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The modeling of multi-layer structures and the impact of emitter-base coupling on the determination of base recombination parameters
298
World Abstracts on Microelectronics and Reliability
initial conditions makes the program easy to use, even for those with no previous experience with Pearson functions or the curve-fitting processes.
The modeling of multi-layer structures and the impact of emitter-base coupling on the determination of base recombination parameters. M. A. NEWHOUSEand M. WOLF. Solid-St. Electron. 33(9), 1113 (1990). A method is presented to analyze minority carrier decay in multi-layer semiconductor structures. Open circuit voltage decay measurements analyzed using the junction open circuit boundary condition are used to measure the recombination parameters of base layers of semiconductor pn junction devices. The junction open circuit boundary condition assumes the independence of the minority carrier decay in the base and emitter layers. With the multi-layer decay analysis a theoretical investigation of the experimentally achievable device open circuit continuity condition, which includes the coupling of the base and emitter minority carrier decays, is possible. The analysis shows that the device open circuit continuity condition yields different decay constants than would be calculated using the junction open circuit boundary condition, due to the influence of the emitter recombination parameters. Carrier decay under short circuit conditions is much less influenced by the emitter. Therefore, as the emitter recombination parameters are usually unknown, the most accurate measurement of the base recombination parameters will be obtained using measurements made under short circuit rather than open circuit conditions. Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology. P. RATNAMand A. NAEM. Solid-St. Electron. 33(9), 1163 (1990). This paper presents two novel hot-carrier-resistant device structures, namely the concave DDD (CDDD) and the concave LDD (CLDD). These device structures make use of concave silicon surfaces created by the LOCOS process. A computer analysis is carried out to verify the hot-electron-resistant behavior of these devices. It is found that a concave silicon surface adds to the flexibility of designing both DDD and LDD devices. Electrical inhomogeneity in alloyed AuGe-Ni contact formed on GaAs. M. KAMADA,T. SUZUKI,K. TAIRAand M. ARM. Solid-St. Electron. 33(8), 999 (1990). Electrical properties of alloyed AuGe-Ni contacts to p-type GaAs were investigated and analyzed as a means to investigate the nature of alloyed AuGe-Ni contacts to n-type GaAs. Experimental results on the p-type GaAs were analyzed with a parallel-contact model: the contact is composed of two kinds of areas with different properties. The barrier height of the alloyed junction obtained from the current-voltage relation was 0.64 eV,
8. T H I C K -
AND
THIN-FILM
COMPONENTS,
Ag-Pd thick film conductor for AIN ceramics. YASUTOSHI KURlHARAet al. IEEE Trans. Compon. Hybrids mfg Technoi. 13(2), 306 (1990). An Ag-Pd thick film conductor for aluminum nitride (A1N) ceramics was developed. The conductor showed adhesion strength and reliability, which were almost comparable to those of commercial conductors for alumina ceramics. Influence of physical properties of the lead oxide glass flit on conductor performance was studied, and the most suitable glass was selected for the frit material. The softening point of flit glass had the largest effect on conductor performance and this temperature should be approximately 500°C. If the softening point was either too high or too low, compared with the sintering temperature of the conducting metals, poor adhesion strength resulted. Use of glass with too high a softening point caused poor wettability but resistance to erosion by Pb-Sn solder, while it resulted in good wettability but poor erosion resistance
while that obtained from the capacitance-voltage relation was I. 1 eV. We explain the discrepancy by assuming that the contact area is composed of about 84% n +p junction with a barrier height of 1.42 eV and about 16% Schottky junction with a barrier height of 0.65 eV. We conclude that the AuGe-Ni contacts to n-GaAs also have the mixed structure, composed of about 84% of n +n contact and about 16% of the Schottky contact.
