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Synthesis and high-performance electromagnetic wave absorption of SiC@C composites
Materials Letters 209 (2017) 90–93
Contents lists available at ScienceDirect
Materials Letters journal homepage: www.elsevier.com/locate/mlblue
Synthesis and high-performance electromagnetic wave absorption of SiC@C composites Yanhui Hou, Huili Yuan, Xiaolu Qu, Hang Chen, Liangchao Li ⇑ Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Department of Chemistry, Zhejiang Normal University, Jinhua 321004, China
a r t i c l e
i n f o
Article history: Received 5 May 2017 Received in revised form 10 July 2017 Accepted 26 July 2017 Available online 27 July 2017 Keywords: SiC@C Composite Electromagnetic wave absorption Carbothermal reduction
a b s t r a c t A kind of simple binary composites of SiC@C were prepared via high temperature carbothermal reduction method, and their structure, composition and electromagnetic property were characterized. Results showed that the SC-2 composite was optimal and the RLmin was up to 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and the effective bandwidth (RL 10 dB) covered the whole frequency range of 10–18 GHz. In addition, the thickness, RLmin and effective bandwidth of absorber can be controlled just by changing the carbon content of composites, which makes the composites rather promising application in electromagnetic wave absorption field. Ó 2017 Elsevier B.V. All rights reserved.
1. Introduction
2. Experimental
In the modern, environmental pollution has become more and more diverse, not only includes the visible pollution such as air pollution and water pollution, but also contains the invisible pollution such as ubiquitous electromagnetic radiation (EMR) [1,2]. An electromagnetic wave (EMW) absorber is a kind of material that can decrease the reflection of incident EMW and absorb it effectively [3]. Among the varieties of EMW absorbers, SiC has become a very promising member for its good combinations of electromagnetic wave absorption and mechanical properties including hardness, wear resistance and high temperature resistance [4–6]. It has been reported that the carbon materials with excellent electrical conductivity, low density, high heat conductivity and low thermal expansion are appropriate for broadband and high-performance EMW absorbers [7–10]. Wen’s group has prepared a kind of SiC composite based on carbon materials, and its minimum RL can reach 47 dB at 2.97 mm [11]. As a result, the introduction of carbon materials with excellent wave-transmissivity is an effective way for improving EMW absorbing of SiC. What’s more, the hollow structure of absorbers can make the entered EMW multiple reflections to further enhance EMW absorbing. Based on this idea, a kind of binary composites of SiC@C with the inner hollow structure were prepared and believed that the composites had excellent absorption on EMW.
The colloidal SiO2 nanospheres were synthesized according to our previous work [12]. Briefly, 90 mL of 2-propanol, 9 mL of ethanol and 7.2 mL of deionized water were mixed and stirred (250 r/min) for 10 min. Then 12 mL of Tetraethyl silicate (TEOS) was added and stirred (250 r/min) for 20 min. Followed by adding 10 mL of NH3H2O (28 wt%), the mixture was stirred continuously for 8 h at 35 °C. The SiO2 nanospheres collected by centrifugation were washed several times with deionized water and ethanol, respectively. The above SiO2 powder (1 g) and glucose were dispersed in 150 mL of deionized water and sonicated for 15 min. Subsequently, the precursor solution was transferred into polyhenylene-lined stainless autoclave and heated at 180 °C for 12 h. After being cooled, the obtained solid products were washed separately 3 times with deionized water and ethanol, and dried to constant weight at 60 °C. Then, the SiO2@SiC@C was obtained after being calcined continuously at 900 °C for 1 h and 1500 °C for 2 h under Ar. Finally, The hollow SiC@C were gained by etching SiO2@SiC@C using HF solution (40 wt%) and designated as SC-1, SC-2, SC-3 and SC-4 corresponding to mass of glucose (0.5 g, 1.0 g, 2.0 g, 4.0 g).
