The auger parameter, its utility and advantages: a review

The auger parameter, its utility and advantages: a review

Journal of Electron Spectroscopy and Related Phenomena, 47 (1988) 283-313 Elsevier Science Publishers B.V., Amsterdam - Printed in The Netherlands TH...

1MB Sizes 0 Downloads 64 Views

Journal of Electron Spectroscopy and Related Phenomena, 47 (1988) 283-313 Elsevier Science Publishers B.V., Amsterdam - Printed in The Netherlands

THE AUGER PARAMETER, REVIEW*

ITS UTILITY

AND ADVANTAGES:

283

A

C.D. WAGNER 29 Starview Drive, Oakland, CA 94618 (U.S.A) A. JOSH1 Lockheed Palo Alto Research Laboratory, 3251 Hanover Street, Palo Alto, CA 94304 (U.S.A.) (Received 9 September 1987)

ABSTRACT Photoelectron lines and X-ray excited Auger lines often exhibit differences in chemical shifts which are a function of the chemical environment of the atom. In particular, for elements which are conductors with inner shell vacancies, the doubly ionized final state results in substantial differences in screening energy, which reflects largely in the Auger line shifts. The Auger parameter, involving measurements of both Auger and photoelectron line energies, provides abundant chemical state information without the necessity or concern for charge correction and work function measurements. Since the change in Auger parameter is equal to twice the change in extraatomic relaxation energy, it is also a direct measure of the electronic interaction with the surrounding atoms. Data are presented showing systematic variations in Auger parameter values of several cations with the type and number of participating anions. The physical state of the element/ compound, whether solid, gas or in solution, is also shown to profoundly influence the Auger parameter. Finally a number of special situations such as condensed, implanted and adsorbed atoms at solid surfaces and the role of lattice structure in selected oxide systems on the Auger parameter are discussed.

INTRODUCTION

Electron spectroscopy for chemical analysis (ESCA) [ 1 ] has a special place among surface analytical techniques because of its ability to furnish nondestructively direct information of electronic states in the atom. In addition, the technique provides quantitative analysis of solid surfaces which is of significant fundamental and practical importance in understanding material behavior. The chemical state information is commonly derived from precise measurements of photoelectron energies, and to an increasing extent, from measurements of Auger electron lines. Chemical shifts in X-ray excited Auger lines are usually larger than those of the photoelectron lines. * Submitted as part of the celebration of the 70th birthday of Professor Kai Siegbahn.

036%2048/88/$03.50

0 1988 Elsevier Science Publishers B.V.

284

In some cases, natural peak widths of Auger lines are larger than photoelectron lines resulting in less accurate measurements in line shifts. However, the Auger lines resulting from Auger transitions with a final core level vacancy have at least one sharp and intense component and are measured to gain additional chemical state information. In many instances, examination of both Auger and photoelectron line shifts provides more information than either one alone. The Auger parameter, an empirical measure devised in 1975, is being found increasingly useful as evidenced by publication of over 100 articles involving its theoretical and experimental considerations and applications. This paper reviews the concept of the Auger parameter, its utility and discusses selected applications. CONCEPT OF THE AUGER PARAMETER

The concept of the Auger parameter has its origin in a survey by Wagner evaluating the Auger and photoelectron line positions in various compounds [ 21. The Auger and photoelectron data were compared for a number of sodium salts; it was seen that in the salts of NaF, NaCl, NaBr and NaI the difference between the kinetic energy of KLL Auger electrons and the photoelectrons varied from 574.0 to 576.9 eV, a 2.9 eV range. This difference is independent of reference energies and charging effects. It was also seen that the polarizability of the sodium for halides increases in the order F < Cl < Br < I. The study was followed by a comparison of the spectra of eight metals and their oxides [ 31. The data revealed large differences between the chemical shifts in Auger lines and photoelectron lines (see Table 1) . The ratio of Auger shift to photoelectron shift appears to vary in the 2-10 range, with many values at about 3. It is apparent that the Auger shifts considerably exceed the photoTABLE 1 Photoelectron and Auger energy shifts” in selected elements [ 31

Element

Photoelectronb BE shift (eV)

Auger electron KE shift (eV)

Mg Zn Ga Ge As Cd In Sn

- 1.2 -0.5 -2.0 -3.2 -3.0 -0.4 -0.8 -1.4

6.2 4.2 6.2 6.7 6.4 5.5 2.6 3.9

“Shift corresponds to energy in the elemental form less that in the oxide form. bThe average is taken of two values: 2p,,, and 3dslz, or 3d,,, and 4d.

285

electron shifts if two conditions are fulfilled at the same time: (1) the element is a conductor, and ( 2) the initial vacancy is in the inner shell. The polarization energy has been shown [ 41 to depend quadratically on the total hole charge. Since the photoelectron emission results in a singly ionized state and Auger emission in a doubly ionized final state, it then follows that differences in polarization energy are a source of systematic differences between Auger and photoelectron chemical shifts. An alternative scheme has been advanced by Shirley [ 51, employing “extraatomic relaxation”. This scheme is primarily a theoretical approach, using Hartree-Fock orbital energies, and a relaxation energy correction. A second article [ 61 relates relaxation effects on Auger energies, plus two-electron integrals from Hartree-Fock calculations. The correction amounts to approximately 2-10 eV and this shift can be attributed to extra-atomic relaxation resulting from the polarization of neighboring molecules in the solid. Shirley has also described the role of dynamic and static relaxation of outer orbitals. The experimental work with copper, zinc, sodium, and lithium metals has been detailed by Shirley and co-workers [ 7-101. In the most recent article, the derivation of the theoretical background is presented, and the compounds, salts, and oxides of sodium and zinc, examined for the first time. The difference in the values for the Auger line and photoelectron line for the different compounds has been noted. The Auger parameter concept was presented at the Faraday Society meeting in 1975 [ 111. Since the chemical shifts of photoelectron and Auger electrons are different, the difference between their kinetic energies constitutes a special spectral property, and its numerical value is unique for each chemical state. In its simplest terms, the Auger parameter is the kinetic energy of an Auger electron minus the kinetic energy of a photoelectron. In the example shown in Fig. 1 for sodium hydrogen phosphate, the Auger parameter, a, is the difference in energies of Nals and Na KLL lines. The Auger parameter concept was based on the following ideas: (1) There is a fixed difference between two line energies (Auger and photoelectron) of the same element in the same sample. (2 ) Charge corrections to the individual peak measurements are unnecessary because they simply cancel during the estimation of the Auger parameter. ( 3 ) Work function corrections are also unnecessary, and vacuum level data can be compared to Fermi level data directly. The larger Auger chemical shift leads to a value for the Auger parameter that is a major fraction of the Auger electron kinetic energy, E( Auger), and much more accurately measurable. For the state change going from the isolated atom to the elemental conductive state, the shift in kinetic energy of the photoelectron is dE(PE,,)