Point defect populations in amorphous anti crystalline silicon. S. ROORDA et al. Solid St. Commun. 75(3), 197 (1990). Crystalline Si (c-Si) and relaxed amorphous Si (a-Si) have been ion-bombarded. The kinetics and temperature dependence of the heat released on annealing of these materials are found to be qualitatively similar for temperatures lower than epitaxial crystallization temperatures (550°C). This behavior suggests a close similarity between the mechanisms of structural relaxation in a-Si and defect annihilation in c-Si. The heat release measurements imply that ion bombardment generates a variety of point defects in both a-Si and c-Si. Ultra-thin dielectrics for semiconductor applications--growth and characteristics. H. B. HARRISONand S. DIMITRIJEV. Microelectron. J. 22(2), 3 (1991). As the physical dimensions of integrated circuit devices decrease, the resultant dielectric thickness also decreases. However, with this reduction in thickness, particularly in the sub-15 nm region, there are a number of undesirable physical and electrical effects associated with conventional silicon dioxide films. This paper considers the growth kinetics and resultant characteristics of such thin oxides as well as possible replacements by way of oxynitrides or nitrides. A comparison is made of each type of dielectric and their applicability to future semiconductor processing. Modelling of epitaxiai growth rate of silicon by vapour phase epitaxy. A. N. DAW, D. K. PAL and M. K. KOWAR. Microelectron. J. 21(5), 29 (1990). A growth model based on chemical kinetics for vapour phase epitaxy of silicon by pyrolysis of silane (Sill 4) in a horizontal rectangular reactor at atmospheric pressure has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters such as temperature, flow rate, mole fraction, position and angle of tilt. The model has been tested against such experimental data as are available in the literature and satisfactory agreement has been observed. An interesting feature of the model is that it predicts the growth rate to be fairly independent of the position of the susceptor within the reactor when the angle of tilt is 1.5°. The model has been coded in a simple computer program.
HYBRID
CIRCUITS
AND
MATERIALS
when the softening point was too low. Additionally, Cr-, Ti-, and Zr-oxides were identified as wettability promoting agents. The molten glass did not penetrate into the A1N ceramics, rather it remained on the surface. This behavior differed from that in the case of alumina ceramics, for which the molten glass penetrated along the grain boundaries.
Benzocyciobutene interlayer dielectrics for thin film multichip modules. R. WAYNEJOHNSONet al. IEEE Trans. Compon. Hybrids mfg TechnoL 13(2), 347 (1990). A new organic dielectric derived from benzocyclobutene has been investigated as an interlayer dielectric for thin film multichip modules. The material is processed using standard semiconductor techniques. Key attributes of the polymer are: a low dielectric constant (2.7), low moisture absorption (0.2~).3%), low processing temperature (250°C),
World Abstracts on Microelectronics and Reliability
initial conditions makes the program easy to use, even for those with no previous experience with Pearson functions or the curve-fitting processes.
The modeling of multi-layer structures and the impact of emitter-base coupling on the determination of base recombination parameters. M. A. NEWHOUSEand M. WOLF. Solid-St. Electron. 33(9), 1113 (1990). A method is presented to analyze minority carrier decay in multi-layer semiconductor structures. Open circuit voltage decay measurements analyzed using the junction open circuit boundary condition are used to measure the recombination parameters of base layers of semiconductor pn junction devices. The junction open circuit boundary condition assumes the independence of the minority carrier decay in the base and emitter layers. With the multi-layer decay analysis a theoretical investigation of the experimentally achievable device open circuit continuity condition, which includes the coupling of the base and emitter minority carrier decays, is possible. The analysis shows that the device open circuit continuity condition yields different decay constants than would be calculated using the junction open circuit boundary condition, due to the influence of the emitter recombination parameters. Carrier decay under short circuit conditions is much less influenced by the emitter. Therefore, as the emitter recombination parameters are usually unknown, the most accurate measurement of the base recombination parameters will be obtained using measurements made under short circuit rather than open circuit conditions. Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology. P. RATNAMand A. NAEM. Solid-St. Electron. 33(9), 1163 (1990). This paper presents two novel hot-carrier-resistant device structures, namely the concave DDD (CDDD) and the concave LDD (CLDD). These device structures make use of concave silicon surfaces created by the LOCOS process. A computer analysis is carried out to verify the hot-electron-resistant behavior of these devices. It is found that a concave silicon surface adds to the flexibility of designing both DDD and LDD devices. Electrical inhomogeneity in alloyed AuGe-Ni contact formed on GaAs. M. KAMADA,T. SUZUKI,K. TAIRAand M. ARM. Solid-St. Electron. 33(8), 999 (1990). Electrical properties of alloyed AuGe-Ni contacts to p-type GaAs were investigated and analyzed as a means to investigate the nature of alloyed AuGe-Ni contacts to n-type GaAs. Experimental results on the p-type GaAs were analyzed with a parallel-contact model: the contact is composed of two kinds of areas with different properties. The barrier height of the alloyed junction obtained from the current-voltage relation was 0.64 eV,
