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Third international conference on crystal growth
Solid State Communications,
Vol. 9, pp. iii_v, 1971.
Pergamon Press.
Printed in Great Britain
Calendar of Solid State Events Items for inclusion in the Calendar should state the title, date, location and sponsors of the meeting, and also the name and address of the person to whom enquiries should be directed. Announcements for publication should be mailed to ‘Editor, Solid State Communications,’ Department of Physics, U niversity of Pennsylvania, Philadelphia, Pennsylvania, 19104. 5—9 July 1971
meetings have been held in Prague 1965, Bucharest 1967, and Cambridge University.
Third International Conference on Crystal Growth, Marseilles, France.
Program will include invited papers, contributed papers, and discussion sessions. Topics include electronic properties; theory of electronic states in disordered materials, surface and interface phenomena; preparation, structure and phase changes; and devices.
Conference aims to bring together researchers of different disciplines interested in fundamental or applied problems of crystal growth, phase transformation, new techniques in the growth of monocrystals and industrial crystallization. Parallel sessions are planned to accommodate the large number of participants which are expected. Original works on crystal growth and phase transformations ma~’be submitted for the approval of the programme committee,
Contributed papers (15 minutes) on above or related topics are solicited. Selection will be made by the Steering Committee on the basis of abstracts due 1 April 1971. Notification of acceptance will be by 1 June. Abstracts of not more than 200 words must conform to format standards of the Bulletin of the American Physical Society. Abstracts should be submitted to
For further information, see Solid State Communications, Vol. 8, No. 21.
the Conference Secretary. Proceedings will be published.
Information Secrétaire Général de III Congrés International de Croissance Cristalline, B. Mutaftschiev, Laboratoire des Mechanismes de la Croissance Cristalline, Faculté des Sciences de Marseille. Saint-Jérôme, 13 — Marseille 13~,France.
Information Conference Secretary, Professor J . C. Thompson, Department of Physics, University of Texas, Austin, Texas 78712. 16—28 August 1971
8—13 August 1971
NATO Advanced Study Institute on Interaction of Energetic Charged Particles with Solids, Robert College, Istanbul, Turkey.
Fourth International Conference on Amorphous and Liquid Semiconductors, Universit~ of Michigan, Ann Abor, Michigan, USA.
Staff members of the Middle East Technical University and of Brookhaven National Laboratory are organizing a summer institute as a rnemorial to the late Dr. Cavid Erginsoy, who was on the senior staff of both institutions. Lecturers will discuss a wide range of solid-state topics
This conference is organized b~’the international Steering Committee under the chairmanship of Morrel H. Cohen, University of Chicago. IUPAP sponsorship has been recommended by the IUPAP Semiconductor Commission. Previous i~i
Vol. 9, pp. iii_v, 1971.
Pergamon Press.
Printed in Great Britain
Calendar of Solid State Events Items for inclusion in the Calendar should state the title, date, location and sponsors of the meeting, and also the name and address of the person to whom enquiries should be directed. Announcements for publication should be mailed to ‘Editor, Solid State Communications,’ Department of Physics, U niversity of Pennsylvania, Philadelphia, Pennsylvania, 19104. 5—9 July 1971
meetings have been held in Prague 1965, Bucharest 1967, and Cambridge University.
Third International Conference on Crystal Growth, Marseilles, France.
Program will include invited papers, contributed papers, and discussion sessions. Topics include electronic properties; theory of electronic states in disordered materials, surface and interface phenomena; preparation, structure and phase changes; and devices.
Conference aims to bring together researchers of different disciplines interested in fundamental or applied problems of crystal growth, phase transformation, new techniques in the growth of monocrystals and industrial crystallization. Parallel sessions are planned to accommodate the large number of participants which are expected. Original works on crystal growth and phase transformations ma~’be submitted for the approval of the programme committee,
Contributed papers (15 minutes) on above or related topics are solicited. Selection will be made by the Steering Committee on the basis of abstracts due 1 April 1971. Notification of acceptance will be by 1 June. Abstracts of not more than 200 words must conform to format standards of the Bulletin of the American Physical Society. Abstracts should be submitted to
For further information, see Solid State Communications, Vol. 8, No. 21.
the Conference Secretary. Proceedings will be published.
Information Secrétaire Général de III Congrés International de Croissance Cristalline, B. Mutaftschiev, Laboratoire des Mechanismes de la Croissance Cristalline, Faculté des Sciences de Marseille. Saint-Jérôme, 13 — Marseille 13~,France.
Information Conference Secretary, Professor J . C. Thompson, Department of Physics, University of Texas, Austin, Texas 78712. 16—28 August 1971
8—13 August 1971
NATO Advanced Study Institute on Interaction of Energetic Charged Particles with Solids, Robert College, Istanbul, Turkey.
Fourth International Conference on Amorphous and Liquid Semiconductors, Universit~ of Michigan, Ann Abor, Michigan, USA.
Staff members of the Middle East Technical University and of Brookhaven National Laboratory are organizing a summer institute as a rnemorial to the late Dr. Cavid Erginsoy, who was on the senior staff of both institutions. Lecturers will discuss a wide range of solid-state topics
This conference is organized b~’the international Steering Committee under the chairmanship of Morrel H. Cohen, University of Chicago. IUPAP sponsorship has been recommended by the IUPAP Semiconductor Commission. Previous i~i