⇑ Corresponding author. E-mail address: [email protected] (L. Li). http://dx.doi.org/10.1016/j.matlet.2017.07.114 0167-577X/Ó 2017 Elsevier B.V. All rights reserved.
3. Results and discussion Fig. 1 shows the schematic of the process for the preparation of SiC@C, which can be prepared just by three-step. First, the SiO2 nanospheres are coated by C6H12O6 via hydrothermal method [13]. Second, the SiO2@C nanospheres are calcined at 900 °C for
Y. Hou et al. / Materials Letters 209 (2017) 90–93
91
Fig. 1. Schematic of the process for the preparation of hollow SiC@C.
1 h to carbonize and 1500 °C for 2 h to generate SiC under Ar [14,15]. Third, the inner SiO2 of obtained SiO2@SiC@C is etched fully by HF solution to get hollow SiC@C. The SEM images of SiO2 nanospheres are shown in Fig. 2a and b. It can be seen that the size of SiO2 nanospheres is about 400 nm. After calcined, the inner SiO2 still keeps the good spherical morphology and SiC is generated partly between SiO2 and C (Fig. 2c). It can be found from Fig. 2d that the inner SiO2 is etched completely, indicating that SiC@C composites with inner hollow structure have been prepared. The XRD patterns of pure SiC and SiC@C composite are presented in Fig. 3. And it can be seen that the four clear peaks located at 35.5°, 41.2°, 59.8° and 71.7 °Correspond to the (1 1 1), (2 0 0), (2 2 0) and (3 1 1) crystal face of b-SiC (ICDD 00-029-1129), respectively [16]. In addition, the peaks of 26.0° and 42.4° are ascribed to the characteristic peak of amorphous carbon [17]. It’s worth noting that the characteristic peak (21.5°) of SiO2 is not observed in Fig. 3b, suggesting that inner SiO2 have been etched completely [19]. The absorbing properties of materials on EMW can be defined by the reflection loss (RL), which can be deduced from the following equation:
Z in Z 0 RL ¼ 20 log Z in þ Z 0 rffiffiffiffiffi Z in ¼ Z 0
ð1Þ
pffiffiffiffiffiffiffiffiffi lr 2p fd lr er tanh j er c
ð2Þ
Where Zin and Z0 is the input impedance and free impedance, f is the microwave frequency, c is the light velocity, d is the thickness of absorber, er (er = e0r je00r ) and lr = 1 [18]. Electric matching property, i.e. the Zin of absorber should be close to Z0, is an essential prerequisite for the excellent absorbers.
Fig. 3. XRD patterns of pure SiC (a) and SiC@C (b).
When EMW contacts the surface of absorber, there are three possible modes: a part of EMW can be absorbed by the surface absorber; some EMW can enter into the inner of absorber and be attenuated; and the rest of EMW is reflected on the surface of absorber [19]. Complex permittivity (e0 and e00 shown in Fig. 4a and b) is one of important EM parameters used to characterize the EMW absorption performance of absorber. Through regulating and optimizing the EMW parameters of the material, it can make incident EMW absorbed at the greatest extent. From the point of medium absorbing EMW, it is better for e00 to become larger on the basis of large e0 . Generally speaking, dielectric tangent loss (tan de = e00 /e0 shown in Fig. 4c) is usually used to represent the loss capacity of EMW energy [20,21]. The reflection loss (RL) of the composites with different thickness is shown in Fig. 5. As can be seen from Fig. 5a, the RLmin of SC-1 with the thickness of 4.7 mm on EMW is 49 dB, and no absorption at all at the thickness of 1.5 mm. Compared with SC1, the RLmin of the other composites (SC-2, SC-3 and SC-4) has a decreasing trend with the increasing of content of carbon. The
Fig. 2. SEM images of SiO2 (a, b), SiO2@SiC@C (c) and SiC@C (d).
