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The epitaxial growth of selenium thin films
Classified abstracts 613-630 30 613. A new structure in tantalum thin films. (USA) A previously unreported structure, [3 tantalum, was found in 100 to 20,000 A thick Ta films. The films were found by sputtering at a residual gas pressure of 2 × 10-e torr and a total pressure of 20 × I0 -a torr, by evaporation and by chemical vapour deposition. M H Read and C Airman, Appl Phys Letters, 7 (3), Aug 1965, 51-52. 3O 614. Epitaxial deposition of silicon by vacuum evaporation. (USA) Investigates the conditions required for epitaxial deposition by vacuum evaporation, since evaporation could be a useful alternative to the presently used chemical process, and because evaporation could be an easier approach to epitaxy on insulating and metallic substrates. Discusses the progress made and suggests improvements in technique. S Nielsen et al, Condensation and Evaporation of Solids, Gordon and
Breach (New York and London) , 1964, 685-698. 3O 615. Magnetically shaped rf discharge for polymer film formation.
( USA ) R A Connell and L V Gregor, J Electrochem Soc, 112 (12), Dec
1965, 1198-2000. 616. Better bonding methods improve hybrid circuits. Hybrid thin film circuits are made by attaching discrete components and semiconductor devices to networks of passive components and conductors that have been vacuum-deposited in glazed ceramics, sapphire or glass substrates. This construction requires microjoining techniques that make consistently reliable bonds between leads and thin films. J W Slemmons and J R Howell, Electronics, 1965, 86. 30 : 37 : 4l 617. Study of eadmium-selenide films obtained by vacuum evaporation. (USSR) The effects of various technological factors, including the substrate temperature, rate of evaporation, evaporator/substrate distance, and residual gas pressure in the vacuum system on the electrical conductivity, crystal structure, and carrier mobility in cadmium sulphide films evaporated in vacuo were studied. Glass and cleaved fluorite crystals were used as substrates, their temperature varying between 75 and 350°C. The films varied between 0.2 and 0.4 in. thickness and some were annealed in vacuo or in air before measurement. The principal results are tabulated. L V Al'tman and N D Gorbanenko, Trans LEIS Scientific-Technical
Conference, No 3, 1965, 115, (in Russian). 30 618. The preparation of high purity gallium selenide by vapour phase epitaxial growth. (Great Britain) J R Knight et al, Solid State Electronics, 8, 1965, 178-180. 3O 619. Method for vacuum deposition of cobalt metal films using graphite crucibles. (Netherlands) The high solubility of molten cobalt in other materials at elevated temperatures makes it difficult to prepare thin cobalt films by evaporation methods. The method described involves the use of carbon crucibles which have been coated with zirconium metal. A Rose, Nuclear, Instrum Methods 35 (1), 1965, 165-166. 3O 620. Lead sulphide thin film transistors. (Great Britain) Thin film transistors were prepared using evaporated PbS films. It is shown that films containing oxidized barriers to the conductivity have very little sensitivity to electric fields. (USA) W B Pennebaker, Solid State Electronics, 8, 1965, 509-515. 30 621. Protective coatings for metals. (Great Britain) Reviews different methods and applications. A W Slater, AE1Eng, 35 (2), 1965, 85-93. 30 622. Thin film integrated circuits. (Great Britain) Simple integrated electronic circuits can be formed by depositing suitably shaped films, of a few millionths of an inch thick, onto flat insulating substrates. This article reviews the available materials and techniques for depositing and shaping films. (Great Britain) P L Hawkes, AE1Eng, 35 (6), Nov~Dec 1965, 304-310. 30 623. The epitaxial growth of selenium thin films. (Great Britain) Thin films of selenium have been grown by vacuum evaporation and
deposited onto cleaved and polished faces of single crystals.