= -de,

+RF

(K+ )

286

(AUGER

PARAMETER

c z z

1200

1100

1000

900

800

700

BINDiNG I 0

I 100

I 300

I 200

I 400

I 500 KINETIC

600

500

ENERGY I 600

400

300

200

100

0

(eV) I 700

ENERGY

I 800

I 900

1 1000

I 1100

I 1200

(eV)

Fig. 1. ESCA spectrum of sodium hydrogen phosphate, showing the Auger parameter.

and the kinetic energy shift of the Auger electron is dE ( Auger,, e) = --de, +3R.y (K+ ) Where dc, is the energy of the electron shell in the ground elemental conductive state, e and Rz is the extra-atomic relaxation or polarization energy for single-hole (K+ ) atom. Subtraction of the photoelectron kinetic energy from the Auger kinetic energy results in the change in the Auger parameter A%-, =2Ry

(K+)

for a single-hole state and Aa,-, =1/2R:

(L+L+

)

for a 2-hole state. It was stated [ 12,131 that the average chemical shift in the Auger line is a factor of three times the photoelectron shift, and that the average agrees with theory. For elements such as Na, Mg, Cu, Zn, Ag, and Cd with small photoelectron shifts and much larger Auger shifts, the large Auger shifts as well as the Auger parameter are the logical spectral features for investigation. In 1977 Gaarenstroom and Winograd [ 141 evolved the idea of the modified

Auger parameter, ar=E(Auger)

(Y+ hv, using Wagner’s [ 111 definition

of the Auger parameter

-E(PE)

andsinceE(PE)=hv-En(PE) tr+hv=E(Augner)

+En(PE)

for a given set of E (Auger) and En (photoelectron) values, the Auger parameter is in exact reciprocal relationship (Fig. 1) with the photon energy (the higher the X-ray energy, the lower is the Auger parameter value and vice versa). AUGERPARAMETERANDSCREENINGENERGY The Auger parameters themselves have been both theoretically calculated and measured. A derivation of the Auger parameter was given by Thomas [ ES], who investigated the fundamental assumptions concerning the next level of higher order terms involved. Those contributions are probably small except when comparison is made between atoms in very dissimilar environments. Nominally, Jar equals twice the change in relaxation energy of the core ionization process, but deviations arise because of the higher order terms. In the early days of Auger spectroscopy, Aksela, using electron beam for primary excitation, conducted numerous studies of metals in the gas phase. In 1977 Varynen et al. [ 161 first studied magnesium, zinc, and cadmium in both the gas and solid phase. For these systems they superimposed Auger spectra and were able to determine the chemical shifts in gas and solid directly. This study led to additional investigations into the energetics of a large number of elements [ 171, series F-Ar, Cu-Kr and Pd-Ba. Electron binding energies and Auger electron energies in free atoms were calculated. Utilizing the measured molecular gas phase and solid state Auger spectra, Auger parameter changes were estimated. Determination of the screening energy can be accomplished by noting the change in the Auger parameter between the isolated atomic state (no screening energy) and the chemical state in question. Table 2 shows experimental data for Auger parameter chemical shifts between gaseous atomic and hydride states on the one hand and conductive solids on the other. For those elements for which no data on atomic states are available, the hydrides (with bonding to poorly polarizable hydrogen) offer the nearest basis for comparison. The increase in the Auger parameter in the conductive states ranges from 5.6to 10.7 eV. The screening energy for a single-hole state ranges from 2.8 to 5.4 eV, which is in accord with the relationship Aa=2AR”“. Typically monoatomic gases, gaseous hydrides and fluorides have minimum screening energy, in contrast to metals with conduction bands of phosphides and sulfides that possess high screening energies.

288 TABLE 2 Extremes of Auger parameter chemical shifts Gas

Reference

Solid state

Reference

Ad

Ne (9) Ar (g) Xe (9) Na (9)

140,411 [421 1481 144,451 145,161 1421 1491 1311 1511 152,161 1541 1561 1581 145,601

Ne (in Fe) Ar (in Fe) Xe (in Fe, C, or diamond)

[III [III [ 11,27,43] 1461 1471 1181 1501 1211 1511 [ 14,53 1 1551 1341 1591 [I41

6.5 6.7 5.6 9.7 10.6 9.1 8.7 9.6 10.7 10.3 8.1 8.7 8.8 8.4

Mg (9) SiF, (9) PH, (9)

I-M (9) cu(id Zn Cd Geb (d Ad-L” (9) Ag k) Cd (9)

Na (s) Mg (s) Si (s) GaP (s) NiS (s) Cu (8) En (s) Ge (s) As (s) Ag (s) Cd (s)

“36.0 eV subtracted from L2M&f5 to give value for L3M5M5 163.7 eV subtracted from 3s to give value for 3d,,,. bAa =2AR”” where R’” is the extra-atomic relaxation or screening energy. USE OF HIGHER ENERGY X-RAYS

