenting the reader with an easy refeence to many of the important papers which have been published in journals throughout the world.
1.
I n t e g r a t e d Circuit T e c h n o l o g y 1.1
Bipolar
Invited: I 2 L - efficient bipolar LSI extension H. H. B E R G E R Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;JapaneseJournalofApplied Physics, 16, Supplement 16-1, pp.121-128 (1977). By describing the evolution that lead to the invention of Merged Transistor Logic, MTL (=Integrated Injection Logic, I2L) in the IBM Laboratory, Boeblingen/Germany, it is underscored that I2L/MTL is not a new technology, but an extension of existing bipolar technology into LSI. A comparison of I2L/MTL with the n-MOS LSI contender shows considerable advantages of I2L mainly in power x delay (= 10 x), speed ( = 2 . . . 4 x), and versatility (circuit mix, driving capability). From these features a very wide application spectrum results, reaching from consumer products to computers. Furthermore, a steady improvement of I2L has been observed. This includes circuit extensions, e.g. by Schottky diodes that lead MTL into the speed range of present TTL circuits. Invited: vertical injection logic - an improved structure of integrated injection logic T. NAKANO, Y. HORIBA., K. KIJIMA, K. TANAKA and O. TOMISAWA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;JapaneseJournalofApplied Physics, 16, Supplement 16-1, pp.129-134 (1977).
Vertical injection logic (VIL), an improved structure of integrated injection logic (I2L) with the vertical pnp injector, has shown the better electrical performances. The current gain of the pnp transistor has been increased to 0.7-1.0 in comparison with 0.4-0.5 of usualone : and this higher ~ in VIL has contributed to improve the power-delay product in the extrinsic region. The intrinsic delay time was also improved by the action of the bottom injector. The experimental results showed the minimum delay time of 6.5ns and power-delay product of 0.07pJ for VIL compared to 10.5ns and 0.2pJ for standard 2L. The capability of the very low power-delay product was examined with the wristwatch IC and the low propagation delay time was applied to the static RAM. Phosphorous buried emitter 12L for high-voltage operating circuits T. WATANABE, T. OKABE and M. NAGATA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.143-146 (1977). Phosphorous buried emitter I2L has realised co-operation of I2-L circuits and high-voltage operating bipolar circuits on a same LSI chip. Breakdown voltages ofnpn transistors are much improved, where I2L circuits operate successfully. Phosphorous buried n + layers are introduced to obtain highly up-diffused buried emitters for I2Ls. npn transistors exhibit high breakdown voltages of 22V in BVeEo and 58V in BVcBO. 12Ls operate with 0.3pJ/gate in power-delay-products and 20us/gate in minimum delay time.
2.
Memories
Surface acoustic wave memory using semiconductor laser S. T A K A D A , K. HOH, H. HAYAKAWA and Y. TOKUMARU Proceedings of the 8th Conference (1976 International) on Solid
MICROELECTRONICS JOURNALVol. 10 No. 1 © 1979 Mackintosh Publications Ltd., Luton.
63
World Abstractscontinued from page 63
State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-I, pp.501-505 (1977). A new method for storing both phase and amplitude of surface wave signals with large bandwidth in silicon surface states by a short light pulse emitted from GaAs laser diode is presented. 87MHz surface wave signals are stored by using a light pulse with a duration of 0.5ns and the stored signals are read out as a correlation output signal at a delayed time after storage. Pulse compression experiments are also demonstrated by storing a linear FM chirp signal with this method.
Bias field margin degradation due to long-term memory operation in 16kblt bubble memory chips N. Y A M A G U C H I Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.334-350 (1977). This paper describes the electrically observed failure behaviour, dependence of the mean time to failure (MTrF) on the replicatorannihilator current pulse parameters, such as amplitudes, timings and durations, and qualitative failure analysis for 16kbit major-minor chip. The control pulse parameters are adjusted to provide the longest M T I ' F near the bias field margin threshold whee the MTI'F is the most effective factor for data longevity, as pointed out by Shumate et aL I The bias field margin degradation of the - 0 . 2 0 e / d e c a d e is obtained. All the control function parameters are adjusted to provide the longest MTTF. Error-free memory operations in excess of 60 days and an error rate of less than 7 x 10-12/read were demonstrated for both startstop and sequential read-restored test.
3.