C H GritBths, Recent Advances in Selenium Physics, Pergamon Press (Oxford), 1965, 97-104. 30 624. The nucleation, growth, structure and epitaxy on thin surface films. (Great Britain) A review is given of the evidence available on the mechanism o f growth and the structure of thin deposited films. The main attention is devoted to the growth of metals onto single crystal substrates, particularly those formed by the evaporation technique. Some consideration of other types of deposit is also given, including chemically formed films and epitaxial silicon layers. D W Pashley, Advances in Phys, 14, July 1965, 327-410. 3O 625. Preparation offerrite films by evaporation. (USA) Description of results on the direct evaporation of ferrite powders in an oxygen atmosphere. A Baltz, Appl Phys Letters, 7, 1965, 10-11. 30 626. Vacuum depositing of thin films of iron in a sealed system at very low pressure. (Czechoslovakia) A vacuum of 10-11 tort was achieved in a small glass system by the use of technically pure Fe as a getter after the use of a 2-stage rotary oil pump, 3-stage oil diffusion pump, and liquid N2 traps and outgassing by heating in a furnace had lowered the pressure to 10-s torr. Evaporation by bombardment allowed a higher deposition rate o f Fe films. V Kambersky and L Laska, Czech JPhys, 15 (6), 1965, 434-435, (in
English). 30 : 33 627. Measurement of the activation energies of quench-condensed copper and indium films. (Germany) A cryostat is described which allows two films to be produced simultaneously by quenching condensation. Each film can be warmed up to any temperature between 20 and 300°K within one minute. W Sander and E Strieder, Z Phys, 188 (2), 1965, 99-107, (in
German). 30 628. Electrical properties of cadmium selenide evaporated films.
(Japan) Two kinds of electron traps in CdSe evaporated films have been revealed by electrical conductivity measurements. Shallow traps at about 0.13 eV below the conduction band are responsible for the high conductivity of the films deposited at the substrate temperature of 100°C or baked in vacuo after deposition, whereas deep traps at about 0.40 eV below the conduction band are related to the low conductivity of the films deposited at the substrate temperatures above 150°C. These traps are distributed over a wide range of energy.
(Japan) K Shimizu, JApplPhys, Japan, 4 (9), Sept 1965, 627-631. 30 629. Switching characteristics of composite magnetic thin films.
(Japan) The effects of the strong exchange coupling between magnetic spins within a composite film, composed of multiple layers of ferromagnetics, are represented by biaxial and triaxial anisotropy terms to be added to the ordinary effective magnetic energy. The influence of these multiaxial terms on the form of the critical switching curves are studied theoretically and experimentally. An experimental result is given showing a considerable improvement of the pulse coincidence switching characteristic of an ordinary uniaxially anisotropic permalloy film by adding a very thin Ni-Co alloy layer thereupon.
(Japan) E Goto et ai, J Appl Phys Japan, 4 (10), Oct 1965, 712-720. 30 630. Preparation of Ge-GaAs heterojunctions by vacuum evaporation.
(Japan). Heterojunctions have been made by depositing Ge epitaxially on GaAs substrate by vacuum evaporation. The crystalline structures are examined by electron diffraction. Some electrical and photoelectrical characteristics are investigated, which are consistent with those prepared by vapour growth. The good characteristics of heterojunction can be obtained at substrate temperatures in the vicinity of 800 °C. I Ryu and K Takahashi, J Appl Phys Japan, 4 (11), Nov 1965, 850-
853. 227
Breach (New York and London) , 1964, 685-698. 3O 615. Magnetically shaped rf discharge for polymer film formation.
( USA ) R A Connell and L V Gregor, J Electrochem Soc, 112 (12), Dec
1965, 1198-2000. 616. Better bonding methods improve hybrid circuits. Hybrid thin film circuits are made by attaching discrete components and semiconductor devices to networks of passive components and conductors that have been vacuum-deposited in glazed ceramics, sapphire or glass substrates. This construction requires microjoining techniques that make consistently reliable bonds between leads and thin films. J W Slemmons and J R Howell, Electronics, 1965, 86. 30 : 37 : 4l 617. Study of eadmium-selenide films obtained by vacuum evaporation. (USSR) The effects of various technological factors, including the substrate temperature, rate of evaporation, evaporator/substrate distance, and residual gas pressure in the vacuum system on the electrical conductivity, crystal structure, and carrier mobility in cadmium sulphide films evaporated in vacuo were studied. Glass and cleaved fluorite crystals were used as substrates, their temperature varying between 75 and 350°C. The films varied between 0.2 and 0.4 in. thickness and some were annealed in vacuo or in air before measurement. The principal results are tabulated. L V Al'tman and N D Gorbanenko, Trans LEIS Scientific-Technical
Conference, No 3, 1965, 115, (in Russian). 30 618. The preparation of high purity gallium selenide by vapour phase epitaxial growth. (Great Britain) J R Knight et al, Solid State Electronics, 8, 1965, 178-180. 3O 619. Method for vacuum deposition of cobalt metal films using graphite crucibles. (Netherlands) The high solubility of molten cobalt in other materials at elevated temperatures makes it difficult to prepare thin cobalt films by evaporation methods. The method described involves the use of carbon crucibles which have been coated with zirconium metal. A Rose, Nuclear, Instrum Methods 35 (1), 1965, 165-166. 3O 620. Lead sulphide thin film transistors. (Great Britain) Thin film transistors were prepared using evaporated PbS films. It is shown that films containing oxidized barriers to the conductivity have very little sensitivity to electric fields. (USA) W B Pennebaker, Solid State Electronics, 8, 1965, 509-515. 30 621. Protective coatings for metals. (Great Britain) Reviews different methods and applications. A W Slater, AE1Eng, 35 (2), 1965, 85-93. 30 622. Thin film integrated circuits. (Great Britain) Simple integrated electronic circuits can be formed by depositing suitably shaped films, of a few millionths of an inch thick, onto flat insulating substrates. This article reviews the available materials and techniques for depositing and shaping films. (Great Britain) P L Hawkes, AE1Eng, 35 (6), Nov~Dec 1965, 304-310. 30 623. The epitaxial growth of selenium thin films. (Great Britain) Thin films of selenium have been grown by vacuum evaporation and
deposited onto cleaved and polished faces of single crystals.
