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The first stages of the formation of the interface between gold and silicon (100) at room temperature
A607 Surface Science 162 (1985) 617-621 North-Holland, Amsterdam
617
T H E FORMATION OF T H E G a - l n P ( 1 0 0 ) INTERFACE F. H O U Z A Y , M . B E N S O U S S A N , C. G U I L L E a n d F. B A R T H E CNET, Laboratoire de Bagneux, 196 Rue de Paris, F-92230 Bagneux, France Received 1 April 1985; accepted for publication 30 April 1985 The investigation by LEED, RHEED, TEM, AES, UPS and XPS of the early stages of the formation of the Ga-InP(100) interface is reported. From low coverages, a G a - l n exchange reaction takes place releasing metallic In. From 10 ML, this process slows down notably and the growth of 3D liquid or amorphous metallic Ga islands is clearly observed.
622 COMBINED
Surface Science 162 (1985) 622-627 North-Holland, Amsterdam AES, LEED,
SEM
AND TEM
CHARACTERIZATIONS
OF
Cu-Si(100) INTERFACES M. HANBUCKEN
* a n d J.J. M I ~ T O I S
CRMC :, CNRS, Case 913, Campus de Luminy, F-13288 Marseille Cbdex 09, France and P. M A T H I E Z
a n d F. S A L V A N
UA CNRS 783, Dbpartement de Physique, Case 90l, Facultb des Sciences de Luminy, F-13288 Marseille Cbdex 09, France Received 1 April 1985; accepted for publication 30 May 1985 Cu-Si(100) interfaces prepared under UHV at different substrate temperatures (Ts) have been characterized using in-situ Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) as well as ex-situ scanning and transmission electron microscopy (SEM, TEM). At room temperature (RT), the film grows in a layer by layer like mode. With increasing Ts, the intensity of the Cu M2.3W (61 eV) Auger transition decreases and at 7~ = 500°C no Cu Auger signal could be measured below 0 - 100. Yet SEM and TEM observations of these deposits show islands in epitaxial relation with the substrate. It can be determined from TEM images that these islands are covered with a Si skin ( - 50 A thick) and that they are deeply implanted in the Si substrate. This explains the AES measurements.
628
Surface Science 162 (1985) 628-633 North-Holland, Amsterdam
THE FIRST STAGES OF THE BETWEEN GOLD AND SILICON M. HANBUCKEN
FORMATION O F T H E INTERFACE (100) AT ROOM TEMPERATURE
*, Z . I M A M , J. J. M I ~ T O I S a n d G . L E L A Y *
CRMC 2 CNRS, Case 913, Campus de Luminy, F-13288 Marseille Cbdex 09, France Received 1 April 1985; accepted for publication 4 April 1985
A608 The formation of the Au-Si(lll) interface has been studied through many different approaches. Although of higher technical importance the Au-Si(100) interface has received much less attention, especially in the early stages of its formation. We present a detailed study of this system at RT in the low coverage region, from zero to a few monolayers, using LEED, AES and transmission electron microscopy. The discussion of the experimental results is focussed on the onset of the intermixing reaction.
634
Surface Science 162 (1985) 634-639 North-Holland, Amsterdam
Au / Si(111 ) OVERLAYER: MICROSCOPY
CHARACTERIZATION AND SPECTROSCOPY
BY TUNNELING
F. S A L V A N UA CNRS 783, Dbpartement de Physique, Case 901, Facultb des Sciences de Luminy, F-13288 Marseille Cbdex 09, France and H. F U C H S
*, A. B A R A T O F F
a n d G. B I N N I G
IBM Zurich Research Laboratory, CH-8803 R~schlikon, Switzerland Received 1 April 1985; accepted for publication 10 May 1985 Together with LEED and Auger spectroscopy, Scanning Tunneling Microscopy (STM) and Tunneling Spectroscopy (TS) have been used to characterize about 1 monolayer of Au deposited on a 7 x 7 Si(lll) surface and annealed at 600°C. A f 3 x 7'3R(30 °) LEED pattern was observed, whereas STM revealed a 6 x 6 superstructure locally. TS showed strong characteristic resonances in the field-emission range together with a pronounced empty surface state 1 eV above the Fermi level.
640
Surface Science 162 (1985) 640-644 North-Holland, Amsterdam
CONSTANT EMISSION RATE AND CONSTANT CAPTURE CAPACITANCE SPECTROSCOPIES APPLIED TO THE DETERMINATION LOCALIZED P. M U R E T
OF THE PROPERTIES
AT Ag/Si
AND Au/Si
RATE
OF THE STATES
INTERFACES
a n d A. D E N E U V I L L E
LEPES, CNRS, BP 166 X, F-38042 Grenoble Cbdex, France Received 1 April 1985; accepted for publication 22 April 1985 The charge trapped in interface states localized at metal-semiconductor contacts can be varied by means of capture and emission processes controlled by forward bias voltage, frequency and temperature. A corresponding capacitance is detected. Typical results are shown for Ag/Si and Au/Si samples, when the constant capture rate method is used and are compared to those obtained from the constant emission rate method. Both appear to be complementary.
