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The effects of gettering (with B2O3) on the forward characteristics of silicon solar cells
Classified Abstracts 875--878
333
Basic Science and Engineering 51.
other in a vacuum and application of the method to the manufacture of field-effect transistors. See Abstr. No. 848.
Physics, Astronomy, Geophysics 51 : 16
New theory of adhesion. See Abstr. No. 786.
56 : 30 The T.F.T., a new thin film transistor. See Abstr. No. 846.
51 : 33 Measurement of laser output by light pressure. See Abstr. No. 858.
56 : 30 Thin film transistors with metal base. See Abstr. No. 845.
52.
Physical Chemistry
52 : 41 : 33 875. Thermal re-arrangement of a perfectly ordered tungsten surface. Great Britain. Atomically smooth and almost perfectly ordered tungsten surfaces can be prepare d in the field ion microscope of field evaporation at low temperatures. Field ion micrographs, however, show that after thermal annealing, the tungsten field emitters possess a relatively disordered surface. The authors investigated this phenomena, using a field ion microscope operating at a pressure < 5 × 10 -~ torr in order to prevent contamination of the emitter surface by gas absorption. The temperature at ~which movement of surface atoms first takes place is of the order of 450°C and is not the same for all crystal planes. The surface rearrangements are probably due to atoms from the kink sites moving along the edge of the layer to other sites which act as traps, w.J.s. D. W. Bassett, Nature, 198 (4879), 4 May 1963, 468-469.
56 : 30 : 33 Pulse measurements on thin magnetic films. See Abstr. No. 843. 56 : 30 : 33 Digital thin film memories. See Abstr. No. 842. 56 : 30 Aluminized cathode ray tubes. See Abstr. No. 840. 56 : 30 Resonance technique for non-destructive readout of thin magnetic films. See Abstr. No. 837. 56 : 30 : 41 Thin film production performed continuously. See Abstr. No. 841. 56 : 47 The effects of gettering (with B203) on the forward characteristics of silicon solar calls. See Abstr. 1'4o. 874. 56 : 30
54.
Biology, Biochemistry, Pharmaceutics, Toxicology, Organic Chemistry 54 : 33
Electron microscopy. S e e Abstr. No. 867.
56.
Electrical Engineering, Electronic Circuits, Electrical Devices
56 876. Ability of voltage,graded surface to support a high voltage in vacuum and in a pressurized gas. R. B. Britton, et. al., Rev. Sci. Instrum., 34 (2), Feb. 1963, 185-187. 56 : 30 877. Electronic apparatus for measuring silver layer thickness on mirrors by means of eddy currents. (U.S.S.R.) S. M. Rabinovich, Glass & Ceramics U.S.S.R., 19 (7-8), 1963, 365-368. 56 878. Thin film thermocouples for substrate temperature measurement. R. D. Morrison and R. R. Lachenmayer, Rev. Sci. Instrum., 34 (1), Jan. 1963, 106-107. 56 : 22 : 33 The origin of background current in high-frequency mass spectrometers and methods of suppression. See Abstr. 1'4o. 809. 56 : 30 The technique of depositing thin metallic films very dose to each
Thin film crytron circuits. See Abstr. No. 844. 56 : 30 Capacitance between thin film conductors deposited on substrates of high relative permittivity. See Abstr. No. 847. 56 : 30 Vapour source for vacuum deposition of super conductive thin film circuitry. See Abstr. No. 851. 56:31 Reverse-biasedp-n junctions in vacuum tubes. See Abstr. No. 852. 56 : 33 Tunnel cathode study. See Abstr. No. 857. 63 : 33 Index to the literature of magnetism (including thin films). See Abstr. No. 855. 56 : 24 High voltage vacuum feed-through. See Abstr. No. 825. 57.
Mechanical Engineering
57 : 23 Ball bearings designed to meet special application requirements (cryogenic temperature and hard vacuum conditions). See Abstr. No. 817. 57 : 23 An improved bearing arrangement for vacuum operation of the rotary condenser of a sychrocyclotron. See Abstr. No. 816.
