Technics plasma GmbH

Tec hnics Plasma GmbH Technics Plasma GmbH, or Tepla, a subsidiary of the $1 bn German conglomerate Krauss Maffei AG, develops and builds plasma and ion beam systems for the industry as well as for R&D. The company boasts 20 years of experience in process technology for a wide range of plasma and ion beam applications. Ion Beam Etching in RIBE and CAIBE mode Tepla has almost 20 years of experience in ion beam etching technology and offers with the " R I B E T C H " series equipment for both R&D and manufacturing. A new CAIBE-system is now available specifically for the etching of GaAs- and InP-compounds in conj u n c t i o n with process k n o w - h o w developed together with the Fraunhofer-Institfit of Applied Solid State Physics in Freiburg, Germany. The system features clean filamentless E C R - i o n beam source, a unique substrate stage with precise Peltiertemperature control, full load lock and system control via PC and dedicated software. Increasing demand for dry etching of non-volatile films like noble metals, NiFe, ceramics etc. for the fabrication of sensors and thin film magnetic heads, develops strong interest in a u t o m a t i c ion beam systems for manufacturing. Based on its longterm experience, Tepla designed the model R I B E T E C H - 2 5 0 - A u t o l o a d , dedicated exclusively to production in cleanrooms. The systen~ uses an economic and reliable atmospheric loading r o b o t t o g e t h e r with the patented "Powercool" substrate cooling fixture for high volume production of substrates with a maximum diameter of 200 mm. The entire system is PC-controlled and simple to operate via soft-keys.

Microwave Barrel Asher for advanced Resist Stripping Resist stripping in barrel asherS is e c o n o m i c , b e c a u s e o f the high t h r o u g h p u t and the low cost of ownership. In addition, it offers even more process advantages to the user. The extended amount of time under plasma exposure increases the desorption of corrosive residues and also causes the desired hardening of SOGlayers. This in situ curing, together with appropriate wet chemical treatment, is also a very efficient way for fence r e m o v a l and for avoiding problems with so-called poisoned

vias. Moreover, the stow temperature rise in a barrel asher avoids popping of implanted resist. Also backside ashing is guaranteed, In addition, the microwave barrel asher causes negligible damage, since the plasma potential :.it 2.45 GHz is the lowest of all frequencies u>ed in common systems. The efficient microwave discharge guarantees for high rates and high throughout at moderate process temperatures. Tepla olTers with the "PlasmaProcessor" series a variety of different barrel ashers to meet the specific needs of our customers in the ~al'er fabrication or in R&I). The newest model is the Plasma Processor 300Autoload for high volume resist

Microwave barrel asher Plasma-Processor 300-Autoload with motor-driven loader fi,r advam'cd damage-lree resist stripping m wal~,r /id,rication.

0961-1290/94/$7.00 ~:)1994 Elsevier Science Ltd. Page 12

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Vol 7 No 6

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The major fields of activities are." Nanofabrication of semiconductors in microelectronics, optoelectronics and micromechanics for silicon and Ill/Vcompound technology

Resist ashing of hardened resist Microstructuring or dry etching: -- Low damage etching with ECR-technology -- CAIBE for GaAs and InP etching RIBE of metals and dielectrics -

Microwave plasma sources for surface treatment, plasma stream etching, filamentless ion beam etching

A full line of compact microwave- and ECRmicrowave sources for the installation on existing platforms or vacuum chambers

Surface technology Precision cleaning

Substrate cleaning and hydrophilization Activation of plastics Degreasing and cleaning of metal parts Plasma Polymerization

PC-board manufacturing

Drill hole desmearing Plasma drilling of polyimide foils

ashing in modern wafer fabs. The unique motor-driven loading stage guarantees for low particle count and a remote infrared temperature sensor and optical end point detector assure excellent process repeatability.

