Synthesis of techniques creates complete system self-test

The paper discusses an emerging area of laser-semiconMicroelectron. Reliab. 22 (5),987 (1982) This paper shows how the fault models introduced in the ductor processing: the effect of laser irradiation on the electrical parameters of diffused-junctiondevices. parent paper may be applied to a commercial device. After discussion of typical EPROM architecture and 9Shallow diffusions of 0.2- to 0.5-pro depths have been circuitry, it is shown that most of the faults are detected achieved. Transistor current gains have been modified by the proposed test sequence; additional tests are sug- and the results agree with the theoretical analysis. gested to detect those faults in the peripheral circuitry which are not described by the "symmetric decoder fault" model. Although developed with reference to a specific archi- Synthesis of techniques creates complete system selfqtest tecture, most of the results of this work have general D O N A L D KOMONYTSKY validity, since the analysed arachitecture is common to Electronics, 110 (10 March 1983) Level-sensitive scan design, pattern generation, and sigthe great majority of available devices. nature analysis combine to let chips, wafers, boards hnd systems find their own faults. Generation-rtt-ombination noise in pqype silicon The detection of microcontamlnants in semiconductor G. BOSMAN and R. J. J. ZLILSTRA process iinids using an acoustic technology Solid-St. Electron. 25 (4), 273 (1982) The generation-recombination (g-r) noise spectra of D O N L. TOLLIVER, NIGEL DAVENPORT and p-type planar silicon devices were measured for fre- L E I G H R. ABTS quencies between 40 and 5 x 10~H_zin the temperature Solid St. Technol., 116 (September 1982) range 78-300 K. The resistance of these devices was Various methods of detecting solid particles in semimeasured in the same temperature range. Computer conductor process fluids are compared. An acoustical calculations involving the use of seven energy levels technique that detects particles in clear, translucent or made it possible to explain the resistance, and to interpret opaque fluids is described. Calibration of the acoustic the magnitude and the characteristic time of the various system is described, and data collected on D.I. water, g-r noise components in the spectra as a function of HF, H2SO4 and photoresist before and after filtration temperature. From these calculations the energy position are presented. in the forbidden band, the hole capture coeffident and the concentration of the different impurities were determined. Four different impurity levels with energies at Influence variables in the precision thick-film technology 0.135, 0.165, 0.325 and 0.400eV above the top of the M. K O R D O N and S. MARX valence band, found from g-r noise data. Nachrichtentechnik Elektronik 32 (H3), 118 (1982) (in German) The essential influence variables in the precision thickKnowledge a~*~hases, emulation extemi a n ~ t ~ film technology - rheology and printing stencils and capabilities masks - are discussed as to their importance to the B A R R I E NICHOLSON fine-line printing and limits shown. Measuring methods Electronic Design News, 53 (14 April 1983) of the rheology are compared and advantages of the Across the full spectrum of automated test equipment metal masks in the attaining of small structure sizes (ATE), European test-system manufacturers are res- considered. ponding to the special problems posed by increased device density and faster device speeds. Recognizing that they can never build in sufficient tester complexity to accommodate developing technology, some ftrms are Properties of Mn-doped p-type lnl_~ASyPl_y grown by instead building knowledge-database/user interaction liquid-phase epitaxy facilities into their automated test-pattern generators. SHIGEO FUJITA, MASAAKI K U Z U H A R A , Others are transferring tried-and-true laboratory de- MINETO Y A G Y U and A K I n SASAKI bugging techniques, such as development time previously Solid-St. Electron. 25 (5), 359 (1982) required to accommodate testing new technologies. This Epitaxial layers of p-type Int_~AsyP~_y doped with Mn paper discusses two such systems developed for the bi- were grown by liquid-phase epitaxy on (111)-B oriented polar semiconductor line. They are a final test logistic Ir~P substrates at a growth temperature of 635~ The system which provides for computerized tracking of each doping characteristics and electrical and luminescent device in the production line through both testing and properties were studied and compared with those in diagnostic analysis, and an automatic product disposi- Sn-doped epilayers. The distribution coefficient of Mn tinning system which immediately identifies shippable was about 0.1-0.3. The p-type epilayers with hole conproduct batches after flow through the test sector or centration of up to 3 x 10'Scra -a could be easily obtained schedules the batches for additional diagnostic analysis. by Mn doping. The activation energy of the Mn acceptor was about 40meV. Mn doping yielded a broad photoluminescent emission spectrum which probably arises Modification of semiconductor device ~ r i s t l e s by from d-shell interaction of the bin as well as strong lasers phonon coupling. From electron beam-induced current YING C. KIANG, J. RANDAL MOULIC, WEI-KAN measurements in p-n hetero-junctions utilizig Mn, a value C H U and A N D R E W C. YEN of L. = 2pm was obtained for the minority cartier'difIBM Jl Res. Dev. 26 (2), 171 (1982) fusion length of electrons in the p-type region.

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