- Email: [email protected]
The first European GaN workshop (EGW-1)
The First European
GaN Workshop (EGW-1) Toby S t r i t e - EGW-1 Co-Chairman
The past several years have seen GaN move from a research topic to a major segment of the worldwide compound semiconductormarket. The booming interest in GaN has been driven by the development of Candela class blue, blue-green, and now green commercial LEDs which have rapidly replaced entrenched SiC- and GaP-based LED technologies, and promise to dramatically grow the whole LED market enabling bright, full colour, large area LED displays, and LED-based traffic signals. he GaN fever grew white hot w i t h t h e D e c e m b e r ann o u n c e m e n t by Nichia Chemical of a GaN-based diode laser, w h i c h is the shortest wavelength semiconductor laser ever made, and is e x p e c t e d to profoundly impact optical storage applications. EGW-1 will b e the first major meeting on European soil dedicated to GaN and its alloys with InN and AIN. The organizers take the c o n c e p t of a w o r k s h o p very seriously and intend to p r o m o t e an open, friendly atmosphere conducive to the free e x c h a n g e o f information and the formation o f future collaborations. This is important because European GaN researchers have recently converged from many diverse fields and have not yet had the opportunity to m e e t their colleagues in a European setting. These goals influenced the selection of Rigi, a mountaintop village in the Swiss Alps near Luzern, w h e r e the attendees will share a single hotel and all meals during the conference. Participants will be limited to 100 persons, but an invitation is guaranteed to at least one representative of any E u r o p e a n i n s t i t u t i o n w h i c h wishes to attend. A single session is planned throughout, c o m p o s e d o f papers limited to 5 - 10 mill each, with each set immediately followed by an o p e n panel discussion. This insures that each participant can hear and c o m m e n t on every submission.
T
EGW-1 is being organized in coo p e r a t i o n w i t h the Materials Research Society Internet Journal of Nitride S e m i c o n d u c t o r R e s e a r c h (http://nsr.mij.mrs.org), a new electronic jottmal specializing in the GaN field, which will publish the workshop proceedings at a significant discount to normal journal rates. The MIJ-NSR will be on site in Rigi to provide assistance and instruction to a t t e n d e e s i n t e r e s t e d in rapid, paperless dissemination of their results. This collaboration has also enabled EGW-1 to accept electronic submi~ion of camera ready abstracts, as b o t h a convenience, and a first step to submitting the full work to MIJ-NSlL EGW-1 is also cooperating with the European MRS, which is hosting a special session on GaN immediately following the workshop. The organizers have invited two p r o m i n e n t GaN r e s e a r c h e r s from
0961-1290/96/$15.00 ©1996 Elsevier Science Ltd. Page 49
Vol 9 No 1
outside of Europe to present their results. Prof. Robert Davis o f North Carolina State University will describe his group's leading w o r k o n AIGaN alloys, especially in increasing the doping levels to r e d u c e device operating voltages. Dr. Vlaclimir Dmitriev o f Cree Research will present his company's commercial GaN/SiC LED technology. The meeting runs two full days from Sunday evening until Tuesday afternoon. Guests will be greeted at an opening r e c e p t i o n w h i c h will include an o p e n bar and traditional Swiss music. A vendor exhibition will run concurrently to the technical program o n both Monday and Tuesday. After a full day of papers on Monday, the participants will reconvene after dinner for a GaN Rump Session which is anticipated to be lively, not the least for the free drinks which will be available. EGW-I closes on Tuesday afternoon, early enough to permit participants to m e e t their c o n n e c t i n g trains. Toby Strite, IBM Zurich Research Laboratory, Saumerstrasse 4, CH-8803 Rueschlikon, Switzerlana~ Tel: + 41-1- 724-82-03. Fax: + 41-1-724-17-89. WWW.. htlp:// www.zurich.ibrr~com/~srt Email: [email protected]~com
GaN Workshop (EGW-1) Toby S t r i t e - EGW-1 Co-Chairman
The past several years have seen GaN move from a research topic to a major segment of the worldwide compound semiconductormarket. The booming interest in GaN has been driven by the development of Candela class blue, blue-green, and now green commercial LEDs which have rapidly replaced entrenched SiC- and GaP-based LED technologies, and promise to dramatically grow the whole LED market enabling bright, full colour, large area LED displays, and LED-based traffic signals. he GaN fever grew white hot w i t h t h e D e c e m b e r ann o u n c e m e n t by Nichia Chemical of a GaN-based diode laser, w h i c h is the shortest wavelength semiconductor laser ever made, and is e x p e c t e d to profoundly impact optical storage applications. EGW-1 will b e the first major meeting on European soil dedicated to GaN and its alloys with InN and AIN. The organizers take the c o n c e p t of a w o r k s h o p very seriously and intend to p r o m o t e an open, friendly atmosphere conducive to the free e x c h a n g e o f information and the formation o f future collaborations. This is important because European GaN researchers have recently converged from many diverse fields and have not yet had the opportunity to m e e t their colleagues in a European setting. These goals influenced the selection of Rigi, a mountaintop village in the Swiss Alps near Luzern, w h e r e the attendees will share a single hotel and all meals during the conference. Participants will be limited to 100 persons, but an invitation is guaranteed to at least one representative of any E u r o p e a n i n s t i t u t i o n w h i c h wishes to attend. A single session is planned throughout, c o m p o s e d o f papers limited to 5 - 10 mill each, with each set immediately followed by an o p e n panel discussion. This insures that each participant can hear and c o m m e n t on every submission.
T
EGW-1 is being organized in coo p e r a t i o n w i t h the Materials Research Society Internet Journal of Nitride S e m i c o n d u c t o r R e s e a r c h (http://nsr.mij.mrs.org), a new electronic jottmal specializing in the GaN field, which will publish the workshop proceedings at a significant discount to normal journal rates. The MIJ-NSR will be on site in Rigi to provide assistance and instruction to a t t e n d e e s i n t e r e s t e d in rapid, paperless dissemination of their results. This collaboration has also enabled EGW-1 to accept electronic submi~ion of camera ready abstracts, as b o t h a convenience, and a first step to submitting the full work to MIJ-NSlL EGW-1 is also cooperating with the European MRS, which is hosting a special session on GaN immediately following the workshop. The organizers have invited two p r o m i n e n t GaN r e s e a r c h e r s from
0961-1290/96/$15.00 ©1996 Elsevier Science Ltd. Page 49
Vol 9 No 1
outside of Europe to present their results. Prof. Robert Davis o f North Carolina State University will describe his group's leading w o r k o n AIGaN alloys, especially in increasing the doping levels to r e d u c e device operating voltages. Dr. Vlaclimir Dmitriev o f Cree Research will present his company's commercial GaN/SiC LED technology. The meeting runs two full days from Sunday evening until Tuesday afternoon. Guests will be greeted at an opening r e c e p t i o n w h i c h will include an o p e n bar and traditional Swiss music. A vendor exhibition will run concurrently to the technical program o n both Monday and Tuesday. After a full day of papers on Monday, the participants will reconvene after dinner for a GaN Rump Session which is anticipated to be lively, not the least for the free drinks which will be available. EGW-I closes on Tuesday afternoon, early enough to permit participants to m e e t their c o n n e c t i n g trains. Toby Strite, IBM Zurich Research Laboratory, Saumerstrasse 4, CH-8803 Rueschlikon, Switzerlana~ Tel: + 41-1- 724-82-03. Fax: + 41-1-724-17-89. WWW.. htlp:// www.zurich.ibrr~com/~srt Email: [email protected]~com