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Transistor and diode chip development
ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
197
Transistor a n d diode chip development. J. G. SCOTT, Ind. Electron., July (1966), p. 312. Today, the development of the two most prominent forms of microelectronies (thin-film circuits and semiconductor integrated circuits) relies mainly on packaging techniques. This article describes some of the advances in the packaging of semiconductor devices and circuits achieved by Hughes International (U.K.) Ltd., and now being applied at their Glenrothes factory. Large scale integration Technology. R. L. PETPaTZ,Trans. MetalL Soc. AIME, 236, March (1966), p. 235. A brief review of today's processing of integrated circuits is given. The major trends in the development of advanced integrated electronics are identified as (1) the broadening of the integrated circuit concept to a large class of circuit function, (2) the processing of more complex circuits within relatively small chips of silicon and (3) the processing of very large electronic functions on complete slices of silicon. This latter trend, called array technology, is then developed in detail. Emphasis is given to defining the key technological problems. Current progress being made is illustrated.
Integrated electronics---its place in education. K. J. DF~'% Electron. Engng., July (1966), p. 458. In education one cannot afford to teach principles in such a way that the practice of electronics is unrelated to current industrial practice. For instance, thermionics is taught because it still has its place in high power systems and in the entertainment market. Transistor theory is taught because transistors are important wherever mobility is at a premium; in instrumentation, in computers and in a host of other applications. Now integrated electronics is showing the same growth pattern as was experienced years ago with transistors. First, integrated circuits were accepted for military applications, then as the price fell, for industrial purposes, and finally with increased production they will be used in the entertainment market. One cannot expect students to support an educational establishment which provides them with chiefly obsolescent material. Hence, integrated circuits must be introduced in the courses. This is not to say that one must be blown about with every wind of change, but consolidated development must be reflected in college work. Large-area m ~ , k l n g with patterns of m i c r o n a n d s u b m i c r o n e l e m e n t size. H. J. SCHUETZSand K. E. Hn~NINGS, SCP and Solid St. Technology, July (1966), p. 31. The preparation of patterns with micron and submicron details on large areas requires lenses with very high resolving power across large image areas, careful illumination, adequate photoresist material and extremely fiat substrates. The lens properties of various types are investigated. A number of methods for pattern generation are considered. The experimentally attained present state of the art for the lower limits of the smallest useful pattern element size is discussed with regard to the several steps involved in the total procedure. A metal-onglass pattern with the ultlmate line width of 0.4 ~ and a 0.65 tt transistor pattern etched into the SiO, coating of a silicon wafer which is processed to a flatness of 0.5 ~ across 1 in. dia. are described. A m i c r o e l e c t r o n i c laboratory for universities. S. J. ANGELLO,P. F. ORDUNCand G. B. CAPPIELLO, SCP and Solid St. Technology, July (1966), p. 26. The Microelectronies Laboratory, which supplements the solid state electronics course at Santa Barbara, is described. The philosophy of the set-up and operation is given along with descriptions of equipment suitable for schools. Some examples of student experiments are presented. It is suggested that a Semiconductor Device Laboratory must become a permanent addition to an Electrical Engineering Department to prepare students for work in this burgeoning field. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICF~ AND MATERIALS Characteristics o f silicon doped low-energy ion implantation. K. E. MANCHESTERand C. B. SmLEY, Trans. Metall. Soc. AIME, 236, March (1966), p. 379. The feasibility of doping silicon to produce device structures by directly implanting impurity atoms has been demonstrated. Both phosphorous and boron ions have been successfully implanted in silicon to produce electrical junctions. Junctions as deep as 1-2 ~ have been produced by phosphorus ions having energies the order of 80 keV. An electromagnetic separator has been used to controllably produce uniform, large-area implantations for evaluation experimentation. Correlations between junction depths and ion energies have been obtained. Orientation effects have been observed and it has been found that the ~ 1 1 0 > direction is the easy
197
Transistor a n d diode chip development. J. G. SCOTT, Ind. Electron., July (1966), p. 312. Today, the development of the two most prominent forms of microelectronies (thin-film circuits and semiconductor integrated circuits) relies mainly on packaging techniques. This article describes some of the advances in the packaging of semiconductor devices and circuits achieved by Hughes International (U.K.) Ltd., and now being applied at their Glenrothes factory. Large scale integration Technology. R. L. PETPaTZ,Trans. MetalL Soc. AIME, 236, March (1966), p. 235. A brief review of today's processing of integrated circuits is given. The major trends in the development of advanced integrated electronics are identified as (1) the broadening of the integrated circuit concept to a large class of circuit function, (2) the processing of more complex circuits within relatively small chips of silicon and (3) the processing of very large electronic functions on complete slices of silicon. This latter trend, called array technology, is then developed in detail. Emphasis is given to defining the key technological problems. Current progress being made is illustrated.