A limitation of the most commonly employed Al or Mg Ka! X-rays is the small number of elements which produce measurable Auger lines. With Al Xrays, these values can be measured for only twenty four elements: (KU) Ne, Na, Mg; (LMM) Cu, Zn, Ga, Ge, As, Se; (M4NJVs) Ag, Cd, In, Sn, Sb, Te, I, Xe, Cs, Ba and ( N60505) Au, Hg, Tl, Pb and Bi. All the others have transitions that are valence type Auger, or they are core type that are energetically not possible. Higher energy X-ray sources offer the potential to excite new core level lines. In 1976 Castle et al. [ 191 used Si Ka radiation to detect the Alls photoelectrons and KLL Auger electrons. Keski-Rahkonen and Krause [ 203 used the Ag La line at 2984.3 eV, and the Rh La line at 2696.8 eV (gas sampies) . Wagner used Au Mcu X-rays [ 211 and West and Castle used Zr La Xrays [ 221 at very nearly the same energy (2122.9 eV vs. 2042.4 eV). Then Yates and West [ 231 and Edge11et al. [ 241 used a silver anode, with a monochromatizing crystal. A titanium anode affords the Ti Ka line at 4510.9 eV and Nishikida and Ikeda [ 251 used Cr Ka X-ray energy at 5414.7 eV. All of these higher energy anodes have the disadvantages, however, of wide lines, and extraneous lines other than the characteristic energy. However, these have their utility in many special situations. The silver anode, for example, produces useful Auger transitions from the following elements: Al, Si, P, S, Cl,

289

Br, Kr, Rb, Sr, Y, Zr, Nb, MO, Ru, Rh, Hf, Ta, W, Re, OS, Ir, Pt, Au, Hg, Tl, Pb, and Bi. Higher-energy data from elements Al, Si, P, S, Cl, and Pb are included in this review, but the Auger parameter data for Se, Br, MO, Sn, Te, Cs, Ba, Ta, W, Pt, and Au are omitted, which for the most part are rather fragmentary. Recognizing the need for multiple X-ray sources in studying a variety of materials, a spectrometer manufacturer has produced a “quadranode” source [ 261 with four individually selectable X-rays. The anode source additionally offers simul~neous excitation of two X-ray source radiations, thereby enhancing the Auger intensities. ELEMENTAL AUGER PARAMETER AND CHEMICAL STATE PLOTS

Over the past fifteen years, Auger parameters for a number of elements in various physical and chemical states have been examined and compiled [ 27,281. Some of the data were not included in these compilations where the Auger parameter values appeared unreliable. The unreliability stems from a variety of factors including the instruments, experimental conditions and charge referencing techniques that were used in collecting the photoelectron and Auger electron data. The Auger parameter data are presented in one-dimensional plots as in Fig.2, and in the form of two-dimensional chemical state plots as in Fig. 3 [ 121. These latter plots provide detailed information on photoelectron and Auger energies as well as the modifed Auger parameter. On this graph, the kinetic energies of Auger electrons are on the ordinate and the binding energies of the photoelectrons, plotting on the reverse, are on the abscissa [ 291. Each chemical state then occupies a unique position on the two-dimensional grid. An Auger parameter grid is also drawn as a family of parallel lines with a slope of + 1. All points on any one of these lines have the same value of the Auger parameter. Errors in charge referencing introduce uncertainty in data points parallel to the Auger parameter grid. For this reason, labels of compost are shown as rectangles with the long dimension parallel to the grid lines. Since the function plotted is (cx+hv), rather than (a) itself, no notation of the photon energy is required and the information can be utilized with ESCA data obtained using any X-ray source [ 291.

The Auger and photoelectron line positions of sodium in various sodium containing compounds have been measured in detail and the data summarized in Fig. 2. The (Y+ hv values correspond to the KLL Auger and 1sphotoelectron lines of sodium. The value of the Auger parameter is the highest for solid sodium, due to its conduction electrons and associated screening energy. Gaseous

290 SODIUM

SALTS

AND

FROZEN

AQUEOUS

Frozen Aqueous Solutions

a+

hv. eV (KLL, 1s) 2066 -

2065 -

SOLUTIONS

Salts Na

Na3Sb

2064 -

2063 Nal X_, 2062 -

2061 -

NaBr* NaCI* -,\ -4

\ \

NaNO 3*_. Na2SOi

2060 -

‘\

NaF*-

N.\ --,//

-

Na2SiF6 2059 -

2058 -

2057 Na (g) _--_2056 -

Fig. 2. Auger parameter of sodium salts, solids [ 11,30*,46,84] and gas [ 44,451

sodium, on the other hand, can provide no screening energy and has a 9.7 eV lower Auger parameter. For the various solid compounds the cy+ hv values vary from 2059.4 eV to 2066.1 eV, a 6.7 eV range. In the NaF-NaI series, the difference increases progressively from 2060.0 eV to 2062.7 eV as the small fluoride ion is replaced by the large, polarizable iodide ion. The shift observed in the Auger parameter is thus a measure of polarizability of the environment of the affected atom. Many of these salts were converted into their frozen aqueous solutions [ 301. When they were converted, their Auger parameters clustered together with a spread of only 0.5 eV as shown in Fig. 2. The various solvated cations have similar nearest neighbors, and have similar screening energies. It is interesting to note that for the anions, the photoelectron binding energies did not vary much between the salts and solutions.

291

1620

r

1618

1616

1614

> U !z

1612

? w 2

1610

L z G -I

1608 !Jz

,” 2

1606

1604

1602

1600

L

108

106 2p3,2

5 eV

added

to

gas

phase

104 BINDING kinetic

102

100

ENERGY energies

98

96

(eV) to

simulate

Fermi-level

Fig. 3. Chemical state plot of silicon compounds, solid [ 38,50,63,641 and gases

referencing

[481.

Magnesium Magnesium, like sodium, exhibits a small shift in its photoelectron line and a large one in its Auger line, almost 8 eV between metal and MgF, (Fig. 4).

292 MAGNESIUM

01 + hu, eV (KLL, 1s)

2489

States

Mg2Cu / RMg3Bi2

Mg

2488

2487 MgBr2*6H20 2486 MgC12

- 6H20

MgO

2485 / 2484

Olivine

-

Phlogopite k-

2483

2482

2481

2480

2478

-_---

_---

Mg(g)

Fig. 4. Auger parameter of magnesium compounds, solids [ 61,621 and gas [ 16,451.

The change in Auger parameter of metal-MgFz is the largest among the compounds presented. MgC12 and MgO have similar Auger parameter values. The intermetallic compounds Mg,Cu and Mg,B& have Auger parameters similar in value to metallic magnesium, indicating similar high screening energy.