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Fig. 4. The real e0 (a) and imaginary e00 (b) of the complex permittivity and dielectric loss tan de (c) of SC-2.
Fig. 5. Three-dimensional presentations of the reflection loss of the composites (a) SC-1, (b) SC-2, (c) SC-3 and (d) SC-4 at different thicknesses on EMW.
RLmin of SC-2 is 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and its effective bandwidth is about 8 GHz (Fig. 5b). The RLmin of SC-3 is 43.3 dB at the thickness of 1.6 mm and its effective bandwidth is 3.6 GHz (Fig. 5c), and 29.3 dB at the thickness of 1.5 mm.
When the mass of C6H12O6 increases to 2.0 g (SC-4), the RLmin is close to 30 dB with the thickness of 2.2 mm and little absorption at the thickness of 1.5 mm (Fig. 5d). With the wide use of electronic products, the wave-absorbing materials with the properties of
Y. Hou et al. / Materials Letters 209 (2017) 90–93
strong absorption, broadband, lightweight and thin will play an important role in the future [21]. Therefore, considering the RLmin, thickness of absorber and effective bandwidth, the SC-2 composite is optimal, owing to excellent electric matching property, i.e. the Zin of SC-2 is quite close to Z0. 4. Conclusion In this work, a kind of simple binary composites of SiC@C were successfully prepared via high temperature carbothermal reduction method. Among, the SC-2 composite is optimal and the RLmin reaches 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and its effective bandwidth covers the whole frequency range of 10– 18 GHz. Therefore, it is believed that the SiC@C composites will be a good candidate for EMW absorption with high-performance absorption, low thickness and wide effective bandwidth. Conflict of interest The authors declare that they have no conflict of interest. Acknowledgments This work was supported by the National Natural Science Foundation of China (20104017). References [1] Z.H. Zeng, H. Jin, M.J. Chen, W.W. Li, L.C. Zhou, Z. Zhong, Adv. Funct. Mater. 26 (2016) 303–310.
93
[2] W.Y. Duan, X.W. Yin, F.X. Cao, Y.L. Jia, Y. Xie, P. Greil, N. Travitzky, Mater. Lett. 159 (2015) 257–260. [3] K.P. Yuan, R.C. Che, Q. Cao, Z.K. Sun, Q. Yue, Y.H. Deng, ACS Appl. Mater. Inter. 7 (2015) 5312–5319. [4] Z.H. Zhou, Z.H. Wang, Y. Yi, S.Q. Jiang, G. Wang, Mater. Lett. 112 (2013) 66–68. [5] Y. Hou, L.F. Cheng, Y.N. Zhang, Y. Yang, C.R. Deng, Z.H. Yang, Q. Chen, P. Wang, L.X. Zheng, ACS Appl. Mater. Inter. 9 (2017) 7265–7271. [6] Y. Hu, F. Luo, Z.N. Yang, W.C. Zhou, D.M. Zhu, S.C. Duan, J. Alloy. Compd. 699 (2017) 498–504. [7] J.T. Feng, Y.H. Hou, Y.C. Wang, L.C. Li, ACS Appl. Mater. Inter. 9 (2017) 14103– 14111. [8] C.H. Tian, Y.C. Du, C.S. Cui, Z.L. Deng, J.L. Xue, P. Xu, R. Qiang, Y. Wang, X.J. Han, J. Mater. Sci. 52 (2017) 6349–6361. [9] W. Zhou, L. Long, P. Xiao, Y. Li, H. Luo, W.D. Hu, R.M. Yin, Ceram. Int. 43 (2017) 5628–5634. [10] S. Wei, X.X. Wang, B.Q. Zhang, M.X. Yu, Y.W. Zheng, Y. Wang, J.Q. Liu, Chem. Eng. J. 314 (2017) 477–487. [11] Q.B. Wen, Y. Feng, Z.J. Yu, D.L. Peng, N. Nicoloso, E. Ionescu, R. Riedel, J. Am. Ceram. Soc. 99 (2016) 2655–2663. [12] Y.H. Hou, Y.C. Wang, H.L. Yuan, H. Chen, G.W. Chen, J.H. Shen, L.C. Li, J. Nanopart. Res. 18 (2016) 343–355. [13] Y. Liu, L. Li, C.X. Xie, S.T. Yu, S.W. Liu, Chem. Eng. J. 303 (2016) 31–36. [14] X.J. Ma, L.F. Huang, F.F. Wu, S.L. Xiong, B.J. Xi, Eur. J. Inorg. Chem. 23 (2016) 3722–3727. [15] G.M. Arzac, O. Montes, A. Fernández, Appl. Catal. B-Environ. 