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Theory of thin film transistor operation
Classified Abstracts 608-622
247
Vacuum Applications 30.
Evaporation and Sputtering
30: 11 Ultra-high vacuum chamber for producing extremely thin lllms. See Abstr. No. 554. Thin oxide film sandwich structure photocell.
30 : 19 See Abstr. No. 569.
30 : 19 Spectrometer for optical studies of ultra thin films. See Abstr. No. 570. 30 : 19 Photoelectronic device for measuring the thickness of thin films. See Abstr. No. 572. 30 : 19 Compound eye lens for generating multiple image arrays to help microminiaturization. See Abstr. No. 573. Coplanar-electrode Abstr. No. 657.
insulated
gate
thin-film
Theory of thin film transistor operation.
30 : 56 transistors. See
30 : 56 See Abstr. No. 658.
Magnetic focus prevents thin film contamination. 605.
30 : 28 See Abstr. No.
critical parameters of ‘I hard ” superconducting alloys and those of thin films is discussed. (U.S.S.R.) I. G. Dyakov et al,, Zhurnal Eksper. i Teor. Fiziki, 46 (3), March 1964, 831-832. 30 : 56 610. Thin film circuits, some production aspects. D. Boswell, Des. Electronics, 1 (4), Jan. 1964, 20. 30 : 33 611. The dynamic behaviour of magnetic thin films. (Great Britain) B. R. Hearn, J. Electronics & Control, 16 (l), Jan. 1964, 33. 30 612. Method for vacuum evaporation of silicon oxide films. (U.S.A.) F. Nesh, Rev. Sci. Instrum., 34 (12), Dec. 1963, 1437. 30 613. Chemical deposition of thin films of lead selenide. (U.S.A.) R. A. Zingaro and D. 0. Skovlin, J. Electrochem. Sot., 111 (l), Jan. 1964,42. 614. Filtering out the “ Comets ” (producer of rapid vacuiz evaporation of metal and dielectric materials.) (Great Britain) Anon., New Scientist, 19 (356), Sept. 1963, 552. 30
30 : 33 608. The dynamics of the domain structure of thin ferrite films in relation to temperature and magnetic field. (U.S.S.R.) The effect of magnetization and temperature on the domain structure of thin ferrite films was investigated with the help of the Kerr magneto-optical effect. The films were produced by cathodic sputtering of ferrite discs 2 cm in dia. and approximately 2 mm thick on a substrate of polished quartz, heated to 1000°C. The thickness of the films was determined optically, using an interference method. Cobalt and nickel-zinc ferrite films were found to have single axis anisotropy and domains in their case arrange themselves in one of two directions parallel to the optic axis. The seed formation in such films decreased with increase in temperature up to 200°C and subsequently increased. The domain structure of nickel ferrite films is peculiar in that the direction of the domain is always perpendicular to the demagnetization field. (U.S.S.R.) w. J. s. A. I. Drokin et aZ.,Fit. Tverdgo Tele., 6 (4), April 1964, 1223-1227.
615. Technique of the thin film. D. I. Gaffee, Electronics Weekly, (176), 15 Jan. 1964, 7. 30 616. Thin film evaporation. (U.S.A.) L. Najder, Znd and Engng. Chem., 56 (2), Feb., 1964 26. 30 617. Vacuum metallizing. (U.S. A.) Anon., Industrial Finishing, 15 (183), Sept. 1963, 33. 30 618. A non-destructive thin film memory, Part I. J. W. Hart, Sol. State. Des., 4 (12), Dec. 1963,25. 30 619. Vacuum deposition of ductile metallic films. (Great Britain) W. F. Brunner and H. G. Patton, Elect. Rel & Micromin., 2 (4), Dec. 1963, 241. 30
30 : 33 niobium films.
609. Critical magnetic fields of superconducting (U.S.S.R.) The films undergoing tests were 2 x 10d5 and 5 x lo-%rn thick. They were obtained by the evaporation method and since niobium is very sensitive to impurities emanating either from the substrate or the pumping installation, special precautions were taken to minimise such effects. Thus the substrate, consisting either of glass, Pyrex or mica, was heated to 2OO”C-300°C prior to and during the condensation process. Adsorptive evacuation was employed and the walls of the container cooled with liquid nitiogen. The niobium wire used for evaporation was subjected to prolonged heating at 2000-2200°C to remove the majority of adsorbed iases befoie the films were deposited and the pressure in the installation was kept at lo-’ torr during the whole process. The critical magnetic fields for the films depend on their thickness and all the values obtained were considerably higher than for the metal in bulk. The possibility of a connection between the
620. Thin film electronics in the U.S.A. (Great Britain) G. Siddell, Electronic Comp., 5 (2), Feb. 1964, 110. 30 : 16 621. Method of obtaining metallic catalysts in the form of a film, vacuum condensed on a fine grained substrate. (U.S.S.R.) Highly efficient nickel and copper-nickel catalysts have been obtained by sputtering the metals on to fine grained corundum powder (particle size 20-28~). A high vacuum (-lo-’ torr) is employed, the powder being vigorously agitated during the deposition. (U.S.S.R.) G. K. Boreskov and A. I. Gorbunov, Zhurnal. Fiz. Khim., 37 (12), 1963,2728-2733. 30 : 41 622. Vacuum siliconising of metals. (U.S.S.R.) V. E. Ivanov and A. I. Smovo, Primenenie Vakuuma v Metallurgii, 1963, 168-173.