Microprocessors
High-performance microprocessor architectures B. P A R A S U R A M A N Proc. IEEE. 64(6), p.851 (June 1976). Over the past few years, microprocessor designs have undergone an evolution process shaped largely by improvements in LSI circuit technology and experiences gained from the very large user community. By and large, most microprocessors have internal architectures that are patterned after classical CPU structures. This trend is changing rapidly. High-performance LSI microprocessors are emerging at a slow but steady pace, with architectural features borrowed from larger and more powerful computers. This paper examines aspects of pipelined concurrency and microprogramming as applied to LSI microprocessors, for the purpose of enhancing performance.
4.
Optoelectronics
Flat TV panels with polycrystalline layers A. G. FISCHER Microelectronics, 7(4), p.5 (1976). After describing the addressing requirements of thin-film transistor matrices for electroluminescent powder layers and for liquid crystal layers, the preparation and the properties of suitable matrices, and of ae-El powder layers and twisted nematic liquid crystal layers, are reviewed, with many new detailed results. The merits of the various structural designs are compared and the most likely ones highlighted.
Xerographic development of images stored in PLZT FE/PC devices A. K U M A D A , K. YAMASHITA and S. SATO Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.325-328 (1977). The xerographic latent image formed on the FE/PC sandwich device consisting of a transparent PLZT ceramic plate and a photoconductive film was found to have the capability of developing a black an white image by immersing the plate in a liquid toner developer. After the developed image is transferred to a copy sheet, the latent image remains in the same state as before the development process. This produces a multiple printing capable of reproducing many black and white copies transferred over and over again from the same latent image. The latent image can be completely erased by immersing the plate in hot water when no longer needed. It can, thus, be re-used repeatedly for other images. 64
Given necessary refinements, this technology promises to considerably enhance existing xerographic hardware.
Reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystals V. I. ANISIMKIN and A. I. M O R O Z O V Proceedings of the 8th Conference (1976 International) on Solid Stale Devices, Tokyo, 1976; Japanese Journal of Appfied Physics, 16, Supplement 16-1, pp.527-530 (1977). The reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystalline sample was investigated experimentally. Measurements were carried out in the range of I0-110MHz. The loss due to Gulyaev-Bleustein wave reflection from rectangular end was about ldB and didn't depend on the frequendy. The reflection loss of Rayleigh wave, propagating along the same direction, was also frequency independent, however its value was about 6dB. Experiments showed that Gulyaev-Bleustein wave could circulate around the periphery of the sample which has the curved ends. Four round-trip transists were visible on the oscilloscope in the range of 20-70MHz, representing a total delay time of about 200/xs. The resolution of the different output signals was achieved by means of selective amplification. The device had a narrow bandwidth (--1MHz) at frequencies used. Phase tuning in optical directional coupler O. M1KAMI, J. NODA and Y. OHMACHI Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.321-324 (1977). A new phase tuning method for an optical directional coupler fabricated in a c-plate LiNbO 3 by TiO 2 diffusion is presented. The method consists of applying a bias voltage to an additional electrode placed closely outside one of the modulation electrodes. The propagation constants of the two waveguides could be made equal by a 5V bias voltage without affecting the 8V modulation voltage. Optical image memory in slow surface states in germanium read out by acoustic surface wave T. SHIOSAKI, K. N A R U M I Y A , T. YAMAMOTO and A. K A W A B A T A Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement I6-1, pp.497-500 (1977). A n optical image can be stored in the slow surface states of Ge and can be read out by the separated medium acoustoelectrie effect with a surface wave on LiNbO 3. It is found that the surface is sensitive even to optical power as weak as 0.9p.W/mm 2 at 368nm wavelength. The memory time is considerably long due to the 'slow' property of the surface states, depending on surface treatment so that the more oxidised surface has the longer memory time. The optical image is easily erased by applying a gate voltage for several seconds.
5.
Hybrids
Tantalum thin-fill RC circuit technology for a universal active filter W. W O R O B E Y and J. RUTKEIWICZ IEEE Transactions on Parts, Hybrids, and Packaging, PHP-12, No, 4 (December 1976). This paper describes the physical layout, process sequence, and component properties of a universal active filter designated the standard tantalum active resonator (STAR). This active-filter building block was rcalised as a hybrid integrated circuit (HIC) using tantalum thin-film technology. Several different circuit configurations are possible using only one set of process photomasks and one HIC. This can be accomplished by a wide range of precise resistor values through the use of laser trimming and various interconnecting schemes for the components on the HIC via the printed wiring board. The STAR circuit is comprised of nine laser-adjustable tantalum thin-film resistors totalling a maximum of 1MI), two 5100-pF tantalum capacitors, and one operational amplifier. The capacitors are formed by anodising tantalum to 190V and depositing NiCr-Pd-Au as the adherent counterelectrode. The resistors are made from 300-[~/I--I
1.
