51 573. The thickness dependence of the permittivity of barium titanate single crystals. Czechoslovakia. A thickness dependence of the permittivity of c-domain barium titanate single crystals was found. The experimental results were explained by means of a model of a dielectric with surface layers. The thickness of the layer and the permittivity of the surface layer and bulk of the crystal were (Authors) determined. P. Coufov& and H. Arend, 308-312. 52.
Czech. J. Phys., B12 (4), April 1962,
Genera1 principles of the freeze-drying of food. No. 563.
54 : 36 See Abstr.
54 : 38 The technique of molecular distillation : principles and industrial applications. See Abstr. No. 566.
52 574. Reactivity of deformed metal surfaces. (Great Britain). R. B. Campbell, Nature, 197 (4865), 26 Jan. 1963, 374-375. 52 : 47 High temperature thermobalance. 53.
Metallurgy,
See Abstr. No. 571.
Ceramics, Inorganic Chemistry
Sintering parts from beryllium powder.
54.
Biology,
53 : 37 : 41 See Abstr. No. 565.
Biochemistry, Pharmaceutics, Organic Chemistry
The role of refrigeration in the economy.
Toxicology,
54 : 48 See Abstr. No. 572.
54 : 36 Application of vacuum in medicine and the pharmaceutical industry. See Abstr. No. 562. Vacuum technical problems in the food industry. No. 561.
54 : 36 See Abstr.
54: 11 The application of vacuum to the refining of fats and some derived products. See Abstr. No. 476. Vacuum refrigeration of vegetable products.
54 : 13 See Abstr. No. 479.
54 : 10 Vacuum techniques and their role in the food industry. See Abstr. No. 474.
Progress with extremely small electronic circuits. No. 472.
56: IO See Abstr.
56 : 18 : 33 Phenomena occurring at electrically stressed metallic surfaces in long gaps in vacuum. See Abstr. No. 499. 56 : I8 A new approach to thermionic energy conversion : space charge neutralization by an auxiliary discharge. See Abstr. No. 502. 56 : 30 Thin magnetic films.
See Abstr. No. 529.
Sputtered components in thin film circuits.
56 : 30 See Abstr. No. 530. 56 : 30
Thin film transistor.
See Abstr. No. 53 I. 56 : 30
Epitaxial silicon devices. Inductance No. 542.
See Abstr. No. 533.
in thin film superconducting structures.
Electron trigonometry-a See Abstr. No. 555.
56 : 30 See Abstr.
56 : 33 new tool for electron-optical design. 56 : 31