- Email: [email protected]
The residual gases and vacuum deposited 20KÅ thick Al films
130
WORLD
ABSTRACTS
ON M I C R O E L E C T R O N I C S
intermetallics were determined indirectly by measuring the tensile properties of the diffused couples. It was found that all the intermetaUics were stronger than gold or aluminum. However, appreciable voiding occurred in AusAl 2 after long times above 300°C and in AuAI~ after long times above 400°C weakening these phases catastrophically. The voiding was greatly accelerated by intermittent aging.
Limitations of the MIS capacitance m e t h o d resulting from s e m i c o n d u c t o r properties. E. R. LXNDNER, Solid-State Electron. 13 (1970), p. 1597. T h e influence of doping profiles, traps and grain boundaries in the semiconductor on the C - V characteristics of ideal
8. T H I C K A N D T H I N
AND
RELIABILITY
M I S diodes is calculated. In addition, it is shown that losses and frequency dispersion as well as hysteresis effects can result from traps in the semiconductor. If these semiconductor properties are ignored misinterpretations in terms of interface state density will arise which can be about 101~ cm -2. In the case of decreasing doping profiles and traps in a n-type semiconductor one will get an apparent positive surface charge while an apparent negative surface charge will result from increasing profiles and grain boundaries. A method for the experimental determination of the C - V characteristics of ideal M I S diodes is developed. This method is applicable to stable diodes with only shallow traps in the semiconductor.
FILM CIRCUITS AND MATERIALS
(See also Components) The residual gases and v a c u u m deposited 20KA thick A! films. R. K. DHEER, Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 76. Aluminum films (20KA) were deposited under controlled gas ambients in the evaporator to investigate the effect of residual gases such as H2, H20, 02, N2 and CH4 on the physical properties of the films. It was found that water vapor and oxygen significantly affected the films at partial pressures of ~ 1 × 10-6 torr and 2 × 10-s tort respectively and above. The measurements included knoop hardness number, room temperature resistivity, residual resistance ratio (at 77°K and 4"2°K), temperature coefficient of resistance and X-ray diffraction studies for macro stress in the films, preferred orientation and change in lattice parameter. Films deposited under oxygen and water vapor had smaller as-deposited grain size and their grain growth at 450°C, 1 hr and 505°C, 1 hr heat treatment was very much inhibited. Data indicate that both water vapor and oxygen cause oxide formation and hydrogen is generated in the process.
be designed to be small, highly reliable, and relatively inexpensive. The basic structure out of which the circuits are formed is the planar transmission line, which may be designed in either the microstrip or the stripline configuration. Besides planar transmission lines, both lumped and distributed-parameter passive components together with their interconnections can be formed in the center conductor by photolithographic techniques, and beam-leaded active components can be bonded to the circuit patterns thus formed. Three examples of modern microwave integrated circuits are described, and the standard processes used to manufacture such circuits are explained in terms of one of the examples.
Ferromagnetism in thin films. N. MINNAJA, Alta Frequenza X X X l X , No. 6 (1970), p. 493 (In Italian). The main features of ferromagnetic thin films are reviewed. Particular attention is devoted to the recent developments of investigations about anisotropy and ripple. Some information is given about thin film memories.
f i l m deposition technology. A. BOTTELLI, Behavior of thick f i l m resistors deposited on thick film dielectric layers. R. P. HIMMEL, Proc. Alta Frequenza XXXIX, No. 6 (1970), p. 4~9 (in 1970 20th Electronic Components Conference, WashingItalian). The most important fabrication techniques of Thin
thin films as applied to microelectronics are reviewed, with emphasis on processing problems and main application areas. The processes examined are: serigraphy, electroplating and anodization, electroless plating, vacuum deposition (by thermal evaporation and by sputtering), chemical vapor deposition. A table resumes typical application fields of each technique, pointing out to which materials it has been applied to produce thin films with different functional characteristics.
The application of tlgln-fllm techlliques to microw a v e integrated c i r c u i t s . F. M. GOLL. Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 613. With the application of thin-film integrated-circuit techniques, microwave circuits can
ton, 13-15 May (1970), p. 531. The results of a study into the fabrication of thick film multilayer devices which include resistors are presented. Some of the processing problems encountered include nonunifortuity of resistor thickness and difficulties associated with the resistor trimming technique. The electrical behavior of resistors on thick film dielectrics is shown to be different from that of resistors on alumina with respect to fired resistivity, temperature coefficient of resistance (TCR), and stability. Some of the differences, such as lower resistivity and resistance drift caused by thermal shock, can be compensated for in processing; others, such as resistance drift resulting from elevated temperature storage and high TCR, limit the use of such devices to relatively noncritical applications.