201 (2017) 391– 399. [16] H. Laadoua, R. Lucas, Y. Champavier, S. Foucaud, R. Zerrouki, F. Brouillette, Matter. Lett. 191 (2017) 46–49. [17] S. Nilmoung, T. Sinprachim, I. Kotutha, P. Kidkhunthod, R. Yimnirum, S. Rujirawat, S. Maensiri, J. Alloy. Compd. 688 (2016) 1131–1140. [18] J.H. Luo, P. Shen, W. Yao, C.F. Jiang, J.G. Xu, Nanoscale Res. Lett. 11 (2016) 141– 154. [19] Y.H. Hou, H.L. Yuan, H. Chen, J.H. Shen, L.C. Li, Sci. China Chem. 60 (2017) 740– 747. [20] Y. Hou, L.F. Cheng, Y.N. Zhang, Y. Zhang, C.R. Deng, Z.H. Yang, Q. Chen, P. Wang, L.X. Zheng, ACS Appl. Mater. Inter. 9 (2017) 7265–7271. [21] R. Qiang, Y.C. Du, Y. Wang, N. Wang, C.H. Tian, J. Ma, P. Xu, X.J. Han, Carbon 98 (2016) 599–606.
Contents lists available at ScienceDirect
Materials Letters journal homepage: www.elsevier.com/locate/mlblue
Synthesis and high-performance electromagnetic wave absorption of SiC@C composites Yanhui Hou, Huili Yuan, Xiaolu Qu, Hang Chen, Liangchao Li ⇑ Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Department of Chemistry, Zhejiang Normal University, Jinhua 321004, China
a r t i c l e
i n f o
Article history: Received 5 May 2017 Received in revised form 10 July 2017 Accepted 26 July 2017 Available online 27 July 2017 Keywords: SiC@C Composite Electromagnetic wave absorption Carbothermal reduction
a b s t r a c t A kind of simple binary composites of SiC@C were prepared via high temperature carbothermal reduction method, and their structure, composition and electromagnetic property were characterized. Results showed that the SC-2 composite was optimal and the RLmin was up to 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and the effective bandwidth (RL 10 dB) covered the whole frequency range of 10–18 GHz. In addition, the thickness, RLmin and effective bandwidth of absorber can be controlled just by changing the carbon content of composites, which makes the composites rather promising application in electromagnetic wave absorption field. Ó 2017 Elsevier B.V. All rights reserved.
1. Introduction
2. Experimental
In the modern, environmental pollution has become more and more diverse, not only includes the visible pollution such as air pollution and water pollution, but also contains the invisible pollution such as ubiquitous electromagnetic radiation (EMR) [1,2]. An electromagnetic wave (EMW) absorber is a kind of material that can decrease the reflection of incident EMW and absorb it effectively [3]. Among the varieties of EMW absorbers, SiC has become a very promising member for its good combinations of electromagnetic wave absorption and mechanical properties including hardness, wear resistance and high temperature resistance [4–6]. It has been reported that the carbon materials with excellent electrical conductivity, low density, high heat conductivity and low thermal expansion are appropriate for broadband and high-performance EMW absorbers [7–10]. Wen’s group has prepared a kind of SiC composite based on carbon materials, and its minimum RL can reach 47 dB at 2.97 mm [11]. As a result, the introduction of carbon materials with excellent wave-transmissivity is an effective way for improving EMW absorbing of SiC. What’s more, the hollow structure of absorbers can make the entered EMW multiple reflections to further enhance EMW absorbing. Based on this idea, a kind of binary composites of SiC@C with the inner hollow structure were prepared and believed that the composites had excellent absorption on EMW.