617
T H E FORMATION OF T H E G a - l n P ( 1 0 0 ) INTERFACE F. H O U Z A Y , M . B E N S O U S S A N , C. G U I L L E a n d F. B A R T H E CNET, Laboratoire de Bagneux, 196 Rue de Paris, F-92230 Bagneux, France Received 1 April 1985; accepted for publication 30 April 1985 The investigation by LEED, RHEED, TEM, AES, UPS and XPS of the early stages of the formation of the Ga-InP(100) interface is reported. From low coverages, a G a - l n exchange reaction takes place releasing metallic In. From 10 ML, this process slows down notably and the growth of 3D liquid or amorphous metallic Ga islands is clearly observed.
622 COMBINED
Surface Science 162 (1985) 622-627 North-Holland, Amsterdam AES, LEED,
SEM
AND TEM
CHARACTERIZATIONS
OF
Cu-Si(100) INTERFACES M. HANBUCKEN
* a n d J.J. M I ~ T O I S
CRMC :, CNRS, Case 913, Campus de Luminy, F-13288 Marseille Cbdex 09, France and P. M A T H I E Z
a n d F. S A L V A N
UA CNRS 783, Dbpartement de Physique, Case 90l, Facultb des Sciences de Luminy, F-13288 Marseille Cbdex 09, France Received 1 April 1985; accepted for publication 30 May 1985 Cu-Si(100) interfaces prepared under UHV at different substrate temperatures (Ts) have been characterized using in-situ Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) as well as ex-situ scanning and transmission electron microscopy (SEM, TEM). At room temperature (RT), the film grows in a layer by layer like mode. With increasing Ts, the intensity of the Cu M2.3W (61 eV) Auger transition decreases and at 7~ = 500°C no Cu Auger signal could be measured below 0 - 100. Yet SEM and TEM observations of these deposits show islands in epitaxial relation with the substrate. It can be determined from TEM images that these islands are covered with a Si skin ( - 50 A thick) and that they are deeply implanted in the Si substrate. This explains the AES measurements.
628
Surface Science 162 (1985) 628-633 North-Holland, Amsterdam
THE FIRST STAGES OF THE BETWEEN GOLD AND SILICON M. HANBUCKEN
FORMATION O F T H E INTERFACE (100) AT ROOM TEMPERATURE
*, Z . I M A M , J. J. M I ~ T O I S a n d G . L E L A Y *
CRMC 2 CNRS, Case 913, Campus de Luminy, F-13288 Marseille Cbdex 09, France Received 1 April 1985; accepted for publication 4 April 1985
A608 The formation of the Au-Si(lll) interface has been studied through many different approaches. Although of higher technical importance the Au-Si(100) interface has received much less attention, especially in the early stages of its formation. We present a detailed study of this system at RT in the low coverage region, from zero to a few monolayers, using LEED, AES and transmission electron microscopy. The discussion of the experimental results is focussed on the onset of the intermixing reaction.
634
Surface Science 162 (1985) 634-639 North-Holland, Amsterdam
Au / Si(111 ) OVERLAYER: MICROSCOPY
CHARACTERIZATION AND SPECTROSCOPY
BY TUNNELING
F. S A L V A N UA CNRS 783, Dbpartement de Physique, Case 901, Facultb des Sciences de Luminy, F-13288 Marseille Cbdex 09, France and H. F U C H S
*, A. B A R A T O F F
a n d G. B I N N I G
IBM Zurich Research Laboratory, CH-8803 R~schlikon, Switzerland Received 1 April 1985; accepted for publication 10 May 1985 Together with LEED and Auger spectroscopy, Scanning Tunneling Microscopy (STM) and Tunneling Spectroscopy (TS) have been used to characterize about 1 monolayer of Au deposited on a 7 x 7 Si(lll) surface and annealed at 600°C. A f 3 x 7'3R(30 °) LEED pattern was observed, whereas STM revealed a 6 x 6 superstructure locally. TS showed strong characteristic resonances in the field-emission range together with a pronounced empty surface state 1 eV above the Fermi level.
640
Surface Science 162 (1985) 640-644 North-Holland, Amsterdam
CONSTANT EMISSION RATE AND CONSTANT CAPTURE CAPACITANCE SPECTROSCOPIES APPLIED TO THE DETERMINATION LOCALIZED P. M U R E T
OF THE PROPERTIES
AT Ag/Si
AND Au/Si
RATE
OF THE STATES
INTERFACES
a n d A. D E N E U V I L L E
LEPES, CNRS, BP 166 X, F-38042 Grenoble Cbdex, France Received 1 April 1985; accepted for publication 22 April 1985 The charge trapped in interface states localized at metal-semiconductor contacts can be varied by means of capture and emission processes controlled by forward bias voltage, frequency and temperature. A corresponding capacitance is detected. Typical results are shown for Ag/Si and Au/Si samples, when the constant capture rate method is used and are compared to those obtained from the constant emission rate method. Both appear to be complementary.