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Transport of hot carriers in semiconductor quantized inversion layers
World Abstracts on Microelectronics and Reliability fast development of MOS RAM in both cost per bit and bits per chip will also continue at a rapid rate. The emerging MBM technology as well as CCD and EBAM technologies must be competitive with semiconductor RAM's on one hand and disk technology on the other hand for successful market entry. This paper outlines how magnetic bubble memories can achieve status as a major mass storage technology. The key is the growth of microprocessor (MPU) based systems with resulting demand for low cost, small mass storage. MBM characteristics satisfy the requirements for microprocessor mass storage. A complete microcomputer on a chip. P. PITTMAN. Microelectrom Reliah. 16, 413 (1977). The M K 3870 from Mostek is a complete 8 bit microcomputer on a single MOS integrated circuit. Utilising state of the art, ion-implanted, n-channel silicon gate technology and advanced circuit design techniques, a truely versatile, cost effective microcomputer has been achieved. The device, however, does not stand alone; identical instruction sets giving both software and time compatibility with the existing F8 microprocessor allow expansion into multichip configurations suitable for both high and low volume production. A complete line of inexpensive hardware and software is offered which can be used to emulate or protoype the single chip microcomputer.
8086 microcomputer bridges the gap between 8- and 16-bit designs. B. JEFFREY KATZ, S. P. MORSE, W. B. POHLMAN
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and B. W. REVENEL. Electronics p. 99 (February 16, 1978). The Intel 8086, a new microcomputer, extends the midrange 8080 family into the 16-bit arena. The chip has attributes of both 8- and 16-bit processors. By executing the full set of 8080A/8085 8-bit instructions plus a powerful new set of 16-bit instructions, it enables a system designer familiar with existing 8080 devices to boost performance by a factor of as much as l0 while using essentially the same 8080 software package and development tools.
Powerful LSI devices bow at silver anniversary (Solid State Circuits Conference~ San Francisco). Electronics p. 116 (February 16, 1978). Three areas of chip technology stand out at this year's conference: digital, analog, and combinations of both for dedicated chip designs. In digital design, "denser, faster, cheaper, better" continues unabated. Being readied are 65,536-bit memories that will cut bit costs in half. Static random-access memories are moving ahead with 8,192-bit metal-oxidesemiconductor designs for microcomputers and 4,096-bit bipolar designs for cache memory. Then there are 1,000-gate logic arrays that operate at 3-nanosecond delays and, at the other end of the scale, 16-bit microcomputer chips that boost throughput and instruction-handling ability. In dedicated large-scale integration, the focus is on communications-coder-decoders (codecs). tone decoders, and fiber-optics transmitter and receiver chips. Indeed, this year's program devotes an entire session just to LSI codecs.
7. SEMICONDUCTORS INTEGRATED CIRCUITS, DEVICES AND MATERIALS Une nouvelle technique de croissance epitaxiale de couches ultraminces d'arseniure de gallium par cracking de comPoses organometalliques sous pression reduite. J. P. DUC~MIN, M. BONNET and D. HOYGHE. Revue Technique ThomsonCSF 9, (4) 685 (December 1977). (In French.) A new method of producing good quality epitaxial films of GaAs for microwave applications is described. The method is based on cracking of an organic compound of gallium in the presence of arsine, at a low pressure of 4(~100Torr. Determination of gold concentration and the effective impurity dopin1~ at the silicon/silicon-dioxide interface. G. R. MOGHAL. Int. J. Electronics 44, (2) 205 (1978). Gold diffusion in MOS structures was found to increase the number of acceptors in the substrate impurity doping. This increase was observed to be independent of the conductivity of the starting material. From 10 to 1000 rain diffusion time, the concentration of gold in the bulk silicon was found to be 0.1 1.0 times the substrate doping. Green's function calculating of electric fields in surfacechannel charge-coupled devices. R. M. BARSAN. Int. J. Electronics 44, (2) 177 (1978). The tangential component of the electrostatic field at the insulator-semiconductor interface of an MIS structure is studied by means of Green's function techniques. The two-dimensional problem is solved by taking into account the presence of the metallic gate, the dielectric discontinuity at the interface, the influence of the fixed ionized impurity atoms in the depiction region, and that of the mobile surface inversion charge. The theory derived is used to calculate the tangential field at the Si-SiO2 interface in a standard surface-channel chargecoupled device with co-planar electrodes. Special emphasis is placed upon the physical interpretation of the mathematical analysis. Transport of hot carriers in semiconductor quantized inversion layers. D. K. FERRY. Solid-St. Electron. 21, 115 (1978).
The transport of warm and hot carriers in quantized inversion layers has recently become of considerable interest, due in part to the quasi-two-dimentional nature of the carrier system and to the multitude of subbands present. Generally, the number of carriers in the inversion layer is sufficiently large that carrier-carrier scattering maintains a quasi-Maxwellian for the isotropic part of the distribution function, but the inter-subband interactions are sufficiently weak that each subband possesses a separate electron temperature. The treatment of carrier transport can be naturally separated into two regimes. In the first, the carriers are hot. In this regime, the transport can be found from energy and momentum balance equations and the transport differs little from a classical three-dimensional model, except in the field region in which inter-subband transfer of carriers is important. In this field range, subtle changes in the velocity-field curve are observed and significant effects are found in the microwave conductivity at frequencies on the order of the inter-subband repopulation rate. In the warm electron regime, however, for low and moderate electric fields, the degenerate nature of the carrier distribution function must be considered. Although the electron temperature concept remains valid in this regime, the agreement between theory and experiment is not good and the lack of this agreement makes it difficult to assess the physical processes occurring. The situation is complicated at low temperatures where many of the scattering mechanisms are not fully understood and the carrier densities and transport can show activation behavior. This lack of understanding is especially true in warm carrier magneto-transport. For this reason, care must be exercised in evaluating the role played by the electric field. In this paper, these various regimes are discussed and compared to the available experimental data.