The colloidal SiO2 nanospheres were synthesized according to our previous work [12]. Briefly, 90 mL of 2-propanol, 9 mL of ethanol and 7.2 mL of deionized water were mixed and stirred (250 r/min) for 10 min. Then 12 mL of Tetraethyl silicate (TEOS) was added and stirred (250 r/min) for 20 min. Followed by adding 10 mL of NH3H2O (28 wt%), the mixture was stirred continuously for 8 h at 35 °C. The SiO2 nanospheres collected by centrifugation were washed several times with deionized water and ethanol, respectively. The above SiO2 powder (1 g) and glucose were dispersed in 150 mL of deionized water and sonicated for 15 min. Subsequently, the precursor solution was transferred into polyhenylene-lined stainless autoclave and heated at 180 °C for 12 h. After being cooled, the obtained solid products were washed separately 3 times with deionized water and ethanol, and dried to constant weight at 60 °C. Then, the SiO2@SiC@C was obtained after being calcined continuously at 900 °C for 1 h and 1500 °C for 2 h under Ar. Finally, The hollow SiC@C were gained by etching SiO2@SiC@C using HF solution (40 wt%) and designated as SC-1, SC-2, SC-3 and SC-4 corresponding to mass of glucose (0.5 g, 1.0 g, 2.0 g, 4.0 g).
⇑ Corresponding author. E-mail address: [email protected] (L. Li). http://dx.doi.org/10.1016/j.matlet.2017.07.114 0167-577X/Ó 2017 Elsevier B.V. All rights reserved.
3. Results and discussion Fig. 1 shows the schematic of the process for the preparation of SiC@C, which can be prepared just by three-step. First, the SiO2 nanospheres are coated by C6H12O6 via hydrothermal method [13]. Second, the SiO2@C nanospheres are calcined at 900 °C for
Y. Hou et al. / Materials Letters 209 (2017) 90–93
91
Fig. 1. Schematic of the process for the preparation of hollow SiC@C.
1 h to carbonize and 1500 °C for 2 h to generate SiC under Ar [14,15]. Third, the inner SiO2 of obtained SiO2@SiC@C is etched fully by HF solution to get hollow SiC@C. The SEM images of SiO2 nanospheres are shown in Fig. 2a and b. It can be seen that the size of SiO2 nanospheres is about 400 nm. After calcined, the inner SiO2 still keeps the good spherical morphology and SiC is generated partly between SiO2 and C (Fig. 2c). It can be found from Fig. 2d that the inner SiO2 is etched completely, indicating that SiC@C composites with inner hollow structure have been prepared. The XRD patterns of pure SiC and SiC@C composite are presented in Fig. 3. And it can be seen that the four clear peaks located at 35.5°, 41.2°, 59.8° and 71.7 °Correspond to the (1 1 1), (2 0 0), (2 2 0) and (3 1 1) crystal face of b-SiC (ICDD 00-029-1129), respectively [16]. In addition, the peaks of 26.0° and 42.4° are ascribed to the characteristic peak of amorphous carbon [17]. It’s worth noting that the characteristic peak (21.5°) of SiO2 is not observed in Fig. 3b, suggesting that inner SiO2 have been etched completely [19]. The absorbing properties of materials on EMW can be defined by the reflection loss (RL), which can be deduced from the following equation:
Z in Z 0 RL ¼ 20 log Z in þ Z 0 rffiffiffiffiffi Z in ¼ Z 0
ð1Þ
pffiffiffiffiffiffiffiffiffi lr 2p fd lr er tanh j er c
ð2Þ
Where Zin and Z0 is the input impedance and free impedance, f is the microwave frequency, c is the light velocity, d is the thickness of absorber, er (er = e0r je00r ) and lr = 1 [18]. Electric matching property, i.e. the Zin of absorber should be close to Z0, is an essential prerequisite for the excellent absorbers.
