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Twinning faults in epitaxial films of germanium telluride and GeTeSnTe alloys. (Germany)
Classified
abstracts
371-382
with thicknesses from the island stage to tens of microns is presented. On a single crystal substrate, for example of NaCl, a polycrystalline film of NaCl is deposited in vacuum. On this auxiliary film the investigated film is deposited, on which again an auxiliary film of NaCl is deposited. The investigated film is firmly fixed due to surface reliefs of the polycrystalline NaCl films. This composition is then cleaved perpendicularly to the condensate plane. The investigated film is broken in the determined zone due to the stresses in the auxiliary films. The cross-section of the film is investigated with the aid of replicas. The replicas can be obtained by electron-beam deposition of tantalum. Cross-sections of Al films are investigated using this method. II T Boyko et al, Zzv VUZ Fiz, No 5, 1972, 135-136 (in Russian). 30 371. Some electrical and photoelectric properties of single crystals and films of TlInSe,. (USSR) Properties of films and single crystals of TlInSe, are investigated and compared. Also data on the influence of certain impurities on the properties of the single crystals and films are presented. The single crystals were prepared by the Bridgman method. Films of TlInSe, were prepared on glass substrates by evaporation in vacuum of 10M5 torr from an open molybdenum boat. I A Karpovich et al, Zzv VUZ Fiz, No 5, 1972, 157-159 (in Russian). 30 372. Glass chambers for the preparation of thin films in vacuum. (Germany) Glass chambers of vacuum systems for deposition of thin films are described. Glass chambers are specially suitable for the sputtering method. Properties of glass for the manufacture of sputtering glass chambers are considered. G Reisse and H Schilling, Wiss Zeit Techn Hochsch Karl-Marx-Stadt, 12 (4), 1970, 529-533
(in German). 30
373. Preparation of GaN films by cathodic sputtering. (USSR) The possibility of synthesizing GaN thin films bv reactive cathodic sputtering is studied experimentally. GaN textured films have been synthesized in a vacuum system initially evacuated to 2 x 10eB torr. Cooled solid gallium was used as cathode. The sputtering process was performed in purified nitrogen. Single crystal n-type silicon plates were used as substrates. K V Malyutin and A A Veshkin, Neorg Mater, 8 (5), May 1972, 994 (in Russian). 374. Influence of electric field on the crystallization selenium. (USSR)
30 rate of amorphous
It is shown that an alternating electric field reduces the activation energy of crystallization of amorphous selenium films, 60 urn thick, deposited on aluminium substrates. The electric field also increases the rate of nucleation of spherulites and their rate of growth. I Kh Geller et al, Neorg Mater, 8 (6), JWW 1972, 1005-1007 375. Anisotropy of optical absorption dielectric sublayer. (USSR)
(in Russian).
in metallic films deposited
30 on a
Influence of evaporation conditions of the CaF, dielectric sublayer on the anisotropy of optical absorption in permalloy films deposited on them is investigated. In dielectric films deposited obliquely the anisotropy of optical absorption is not observed. However, metallic films deposited by evaporation on obliquely evaporated dielectric films exhibit the anisotropy of optical absorption. V M Gzogyan and V S Prokopenko, Zzv VUZ Fiz, No 5, 1972, 154156 (in Russian). 376. Twinning faults in epitaxial GeTeSnTe alloys. (Germany)
films of germanium
tellmide
30 and
Films of rhombohedral GeTe and GeTe,SnTel, alloys grown on KCl, although apparently single-crystal, contain a very high defect density. Films were grown by evaporation from an electron-gun source onto the (001) cleavage faces of KC1 substrates held at temperatures between 150 and 300°C. The pressure during evaporation rose from 5 x 10e9 to 3 x IO-@torr. The substrate surface was electron-bombarded during growth in an attempt to improve the epitaxy and sticking coefficient of the deposit. Various annealing techniques can be. used to grow relatively large single-crystal areas, separated by twin boundaries on (110) and (100) planes. Measurements of diffraction
patterns from twinned areas are used to plot the rhombohedral angle as a function of alloy composition. There is no evidence for the existence of a metastable cubic phase for x > 0.5 (England). J Stoemenos and R Vincent, Phys Stat Sol (a), 11 (2), June 1972, 545-558. 30 377. Electronic properties of the Si-SiO, interface as a function of oxide growth conditions. II. Fixed charge. (Germany) Silicon dioxide thermally grown on a silicon substrate contains some trapped charge depending mainly on the conditions of the last treatment. The charge density increases as the square root of oxygen pressure in the range of 1 to 70 torr and decreases with temperature. These results are interpreted on the basis of a heterojunction model. Fixed positive charge comes from ionized donor centres each one being associated with an interstitial oxygen molecule. (France). J L Pautrat 669-675.
