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Thin-films increase computer reliability
ABSTRACTS ON ELECTRONICS RELIABILITY AND 3,IICRO.MINIATURIZATION
79
M i c r o m i n i a t u r e circuits. Space Aeronautics 38, No. 2, E.24-E.25 (R & D Tech. Handbook) (1962). Some 60 microminiature circuits commercially available or to customers' specifications are listed together with data on their active elements, range of values and tolerances of their passive elements, encapsulation, dimensions and temperature ranges. SEMICONDUCTOR MICROMINIATURIZATION--INTEGRATED SYSTEMS, ETC. N e w techniques for semiconductor device m i e r o m i n i a t u r i z a t i o n . \V. RINDNER and J. 31. LAVI.~E. Semiconductor Products. Oct. 1962, p. 19. Techniques are described which involve the establishment of nucleation centres as small as one micron in width on a variety of semiconducting or insulating materials. These techniques have been employed with Ge, Si, GaAs, InSb and SiO~. substrates in the present work.These nucleating areas then permit selective plating with a variety of metals such as Au, Pb, Sn, Ni commonly used in semiconductor device fabrication. Contributions of m a t e r i a l s t e c h n o l o g y to s e m i c o n d u c t o r devices. R. L. PETRITZ, Proc. I.R.E. 50, No. 5, 1025-1038 (1962). Two basic disciplines underlying the design and development of solidstate electronic devices are: (1) the design and analysis of the device from the electron physics standpoint, and (2) the materials technology by which suitable structures in solids are prepared to fulfil the conditions specified in the device design. This article considers the second discipline, and reviews the basic steps of purification of materials, crystal growth, and processes such as diffusion and alloying for fabricating structures. Germanium, silicon, and compound semiconductors are discussed. An historical review is given, and directions of future developments are indicated. THIN FILM MICROMINIATURIZATION TECHNIQUES, ETC. A control system for the evaporation of silicon monoxide insulating films. R. E. HAYES and A. R. V. ROBERTS,J. Sci. Instrum. 39, No. 8, 428-431 (1962). In this control system an incremental weightmeter measures the evaporation rate of a vapour source and cuts it off when the required weight has been deposited. The force on a vane placed in the vapour stream produces a current used to control the microammeter movement stabilized by an optical servo system. Thin-films increase computer reliability. B. MILLER, Aviat. Week and Space Technol. 77, 59, 63, Sept. 24, 1962. A computer employing thin-film microcircuits is described for use in an Air Force space system. The potential advantages of thin films in terms of reliability, size and weight are discussed. T u n n e l e m i s s i o n into v a c u u m . J. COHEn', J . . 4 p p l . Phys. 33, No. 6, 1999-2000 (1962). Tunnel emission into vacuum is obtained from thin-film sandwiches of (a) Aluminium-alumina-aluminium, and (b) aluminium-alumina-platinum. Caesium processing, to lower the work function, results in an increase of emission of five orders of magnitude. Thin film triode research. G. T. ADVANI, J. G. GOTTLINGand M. S. OSMA.~',Proc. Inst. Radio Engrs. 50, No. 6 (I), 1530-1531 (1962). An evaporated thin-film triode is described, employing alumina as emitter and collector barriers. The results of measurements and a tentative theoretical interpretation are given. The Space-Charge-Limited dielectric triode: Successor to the transistor. G. T. WRIGHT, Inst. Elect. Engng. 8, No. 94, 450-453 (1962). Research at Birmingham University into the fundamental physics and engineering of space-charge limited current in solids is described. The possibilities of creating a new class of solid-state electronic devices combining the best features of the thermionic vacuum tube and the semiconductor junction transistor are discussed. MICROMODULAR TECHNIQUES M i c r o - m o d u l e technique--a modern f o r m of construction for telecommunication c o m ponent parts showing economic manufacturing perspectives. S. STOLZE, :Vachrichtentechnik 12, No. 11,404 (1962). After showing the path of development the manufacturing programme of the VEB Keramische \Verke Hermsdorf is described. A comparison shows its advantages against similar products of other manufacturers. (In German.)