Fig. 3. XRD patterns of pure SiC (a) and SiC@C (b).
When EMW contacts the surface of absorber, there are three possible modes: a part of EMW can be absorbed by the surface absorber; some EMW can enter into the inner of absorber and be attenuated; and the rest of EMW is reflected on the surface of absorber [19]. Complex permittivity (e0 and e00 shown in Fig. 4a and b) is one of important EM parameters used to characterize the EMW absorption performance of absorber. Through regulating and optimizing the EMW parameters of the material, it can make incident EMW absorbed at the greatest extent. From the point of medium absorbing EMW, it is better for e00 to become larger on the basis of large e0 . Generally speaking, dielectric tangent loss (tan de = e00 /e0 shown in Fig. 4c) is usually used to represent the loss capacity of EMW energy [20,21]. The reflection loss (RL) of the composites with different thickness is shown in Fig. 5. As can be seen from Fig. 5a, the RLmin of SC-1 with the thickness of 4.7 mm on EMW is 49 dB, and no absorption at all at the thickness of 1.5 mm. Compared with SC1, the RLmin of the other composites (SC-2, SC-3 and SC-4) has a decreasing trend with the increasing of content of carbon. The
Fig. 2. SEM images of SiO2 (a, b), SiO2@SiC@C (c) and SiC@C (d).
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Y. Hou et al. / Materials Letters 209 (2017) 90–93
Fig. 4. The real e0 (a) and imaginary e00 (b) of the complex permittivity and dielectric loss tan de (c) of SC-2.
Fig. 5. Three-dimensional presentations of the reflection loss of the composites (a) SC-1, (b) SC-2, (c) SC-3 and (d) SC-4 at different thicknesses on EMW.
RLmin of SC-2 is 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and its effective bandwidth is about 8 GHz (Fig. 5b). The RLmin of SC-3 is 43.3 dB at the thickness of 1.6 mm and its effective bandwidth is 3.6 GHz (Fig. 5c), and 29.3 dB at the thickness of 1.5 mm.
When the mass of C6H12O6 increases to 2.0 g (SC-4), the RLmin is close to 30 dB with the thickness of 2.2 mm and little absorption at the thickness of 1.5 mm (Fig. 5d). With the wide use of electronic products, the wave-absorbing materials with the properties of
Y. Hou et al. / Materials Letters 209 (2017) 90–93
strong absorption, broadband, lightweight and thin will play an important role in the future [21]. Therefore, considering the RLmin, thickness of absorber and effective bandwidth, the SC-2 composite is optimal, owing to excellent electric matching property, i.e. the Zin of SC-2 is quite close to Z0. 4. Conclusion In this work, a kind of simple binary composites of SiC@C were successfully prepared via high temperature carbothermal reduction method. Among, the SC-2 composite is optimal and the RLmin reaches 39.2 dB at 16.4 GHz with the thickness of 1.5 mm and its effective bandwidth covers the whole frequency range of 10– 18 GHz. Therefore, it is believed that the SiC@C composites will be a good candidate for EMW absorption with high-performance absorption, low thickness and wide effective bandwidth. Conflict of interest The authors declare that they have no conflict of interest. Acknowledgments This work was supported by the National Natural Science Foundation of China (20104017). References [1] Z.H. Zeng, H. Jin, M.J. Chen, W.W. Li, L.C. Zhou, Z. Zhong, Adv. Funct. Mater. 26 (2016) 303–310.