and J C Pfister,
Phys Stat
Sol (a), 11 (2), June 1972, 30
378. Slow wall motion in oxidized
films. (Germany)
permalloy
Slow domain wall motion with velocity as small as 10m3 cm/s, persisting in liquid helium temperatures, is reported for an oxidized permalloy thin film. The permalloy film samples were vapour deposited in a vacuum of 10-O torr on glass substrates and oxidized for 6 hours at 250°C in a moist oxygen atmosphere. Films protected from oxidation or reduced in dry hydrogen after oxidation fail to exhibit this phenomenon at any temperature between 300 and 5°K. Observations are made using the magneto-optic Kerr effect with sample mounting in vacuum. The behaviour is closely correlated with the hysteresis loop contraction characteristic of the oxidized film at very low temperatures. (USA). S H Charap and E Fulcomer, Phys Stat Sol (a), 11 (2), June 1972, 559-565. 30 379. Progressive
graphitization
of amorphous
carbon. (USSR)
The progressive graphitization of amorphous carbon films was investigated by electrical conductivity measurements and optical transmission spectra. Amorphous carbon films, 10e5 cm thick, were prepared by thermal evaporation in vacuum. The films were illuminated by a gas-discharge lamp and their temperature rose to 1000°C during 300 to 500 us. Electron-graphic and electron-microscopic investigations showed that this treatment converts the amorphous carbon films into polycrystalline state. Electrical conductivity of the films was measured at ultrahigh frequencies in a waveguide. Experimental results are discussed. VP Zakharov (in Russian).
and V I Zalive, Neorg Mater,
8 (6), June 1972,999-1004 30
(USSR) Chemical composition and properties of In-Te crystalline films containing 33-45 atomic ok of Te are investigated, The films were prepared by simultaneous evaporation of the components from two independent linear evaporators on glass substrates. Only one phase corresponding to In, Te, is found. In, Te, is an anisotropic semiconductor with a forbidden band width of 0.48 eV at 18°C. Yu A Paukshte et al, Neorg Mater, 8 (6), June 1972, 1029-1034 (in 380. Investigation
of thin films of the system In-Te.