333
Basic Science and Engineering 51.
other in a vacuum and application of the method to the manufacture of field-effect transistors. See Abstr. No. 848.
Physics, Astronomy, Geophysics 51 : 16
New theory of adhesion. See Abstr. No. 786.
56 : 30 The T.F.T., a new thin film transistor. See Abstr. No. 846.
51 : 33 Measurement of laser output by light pressure. See Abstr. No. 858.
56 : 30 Thin film transistors with metal base. See Abstr. No. 845.
52.
Physical Chemistry
52 : 41 : 33 875. Thermal re-arrangement of a perfectly ordered tungsten surface. Great Britain. Atomically smooth and almost perfectly ordered tungsten surfaces can be prepare d in the field ion microscope of field evaporation at low temperatures. Field ion micrographs, however, show that after thermal annealing, the tungsten field emitters possess a relatively disordered surface. The authors investigated this phenomena, using a field ion microscope operating at a pressure < 5 × 10 -~ torr in order to prevent contamination of the emitter surface by gas absorption. The temperature at ~which movement of surface atoms first takes place is of the order of 450°C and is not the same for all crystal planes. The surface rearrangements are probably due to atoms from the kink sites moving along the edge of the layer to other sites which act as traps, w.J.s. D. W. Bassett, Nature, 198 (4879), 4 May 1963, 468-469.
56 : 30 : 33 Pulse measurements on thin magnetic films. See Abstr. No. 843. 56 : 30 : 33 Digital thin film memories. See Abstr. No. 842. 56 : 30 Aluminized cathode ray tubes. See Abstr. No. 840. 56 : 30 Resonance technique for non-destructive readout of thin magnetic films. See Abstr. No. 837. 56 : 30 : 41 Thin film production performed continuously. See Abstr. No. 841. 56 : 47 The effects of gettering (with B203) on the forward characteristics of silicon solar calls. See Abstr. 1'4o. 874. 56 : 30
54.
Biology, Biochemistry, Pharmaceutics, Toxicology, Organic Chemistry 54 : 33
Electron microscopy. S e e Abstr. No. 867.
56.
Electrical Engineering, Electronic Circuits, Electrical Devices
56 876. Ability of voltage,graded surface to support a high voltage in vacuum and in a pressurized gas. R. B. Britton, et. al., Rev. Sci. Instrum., 34 (2), Feb. 1963, 185-187. 56 : 30 877. Electronic apparatus for measuring silver layer thickness on mirrors by means of eddy currents. (U.S.S.R.) S. M. Rabinovich, Glass & Ceramics U.S.S.R., 19 (7-8), 1963, 365-368. 56 878. Thin film thermocouples for substrate temperature measurement. R. D. Morrison and R. R. Lachenmayer, Rev. Sci. Instrum., 34 (1), Jan. 1963, 106-107. 56 : 22 : 33 The origin of background current in high-frequency mass spectrometers and methods of suppression. See Abstr. 1'4o. 809. 56 : 30 The technique of depositing thin metallic films very dose to each
Thin film crytron circuits. See Abstr. No. 844. 56 : 30 Capacitance between thin film conductors deposited on substrates of high relative permittivity. See Abstr. No. 847. 56 : 30 Vapour source for vacuum deposition of super conductive thin film circuitry. See Abstr. No. 851. 56:31 Reverse-biasedp-n junctions in vacuum tubes. See Abstr. No. 852. 56 : 33 Tunnel cathode study. See Abstr. No. 857. 63 : 33 Index to the literature of magnetism (including thin films). See Abstr. No. 855. 56 : 24 High voltage vacuum feed-through. See Abstr. No. 825. 57.
Mechanical Engineering
57 : 23 Ball bearings designed to meet special application requirements (cryogenic temperature and hard vacuum conditions). See Abstr. No. 817. 57 : 23 An improved bearing arrangement for vacuum operation of the rotary condenser of a sychrocyclotron. See Abstr. No. 816.