93
[2] W.Y. Duan, X.W. Yin, F.X. Cao, Y.L. Jia, Y. Xie, P. Greil, N. Travitzky, Mater. Lett. 159 (2015) 257–260. [3] K.P. Yuan, R.C. Che, Q. Cao, Z.K. Sun, Q. Yue, Y.H. Deng, ACS Appl. Mater. Inter. 7 (2015) 5312–5319. [4] Z.H. Zhou, Z.H. Wang, Y. Yi, S.Q. Jiang, G. Wang, Mater. Lett. 112 (2013) 66–68. [5] Y. Hou, L.F. Cheng, Y.N. Zhang, Y. Yang, C.R. Deng, Z.H. Yang, Q. Chen, P. Wang, L.X. Zheng, ACS Appl. Mater. Inter. 9 (2017) 7265–7271. [6] Y. Hu, F. Luo, Z.N. Yang, W.C. Zhou, D.M. Zhu, S.C. Duan, J. Alloy. Compd. 699 (2017) 498–504. [7] J.T. Feng, Y.H. Hou, Y.C. Wang, L.C. Li, ACS Appl. Mater. Inter. 9 (2017) 14103– 14111. [8] C.H. Tian, Y.C. Du, C.S. Cui, Z.L. Deng, J.L. Xue, P. Xu, R. Qiang, Y. Wang, X.J. Han, J. Mater. Sci. 52 (2017) 6349–6361. [9] W. Zhou, L. Long, P. Xiao, Y. Li, H. Luo, W.D. Hu, R.M. Yin, Ceram. Int. 43 (2017) 5628–5634. [10] S. Wei, X.X. Wang, B.Q. Zhang, M.X. Yu, Y.W. Zheng, Y. Wang, J.Q. Liu, Chem. Eng. J. 314 (2017) 477–487. [11] Q.B. Wen, Y. Feng, Z.J. Yu, D.L. Peng, N. Nicoloso, E. Ionescu, R. Riedel, J. Am. Ceram. Soc. 99 (2016) 2655–2663. [12] Y.H. Hou, Y.C. Wang, H.L. Yuan, H. Chen, G.W. Chen, J.H. Shen, L.C. Li, J. Nanopart. Res. 18 (2016) 343–355. [13] Y. Liu, L. Li, C.X. Xie, S.T. Yu, S.W. Liu, Chem. Eng. J. 303 (2016) 31–36. [14] X.J. Ma, L.F. Huang, F.F. Wu, S.L. Xiong, B.J. Xi, Eur. J. Inorg. Chem. 23 (2016) 3722–3727. [15] G.M. Arzac, O. Montes, A. Fernández, Appl. Catal. B-Environ. 201 (2017) 391– 399. [16] H. Laadoua, R. Lucas, Y. Champavier, S. Foucaud, R. Zerrouki, F. Brouillette, Matter. Lett. 191 (2017) 46–49. [17] S. Nilmoung, T. Sinprachim, I. Kotutha, P. Kidkhunthod, R. Yimnirum, S. Rujirawat, S. Maensiri, J. Alloy. Compd. 688 (2016) 1131–1140. [18] J.H. Luo, P. Shen, W. Yao, C.F. Jiang, J.G. Xu, Nanoscale Res. Lett. 11 (2016) 141– 154. [19] Y.H. Hou, H.L. Yuan, H. Chen, J.H. Shen, L.C. Li, Sci. China Chem. 60 (2017) 740– 747. [20] Y. Hou, L.F. Cheng, Y.N. Zhang, Y. Zhang, C.R. Deng, Z.H. Yang, Q. Chen, P. Wang, L.X. Zheng, ACS Appl. Mater. Inter. 9 (2017) 7265–7271. [21] R. Qiang, Y.C. Du, Y. Wang, N. Wang, C.H. Tian, J. Ma, P. Xu, X.J. Han, Carbon 98 (2016) 599–606.