Russian). 381. Investigation of transmission spectra of polycrystalline quasi-binary CdSCdSe system. (USSR)
30 iilms of the
The transmission spectra of polycrystalline films of the CdS-CdSe system are investigated. Polycrystalline films of cadmium sulphurselenide solid solution 150 nm thick were prepared by vacuum sublimation on glass substrates at residual pressure of 5 x lo-’ torr. A N Krestovnikov et al, Neorg Muter, 8 (6), June 1972, 1150-l 151 (in Russian), 382. Structural peculiarities aluminium oxide. (USSR)
of plasma
and gas-flame
coatings
30 of
Structure of aluminium oxide coatings prepared by plasma or gasflame deposition was investigated using petrographic analysis, gas adsorption, electron microscopy and mercury porometry. The technique of preparing replicas of the coatings by vacuum evaporation for electron microscopy is described. T B Buzovkina et al, Neorg Mater, 8 (6), June 1972, 111 l-l 114 (in Russian). 149
abstracts
371-382
with thicknesses from the island stage to tens of microns is presented. On a single crystal substrate, for example of NaCl, a polycrystalline film of NaCl is deposited in vacuum. On this auxiliary film the investigated film is deposited, on which again an auxiliary film of NaCl is deposited. The investigated film is firmly fixed due to surface reliefs of the polycrystalline NaCl films. This composition is then cleaved perpendicularly to the condensate plane. The investigated film is broken in the determined zone due to the stresses in the auxiliary films. The cross-section of the film is investigated with the aid of replicas. The replicas can be obtained by electron-beam deposition of tantalum. Cross-sections of Al films are investigated using this method. II T Boyko et al, Zzv VUZ Fiz, No 5, 1972, 135-136 (in Russian). 30 371. Some electrical and photoelectric properties of single crystals and films of TlInSe,. (USSR) Properties of films and single crystals of TlInSe, are investigated and compared. Also data on the influence of certain impurities on the properties of the single crystals and films are presented. The single crystals were prepared by the Bridgman method. Films of TlInSe, were prepared on glass substrates by evaporation in vacuum of 10M5 torr from an open molybdenum boat. I A Karpovich et al, Zzv VUZ Fiz, No 5, 1972, 157-159 (in Russian). 30 372. Glass chambers for the preparation of thin films in vacuum. (Germany) Glass chambers of vacuum systems for deposition of thin films are described. Glass chambers are specially suitable for the sputtering method. Properties of glass for the manufacture of sputtering glass chambers are considered. G Reisse and H Schilling, Wiss Zeit Techn Hochsch Karl-Marx-Stadt, 12 (4), 1970, 529-533
(in German). 30
373. Preparation of GaN films by cathodic sputtering. (USSR) The possibility of synthesizing GaN thin films bv reactive cathodic sputtering is studied experimentally. GaN textured films have been synthesized in a vacuum system initially evacuated to 2 x 10eB torr. Cooled solid gallium was used as cathode. The sputtering process was performed in purified nitrogen. Single crystal n-type silicon plates were used as substrates. K V Malyutin and A A Veshkin, Neorg Mater, 8 (5), May 1972, 994 (in Russian). 374. Influence of electric field on the crystallization selenium. (USSR)
30 rate of amorphous
It is shown that an alternating electric field reduces the activation energy of crystallization of amorphous selenium films, 60 urn thick, deposited on aluminium substrates. The electric field also increases the rate of nucleation of spherulites and their rate of growth. I Kh Geller et al, Neorg Mater, 8 (6), JWW 1972, 1005-1007 375. Anisotropy of optical absorption dielectric sublayer. (USSR)
(in Russian).
in metallic films deposited
30 on a
Influence of evaporation conditions of the CaF, dielectric sublayer on the anisotropy of optical absorption in permalloy films deposited on them is investigated. In dielectric films deposited obliquely the anisotropy of optical absorption is not observed. However, metallic films deposited by evaporation on obliquely evaporated dielectric films exhibit the anisotropy of optical absorption. V M Gzogyan and V S Prokopenko, Zzv VUZ Fiz, No 5, 1972, 154156 (in Russian). 376. Twinning faults in epitaxial GeTeSnTe alloys. (Germany)
films of germanium
tellmide
30 and
Films of rhombohedral GeTe and GeTe,SnTel, alloys grown on KCl, although apparently single-crystal, contain a very high defect density. Films were grown by evaporation from an electron-gun source onto the (001) cleavage faces of KC1 substrates held at temperatures between 150 and 300°C. The pressure during evaporation rose from 5 x 10e9 to 3 x IO-@torr. The substrate surface was electron-bombarded during growth in an attempt to improve the epitaxy and sticking coefficient of the deposit. Various annealing techniques can be. used to grow relatively large single-crystal areas, separated by twin boundaries on (110) and (100) planes. Measurements of diffraction
patterns from twinned areas are used to plot the rhombohedral angle as a function of alloy composition. There is no evidence for the existence of a metastable cubic phase for x > 0.5 (England). J Stoemenos and R Vincent, Phys Stat Sol (a), 11 (2), June 1972, 545-558. 30 377. Electronic properties of the Si-SiO, interface as a function of oxide growth conditions. II. Fixed charge. (Germany) Silicon dioxide thermally grown on a silicon substrate contains some trapped charge depending mainly on the conditions of the last treatment. The charge density increases as the square root of oxygen pressure in the range of 1 to 70 torr and decreases with temperature. These results are interpreted on the basis of a heterojunction model. Fixed positive charge comes from ionized donor centres each one being associated with an interstitial oxygen molecule. (France). J L Pautrat 669-675.