Silicon The chemical state plot (Fig. 3 ) shows the 2p,,, KLL and Auger parameter values for silicon and its selected compounds. Several of its gas phase com-

293

pounds (four of those cited, out of a total of 24) are also included on the plot for comparison. It is noteworthy that the silicides (conductors) PdSi and V$i have larger Auger parameters while SiO, and S&N4 (insulators) have smaller Auger parameters when compared to silicon (semiconductor). The gases examined, which include some large molecules, have lower Auger parameters, indicating lower screening energy than any of the solids. Phosphorus Figure 5 shows the chemical state information for phosphorus and its compounds. As with silicon, all the gas phase compounds [ 181 have lower Auger parameters than the solids. Also, GaP (a semiconductor) has a slightly higher Auger parameter than red phosphorus. It has a total range, from GaP to PHB, of almost 9 eV. Sulfur The chemical state plot for sulfur, shown in Fig. 6, includes measurements from elemental sulfur, metal sulfides, sulfur-oxygen compounds and a considerable number [ 281 of gas phase compounds. Once again, all gas phase compounds have lower Auger parameters than any of the solids, and H2S has the lowest Auger parameter of them all. These data, indicating that atoms in insulating solids have Auger parameter values at least equal to or greater than those of atoms in the most polarizable gas phase compound, suggest that the screening energy in an insulating solid is derived from electrons associated with atoms more distant than nearest neighbors. Of particular interest are compounds SFG, SO, and CSz that were examined in the gas phase [ 31,321 as well as in the condensed phase [ 181. Note the increase in Auger parameter from the gas phase to solid phase of 2.0 eV for SFG, 3.3 eV for SO, and 3.8 eV for CS,. SFG, acquiring the least screening energy upon condensation, has a sulfur atom surrounded by six fluorine atoms, limiting the proximity of foreign molecular orbitals. CS, has peripheral sulfur atoms, so condensed neighboring molecules can exert maximal effect. S02, having two oxygen atoms surrounding the sulfur atom is an intermediate case. It becomes clear that near-neighbor atoms in a solid that are not involved in the molecular orbital system of the ionized atom can still provide substantial screening energy, amounting to l-2 eV for photoelectron transitions, and four times as much (4-8 eV) for the doubly charged final ion in the Auger transition. Chlorine The chemical state plot in Fig. 7 shows the Auger parameter data for various chlorine compounds in gas phase. The parameter increases with the substitution of chlorine in each of the series CCIFs--CC& and CH&l--CC14. Substitution of higher alkanes in the series CH&l--t-C&H&l also results in an

294 PHOSPHORUS

1858

1856

1854 2 .% 5

1852

: U F

1850

g z -I 2

1848 z m 4 1846

1844

1842

1840

140

138 2p3,2

5 eV

added

to

gas

phase

kinetic

136 BINDING

energies

134 ENERGY

to

132

130

(eV)

simulate

Fermi-level

referencing

Fig. 5. Chemical state plot of phosphorus compounds, solids [ 50,561 and gases [ 49,561.

z g

2: 0 0 s

N

N 0 a=

KL23L23 N z

8 0

N

MODIFIED

ENERGY

N

KINETIC

N

PARAMETER

N a=

N

AUGER

(eV)

(eV)

\

\

\

\

\

\

ki Q, t

N

296 CHLORINE

2378

2377

2376

2 -

2375

-I

2

2372

2371

2370

2369

2P 3,2 -.-e---

-

‘*********.* All

the

ENERGY

Compounds

CCIF3--CC12F2--CC13F--Ccl4

Compounds

CC14--CHC13--CH2C12--CH3CI

Compounds data

BINDING

are

from

(eV)

CH3CI-C2H5CI--n-C3H7CI--i-C3H7CI--t-C4HgCI gas

phase

and

are

referenced

to

Fig. 7. Chemical state plot of chlorine gas phase compounds [ 681.

the

vacuum

level

297

increase in Auger parameter. Bonding with the poorly polarizable hydrogen atom and formation of HCl results in the lowest value for the Auger parameter. Copper Formation of cuprous compounds with Se, S and 0 results in progressively larger deviation of the Auger parameter from the metallic state, as shown in Fig. 8. The 2psj2 peak of copper shows no significant chemical shift in the

$M&

2P,,,)

States

cu 1851

1850

lcu2s

Cu2Se, CulnSe2---

-cu20

1849

1848 CUCI

CuCN 1847

1846

1845 1 1844

1843

1842

1841 ------cu(g) 1840

Cuprous

t

states

only

are

cited;

cupric

had

multiplet

Fig. 8. Auger parameter of copper compounds, solids [ 59,69-721

splitting

and gas [ 511.

298

cuprous state and the entire Auger parameter shift is primarily due to the Auger line shift. Zinc Figure 9 shows the Auger parameter shifts for the halide series (group VII) and 0, S, Se and Te (group VI) elements. With fluorine being the least polarizable of these elements, the fluoride exhibits the lowest and the telluride the highest Auger parameter. Zinc compounds show almost no shift in the photoZINC

CY+ hv.

eV

States (qy4j.

ZP3,2)

2014-

2013

Zn

-

ZnTe

2012 -

ZnSe ZnS

Zn12 2011 ZnBr2 2010 -

ZnO ZnC12

ZnAl 20,+ ZnS04

2009 ZnF2 2008

-

2007

-

2006

-

2005

-

2004

-------s-m

Zn(g)

2003-

Fig.

9.

Auger parameter of zinc compounds, solids [ 14,53,73,74] and gas [ 16,521.

299

electron line, but shifts of several electron volts are observed in the Auger parameter values for these compounds. Gallium

Compounds of gallium with group V and group VI elements are shown in Fig. 10. Again a systematic trend is observed for each group, with the least polarizable compounds giving the lowest Auger parameter. Germanium

Figure 11 shows the chemical state plot for Ge and its compounds. Gas phase compounds GeF, and GeH, are observed to have the lowest Auger parameter values. The value for GeBr, is the highest of the gas phase compounds explored, and is equal to the value for solid germanium dioxide. The series GeF,--GeBr,, GeH,--GeBr, and GeH,--Ge (Me) 4 show the expected trends. Arsenic

The gas phase compound ASH, has the lowest Auger parameter value, and the As (Me) 3, and especially arsabenzene, have the highest values. Figure 12 shows a representative selection of compounds from Bahl et al. [ 341 in solid compounds. GALLIUM

ff+ hv, eV (L3M5M5,

States -

3d)

1087Ca

Ga

1086 CaAs _ 1085 -

Ca2Se3

1084 -

1083 :

CaP

CaN

Ga203

1082-

Fig. 10. Auger parameter of gallium solid compounds [ 75-781.