I n t e g r a t e d Circuit T e c h n o l o g y 1.1
Bipolar
Invited: I 2 L - efficient bipolar LSI extension H. H. B E R G E R Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;JapaneseJournalofApplied Physics, 16, Supplement 16-1, pp.121-128 (1977). By describing the evolution that lead to the invention of Merged Transistor Logic, MTL (=Integrated Injection Logic, I2L) in the IBM Laboratory, Boeblingen/Germany, it is underscored that I2L/MTL is not a new technology, but an extension of existing bipolar technology into LSI. A comparison of I2L/MTL with the n-MOS LSI contender shows considerable advantages of I2L mainly in power x delay (= 10 x), speed ( = 2 . . . 4 x), and versatility (circuit mix, driving capability). From these features a very wide application spectrum results, reaching from consumer products to computers. Furthermore, a steady improvement of I2L has been observed. This includes circuit extensions, e.g. by Schottky diodes that lead MTL into the speed range of present TTL circuits. Invited: vertical injection logic - an improved structure of integrated injection logic T. NAKANO, Y. HORIBA., K. KIJIMA, K. TANAKA and O. TOMISAWA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;JapaneseJournalofApplied Physics, 16, Supplement 16-1, pp.129-134 (1977).
Vertical injection logic (VIL), an improved structure of integrated injection logic (I2L) with the vertical pnp injector, has shown the better electrical performances. The current gain of the pnp transistor has been increased to 0.7-1.0 in comparison with 0.4-0.5 of usualone : and this higher ~ in VIL has contributed to improve the power-delay product in the extrinsic region. The intrinsic delay time was also improved by the action of the bottom injector. The experimental results showed the minimum delay time of 6.5ns and power-delay product of 0.07pJ for VIL compared to 10.5ns and 0.2pJ for standard 2L. The capability of the very low power-delay product was examined with the wristwatch IC and the low propagation delay time was applied to the static RAM. Phosphorous buried emitter 12L for high-voltage operating circuits T. WATANABE, T. OKABE and M. NAGATA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.143-146 (1977). Phosphorous buried emitter I2L has realised co-operation of I2-L circuits and high-voltage operating bipolar circuits on a same LSI chip. Breakdown voltages ofnpn transistors are much improved, where I2L circuits operate successfully. Phosphorous buried n + layers are introduced to obtain highly up-diffused buried emitters for I2Ls. npn transistors exhibit high breakdown voltages of 22V in BVeEo and 58V in BVcBO. 12Ls operate with 0.3pJ/gate in power-delay-products and 20us/gate in minimum delay time.
2.
Memories
Surface acoustic wave memory using semiconductor laser S. T A K A D A , K. HOH, H. HAYAKAWA and Y. TOKUMARU Proceedings of the 8th Conference (1976 International) on Solid
MICROELECTRONICS JOURNALVol. 10 No. 1 © 1979 Mackintosh Publications Ltd., Luton.
63
World Abstractscontinued from page 63
State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-I, pp.501-505 (1977). A new method for storing both phase and amplitude of surface wave signals with large bandwidth in silicon surface states by a short light pulse emitted from GaAs laser diode is presented. 87MHz surface wave signals are stored by using a light pulse with a duration of 0.5ns and the stored signals are read out as a correlation output signal at a delayed time after storage. Pulse compression experiments are also demonstrated by storing a linear FM chirp signal with this method.
Bias field margin degradation due to long-term memory operation in 16kblt bubble memory chips N. Y A M A G U C H I Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.334-350 (1977). This paper describes the electrically observed failure behaviour, dependence of the mean time to failure (MTrF) on the replicatorannihilator current pulse parameters, such as amplitudes, timings and durations, and qualitative failure analysis for 16kbit major-minor chip. The control pulse parameters are adjusted to provide the longest M T I ' F near the bias field margin threshold whee the MTI'F is the most effective factor for data longevity, as pointed out by Shumate et aL I The bias field margin degradation of the - 0 . 2 0 e / d e c a d e is obtained. All the control function parameters are adjusted to provide the longest MTTF. Error-free memory operations in excess of 60 days and an error rate of less than 7 x 10-12/read were demonstrated for both startstop and sequential read-restored test.
3.