and J C Pfister,
Phys Stat
Sol (a), 11 (2), June 1972, 30
378. Slow wall motion in oxidized
films. (Germany)
permalloy
Slow domain wall motion with velocity as small as 10m3 cm/s, persisting in liquid helium temperatures, is reported for an oxidized permalloy thin film. The permalloy film samples were vapour deposited in a vacuum of 10-O torr on glass substrates and oxidized for 6 hours at 250°C in a moist oxygen atmosphere. Films protected from oxidation or reduced in dry hydrogen after oxidation fail to exhibit this phenomenon at any temperature between 300 and 5°K. Observations are made using the magneto-optic Kerr effect with sample mounting in vacuum. The behaviour is closely correlated with the hysteresis loop contraction characteristic of the oxidized film at very low temperatures. (USA). S H Charap and E Fulcomer, Phys Stat Sol (a), 11 (2), June 1972, 559-565. 30 379. Progressive
graphitization
of amorphous
carbon. (USSR)
The progressive graphitization of amorphous carbon films was investigated by electrical conductivity measurements and optical transmission spectra. Amorphous carbon films, 10e5 cm thick, were prepared by thermal evaporation in vacuum. The films were illuminated by a gas-discharge lamp and their temperature rose to 1000°C during 300 to 500 us. Electron-graphic and electron-microscopic investigations showed that this treatment converts the amorphous carbon films into polycrystalline state. Electrical conductivity of the films was measured at ultrahigh frequencies in a waveguide. Experimental results are discussed. VP Zakharov (in Russian).
and V I Zalive, Neorg Mater,
8 (6), June 1972,999-1004 30
(USSR) Chemical composition and properties of In-Te crystalline films containing 33-45 atomic ok of Te are investigated, The films were prepared by simultaneous evaporation of the components from two independent linear evaporators on glass substrates. Only one phase corresponding to In, Te, is found. In, Te, is an anisotropic semiconductor with a forbidden band width of 0.48 eV at 18°C. Yu A Paukshte et al, Neorg Mater, 8 (6), June 1972, 1029-1034 (in 380. Investigation
of thin films of the system In-Te.
Russian). 381. Investigation of transmission spectra of polycrystalline quasi-binary CdSCdSe system. (USSR)
30 iilms of the
The transmission spectra of polycrystalline films of the CdS-CdSe system are investigated. Polycrystalline films of cadmium sulphurselenide solid solution 150 nm thick were prepared by vacuum sublimation on glass substrates at residual pressure of 5 x lo-’ torr. A N Krestovnikov et al, Neorg Muter, 8 (6), June 1972, 1150-l 151 (in Russian), 382. Structural peculiarities aluminium oxide. (USSR)
of plasma
and gas-flame
coatings
30 of
Structure of aluminium oxide coatings prepared by plasma or gasflame deposition was investigated using petrographic analysis, gas adsorption, electron microscopy and mercury porometry. The technique of preparing replicas of the coatings by vacuum evaporation for electron microscopy is described. T B Buzovkina et al, Neorg Mater, 8 (6), June 1972, 111 l-l 114 (in Russian). 149