38

36 3d 5,2

5 eV

added

to

gas

phase

kinetic

34 BINDING

energies

32

30

ENERGY

to

28

(eV)

simulate

Fermi-level

referencing

Fig. 11. Chemical state plot of germanium compounds, solids [ 55,79,80] and gases [ 541.

,” 0

r: N

2 c

L3”45M45 N 2 !I! m

KINETIC Li 0 i

(eV)

MODIFIED

ENERGY

AUGER

;j c” : co

PARAMETER

Lz m

(eV)

z 0

302

Silver, cadmium, indium and antimony

Photoelectron lines of silver and cadmium show insignificant shifts, but the Auger lines show up to 5 eV shifts. Figures 13-15 indicate systematic Auger parameter shifts for silver, cadmium and indium in compounds formed with group VI and VII elements. Figure 16 for antimony shows similar behavior in compounds with elements in groups I and VI. The dilute alloys of silver with aluminum and magnesium have slightly higher values than elemental silver. SILVER

ff + hv. (M,+N5N5s 727

726

eV States

3d,,,)

Mg97Ag3 A’95Ag5 Ag

Ag

Ag2= Ag2Se

725

Ag20* 724

723 -

*Agl

AgO” AgOOCCF3

*AgF “AgF2 Ag2S04

722 -

721 -

720 -

719 -

718 -

__--__

_ ---

Ag(g)

717 *6.0

eV added

to value

of M5N5N5

to give

value

for

M4M5M5

Fig. 13. Auger parameter of silver compounds, solids [ 11,14*,59,82,83]

and gas [ 581.

303 CADMIUM (Y+ hv,

eV States

(M4N5N5’ 789 r

3d5/23 *Cd

788 CdTe* 787 CdSe* CdS Cd0

Cdl 2 786 _ CdBr2.4H20

CdTe03 CdS04

785 - 2CdC12. 5H20 Cd(OH12

CdF2 784 -

783 -

782 -

781 --------__

Cd(g)

780 “6.7

eV added

to value

of M5N5N5

to give

value

for

M4N5N5

Fig. 14. Auger parameter of cadmium compounds, solids [ 14*,63,85-871 and gas [ 45,603.

Iodine Auger parameter values of iodine and its compounds with various metals are shown in Fig. 17. Among the salts, LiI exhibited the lowest parameter. The I2 gas has a higher Auger parameter value than monoatomic iodine, as expected. Lead This was the only representative of the series (N,O,O,, 4f,,2). Compounds of lead with elements of groups VI and VII and selected complex lead oxides and hydroxides are shown in Fig. 18. PbFz is found to have the lowest Auger parameter value. PbOp has a slightly lower value than PbO.

304 INDIUM

0 + hv,

(M4N5”‘5,

eV

States

3d5,2) In

854

853

E

ln2Te3

-

InSb In2Se3

CulnSe2

852

InP ‘n2S3

lnl3 851

lnt3r3 IdI3

E 850

ln2’3 In(0l-l)

InF3

3

849

848 i

Fig. 15. Auger parameter of indium solid compounds [ 11,12,27,72,88-901. ANTIMONY Q + hv,

(M4N5N5,

992

eV States

3d5,2) Sb Sb2S3

991

Cs3Sb

Sb2S5

K 3Sb Na3Sb

990

Sb203 989

988

KSbFs 987

_

Fig. 16. Auger parameter of antimony solid compounds [ 11,84,90].

305 IODINE

a + hv, (M4N5N5,

eV 3d5,2)

States

1139

1138

*Agl *CUl Li

1133

--____---

I,(g)

-______----

l(g)

k

1132 I

*l 1.5 eV

value

L

I

for

added to the M4N5N 5

value

of M5N5N 5 to provide

Fig. 17. Auger parameter of iodine compounds, solids [ 14*,27,92] and gases [93,94].

LEAD CY + hv,

eV

(M4N5N5n3d5,2) 233

232

States

Pb PbTe PbSe PbS Pb12 PbBr2

231

Pb02 PbO

230

229

PbCrO4

PbC12 -

PbF2

Fig. 18. Auger parameter of lead solid compounds [ 95,961.

PbTi03 Pb(N0 I2 Pb(OH J3 2 PbSi03

306 SELECTED SPECIAL CASES

There are a number of special cases where the Auger parameters have been most helpful in understanding the screening energy changes resulting from modifications in the atomic or molecular environment. These involve valence band transitions, photoelectron and Auger core level shifts and surface core level shifts, changes in crystallinity and absorption and implantation phenomena.

Ammonia and water

Data are available on two other molecules in both solid and gas phase: ammonia and water (see Table 3). Although the Auger transitions are valencetype (CVV) transitions, so that changes in bonding can affect the line distribution, it appears that valid comparisons can be made. For water, the dominant (lbllbl) peak appears in both spectra [ 33,35],23.7-24.0 eV distant from the ( 2a,lbl) peak, so hydrogen bonding does not seem to affect the energies of these peaks. The Auger parameter for solid water [ 331 is found to be 2.3 eV larger than that for gaseous water [ 35,401. For ammonia, again, the distribution (le3a1) peak is almost the same for the gas and the solid [ 36, 371, and the parameter for the solid [ 361 is 4.4 eV larger than that for the gas [ 371. It is clear that the proximity of other molecules is important in modifying the kinetic energies of emitted Auger and photoelectrons. Knowledge of these energies will be useful in determining the environment of atoms in thin films, adsorbed species, and aggregates approaching atomic dimensions. TABLE 3 Auger parameters of ammonia and water

NinNH, NinNH, Change

(g) (s)

0 in H20 (g) OinHzO (s) Change

Photoelectron BE (ls)“(eV)

Auger electron KE (KLL)“(eV)

405.55 (v) 398.8

365.46(v) 376.6

539.9(v) 532.9

498.2(v) 507.9

a(v) Energy references to vacuum level.

