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The effect of oxygen on the electrical properties of silicon
vi
ABSTRACTS OF PAPERS TO APPEAR IN J. PHYS. CHEM. SOLIDS
decreasing temperature. However, no evidence for a phase transition was found in either OHAp or FAp in the 12 to 295 K temperature range.
5
Received 13 December 1976
3.
THE EFFECT OF OXYGEN ON THE ELECTRICAL PROPERTIES OF SILICON T.S. Glowinke and J. Bruce Wagner, Jr., Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, illinois, U.S.A.
Interstitial oxygen present in solution, as detected by the 9p absorption band, increases the Hall mobility of electrons in n-type silicon crystals but decreases the Hall mobility of holes in p-type. These results are explained by the lattice strain produced via dissolved interstitial oxygen impurities. Results on samples saturated with oxygen and heat treated to cause precipitation of Si0 2 in the temperature range of 950°to 1250°C show that the SiO2 particles decrease the values of Hall mobility to Re-annealing the initial values on the samples without compared precipitates. causes dissolution of the precipitates and recovery nearly to the initial values of the Hall coefficient. Received 21 June 1976 Revised 11 January 1977
4
Vol. 21, No. 12
SILVER-COMPENSATED GERMANIUM CENTER IN &-QUARTZ F.C. Laman and J.A. Well, Department of Chemistry and Chemical Engineering, University of Saskatchewan, Saskatoon, Saskatchewan, Canada, S7N OWO
A synthetic germanium-doped crystal of a-quartz was subjected to an electro-diffusion process (Ca. 600 V/cm, 625 K), in which Ag~ions were introduced along the crystal’s optic axis (c). A 9800 MHz electron paramagnetic resonance spectrum at room temperature, taken after room temperature X-irradiation, revealed the presence of a silver-compensated germanium center A Ge—Ag with large, almost isotropic 107Ag and ‘°9Ag hyperfine splittings (26.078, 30.112 mT for magnetic field Blic). Measurement of the spin-Hamiltonian (i.e. matrices A 73Ge’ 107Ag and A 1O9~g) discloses that a suitable model for the observed center utilizes germanium, substituted for silicon, with the accompanying ,~,
—
silver interstitial in a nearby c-axis channel, and with electronic structure in which an Estimates appreciable 4~—Ag° to Ge3~—Ag~ exists. of admixture the unpaired Ge electron orbital are presented. Received 9 August 1976 6
INTERSTITIAL POSITION OF HYDROGEN IN METALS FROM ENTROPY OF SOLUTION A. Magerl, N. Stump, H. Wipf and G. Alefeld.
FERRIMAGNETISM IN CsMn 1 ~Ni~F3 AND CsMn~_~Co~F3 Yuji Yamaguchi and Toshiaki Sakuraba, Electrotechnical Laboratory, Tanashi, Tokyo 188, Japan.
Physik-Department der Technischen Universität Munchen, 8046 Garching, Germany Using recent neutron scattering data for the change in the acoustical spectrum due to hydrogen in Nb. Ta. Pd and including experimental data on the localized
CsMn1 _~Ni~F3 with 0.3 ~ x ~ 0.5 and CsMni _~Co~F3 with 0.4 ~ x ~ 0.65 have been found to be ferrimagnetic with a Curie temperature ± 1 K. 1B per 50 formulaThe magnetic moment at 4.2 K is 1.42 / unit for CsMn 1•77/~B for 065Ni0 35F3, and CsMn 06Co04F3. The crystal structure has been determined to be rhombohedral; it probably has a stacking of twelve CsF3 -layers in the unit cell in hexagonal representation. Magnetic properties have been explained on the assumption that a Ni (Co) ion has a strong preference for occupying one of three inequivalent sites in the structure. It has been suggested that the magnetic moments of one-quarter of the magnetic ions couple antiparallel to those of the other three-quarters so that ferrimagnetism appears. The Curie temperature has been discussed in the molecular field approximation.
mode frequencies and the change in electronic specific heat, it is calculate of solution of H in Nbpossible and Ta to and H and Dthe in entropy Pd absolutely and its temperature dependence. A comparison with experimental values for the entropy of solution suggests the
Received 15 November 1976
occupation of the tetrahedral for H in Nb and Ta and the octahedral sites for H sites and D in Pd. Received 10 December 1 976 Revised 5 January 1977
7
CLOSED TUBE SUBLIMATION GROWTH OF Ga2Se2: SOLID—VAPOUR EQUILIBRIA AND MASS TRANSPORT AM. Mancini, C. Manfredotti, R. Piccolo and A. Rizzo, Istituto de Fisica, Universita’ di Ban, Ban, Italy.