ABSTRACTS ON ELECTRONICS RELIABILITY AND 3,IICRO.MINIATURIZATION
79
M i c r o m i n i a t u r e circuits. Space Aeronautics 38, No. 2, E.24-E.25 (R & D Tech. Handbook) (1962). Some 60 microminiature circuits commercially available or to customers' specifications are listed together with data on their active elements, range of values and tolerances of their passive elements, encapsulation, dimensions and temperature ranges. SEMICONDUCTOR MICROMINIATURIZATION--INTEGRATED SYSTEMS, ETC. N e w techniques for semiconductor device m i e r o m i n i a t u r i z a t i o n . \V. RINDNER and J. 31. LAVI.~E. Semiconductor Products. Oct. 1962, p. 19. Techniques are described which involve the establishment of nucleation centres as small as one micron in width on a variety of semiconducting or insulating materials. These techniques have been employed with Ge, Si, GaAs, InSb and SiO~. substrates in the present work.These nucleating areas then permit selective plating with a variety of metals such as Au, Pb, Sn, Ni commonly used in semiconductor device fabrication. Contributions of m a t e r i a l s t e c h n o l o g y to s e m i c o n d u c t o r devices. R. L. PETRITZ, Proc. I.R.E. 50, No. 5, 1025-1038 (1962). Two basic disciplines underlying the design and development of solidstate electronic devices are: (1) the design and analysis of the device from the electron physics standpoint, and (2) the materials technology by which suitable structures in solids are prepared to fulfil the conditions specified in the device design. This article considers the second discipline, and reviews the basic steps of purification of materials, crystal growth, and processes such as diffusion and alloying for fabricating structures. Germanium, silicon, and compound semiconductors are discussed. An historical review is given, and directions of future developments are indicated. THIN FILM MICROMINIATURIZATION TECHNIQUES, ETC. A control system for the evaporation of silicon monoxide insulating films. R. E. HAYES and A. R. V. ROBERTS,J. Sci. Instrum. 39, No. 8, 428-431 (1962). In this control system an incremental weightmeter measures the evaporation rate of a vapour source and cuts it off when the required weight has been deposited. The force on a vane placed in the vapour stream produces a current used to control the microammeter movement stabilized by an optical servo system. Thin-films increase computer reliability. B. MILLER, Aviat. Week and Space Technol. 77, 59, 63, Sept. 24, 1962. A computer employing thin-film microcircuits is described for use in an Air Force space system. The potential advantages of thin films in terms of reliability, size and weight are discussed. T u n n e l e m i s s i o n into v a c u u m . J. COHEn', J . . 4 p p l . Phys. 33, No. 6, 1999-2000 (1962). Tunnel emission into vacuum is obtained from thin-film sandwiches of (a) Aluminium-alumina-aluminium, and (b) aluminium-alumina-platinum. Caesium processing, to lower the work function, results in an increase of emission of five orders of magnitude. Thin film triode research. G. T. ADVANI, J. G. GOTTLINGand M. S. OSMA.~',Proc. Inst. Radio Engrs. 50, No. 6 (I), 1530-1531 (1962). An evaporated thin-film triode is described, employing alumina as emitter and collector barriers. The results of measurements and a tentative theoretical interpretation are given. The Space-Charge-Limited dielectric triode: Successor to the transistor. G. T. WRIGHT, Inst. Elect. Engng. 8, No. 94, 450-453 (1962). Research at Birmingham University into the fundamental physics and engineering of space-charge limited current in solids is described. The possibilities of creating a new class of solid-state electronic devices combining the best features of the thermionic vacuum tube and the semiconductor junction transistor are discussed. MICROMODULAR TECHNIQUES M i c r o - m o d u l e technique--a modern f o r m of construction for telecommunication c o m ponent parts showing economic manufacturing perspectives. S. STOLZE, :Vachrichtentechnik 12, No. 11,404 (1962). After showing the path of development the manufacturing programme of the VEB Keramische \Verke Hermsdorf is described. A comparison shows its advantages against similar products of other manufacturers. (In German.)