a+hv 771.01 775.4 4.39 1038.1 1040.8 2.7

Reference 1371 [361 135,401 [331

307

Phenylsilicone and methylsilicone resins Figure 19 shows the chemical state plot for Si-0 compounds. Included in this category are the silicon polymers, silicon dioxide, aluminosilicates and silicates [ 381. The Auger parameters for dimethylsilicone polymer and the methysilicone resin ( MeSiO,,,) were at 1711.8 eV, while the phenylsilicone resin ( PhSiO,,,) was 1.0 eV higher due to its greater polarizability. The observation of the oxygen Auger parameter at the same time confirmed that the oxygen was perturbed also, but to a lesser degree. The silicon is bonded directly to the phenyl, while the oxygen is bonded to silicon and only indirectly to the phenyl group. Octahedral alumina versus tetrahedral alumina The octahedral aluminum oxides, hydroxides, and aluminosilicates are in the region of aluminum Auger parameters of 1461.4-1462.0 eV (Fig. 20). On the other hand, albite and natrolite, and the synthetic zeolites possess tetrahedral crystal form and they occupy a region 1460.3-1460.8 eV, about 1.2 eV lower in parameter. In a parallel study, West and Castle [ 221 have observed different Auger parameter values for tetrahedral aluminum. Using 1s and KLL lines, they related the parameter values to variable polarizabilities of the oxygen atom in the aluminosilicates, as measured by the refractive indices. Auger parameter shifts of xenon in adsorbed and implanted forms It would be expected that there should be effects of the nature of the substrate on line energies from thin films or from very small aggregates. Data are available on xenon, adsorbed on and implanted in host matrices, as shown in Fig. 21. The Auger parameter is the largest for xenon implanted in conductors, such as iron and graphite. Slightly less screening energy is available to adsorbed films of conductors, platinum, and molybdenum. When the support is oxidized, conduction electrons are not available, and screening energy is smaller still, but is still appreciable, as shown by the much smaller value for gaseous xenon. Distance-dependent relaxation shifts of photoemission and Auger energies for Xe on Pd(001) An elegant experiment of rare gas adsorption on metal substrates was performed by Kaindl et al. [ 391. They adsorbed one monolayer of xenon on a crystal face of palladium, and recorded the xenon 4cE,,,line and the NO0 group of lines. Figure 22 summarizes the results. The shift from gaseous xenon of each of these lines for the first adsorbed monolayer is 2.14 and 6.57 eV. The

308 COMPARISON

OF SILICONE AND

WITH

SILICATES,

SILICON

ALUMINOSILICATES,

DIOXIDE

.VI

1606

Iii

ALUMINO-SILICATES SILICONES

103 Si2p

BINDING

102 ENERGY

(eV1

ms

Dimethylsilicone

ox

Silicon

mr

Methylsilicone

Resin

cr

o-Cristobalite

pr

Phenylsilicone

Resin

t

Talc

9

o-Quartz

k

Kaolinite



Vycor

P

Pyrophyllite

9

Silica

sp

Spodumene

w

Wollastonite

Gel

Polymer

Dioxide

Fig. 19. Chemical state plot of selected silicon-oxygen compounds [ 381,

309 COMPARISON

OF

OCTAHEDRAL

TES, OXIDES AND OCTRAHEDRAL

AND

TETRAHEDRAL

ALUMINOSILICATES

TETRAHEDRAL

HYDROXIDES,

Al2p

BINDING

sa

Sapphire

sp

Spodumene

CY

o-Alumiha

p

Pyrophylli

Y

Y-Alumina

k

ENERGY

A

(eV)

Molecular

Sieve

X

Molecular

Sieve

Type

X

Kaolinite

Y

Molecular

Sieve

Type

Y

te

bo

Boehmite

a

Albite

2

H

ba

Bayerite

n

Natrolite

HS

Hydroxysodalite

gi

Cibbsite

Type

A

Zeolon

Fig. 20. Chemical state plot of selected aluminum-oxygen compounds [ 381.

ratio is almost exactly three (3.07)) as expected from simple theory. When a second layer was added, the shift in the first layer increased slightly because of the extra screening energy from the first layer, but the intensity of the lines diminished. The shifts registered by the second layer were smaller, 1.49 and

310 AUGER

PARAMETER

ADSORBED

SHIFTS

AND

OF XENON

IMPLANTED

IN

FORMS

(Y + h v, eV

(M4N5N5, 3d,,,) 1215

1214

Xe Xe Xe Xe Xe

States

imp imp imp ads ads

in in in on on

Fe C C* MO Pt

1213 Xe ads on Moo2

Xc(g)

*C

in diamond

---

-

-

form

Fig. 21 Auger parameter shifts of xenon in adsorbed and implanted forms, solids [ 11,27,43,97,98] andgas [99]. @Es)

(AE)

4d -----2 I

Auger

-

Au (evl

L I I I

3.2 1

1

----I

L

I

2 LAYERS

NO0

2

I

4.5

I

1 I

2 i

I I 1 LAYER

Xe

1

I

I

(001)

SHIFT

IN

I

I 4

2

imsg Pd

q.4i

I I

KINETIC

ENERGY

I 6

(eV)

Fig. 22. Distance-dependent relaxation shifts of photoelectron Auger energies for Xe on Pd (001)

[391.

311

4.69 eV respectively, as expected because of the greater distance from the metal, but the ratio was still a factor of three (3.15).