ABSTRACTS OF PAPERS TO APPEAR IN J. PHYS. CHEM. SOLIDS
decreasing temperature. However, no evidence for a phase transition was found in either OHAp or FAp in the 12 to 295 K temperature range.
5
Received 13 December 1976
3.
THE EFFECT OF OXYGEN ON THE ELECTRICAL PROPERTIES OF SILICON T.S. Glowinke and J. Bruce Wagner, Jr., Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, illinois, U.S.A.
Interstitial oxygen present in solution, as detected by the 9p absorption band, increases the Hall mobility of electrons in n-type silicon crystals but decreases the Hall mobility of holes in p-type. These results are explained by the lattice strain produced via dissolved interstitial oxygen impurities. Results on samples saturated with oxygen and heat treated to cause precipitation of Si0 2 in the temperature range of 950°to 1250°C show that the SiO2 particles decrease the values of Hall mobility to Re-annealing the initial values on the samples without compared precipitates. causes dissolution of the precipitates and recovery nearly to the initial values of the Hall coefficient. Received 21 June 1976 Revised 11 January 1977
4
Vol. 21, No. 12
SILVER-COMPENSATED GERMANIUM CENTER IN &-QUARTZ F.C. Laman and J.A. Well, Department of Chemistry and Chemical Engineering, University of Saskatchewan, Saskatoon, Saskatchewan, Canada, S7N OWO
A synthetic germanium-doped crystal of a-quartz was subjected to an electro-diffusion process (Ca. 600 V/cm, 625 K), in which Ag~ions were introduced along the crystal’s optic axis (c). A 9800 MHz electron paramagnetic resonance spectrum at room temperature, taken after room temperature X-irradiation, revealed the presence of a silver-compensated germanium center A Ge—Ag with large, almost isotropic 107Ag and ‘°9Ag hyperfine splittings (26.078, 30.112 mT for magnetic field Blic). Measurement of the spin-Hamiltonian (i.e. matrices A 73Ge’ 107Ag and A 1O9~g) discloses that a suitable model for the observed center utilizes germanium, substituted for silicon, with the accompanying ,~,
—
silver interstitial in a nearby c-axis channel, and with electronic structure in which an Estimates appreciable 4~—Ag° to Ge3~—Ag~ exists. of admixture the unpaired Ge electron orbital are presented. Received 9 August 1976 6
INTERSTITIAL POSITION OF HYDROGEN IN METALS FROM ENTROPY OF SOLUTION A. Magerl, N. Stump, H. Wipf and G. Alefeld.
FERRIMAGNETISM IN CsMn 1 ~Ni~F3 AND CsMn~_~Co~F3 Yuji Yamaguchi and Toshiaki Sakuraba, Electrotechnical Laboratory, Tanashi, Tokyo 188, Japan.
Physik-Department der Technischen Universität Munchen, 8046 Garching, Germany Using recent neutron scattering data for the change in the acoustical spectrum due to hydrogen in Nb. Ta. Pd and including experimental data on the localized
CsMn1 _~Ni~F3 with 0.3 ~ x ~ 0.5 and CsMni _~Co~F3 with 0.4 ~ x ~ 0.65 have been found to be ferrimagnetic with a Curie temperature ± 1 K. 1B per 50 formulaThe magnetic moment at 4.2 K is 1.42 / unit for CsMn 1•77/~B for 065Ni0 35F3, and CsMn 06Co04F3. The crystal structure has been determined to be rhombohedral; it probably has a stacking of twelve CsF3 -layers in the unit cell in hexagonal representation. Magnetic properties have been explained on the assumption that a Ni (Co) ion has a strong preference for occupying one of three inequivalent sites in the structure. It has been suggested that the magnetic moments of one-quarter of the magnetic ions couple antiparallel to those of the other three-quarters so that ferrimagnetism appears. The Curie temperature has been discussed in the molecular field approximation.
mode frequencies and the change in electronic specific heat, it is calculate of solution of H in Nbpossible and Ta to and H and Dthe in entropy Pd absolutely and its temperature dependence. A comparison with experimental values for the entropy of solution suggests the
Received 15 November 1976
occupation of the tetrahedral for H in Nb and Ta and the octahedral sites for H sites and D in Pd. Received 10 December 1 976 Revised 5 January 1977
7
CLOSED TUBE SUBLIMATION GROWTH OF Ga2Se2: SOLID—VAPOUR EQUILIBRIA AND MASS TRANSPORT AM. Mancini, C. Manfredotti, R. Piccolo and A. Rizzo, Istituto de Fisica, Universita’ di Ban, Ban, Italy.