WORLD
ABSTRACTS
ON M I C R O E L E C T R O N I C S
intermetallics were determined indirectly by measuring the tensile properties of the diffused couples. It was found that all the intermetaUics were stronger than gold or aluminum. However, appreciable voiding occurred in AusAl 2 after long times above 300°C and in AuAI~ after long times above 400°C weakening these phases catastrophically. The voiding was greatly accelerated by intermittent aging.
Limitations of the MIS capacitance m e t h o d resulting from s e m i c o n d u c t o r properties. E. R. LXNDNER, Solid-State Electron. 13 (1970), p. 1597. T h e influence of doping profiles, traps and grain boundaries in the semiconductor on the C - V characteristics of ideal
8. T H I C K A N D T H I N
AND
RELIABILITY
M I S diodes is calculated. In addition, it is shown that losses and frequency dispersion as well as hysteresis effects can result from traps in the semiconductor. If these semiconductor properties are ignored misinterpretations in terms of interface state density will arise which can be about 101~ cm -2. In the case of decreasing doping profiles and traps in a n-type semiconductor one will get an apparent positive surface charge while an apparent negative surface charge will result from increasing profiles and grain boundaries. A method for the experimental determination of the C - V characteristics of ideal M I S diodes is developed. This method is applicable to stable diodes with only shallow traps in the semiconductor.
FILM CIRCUITS AND MATERIALS
(See also Components) The residual gases and v a c u u m deposited 20KA thick A! films. R. K. DHEER, Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 76. Aluminum films (20KA) were deposited under controlled gas ambients in the evaporator to investigate the effect of residual gases such as H2, H20, 02, N2 and CH4 on the physical properties of the films. It was found that water vapor and oxygen significantly affected the films at partial pressures of ~ 1 × 10-6 torr and 2 × 10-s tort respectively and above. The measurements included knoop hardness number, room temperature resistivity, residual resistance ratio (at 77°K and 4"2°K), temperature coefficient of resistance and X-ray diffraction studies for macro stress in the films, preferred orientation and change in lattice parameter. Films deposited under oxygen and water vapor had smaller as-deposited grain size and their grain growth at 450°C, 1 hr and 505°C, 1 hr heat treatment was very much inhibited. Data indicate that both water vapor and oxygen cause oxide formation and hydrogen is generated in the process.
be designed to be small, highly reliable, and relatively inexpensive. The basic structure out of which the circuits are formed is the planar transmission line, which may be designed in either the microstrip or the stripline configuration. Besides planar transmission lines, both lumped and distributed-parameter passive components together with their interconnections can be formed in the center conductor by photolithographic techniques, and beam-leaded active components can be bonded to the circuit patterns thus formed. Three examples of modern microwave integrated circuits are described, and the standard processes used to manufacture such circuits are explained in terms of one of the examples.
Ferromagnetism in thin films. N. MINNAJA, Alta Frequenza X X X l X , No. 6 (1970), p. 493 (In Italian). The main features of ferromagnetic thin films are reviewed. Particular attention is devoted to the recent developments of investigations about anisotropy and ripple. Some information is given about thin film memories.
f i l m deposition technology. A. BOTTELLI, Behavior of thick f i l m resistors deposited on thick film dielectric layers. R. P. HIMMEL, Proc. Alta Frequenza XXXIX, No. 6 (1970), p. 4~9 (in 1970 20th Electronic Components Conference, WashingItalian). The most important fabrication techniques of Thin
thin films as applied to microelectronics are reviewed, with emphasis on processing problems and main application areas. The processes examined are: serigraphy, electroplating and anodization, electroless plating, vacuum deposition (by thermal evaporation and by sputtering), chemical vapor deposition. A table resumes typical application fields of each technique, pointing out to which materials it has been applied to produce thin films with different functional characteristics.
The application of tlgln-fllm techlliques to microw a v e integrated c i r c u i t s . F. M. GOLL. Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 613. With the application of thin-film integrated-circuit techniques, microwave circuits can
ton, 13-15 May (1970), p. 531. The results of a study into the fabrication of thick film multilayer devices which include resistors are presented. Some of the processing problems encountered include nonunifortuity of resistor thickness and difficulties associated with the resistor trimming technique. The electrical behavior of resistors on thick film dielectrics is shown to be different from that of resistors on alumina with respect to fired resistivity, temperature coefficient of resistance (TCR), and stability. Some of the differences, such as lower resistivity and resistance drift caused by thermal shock, can be compensated for in processing; others, such as resistance drift resulting from elevated temperature storage and high TCR, limit the use of such devices to relatively noncritical applications.