REFERENCES 1 K. Siegbahn, C. Nordling, A. Fahhnan, R. Nordberg, K. Hamrin, J. Hedman, G. Johansson, T. Bergmark, S.E. Karlsson, I. Lindgren and B. Lindberg, ESCA-Atomic, Molecular and Solid State Structure Studied by Means of Electron Spectroscopy, Nova Acta Regiae Sot. Sci Upsaliensis, Ser. IV, Vol. 20 (1967). C.D. Wagner, Anal. Chem., 44 (1972) 972. C.D. Wagner and P. Biloen, Surf. Sci., 35 (1973) 82. N.F. Mott and R.W. Gurney, Electronic Processes in Ionic Crystals, Clarendon, Oxford, 1948. D.A. Shirley, Chem. Phys. Lett., 16 (1972) 220. D.A. Shirley, Chem. Phys. Lett., 17 (1973) 312. S.P. Kowalczyk, R.A. Pollack,F.R. McFeely,L. Ley,andD.A. Shirley,Phys. Rev. B,8 (1973) 2387. 8 L. Ley, S.P. Kwalczyk, F.R. McFeeley, R.A. Pollak, andD.A. Shirley, Phys. Rev. B, 8 (1973) 2392. 9 S.P. Kowalczyk, L. Ley, F.R. McFeeley,R.A. Pol1akandD.A. Shirley, Phys. Rev. B, 8 (1973) 3583. 10 S.P. Kowalczyk, L. Ley, F.R. McFeely,R.A. Pollak,andD.A. Shirley,Phys. Rev.B,9 (1974) 381. 11 C.D. Wagner, Faraday Discuss. Chem. Sot., 60 (1975) 291. 12 C.D. Wagner, in D. Briggs (Ed. ) , Handbook of X-Ray and Ultraviolet Photoelectron Spectroscopy, Heyden, London, 1977, Chap. 7. 13 C.D. Wagner, J. Electron Spectrosc. Relat. Phenom., 10 (1977) 305. 14 S.W. Gaarenstroom and N. Winograd, J. Chem Phys., 67 (1977) 3500. 15 T.D. Thomas, J. Electron Spectrosc. Relat. Phenom., 20 (1980) 117. 16 J. Vayrynen, S. Aksela, and H. Aksela, Phys. Ser., 16 (1977) 452. 17 S. Aksela, R. Kumpula, H. Aksela, and J. Vayrynen, Phys. SC., 25 (1982) 45. 18 C.D. Wagner and J.A. Taylor, J. Electron Spectrosc. Relat. Phenom., 28 (1982) 211. 19 J.E. Castle, L.B. Haze& and R.D. Whitehead, J. Electron Spectrosc. Relat. Phenom., 9 (1976) 247. 20 0. Keski-Rahkonen, and M.O. Krause, J. Electron Spectrosc. Relat. Phenom., 9 (1976) 371. 21 C.D. Wagner, J. Vat. Sci. Technol., 15 (1978) 518. 22 R.H. West and J.E. Castle, Surf. Interface Anal., 4 (1982) 68. 23 K. Yates and R.H. West, Surf. Interface Anal., 5 (1983) 133. 24 M.J. Edgell, R.W. Paynter, and J.E. Castle, J. Electron Spectrosc. Relat. Phenom., 37 (1985) 241. 25 S. Nishikida and S. Ikeda, Bull. Chem. Sot. Jpn., 51 (1978) 1966. 26 Y. Xiang-Rong, Surf. Interface Anal., 10 (1987) 262. 27 C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, and G.E. Muilenberg, Handbook of XRay Photoelectron Spectroscopy, Perkin-Elmer Corp., Eden Prairie, MN, 1979. 28 C.D. Wagner, in D. Briggs and M.P. Seah (Eds.) , Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, Wiley, London, 1983, App. 4. 29 C.D. Wagner, L.H. Gale, and R.H. Raymond, Anal. Chem., 51 (1979) 466. 30 H. Kuroda, T. Ohm, and Y. Sato, J. Electron Spectrosc. Relat. Phenom., 15 (1979) 21. 31 R.N.S. Sodhi and R.G. Cavell, J. Electron Spectrosc. Relat. Phenom., 41 (1986) 1.

312 32 33 34 35 36 37 38 39

40 41 42

43 44 45 46 47 48 49

50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67

E.J. Suoninen, T.D. Thomas, S.E. Anderson, M.T. Runyan, and L. Ungier, J. Electron Spectrosc. Relat. Phenom., 35 (1985) 259. C.D. Wagner, D.A. Zatko, and R.H. Raymond, Anal. Chem., 52 (1980) 1445. M.K. Bahl, R.O. Woodall, R.L. Watson, and K.J. Irgolic, J. Chem. Phys., 64 (1976) 1210. W.E. Moddeman, T.A. Carlson, M.O. Krause, B.P. Pullen, W.E. Bull, and G.K. Schweitzer, J. Chem. Phys., 55 (1971) 2317. F.P. Larkins and A. Lubenfeld, J. Electron Spectrosc. Relat. Phenom., 15 (1979) 137. R.W. Shaw, J.S. Jen, and T.D. Thomas, J. Electron Spectrosc. Relat. Phenom., 11 (1977) 91. C.D. Wagner, D.E. Passoja, H.F. Hillery, T.G. Kinisky, H.A. Six, W.T. Jansen, and J.A. Taylor, J. Vat. Sci. Technol., 21 (1982) 933. G. Kaindl, T.C. Chiang, D.E. Eastman, and F.J. Himpsel, Phys. Rev. Lett., 45 (1980) 1808. T.D. Thomas and R.W. Shaw, J. Electron Spectrosc. Relat. Phenom., 5 (1974) 1081. H. Agren, J. Nordgren, L. Selander, C. Nordling, and K. Siegbahn, J. Electron Spectrosc. Relat. Phenom., 14 (1978) 27. K. Siegbahn, C. Nordling, G. Johansson, J. Hedman, P.F. Heden, K. Hamrin, U. Gelius, T. Bergmark, L.O. Werme, R. Manne, and Y. Baer, ESCA Applied to Free Molecules, NorthHolland, Amsterdam, 1969. S. Evans, Proc. R. Sot. London, A, Ser. 370 (1980) 107. R.L. Martin, E.R. Davidson, M.S. Banna, B. Wallbank, D.C. Frost, and C.A. McDowell, J. Chem. Phys., 68 (1978) 5459. W. Mehlorn, B. Breuckmann, and D. Hausamann, Phys. Ser., 16 (1977) 177. A. Barrie and F.J. Street, J. Electron Spectrosc. Relat. Phenom., 7 (1977) 1. J.C. Fuggle, Surf. Sci., 69 (1977) 581. P. Kelfve, B. Blomberg, H. Siegbahn, K. Siegbahn, E. Sanhueza, and 0. Gosciuski, Phys. Ser., 21 (1980) 75. R.G. Cave11and R.N.S. Sodhi, J. Electron Spectrosc. Relat. Phenom., 41 (1986) 25. C.D. Wagner and J.A. Taylor, J. Vat. Sci. Technol., 20 (1980) 83. S. Aksela and J. Sivonen, Phys. Rev. A, 25 (1982) 1243. M.S. Banna, D.C. Frost, C.A. McDowell, and B. Wallbank, J. Chem. Phys., 68 (1978) 696. A. Lebugle, U. Axelsson, R. Nyholm, and N. Martensson, Phys. Ser. 23 (1981) 825. W.L. Perry and W.L. Jolly, Chem Phys. Lett., 23 (1973) 529. J.F. McGilp and P. Weightman, J. Phys. C, 9 (1976) 3541. A.J.Ashe, M.K. Bahl,K.D.Bomben, W.T. Chan, J. Gimzewski,P.A. SittonandT.D.Thomas, J. Am. Chem Sot., 101 (1979) 1764. R. Hoogewijs, L. Fiermans, and J. Vennik, J. Electron Spectrosc. Relat. Phenom., 11 (1977) 171. J. Vayrynen, S. Aksela, M. Kellokumpu, and H. Aksela, Phys. Rev. A, 22 (1980) 1610. M.T. Anthony and M.P. Seah, Surf. Interface Anal., 6 (1984) 95. S. Aksela, H. Aksela, M. Vuontisjarvi, J. Vayrynen, and E. Lahteenkorva, J. Electron Spectrosc. Relat. Phenom., 11 (1977) 137. H. Seyama and M. Soma, J. Chem. Sot. Faraday Trans. 1,80 (1984) 237. J.C. Fuggle, L.M. Watson, D.J. Fabian, and S. Affrossman, J. Phys. F, 5 (1975) 375. P. Streubel, R. Fellenberg, and A. Reif, J. Electron Spectrosc. Relat. Phenom., 34 (1984) 261. B. Egert and G. Panzner, Phys. Rev. B, 29 (1984) 2091. M. Schaerli and J. Brunner, Z. Phys. B, 42 (1981) 285. L. Asplund, P. Kelfve, B. Blomster, H. Siegbahn, K. Siegbahn, R.L. Lazes, and U.I. Wahlgren, Phys. Ser. 16 (1977) 273. L. Asplund, P. Kelfve, H. Siegbahn, 0. Goscinski, H. Fellner-Feldegg, K. Hamrin, B. Blomster, and K. Siegbahn, Chem. Phys. Lett., 40 (1976) 353.