8. T H I C K -
AND
THIN-FILM
COMPONENTS,
Ag-Pd thick film conductor for AIN ceramics. YASUTOSHI KURlHARAet al. IEEE Trans. Compon. Hybrids mfg Technoi. 13(2), 306 (1990). An Ag-Pd thick film conductor for aluminum nitride (A1N) ceramics was developed. The conductor showed adhesion strength and reliability, which were almost comparable to those of commercial conductors for alumina ceramics. Influence of physical properties of the lead oxide glass flit on conductor performance was studied, and the most suitable glass was selected for the frit material. The softening point of flit glass had the largest effect on conductor performance and this temperature should be approximately 500°C. If the softening point was either too high or too low, compared with the sintering temperature of the conducting metals, poor adhesion strength resulted. Use of glass with too high a softening point caused poor wettability but resistance to erosion by Pb-Sn solder, while it resulted in good wettability but poor erosion resistance
while that obtained from the capacitance-voltage relation was I. 1 eV. We explain the discrepancy by assuming that the contact area is composed of about 84% n +p junction with a barrier height of 1.42 eV and about 16% Schottky junction with a barrier height of 0.65 eV. We conclude that the AuGe-Ni contacts to n-GaAs also have the mixed structure, composed of about 84% of n +n contact and about 16% of the Schottky contact.
Point defect populations in amorphous anti crystalline silicon. S. ROORDA et al. Solid St. Commun. 75(3), 197 (1990). Crystalline Si (c-Si) and relaxed amorphous Si (a-Si) have been ion-bombarded. The kinetics and temperature dependence of the heat released on annealing of these materials are found to be qualitatively similar for temperatures lower than epitaxial crystallization temperatures (550°C). This behavior suggests a close similarity between the mechanisms of structural relaxation in a-Si and defect annihilation in c-Si. The heat release measurements imply that ion bombardment generates a variety of point defects in both a-Si and c-Si. Ultra-thin dielectrics for semiconductor applications--growth and characteristics. H. B. HARRISONand S. DIMITRIJEV. Microelectron. J. 22(2), 3 (1991). As the physical dimensions of integrated circuit devices decrease, the resultant dielectric thickness also decreases. However, with this reduction in thickness, particularly in the sub-15 nm region, there are a number of undesirable physical and electrical effects associated with conventional silicon dioxide films. This paper considers the growth kinetics and resultant characteristics of such thin oxides as well as possible replacements by way of oxynitrides or nitrides. A comparison is made of each type of dielectric and their applicability to future semiconductor processing. Modelling of epitaxiai growth rate of silicon by vapour phase epitaxy. A. N. DAW, D. K. PAL and M. K. KOWAR. Microelectron. J. 21(5), 29 (1990). A growth model based on chemical kinetics for vapour phase epitaxy of silicon by pyrolysis of silane (Sill 4) in a horizontal rectangular reactor at atmospheric pressure has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters such as temperature, flow rate, mole fraction, position and angle of tilt. The model has been tested against such experimental data as are available in the literature and satisfactory agreement has been observed. An interesting feature of the model is that it predicts the growth rate to be fairly independent of the position of the susceptor within the reactor when the angle of tilt is 1.5°. The model has been coded in a simple computer program.
HYBRID
CIRCUITS
AND
MATERIALS
when the softening point was too low. Additionally, Cr-, Ti-, and Zr-oxides were identified as wettability promoting agents. The molten glass did not penetrate into the A1N ceramics, rather it remained on the surface. This behavior differed from that in the case of alumina ceramics, for which the molten glass penetrated along the grain boundaries.
Benzocyciobutene interlayer dielectrics for thin film multichip modules. R. WAYNEJOHNSONet al. IEEE Trans. Compon. Hybrids mfg TechnoL 13(2), 347 (1990). A new organic dielectric derived from benzocyclobutene has been investigated as an interlayer dielectric for thin film multichip modules. The material is processed using standard semiconductor techniques. Key attributes of the polymer are: a low dielectric constant (2.7), low moisture absorption (0.2~).3%), low processing temperature (250°C),