247
Vacuum Applications 30.
Evaporation and Sputtering
30: 11 Ultra-high vacuum chamber for producing extremely thin lllms. See Abstr. No. 554. Thin oxide film sandwich structure photocell.
30 : 19 See Abstr. No. 569.
30 : 19 Spectrometer for optical studies of ultra thin films. See Abstr. No. 570. 30 : 19 Photoelectronic device for measuring the thickness of thin films. See Abstr. No. 572. 30 : 19 Compound eye lens for generating multiple image arrays to help microminiaturization. See Abstr. No. 573. Coplanar-electrode Abstr. No. 657.
insulated
gate
thin-film
Theory of thin film transistor operation.
30 : 56 transistors. See
30 : 56 See Abstr. No. 658.
Magnetic focus prevents thin film contamination. 605.
30 : 28 See Abstr. No.
critical parameters of ‘I hard ” superconducting alloys and those of thin films is discussed. (U.S.S.R.) I. G. Dyakov et al,, Zhurnal Eksper. i Teor. Fiziki, 46 (3), March 1964, 831-832. 30 : 56 610. Thin film circuits, some production aspects. D. Boswell, Des. Electronics, 1 (4), Jan. 1964, 20. 30 : 33 611. The dynamic behaviour of magnetic thin films. (Great Britain) B. R. Hearn, J. Electronics & Control, 16 (l), Jan. 1964, 33. 30 612. Method for vacuum evaporation of silicon oxide films. (U.S.A.) F. Nesh, Rev. Sci. Instrum., 34 (12), Dec. 1963, 1437. 30 613. Chemical deposition of thin films of lead selenide. (U.S.A.) R. A. Zingaro and D. 0. Skovlin, J. Electrochem. Sot., 111 (l), Jan. 1964,42. 614. Filtering out the “ Comets ” (producer of rapid vacuiz evaporation of metal and dielectric materials.) (Great Britain) Anon., New Scientist, 19 (356), Sept. 1963, 552. 30
30 : 33 608. The dynamics of the domain structure of thin ferrite films in relation to temperature and magnetic field. (U.S.S.R.) The effect of magnetization and temperature on the domain structure of thin ferrite films was investigated with the help of the Kerr magneto-optical effect. The films were produced by cathodic sputtering of ferrite discs 2 cm in dia. and approximately 2 mm thick on a substrate of polished quartz, heated to 1000°C. The thickness of the films was determined optically, using an interference method. Cobalt and nickel-zinc ferrite films were found to have single axis anisotropy and domains in their case arrange themselves in one of two directions parallel to the optic axis. The seed formation in such films decreased with increase in temperature up to 200°C and subsequently increased. The domain structure of nickel ferrite films is peculiar in that the direction of the domain is always perpendicular to the demagnetization field. (U.S.S.R.) w. J. s. A. I. Drokin et aZ.,Fit. Tverdgo Tele., 6 (4), April 1964, 1223-1227.
615. Technique of the thin film. D. I. Gaffee, Electronics Weekly, (176), 15 Jan. 1964, 7. 30 616. Thin film evaporation. (U.S.A.) L. Najder, Znd and Engng. Chem., 56 (2), Feb., 1964 26. 30 617. Vacuum metallizing. (U.S. A.) Anon., Industrial Finishing, 15 (183), Sept. 1963, 33. 30 618. A non-destructive thin film memory, Part I. J. W. Hart, Sol. State. Des., 4 (12), Dec. 1963,25. 30 619. Vacuum deposition of ductile metallic films. (Great Britain) W. F. Brunner and H. G. Patton, Elect. Rel & Micromin., 2 (4), Dec. 1963, 241. 30
30 : 33 niobium films.
609. Critical magnetic fields of superconducting (U.S.S.R.) The films undergoing tests were 2 x 10d5 and 5 x lo-%rn thick. They were obtained by the evaporation method and since niobium is very sensitive to impurities emanating either from the substrate or the pumping installation, special precautions were taken to minimise such effects. Thus the substrate, consisting either of glass, Pyrex or mica, was heated to 2OO”C-300°C prior to and during the condensation process. Adsorptive evacuation was employed and the walls of the container cooled with liquid nitiogen. The niobium wire used for evaporation was subjected to prolonged heating at 2000-2200°C to remove the majority of adsorbed iases befoie the films were deposited and the pressure in the installation was kept at lo-’ torr during the whole process. The critical magnetic fields for the films depend on their thickness and all the values obtained were considerably higher than for the metal in bulk. The possibility of a connection between the
620. Thin film electronics in the U.S.A. (Great Britain) G. Siddell, Electronic Comp., 5 (2), Feb. 1964, 110. 30 : 16 621. Method of obtaining metallic catalysts in the form of a film, vacuum condensed on a fine grained substrate. (U.S.S.R.) Highly efficient nickel and copper-nickel catalysts have been obtained by sputtering the metals on to fine grained corundum powder (particle size 20-28~). A high vacuum (-lo-’ torr) is employed, the powder being vigorously agitated during the deposition. (U.S.S.R.) G. K. Boreskov and A. I. Gorbunov, Zhurnal. Fiz. Khim., 37 (12), 1963,2728-2733. 30 : 41 622. Vacuum siliconising of metals. (U.S.S.R.) V. E. Ivanov and A. I. Smovo, Primenenie Vakuuma v Metallurgii, 1963, 168-173.