Microprocessors
High-performance microprocessor architectures B. P A R A S U R A M A N Proc. IEEE. 64(6), p.851 (June 1976). Over the past few years, microprocessor designs have undergone an evolution process shaped largely by improvements in LSI circuit technology and experiences gained from the very large user community. By and large, most microprocessors have internal architectures that are patterned after classical CPU structures. This trend is changing rapidly. High-performance LSI microprocessors are emerging at a slow but steady pace, with architectural features borrowed from larger and more powerful computers. This paper examines aspects of pipelined concurrency and microprogramming as applied to LSI microprocessors, for the purpose of enhancing performance.
4.
Optoelectronics
Flat TV panels with polycrystalline layers A. G. FISCHER Microelectronics, 7(4), p.5 (1976). After describing the addressing requirements of thin-film transistor matrices for electroluminescent powder layers and for liquid crystal layers, the preparation and the properties of suitable matrices, and of ae-El powder layers and twisted nematic liquid crystal layers, are reviewed, with many new detailed results. The merits of the various structural designs are compared and the most likely ones highlighted.
Xerographic development of images stored in PLZT FE/PC devices A. K U M A D A , K. YAMASHITA and S. SATO Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.325-328 (1977). The xerographic latent image formed on the FE/PC sandwich device consisting of a transparent PLZT ceramic plate and a photoconductive film was found to have the capability of developing a black an white image by immersing the plate in a liquid toner developer. After the developed image is transferred to a copy sheet, the latent image remains in the same state as before the development process. This produces a multiple printing capable of reproducing many black and white copies transferred over and over again from the same latent image. The latent image can be completely erased by immersing the plate in hot water when no longer needed. It can, thus, be re-used repeatedly for other images. 64
Given necessary refinements, this technology promises to considerably enhance existing xerographic hardware.
Reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystals V. I. ANISIMKIN and A. I. M O R O Z O V Proceedings of the 8th Conference (1976 International) on Solid Stale Devices, Tokyo, 1976; Japanese Journal of Appfied Physics, 16, Supplement 16-1, pp.527-530 (1977). The reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystalline sample was investigated experimentally. Measurements were carried out in the range of I0-110MHz. The loss due to Gulyaev-Bleustein wave reflection from rectangular end was about ldB and didn't depend on the frequendy. The reflection loss of Rayleigh wave, propagating along the same direction, was also frequency independent, however its value was about 6dB. Experiments showed that Gulyaev-Bleustein wave could circulate around the periphery of the sample which has the curved ends. Four round-trip transists were visible on the oscilloscope in the range of 20-70MHz, representing a total delay time of about 200/xs. The resolution of the different output signals was achieved by means of selective amplification. The device had a narrow bandwidth (--1MHz) at frequencies used. Phase tuning in optical directional coupler O. M1KAMI, J. NODA and Y. OHMACHI Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.321-324 (1977). A new phase tuning method for an optical directional coupler fabricated in a c-plate LiNbO 3 by TiO 2 diffusion is presented. The method consists of applying a bias voltage to an additional electrode placed closely outside one of the modulation electrodes. The propagation constants of the two waveguides could be made equal by a 5V bias voltage without affecting the 8V modulation voltage. Optical image memory in slow surface states in germanium read out by acoustic surface wave T. SHIOSAKI, K. N A R U M I Y A , T. YAMAMOTO and A. K A W A B A T A Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement I6-1, pp.497-500 (1977). A n optical image can be stored in the slow surface states of Ge and can be read out by the separated medium acoustoelectrie effect with a surface wave on LiNbO 3. It is found that the surface is sensitive even to optical power as weak as 0.9p.W/mm 2 at 368nm wavelength. The memory time is considerably long due to the 'slow' property of the surface states, depending on surface treatment so that the more oxidised surface has the longer memory time. The optical image is easily erased by applying a gate voltage for several seconds.
5.
Hybrids
Tantalum thin-fill RC circuit technology for a universal active filter W. W O R O B E Y and J. RUTKEIWICZ IEEE Transactions on Parts, Hybrids, and Packaging, PHP-12, No, 4 (December 1976). This paper describes the physical layout, process sequence, and component properties of a universal active filter designated the standard tantalum active resonator (STAR). This active-filter building block was rcalised as a hybrid integrated circuit (HIC) using tantalum thin-film technology. Several different circuit configurations are possible using only one set of process photomasks and one HIC. This can be accomplished by a wide range of precise resistor values through the use of laser trimming and various interconnecting schemes for the components on the HIC via the printed wiring board. The STAR circuit is comprised of nine laser-adjustable tantalum thin-film resistors totalling a maximum of 1MI), two 5100-pF tantalum capacitors, and one operational amplifier. The capacitors are formed by anodising tantalum to 190V and depositing NiCr-Pd-Au as the adherent counterelectrode. The resistors are made from 300-[~/I--I