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Thin film transfer process for low cost MCM-D fabrication
560
World abstracts on microelectronics and reliability
lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/atkoxide solutions. These films exhibit very high dielectric constants (4 >/900), low dielectric losses (tan 6 ~ 0.01), excellent insulation resistance ( p > 1013f~-cm at 125°C), and good breakdown field strengths (Ea 900 kV cm- ~). For integrated circuit applications, the PLZT dielectric is less than 1 p.m thick, which results in a large capacitance/area (8-9 nF mm-2). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components. Artificial neural network techniques for the estimation of thick-film resistance. B. G. HOSKINS and M. R. HASKARD. Microelectronics Journal, 26, 9 (1995). Artificial neural network techniques are investigated as an alternative to parametric modelling for the estimation of fired thick-film resistor values. Multilayer neural network models are constructed from resistor substrate test data. The connectionist models are developed through training procedures, allowing subsequent fired-value prediction. These non-parametric approaches do not require the functional form of the model to be known. The techniques are suitable for use in computer aided design environments. Cu/photosensitive-BCB thin-film multilayer technology for high-performance multichip modules. TADANORI SHIMOTO, KOJI MATSUI and KAZUAKI UTSUMI. IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B, 18(1), 18 (February 1995). A new MCM-D technology which enables reliable fabrication of high-performance and low cost MCM's has been developed. The technology is based on Cu/photosensitive-BCB thin-film multilayer structure. The fabrication process is reduced by using the newly developed photosensitive-BCB, with a conventional photolithography process. The flexibility on design rules is allowed, because the Cu/BCB structure has the advantages of excellent planarization and low electrical resistance of signal line. The following long-term reliability tests were successfully done: thermal cycle (-45°C/125°C), high-temperature aging at 125°C, and high-temperature/humidity (85°C/85%). A prototype of the high density RISC module fabricated with the developed technology passed all the long-term reliability tests. The excellent electrical performance was also proved through the signal transmission tests with the prototype module. Thick-film resistor/dielectric interactions in a low temperature co-fired ceramic package. ROBERT C. SUTTERLIN, G O R D O N O. DAYTON and JAMES V. BIGGERS. IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B,
18(2), 346 (May 1995). Various commercial thick-film resistors are processed with a low temperature co-fired ceramic (LTCC) packaging material. The electrical properties and microstructure of the resistors are correlated. Three types of resistor/dielectric interfaces are observed. The interactions that occur between the resistor and the dielectric during the co-sintering process are affected by the physical and chemical properties of the glass phase of the resistor material. These interactions between the resistor and the dielectric are kinetically controlled by glass flow at the sintering temperature and thermodynamically driven by the activity gradients between components in the glass phases. The effect of these interactions on the sheet resistance and temperature coefficient of resistance of the resistor materials are discussed. Thin film transfer process for low cost MCM-D fabrication. C. NARAYAN, S. PURUSHOTHAMAN, F. DOANY and A. DEUTSCH. 1EEE Transactions on Components, Packaging and Manufacturing Technology, Part B, 18(1), 42 (February 1995). This paper describes a unique, highly flexible cost competitive method to fabricate microelectronic packages that require thin film interconnections. The method involves fabricating thin film metal-polymer structures multi-up on a reusable temporary glass carrier; the thin film stack is transferred later onto product substrates of choice. The final product substrate can be silicon, co-fired alumina or glass-ceramic, aluminum nitride, diamond, or a printed wiring board. Optionally, one can also use the released thin film decal as a flexible high wireability interconnect by itself, as an interposer, or in applications like wafer level testing for known good die (KGD). The thin film wiring structure can be fabricated multi-up on a standardized form factor carrier (independent of the characteristics of the final product substrate) in a thin film interconnect foundry, thus significantly reducing cost both from the economies of scale and full utilization of the thin film factory for a variety of customer needs. 9. ELECTRON, ION AND LASER BEAM TECHNIQUES The effect of self-ions bombardment on the structure and properties of thin metal films. O. V. KONONEMKO et al., Vacuum, 46(7), 685 (1995). Metal films were deposited by the partially ionized beam technique, using a source with high ionization efficiency. Some characteristics of the source were investigated. Metals with low, medium and high melting temperatures were used for deposition. It was found that ionization efficiency of low-melting metals is higher than that of metals with medium and high-melting temperatures. The effect of the amount of self-ions in the beam of a deposited material as well as the effect of their energy on the structure and properties of the resulting films were studied.