A comparison of simple and numerical two-dimensional modesla for the threshold voltage of short channel MOSTS. D. J. COE, H. E. BROCKMANand K. H. NICHOLAS. Solid-St. Electron. 20, 993 (1977). The threshold voltage for short
8086 microcomputer bridges the gap between 8- and 16-bit designs. B. JEFFREY KATZ, S. P. MORSE, W. B. POHLMAN
423
and B. W. REVENEL. Electronics p. 99 (February 16, 1978). The Intel 8086, a new microcomputer, extends the midrange 8080 family into the 16-bit arena. The chip has attributes of both 8- and 16-bit processors. By executing the full set of 8080A/8085 8-bit instructions plus a powerful new set of 16-bit instructions, it enables a system designer familiar with existing 8080 devices to boost performance by a factor of as much as l0 while using essentially the same 8080 software package and development tools.
Powerful LSI devices bow at silver anniversary (Solid State Circuits Conference~ San Francisco). Electronics p. 116 (February 16, 1978). Three areas of chip technology stand out at this year's conference: digital, analog, and combinations of both for dedicated chip designs. In digital design, "denser, faster, cheaper, better" continues unabated. Being readied are 65,536-bit memories that will cut bit costs in half. Static random-access memories are moving ahead with 8,192-bit metal-oxidesemiconductor designs for microcomputers and 4,096-bit bipolar designs for cache memory. Then there are 1,000-gate logic arrays that operate at 3-nanosecond delays and, at the other end of the scale, 16-bit microcomputer chips that boost throughput and instruction-handling ability. In dedicated large-scale integration, the focus is on communications-coder-decoders (codecs). tone decoders, and fiber-optics transmitter and receiver chips. Indeed, this year's program devotes an entire session just to LSI codecs.
7. SEMICONDUCTORS INTEGRATED CIRCUITS, DEVICES AND MATERIALS Une nouvelle technique de croissance epitaxiale de couches ultraminces d'arseniure de gallium par cracking de comPoses organometalliques sous pression reduite. J. P. DUC~MIN, M. BONNET and D. HOYGHE. Revue Technique ThomsonCSF 9, (4) 685 (December 1977). (In French.) A new method of producing good quality epitaxial films of GaAs for microwave applications is described. The method is based on cracking of an organic compound of gallium in the presence of arsine, at a low pressure of 4(~100Torr. Determination of gold concentration and the effective impurity dopin1~ at the silicon/silicon-dioxide interface. G. R. MOGHAL. Int. J. Electronics 44, (2) 205 (1978). Gold diffusion in MOS structures was found to increase the number of acceptors in the substrate impurity doping. This increase was observed to be independent of the conductivity of the starting material. From 10 to 1000 rain diffusion time, the concentration of gold in the bulk silicon was found to be 0.1 1.0 times the substrate doping. Green's function calculating of electric fields in surfacechannel charge-coupled devices. R. M. BARSAN. Int. J. Electronics 44, (2) 177 (1978). The tangential component of the electrostatic field at the insulator-semiconductor interface of an MIS structure is studied by means of Green's function techniques. The two-dimensional problem is solved by taking into account the presence of the metallic gate, the dielectric discontinuity at the interface, the influence of the fixed ionized impurity atoms in the depiction region, and that of the mobile surface inversion charge. The theory derived is used to calculate the tangential field at the Si-SiO2 interface in a standard surface-channel chargecoupled device with co-planar electrodes. Special emphasis is placed upon the physical interpretation of the mathematical analysis. Transport of hot carriers in semiconductor quantized inversion layers. D. K. FERRY. Solid-St. Electron. 21, 115 (1978).
The transport of warm and hot carriers in quantized inversion layers has recently become of considerable interest, due in part to the quasi-two-dimentional nature of the carrier system and to the multitude of subbands present. Generally, the number of carriers in the inversion layer is sufficiently large that carrier-carrier scattering maintains a quasi-Maxwellian for the isotropic part of the distribution function, but the inter-subband interactions are sufficiently weak that each subband possesses a separate electron temperature. The treatment of carrier transport can be naturally separated into two regimes. In the first, the carriers are hot. In this regime, the transport can be found from energy and momentum balance equations and the transport differs little from a classical three-dimensional model, except in the field region in which inter-subband transfer of carriers is important. In this field range, subtle changes in the velocity-field curve are observed and significant effects are found in the microwave conductivity at frequencies on the order of the inter-subband repopulation rate. In the warm electron regime, however, for low and moderate electric fields, the degenerate nature of the carrier distribution function must be considered. Although the electron temperature concept remains valid in this regime, the agreement between theory and experiment is not good and the lack of this agreement makes it difficult to assess the physical processes occurring. The situation is complicated at low temperatures where many of the scattering mechanisms are not fully understood and the carrier densities and transport can show activation behavior. This lack of understanding is especially true in warm carrier magneto-transport. For this reason, care must be exercised in evaluating the role played by the electric field. In this paper, these various regimes are discussed and compared to the available experimental data.
A comparison of simple and numerical two-dimensional modesla for the threshold voltage of short channel MOSTS. D. J. COE, H. E. BROCKMANand K. H. NICHOLAS. Solid-St. Electron. 20, 993 (1977). The threshold voltage for short