C H GritBths, Recent Advances in Selenium Physics, Pergamon Press (Oxford), 1965, 97-104. 30 624. The nucleation, growth, structure and epitaxy on thin surface films. (Great Britain) A review is given of the evidence available on the mechanism o f growth and the structure of thin deposited films. The main attention is devoted to the growth of metals onto single crystal substrates, particularly those formed by the evaporation technique. Some consideration of other types of deposit is also given, including chemically formed films and epitaxial silicon layers. D W Pashley, Advances in Phys, 14, July 1965, 327-410. 3O 625. Preparation offerrite films by evaporation. (USA) Description of results on the direct evaporation of ferrite powders in an oxygen atmosphere. A Baltz, Appl Phys Letters, 7, 1965, 10-11. 30 626. Vacuum depositing of thin films of iron in a sealed system at very low pressure. (Czechoslovakia) A vacuum of 10-11 tort was achieved in a small glass system by the use of technically pure Fe as a getter after the use of a 2-stage rotary oil pump, 3-stage oil diffusion pump, and liquid N2 traps and outgassing by heating in a furnace had lowered the pressure to 10-s torr. Evaporation by bombardment allowed a higher deposition rate o f Fe films. V Kambersky and L Laska, Czech JPhys, 15 (6), 1965, 434-435, (in
English). 30 : 33 627. Measurement of the activation energies of quench-condensed copper and indium films. (Germany) A cryostat is described which allows two films to be produced simultaneously by quenching condensation. Each film can be warmed up to any temperature between 20 and 300°K within one minute. W Sander and E Strieder, Z Phys, 188 (2), 1965, 99-107, (in
German). 30 628. Electrical properties of cadmium selenide evaporated films.
(Japan) Two kinds of electron traps in CdSe evaporated films have been revealed by electrical conductivity measurements. Shallow traps at about 0.13 eV below the conduction band are responsible for the high conductivity of the films deposited at the substrate temperature of 100°C or baked in vacuo after deposition, whereas deep traps at about 0.40 eV below the conduction band are related to the low conductivity of the films deposited at the substrate temperatures above 150°C. These traps are distributed over a wide range of energy.
(Japan) K Shimizu, JApplPhys, Japan, 4 (9), Sept 1965, 627-631. 30 629. Switching characteristics of composite magnetic thin films.
(Japan) The effects of the strong exchange coupling between magnetic spins within a composite film, composed of multiple layers of ferromagnetics, are represented by biaxial and triaxial anisotropy terms to be added to the ordinary effective magnetic energy. The influence of these multiaxial terms on the form of the critical switching curves are studied theoretically and experimentally. An experimental result is given showing a considerable improvement of the pulse coincidence switching characteristic of an ordinary uniaxially anisotropic permalloy film by adding a very thin Ni-Co alloy layer thereupon.
(Japan) E Goto et ai, J Appl Phys Japan, 4 (10), Oct 1965, 712-720. 30 630. Preparation of Ge-GaAs heterojunctions by vacuum evaporation.
(Japan). Heterojunctions have been made by depositing Ge epitaxially on GaAs substrate by vacuum evaporation. The crystalline structures are examined by electron diffraction. Some electrical and photoelectrical characteristics are investigated, which are consistent with those prepared by vapour growth. The good characteristics of heterojunction can be obtained at substrate temperatures in the vicinity of 800 °C. I Ryu and K Takahashi, J Appl Phys Japan, 4 (11), Nov 1965, 850-
853. 227