World abstracts on microelectronics and reliability
lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/atkoxide solutions. These films exhibit very high dielectric constants (4 >/900), low dielectric losses (tan 6 ~ 0.01), excellent insulation resistance ( p > 1013f~-cm at 125°C), and good breakdown field strengths (Ea 900 kV cm- ~). For integrated circuit applications, the PLZT dielectric is less than 1 p.m thick, which results in a large capacitance/area (8-9 nF mm-2). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components. Artificial neural network techniques for the estimation of thick-film resistance. B. G. HOSKINS and M. R. HASKARD. Microelectronics Journal, 26, 9 (1995). Artificial neural network techniques are investigated as an alternative to parametric modelling for the estimation of fired thick-film resistor values. Multilayer neural network models are constructed from resistor substrate test data. The connectionist models are developed through training procedures, allowing subsequent fired-value prediction. These non-parametric approaches do not require the functional form of the model to be known. The techniques are suitable for use in computer aided design environments. Cu/photosensitive-BCB thin-film multilayer technology for high-performance multichip modules. TADANORI SHIMOTO, KOJI MATSUI and KAZUAKI UTSUMI. IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B, 18(1), 18 (February 1995). A new MCM-D technology which enables reliable fabrication of high-performance and low cost MCM's has been developed. The technology is based on Cu/photosensitive-BCB thin-film multilayer structure. The fabrication process is reduced by using the newly developed photosensitive-BCB, with a conventional photolithography process. The flexibility on design rules is allowed, because the Cu/BCB structure has the advantages of excellent planarization and low electrical resistance of signal line. The following long-term reliability tests were successfully done: thermal cycle (-45°C/125°C), high-temperature aging at 125°C, and high-temperature/humidity (85°C/85%). A prototype of the high density RISC module fabricated with the developed technology passed all the long-term reliability tests. The excellent electrical performance was also proved through the signal transmission tests with the prototype module. Thick-film resistor/dielectric interactions in a low temperature co-fired ceramic package. ROBERT C. SUTTERLIN, G O R D O N O. DAYTON and JAMES V. BIGGERS. IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B,
18(2), 346 (May 1995). Various commercial thick-film resistors are processed with a low temperature co-fired ceramic (LTCC) packaging material. The electrical properties and microstructure of the resistors are correlated. Three types of resistor/dielectric interfaces are observed. The interactions that occur between the resistor and the dielectric during the co-sintering process are affected by the physical and chemical properties of the glass phase of the resistor material. These interactions between the resistor and the dielectric are kinetically controlled by glass flow at the sintering temperature and thermodynamically driven by the activity gradients between components in the glass phases. The effect of these interactions on the sheet resistance and temperature coefficient of resistance of the resistor materials are discussed. Thin film transfer process for low cost MCM-D fabrication. C. NARAYAN, S. PURUSHOTHAMAN, F. DOANY and A. DEUTSCH. 1EEE Transactions on Components, Packaging and Manufacturing Technology, Part B, 18(1), 42 (February 1995). This paper describes a unique, highly flexible cost competitive method to fabricate microelectronic packages that require thin film interconnections. The method involves fabricating thin film metal-polymer structures multi-up on a reusable temporary glass carrier; the thin film stack is transferred later onto product substrates of choice. The final product substrate can be silicon, co-fired alumina or glass-ceramic, aluminum nitride, diamond, or a printed wiring board. Optionally, one can also use the released thin film decal as a flexible high wireability interconnect by itself, as an interposer, or in applications like wafer level testing for known good die (KGD). The thin film wiring structure can be fabricated multi-up on a standardized form factor carrier (independent of the characteristics of the final product substrate) in a thin film interconnect foundry, thus significantly reducing cost both from the economies of scale and full utilization of the thin film factory for a variety of customer needs. 9. ELECTRON, ION AND LASER BEAM TECHNIQUES The effect of self-ions bombardment on the structure and properties of thin metal films. O. V. KONONEMKO et al., Vacuum, 46(7), 685 (1995). Metal films were deposited by the partially ionized beam technique, using a source with high ionization efficiency. Some characteristics of the source were investigated. Metals with low, medium and high melting temperatures were used for deposition. It was found that ionization efficiency of low-melting metals is higher than that of metals with medium and high-melting temperatures. The effect of the amount of self-ions in the beam of a deposited material as well as the effect of their energy on the structure and properties of the resulting films were studied.