High-Density Plasma ECR-Technology For reactive processes, specifically for the etching o f GaAs- and InP-

compounds, Tepla is able to offer advanced CAIBE/RIBE-technology with the " P l a s m o d u l e ® " ECRsources. ECR-technology delivers the most dense plasma available today with high ionisation grade and a high degree of fragmentation of the process gases used. "Plasmodule" sources are the most compact ECR-sources available today and therefore well suited for installation on process modules of

cluster systems with a central wafer handler. The compact design has been achieved using the patented microwave applicator, which makes the large, cumbersome conventional waveguides obsolete. A "Plasmodule"ECR-source can be operated to produce a plasma stream for lowdamage etching or by adding grid extraction optics as a clean filamentless ion beam source.

Plasma for Cleaning and S u r f a c e Modification

CA1BE-system Ribetch-160 ECR with load lock and filament-free ECR-ion beam source, specifically designed for reactive etching of GaAs- and InP-compounds.

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Vol 7 No 6

Tepla is a leading manufacturer of systems for surface treatment. The products range from small units with chamber volumes of 10-40 litres to large industrial machines, able to hold automobile parts like bumpers or instrument panels. Various installations like rotating tables or drums for bulk parts allow a highly uniform treatment. Plasma treatment produces hydrocarbon-free ultraclean surfaces for excellent adhesion when applied prior to bonding, imprinting or painting. Typical applications in electronics are cleaning prior to wire bonding, chip bonding, wettability improvement of photo resist or substrate surfaces and modification of Polypropylene-cups for capacitors to assure good adhesion of the epoxy resin.

Plasma for PC-Board Manufacturing For more than a decade, plasma desmearing has been used to remove the drill smear inside the bore hoics oi PCBs as a prerequisite for successful throughplating to the copper layers. A completely new way of manulacturing the holes has been developed with the "Dyconcx" tcchniquc, which uses the plasma to "drill" (etch) the holes into a thin polyimidc foil. Numerous holes with all kinds or shapes can be plasma-drilled simultaneousl 5 at dimensions far beyond the common manufacturing process

Our goals

Uornpac! Plasmodulel{-ECR-Source /or lligh-Densitv l'la~ma in RIE omt C.'IIBE 7k'chnologv.

Technics Plasma is committed to serving the industry with modern plasma and dry etching technology. We are dedicated to supplying stateof-the-art equipment and developing long-term satisfying relationships with our customers. ttead

(a) CI,

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(b) BCI3 Technics P l a s m a G m b H Dieselstr. 22 a D-85551 K i r c h h e i m by M u n i c h Tel: [ 4 9 ] 0 8 9 / 9 0 5 0 3 - 0 Fax. [49/089/90503-100 C o n t a c t . M r G e r h a r d Liebel

(c) 3CI 2 + 2BCI 3

(d) 2CI a +

A series of 4 electron micrographs demonstrating the variations in C A I B E etch rate and laser mirror morphology which are obtained by modifying only the reactive gas mixture. The MBE-grown highspeed laser structure with an lno.3sGao.6~As/GaAs M Q W core region and Alo.aGao.2As cladding layers, was etched in each case at an Ar + ion beam energy o f 400 V, beam current density of 0.25-0.4 reAl cm 2 and substrate temperature o f 60°C . The use o f Cl2 alone yielded etch rates on the order o f 150200 nm/min, but produced rough mirrors with steps at the boundaries between layers with differing o_vygen affinities (a ). BCI3 ahme produced stepzfree mirrors (b ), but with etch-rates only slightly higher than those due to Ar + ion milling. As shown in c, the addition of BCI3 to CI2 allows both high etch rates and a substantial reduction in mirror roughness to he achieved. Further optimization o f the etch gas mixture (d) lead~ to almost perfi, ctlv smooth vertical mirror swfaces. ( C'ourtesy O[ Fraunhofer Institute q[ Applied SoIM State Physics, Freihurg, Germwo, J.

U S A address Technics P l a s m a 7095 Industrial R o a d Florence, K Y , 41042-6270. U S A Tel: ( 6 0 6 ) 283-0200 F a x : ( 6 0 6 ) 283-9652 Contact: M r G e r h a r d W i n t e r