Integrated electronics---its place in education. K. J. DF~'% Electron. Engng., July (1966), p. 458. In education one cannot afford to teach principles in such a way that the practice of electronics is unrelated to current industrial practice. For instance, thermionics is taught because it still has its place in high power systems and in the entertainment market. Transistor theory is taught because transistors are important wherever mobility is at a premium; in instrumentation, in computers and in a host of other applications. Now integrated electronics is showing the same growth pattern as was experienced years ago with transistors. First, integrated circuits were accepted for military applications, then as the price fell, for industrial purposes, and finally with increased production they will be used in the entertainment market. One cannot expect students to support an educational establishment which provides them with chiefly obsolescent material. Hence, integrated circuits must be introduced in the courses. This is not to say that one must be blown about with every wind of change, but consolidated development must be reflected in college work. Large-area m ~ , k l n g with patterns of m i c r o n a n d s u b m i c r o n e l e m e n t size. H. J. SCHUETZSand K. E. Hn~NINGS, SCP and Solid St. Technology, July (1966), p. 31. The preparation of patterns with micron and submicron details on large areas requires lenses with very high resolving power across large image areas, careful illumination, adequate photoresist material and extremely fiat substrates. The lens properties of various types are investigated. A number of methods for pattern generation are considered. The experimentally attained present state of the art for the lower limits of the smallest useful pattern element size is discussed with regard to the several steps involved in the total procedure. A metal-onglass pattern with the ultlmate line width of 0.4 ~ and a 0.65 tt transistor pattern etched into the SiO, coating of a silicon wafer which is processed to a flatness of 0.5 ~ across 1 in. dia. are described. A m i c r o e l e c t r o n i c laboratory for universities. S. J. ANGELLO,P. F. ORDUNCand G. B. CAPPIELLO, SCP and Solid St. Technology, July (1966), p. 26. The Microelectronies Laboratory, which supplements the solid state electronics course at Santa Barbara, is described. The philosophy of the set-up and operation is given along with descriptions of equipment suitable for schools. Some examples of student experiments are presented. It is suggested that a Semiconductor Device Laboratory must become a permanent addition to an Electrical Engineering Department to prepare students for work in this burgeoning field. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICF~ AND MATERIALS Characteristics o f silicon doped low-energy ion implantation. K. E. MANCHESTERand C. B. SmLEY, Trans. Metall. Soc. AIME, 236, March (1966), p. 379. The feasibility of doping silicon to produce device structures by directly implanting impurity atoms has been demonstrated. Both phosphorous and boron ions have been successfully implanted in silicon to produce electrical junctions. Junctions as deep as 1-2 ~ have been produced by phosphorus ions having energies the order of 80 keV. An electromagnetic separator has been used to controllably produce uniform, large-area implantations for evaluation experimentation. Correlations between junction depths and ion energies have been obtained. Orientation effects have been observed and it has been found that the ~ 1 1 0 > direction is the easy