566
PhysicaB 158(1989)566-567 North-Holland, Amsterdam
THEORETICAL
STUDY ON THE HIGH-ENERGY
SPECTROSCOPY
ELECTRON
COMPARED WITH X-RAY ABSORPTION
ENERGY LOSS
SPECTROSCOPY
Shuji Takatoh, Takashi Fuj ikawa and Seiji Usami Faculty of Engineering, Yokohama
the alternative
phenomena
EXELFS
have
methods
in the reflection
by the use of
(EELS) spectra
In this work, we have performed and energy dependence
electrons have
Hodogaya,
are excited
derived
the
the general
study
surface
calculation
for
EELS in which
from deep core orbitals.
energy
particular,
[2].
numerical
of high-energy
high
[I]. In
mode has been widely used to
because of its high surface sensitivity
angular
applied
University,
for the study of EXAFS and XANES
been developed
energy loss spectroscopy
geometry
National
240, Japan
Recently, type electron
Yokohama
For this
formula based on many-body
it in the lowest order to atomic excitation
problem,
theory [4].
t31,
we
diffraction
In this paper, elastic after core excitation approximation
Bethe
and of thermal vibration
scatterings
are completely
However, we can expect the interference
waves.
those
the inelastic
be described
by the momentum
the
wave
vector
amplitude
electron
scattering
in terms of that for one atom system m(a,g;As) damping
this
from
As. Let z be a
M(a,z;A$)
deep
core given
is now
and of phenomenological
factor AA as follows:
property
orbital
of m(a,z;A$)
The
paper(31.
of scattering
Here, we consider and
has been discussed
in detail
of Ath atom is given by sA
position
CY is localized.
properties -1x1
the
electron
M(u,~;A$)=kexp(-iA$"$A)m(~,~;A~)exp{-AA}. The
and
from deep core ~1 can
excited
amplitude
to
sites. In
transfer of a fast electron,
of a secondary
CY. The inelastic
orbital
scattering
the
scattering
two
between
waves which excite the same kind of cores on different approximation
before
It corresponds
where plane waves are used for
and
of atoms.
of fast electrons
neglected.
we
consider
two kinds of crystal effects on EELS spectra in the lowest order; effects of inelastic
the
secondary
Exp(-iA$*sA)
in (1) is due to
the EELS from diamond
in a
where
electron waves in poly-atomic
-2x1 surfaces.
(1) previous the
core
coherent
the
systems.
(111) and silicon
(100)
for
these
We use the cluster approximation
surfaces which include about 5Os60 atoms per one layer. Only
when
coincides
with some surface
0921-4526/89/$03.50 @ El sevier Science Publishers (North-Holland Physics Publishing Division)
B.V.
reciprocal
lattice
567
S. Takatohetal./High-energy electron energy loss spectroscopy
the
vector,
intensity
scattered
large. We should note that
becomes
energy
A$ depends on the incident E
incident (scattered) the i' take-off angle ei (e,), and so on.
Figure
work.
geometrical
considered
Figure
(=k2/2)
the
shows
1
parameters
the
shows
2
this
in
Fiq.l The geometrical
parameters
ck
of the loss intensity at several spots.
dependence
energy region, we can expect to measure and 10.0'. At these points, A?
I/
to some surface reciprocal
strong loss signals at @f=3.0"
be
however,
lattice vectors,
purpose.
strong enough over wide energy shows
that
whereas
it is not the case intensity
calculation,
prospective
only special points are
transmission
at A6 ,,=O. Therefore,
for
that
factor
forthcoming
mode EELS always measures
the loss intensity
EELS spectra should be strong for any Ei. Figure
shows this situation
loss
This
range.
The results for Si(100) surface also show similar results.
However,
3
close
can arrive at the points quite
at 1.0' and 8.0'. In order to get good EXAFS data, the loss should
some
In
clearly,
it decays rapidly because
[43. Other results will be discussed
in
of
detail
atomic in
paper. DIAMOND
(111) K-edge
Si(100)
Fiq.Z(left) The loss intensity from diamond (111) with C surface K-edge excitation as function of E k at various spots.
2X1 (L2,3-edge)
Transmission
mode
I
Fig.3criqht) The intensity from Si L2,3-edge transmisin the sion mode. The film considered here is composed of 10 layers.
SECONDARY [ll R.Egerton:Electron (Plenum
Energy Press,New
Loss
ELECTRON
Spectroscopy
ENERGY
in the Electron
Microscope.
York,London,l986)
[2l J.Derrien,E.Chainet,M.DeCresenzi
and C.Noguera:Surf.Sci.l89(1987)590.
[31 T.Fujikawa:J.Phys.Soc.Jpn.57(1988)306. [4l T.Fujikawa,S.Takatoh
\eV)
and S.Usami:Jpn.J.Appl.Phys.27(1988)348.
the