The interaction of hydrogen atoms and molecules with nickel films

The interaction of hydrogen atoms and molecules with nickel films

Classified abstracts 297--302 The results are in good agreement with published experimental values. H Hoffman, Phys Status Solidi, 7 (2), 1964, 383-39...

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Classified abstracts 297--302 The results are in good agreement with published experimental values. H Hoffman, Phys Status Solidi, 7 (2), 1964, 383-398. 33 : 41 297. Cleavage in high vacuums of alkali halide single crystals-seeondary electron emission. (USA) Maximum secondary electron emission yields from cleaved crystals were generally high and did not deteriorate rapidly whilst kept in vacuum after cleavage. Representation values ranged from NaBr (23) to LiE (7). The most probable energy of the secondary electrons from KCC is of the order of IeV. N R Whetten, JApplPhys, 35 (11), 1964, 3279-3282. 33 : 41 298. Shape and energy of N~el walls in very thin ferromagnetic films.

system. Although both types of still produced zinc of the required degree of purity (practical total elimination of Cd and Pb), the installation with the bubble plates is the more efficient, (USSR) V N Cherniaev and S A Ershova, Zh prik Khimii, 37 (11), 1964,

2407-2414 (in Russian).

IV. Materials and techniques used in vacuum technology 40. Gases and vapours 40

(USA)

Diffusion of Krypton-85 in multicomponent mixtures of Krypton

Closer study has shown that the N6el walls separating anti-parallel domains in very thin ferromagnetic films differ significantly from the shape originally used by N6el. The walls extend up to several microns into each of the adjacent domains for films 200 A_ thick. The energy stored in this new configuration is appreciably less than assumed originally. R Collette, JApplPhys, 35 (11), 1964, 3294-3301.

with He, Ne, Ar and Xe. See abstract number 208.

34. High altitude and space technology 34 : 33

299. Radiation damage in body-centred metals.

(USA)

The effect of prolonged irradiation of Mo and W on their physical properties is reviewed, particular attention being paid to the recovery after low temperature exposure. This recovery appears to take place in three stages, the first being due to interstitial migration, the second due to release of trapped interstitials and the last to vacancy migration. M W Thompson, Radiation Damage in Solids, Academic Press,

1962, 753-762.

37. Metallurgy, inorganic chemistry, analytical chemistry 37 A review of the growth and structure of thin films of germanium and silicon. See abstract number 285. 37 : 41 300. Spontaneous purification of metals from oxide films. (USSR) It is claimed that samples of carbon steel or chromium nickel steel placed in a sealed container of the same material and heated to 1000-1300°C for relatively short periods of less than an hour, are freed from all oxide surface films. During the heating the air pressure in the container first rises and then falls to a steady terminal value of the order of 1 torr. The process is attributed to a decrease in the energy of the oxides and nitrides with rising temperatures whilst the solubility of oxygen and nitrogen in the molten metal increases. The need for further experiments is stressed. (USSR) B E Paton et al, Proc Acad Sciences, 159 (1), 1964, 72-73 (in

Russian). 301. Vacuum

electric

furnace

for

37 semi-continuous operation.

(USSR) The furnace has been designed for the vacuum annealing of tantalum strip at 10 -5 torr and 1800°C. Dimensions of furnace: width 2930 mm; depth 5700 mm; height 5760 ram. Power consumption 67 kW; cooling water consumption 0.8 m3/h; max. vacuum 10 5 torr. The vacuum system of the furnace ensures continuous high vacuum in the heating and cooling compartments. The loading chamber is pumped out periodically. Capacity 60 kg of strip in 24hours. ( USSR) Anon, Electro-Thermic Science, 39, 1964, 3 (in Russian).

38. Distillation, organic chemistry, isotopic gas analysis 38 : 41 302. High grade purification of zinc. (USSR) Experiments were carried out with two different types of fractionating columns. The first had 15 plates of graphite (shelf type) placed in a cylindrical metal container, whilst the second was made entirely of quartz and was fitted with 8 plates of the bubble type. The distillation pressure ranged from 10 -2 to 10 4 torr in either

4O Influence of metastable molecules on static breakdown in nitrogen at low pressure. See abstract number 243.

41. Metals and alloys 41 Adsorption of caesium on polycrystalline refractory metals. See abstract number 216. 41 Low energy diffraction study of CO adsorption on the (100') face of platinum. See abstract number 223. 41 Surface states on clean silicon. See abstract number 224. 41 The interaction of hydrogen atoms and molecules with nickel films. See abstract number 226. 41 Adsorption of oxygen on the (111), (100) and (110) surfaces of clean nickel. See abstl act No. 227. 41 Mass spectrometric investigation of oxygen desorption from tungsten. See abstract number 230. 41 Optical coefficients of thin Cr films obtained by thermal evaporation in vacuum. See abstract number 250. 4l The heating in vacuum of silicon substrates to temperatures greater than 800aC. See abstract number 268. 41 Investigation of oxidation and evaporation of resistance alloys in vacuum. See abstract number 270. 41 Investigation of the BiO system by electron diffraction. See abstract number 271. 41 Use of the phenomenon of positive surface ionization in the study of cathodic sputtering of metals. See abstract number 273. 41 The influence of impurity concentration and temperature treatment on the surface structure of polycrystalline films of selenium. See abstract number 274. 41 Thin films of niobium-tin by co-deposition. See abstract number 275. 41 Studies of monolayers of lead and tin on Si (111) surface. See abstract number 278. 41 Condensation of gold on gold single crystals. See abstract number 279. 41 The thermal arrangement of field evaporated iridium surfaces. See abstract number 280. 41 Flash evaporation for thin film deposition. See abstract number 281. 41 Electron microscope study of vacuum deposited copper. See abstract number 282. 41 Fibred and epitaxial growth in sputtered films of GaAs. See abstract number 283. 165