79
M i c r o m i n i a t u r e circuits. Space Aeronautics 38, No. 2, E.24-E.25 (R & D Tech. Handbook) (1962). Some 60 microminiature circuits commercially available or to customers' specifications are listed together with data on their active elements, range of values and tolerances of their passive elements, encapsulation, dimensions and temperature ranges. SEMICONDUCTOR MICROMINIATURIZATION--INTEGRATED SYSTEMS, ETC. N e w techniques for semiconductor device m i e r o m i n i a t u r i z a t i o n . \V. RINDNER and J. 31. LAVI.~E. Semiconductor Products. Oct. 1962, p. 19. Techniques are described which involve the establishment of nucleation centres as small as one micron in width on a variety of semiconducting or insulating materials. These techniques have been employed with Ge, Si, GaAs, InSb and SiO~. substrates in the present work.These nucleating areas then permit selective plating with a variety of metals such as Au, Pb, Sn, Ni commonly used in semiconductor device fabrication. Contributions of m a t e r i a l s t e c h n o l o g y to s e m i c o n d u c t o r devices. R. L. PETRITZ, Proc. I.R.E. 50, No. 5, 1025-1038 (1962). Two basic disciplines underlying the design and development of solidstate electronic devices are: (1) the design and analysis of the device from the electron physics standpoint, and (2) the materials technology by which suitable structures in solids are prepared to fulfil the conditions specified in the device design. This article considers the second discipline, and reviews the basic steps of purification of materials, crystal growth, and processes such as diffusion and alloying for fabricating structures. Germanium, silicon, and compound semiconductors are discussed. An historical review is given, and directions of future developments are indicated. THIN FILM MICROMINIATURIZATION TECHNIQUES, ETC. A control system for the evaporation of silicon monoxide insulating films. R. E. HAYES and A. R. V. ROBERTS,J. Sci. Instrum. 39, No. 8, 428-431 (1962). In this control system an incremental weightmeter measures the evaporation rate of a vapour source and cuts it off when the required weight has been deposited. The force on a vane placed in the vapour stream produces a current used to control the microammeter movement stabilized by an optical servo system. Thin-films increase computer reliability. B. MILLER, Aviat. Week and Space Technol. 77, 59, 63, Sept. 24, 1962. A computer employing thin-film microcircuits is described for use in an Air Force space system. The potential advantages of thin films in terms of reliability, size and weight are discussed. T u n n e l e m i s s i o n into v a c u u m . J. COHEn', J . . 4 p p l . Phys. 33, No. 6, 1999-2000 (1962). Tunnel emission into vacuum is obtained from thin-film sandwiches of (a) Aluminium-alumina-aluminium, and (b) aluminium-alumina-platinum. Caesium processing, to lower the work function, results in an increase of emission of five orders of magnitude. Thin film triode research. G. T. ADVANI, J. G. GOTTLINGand M. S. OSMA.~',Proc. Inst. Radio Engrs. 50, No. 6 (I), 1530-1531 (1962). An evaporated thin-film triode is described, employing alumina as emitter and collector barriers. The results of measurements and a tentative theoretical interpretation are given. The Space-Charge-Limited dielectric triode: Successor to the transistor. G. T. WRIGHT, Inst. Elect. Engng. 8, No. 94, 450-453 (1962). Research at Birmingham University into the fundamental physics and engineering of space-charge limited current in solids is described. The possibilities of creating a new class of solid-state electronic devices combining the best features of the thermionic vacuum tube and the semiconductor junction transistor are discussed. MICROMODULAR TECHNIQUES M i c r o - m o d u l e technique--a modern f o r m of construction for telecommunication c o m ponent parts showing economic manufacturing perspectives. S. STOLZE, :Vachrichtentechnik 12, No. 11,404 (1962). After showing the path of development the manufacturing programme of the VEB Keramische \Verke Hermsdorf is described. A comparison shows its advantages against similar products of other manufacturers. (In German.)