313 68 69

70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96

97 98 99

E.J. Aitken, M.K. Bahl, K.D. Bomben, J.K. Gimzewski, G.S. Nolan, and T.D. Thomas, J. Am. Chem Sot., 102 (1980) 4874. R.J. Bird and P. Swift, J. Electron Spectrosc, Relat. Phenom., 21 (1980) 227. J.C. Klein, A. Proctor, D.M. Hercules, and J.F. Black, Anal. Chem., 55 (1983) 2055. B.R. Strohmeier, D.E. Leyden, R.S. Field, andD.M. Hercules, J. Catal., 94(1985) 514. D. Cahen, P.J. Ireland, L.L. Kazmerski, and F.A. Thiel, J. Appl. Phys., 57 (1985) 4761. L. Fiermans, R. Hoogewijs, and J. Vennik, Surf. Sci., 63 (1975) 390. B.R. Strohmeier and D.M. Hercules, J. Catal., 86 (1984) 266. J. Hedman and N. Martensson, Phys. Ser., 22 (1980) 176. H. Iwakuro, C. Tatsuyama, and S. Ichimura, Jpn. J. Appl. Phys., 21 (1982) 94. Y. Mizokawa, H. Iwasaki, R. Nishitani, and S. Nakamura, J. Electron Spectrosc. Relat. Phenom., 14 (1978) 129. R. Nishitani, H. Iwasaki, Y. Mizokawa, and S. Nakamura, Jpn. J. App. Phys., 17 (1978) 321. R.B. ShaIvoy, G.B. Fisher, and P.J. Stiles, Phys. Rev. B, 15 (1977) 1680. T. Ueno, Jpn. J. Appl. Phys., 22 (1983) 1349. J.A. Taylor, J. Vat. Sci. Technol., 20 (1982) 751. R. Romand, M. Roubin, and J.P. Deloume, J. Electron Spectrosc. Relat. Phenom., 13 (1978) 229. P. Weightman and P.T. Andrews, J. Phys. C, 13 (1980) 3529. C.W. Bates and L.E. Galan, Proc. Int. Symp. Tech. Commun. Photon-Detect. Int. Meas. Confed., Budapest, Hungary, 9-12 September 1980, pp 100-129. R.F.C. Farrow, P.N.J. Dennis, H.E. Bishop, N.R. Smart, and J. Wotherspoon, Thin Solid Films, 88 (1982) 87. R. Nyholm and N. Martensson, Solid State Commun., 40 (1981) 311. A. Roche, H. Mantes, J. Brissot, M. Romand, P. Josseaux, and A. De Mesmaeker, Appl. Surf. Sci., 21 (1985) 12. P.A. Bertrand, J. Vat. Sci. Technol., 18 (1981) 28. A.W.C. Lin, N.R. Armstrong, and T. Kuwana, Anal. Chem., 49 (1977) 1228. M. Pessa, A. Vuoristo, M. Vulli, S. Aksela, J. Vayrynen, T. Rantala, and H. Aksela, Phys. Rev. B, 20 (1979) 3115. S. AkseIa, J. Vayrynen, H. Aksela, and S. Pennanen, J. Phys. B, 13 (1980) 3745. J.G. Dillard, H. Moers, H. Klewe-Nebenius, G. Kirch, G. Pfennig, and H. Ache, J. Phys. Chem., 88 (1984) 4104. T. Rantala, J. Vayrynen, R. KumpaIa, and S. Aksela, Chem Phys. Lett., 66 (1979) 384. S. Aksela, H. Aksela, andT.D. Thomas, Phys. Rev. A, 19 (1979) 721. L.R. Pederson, J. Electron Spectrosc. Relat. Phenom., 28 (1982) 203. J.A. Taylor and D.L. Perry, J. Vat. Sci. Technol. A, 2 (1984) 771. R.M. Henry, T.A.B. Fryberger, and P.C. Stair, J. Vat. Sci. Technol., 20 (1982) 818. N.E. Erickson, J. Vat. Sci. Technol., 11 (1974) 226. L.O. Werme, T. Bergmark, and K. Siegbahn, Phys. Ser., 6 (1972) 141.