ABSTRACTS ON ELECTRONICS RELIABILITY AND 3,IICRO.MINIATURIZATION
79
M i c r o m i n i a t u r e circuits. Space Aeronautics 38, No. 2, E.24-E.25 (R & D Tech. Handbook) (1962). Some 60 microminiature circuits commercially available or to customers' specifications are listed together with data on their active elements, range of values and tolerances of their passive elements, encapsulation, dimensions and temperature ranges. SEMICONDUCTOR MICROMINIATURIZATION--INTEGRATED SYSTEMS, ETC. N e w techniques for semiconductor device m i e r o m i n i a t u r i z a t i o n . \V. RINDNER and J. 31. LAVI.~E. Semiconductor Products. Oct. 1962, p. 19. Techniques are described which involve the establishment of nucleation centres as small as one micron in width on a variety of semiconducting or insulating materials. These techniques have been employed with Ge, Si, GaAs, InSb and SiO~. substrates in the present work.These nucleating areas then permit selective plating with a variety of metals such as Au, Pb, Sn, Ni commonly used in semiconductor device fabrication. Contributions of m a t e r i a l s t e c h n o l o g y to s e m i c o n d u c t o r devices. R. L. PETRITZ, Proc. I.R.E. 50, No. 5, 1025-1038 (1962). Two basic disciplines underlying the design and development of solidstate electronic devices are: (1) the design and analysis of the device from the electron physics standpoint, and (2) the materials technology by which suitable structures in solids are prepared to fulfil the conditions specified in the device design. This article considers the second discipline, and reviews the basic steps of purification of materials, crystal growth, and processes such as diffusion and alloying for fabricating structures. Germanium, silicon, and compound semiconductors are discussed. An historical review is given, and directions of future developments are indicated. THIN FILM MICROMINIATURIZATION TECHNIQUES, ETC. A control system for the evaporation of silicon monoxide insulating films. R. E. HAYES and A. R. V. ROBERTS,J. Sci. Instrum. 39, No. 8, 428-431 (1962). In this control system an incremental weightmeter measures the evaporation rate of a vapour source and cuts it off when the required weight has been deposited. The force on a vane placed in the vapour stream produces a current used to control the microammeter movement stabilized by an optical servo system. Thin-films increase computer reliability. B. MILLER, Aviat. Week and Space Technol. 77, 59, 63, Sept. 24, 1962. A computer employing thin-film microcircuits is described for use in an Air Force space system. The potential advantages of thin films in terms of reliability, size and weight are discussed. T u n n e l e m i s s i o n into v a c u u m . J. COHEn', J . . 4 p p l . Phys. 33, No. 6, 1999-2000 (1962). Tunnel emission into vacuum is obtained from thin-film sandwiches of (a) Aluminium-alumina-aluminium, and (b) aluminium-alumina-platinum. Caesium processing, to lower the work function, results in an increase of emission of five orders of magnitude. Thin film triode research. G. T. ADVANI, J. G. GOTTLINGand M. S. OSMA.~',Proc. Inst. Radio Engrs. 50, No. 6 (I), 1530-1531 (1962). An evaporated thin-film triode is described, employing alumina as emitter and collector barriers. The results of measurements and a tentative theoretical interpretation are given. The Space-Charge-Limited dielectric triode: Successor to the transistor. G. T. WRIGHT, Inst. Elect. Engng. 8, No. 94, 450-453 (1962). Research at Birmingham University into the fundamental physics and engineering of space-charge limited current in solids is described. The possibilities of creating a new class of solid-state electronic devices combining the best features of the thermionic vacuum tube and the semiconductor junction transistor are discussed. MICROMODULAR TECHNIQUES M i c r o - m o d u l e technique--a modern f o r m of construction for telecommunication c o m ponent parts showing economic manufacturing perspectives. S. STOLZE, :Vachrichtentechnik 12, No. 11,404 (1962). After showing the path of development the manufacturing programme of the VEB Keramische \Verke Hermsdorf is described. A comparison shows its advantages against similar products of other manufacturers. (In German.)