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Two new approaches simplify testing of microprocessors
structures. The substrates were polycrystalline with millimetre size crystallites. Solar cells of the configurations n+-silicon/p-siliconl metallurgical silicon and n+-silicon/p+-siliconlmetaUurgical silicon were prepared by the thermal decomposition of silane and the thermal reduction of trichlorosilane containing appropriate dopants. The A M O efficiencies of n+-silicon/p-silieon/metallurgical silicon solar cellswere up to 2.8% (with no anti-reflection coatings) and were limited by the grain boundaries in the p-layer. The grain boundary effects were reduced by increasing the dopant concentration in the p-layer, and A M O efficiencies of about 3.5% were obtained from n +-silicon/p +-silicon/metallurgical silicon solar cells.
engineering, manufacturing, inspection, and maintenance of the product throughout its entire life. The thesis is that the electrical, electronic, thermal, mechanical, construction, test, and rework characteristics must be given proper weight at all points in the design. "This paper presents an argument for uncased packages of multichip large-scale integrated (LSI) devices as the best solution for the highreliability system applications presented here.
Polyimide supported micro-ramps for high density circuit interconnection J. J. LICARI, J. E. V A R G A and W. A. BAILEY SolidState Technololgy, p.41 (July 1976). A proess has been developed for the batch fabrication of both gold and aluminium 'micro-ramp" crossover networks. The micro-ramps are fully supported with polyimide insulation which is applied by screening. In addition, batch-fabricated precision nichrome resistors have been integrated with the crossover conductor network. The new process solves many of the problems inherent in the original air-gap microbridge process and expands its application to analog microcircuits.
Monolithic elastic surface wave amplifiers of continuous operation K. Y A M A N O U C H I and K. SHIBAYAMA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.493-496 (1977). Very thin InSb films for elastic surface wave amplifiers were prepared by a source-temperature-programmed evaporation method and their crystalline and electrical properties were studied. Optimum source and substrate temperatures to obtain stable thin films with good properties were investigated. A considerable improvement in the mobility of InSb films is observed by overlaying SiO film on the deposited InSb films. Moreover, their InSb thin films of width of about 97#m and length of 7ram were fabricated on 13t ° routed Y-cut X-propagation LiNbO 3 by using a photoetching technics. We obtained the thin films with drift mobility of 1,000cm2V-ls-1 and observed an electronic gain of 11.5 dB/Tmm at the continuous operation.
Dendritic growth of silicon thin films on alumina ceramic and their application to solar cells T. SAITOH, T. WARABISAKO, H. ITOH, N. NAKAMURA, H. T A M U R A , S. M I N A G A W A andT. TOKUYAMA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.413-416 (1977). Polycrystalline silicon films on alumina ceramic are recrystallised under normal freezing conditions. A multi-layered structure containing borosilicate glass and titanium layers is successfuIly used to prevent molten silicon films from agglomeration. The films obtained are dendritic and of mm size. Chemical etching reveals tilt boundaries, linear and dot-like defects in addition to grain boundaries. The thin film solar cells fabricated on the recrystallised silicon by successive deposition ofp and n + layers show photovoltaic conversion efficiencies of up to 2.6% at a fill factor of 0.67 under an AMI simulator. From the spectral response curves of the cells, the electron diffusion length of the p-type active layers is calculated to be lp.m and causes a low short circuit current density of 9.8mA/cm 2.
58MHz surface-acoustic-wave TV-intermediate-frequency filter using ZnO-sputtered film T. SHIOSAKI and A. KAWABATA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.483-486 (1977). The acoustic-surface-wave filter for the use of TV-intermediate frequency at 58MHz was fabricated using an rf-sputtered ZnO film overlying the interdigital electrodes and the wave path on a glass substrate, and its fundamental properties for practical application were studied. The average and easily reproducible insertion loss characteristics are as follows: 16dB at the minimum, 5(+16)dB at chromatic and picture signal carrier frequencies, 15(+ 16)dB at sound signal carrier frequency, more than 55(+16)dB at trap frequencies for adjacent channels, and 35(+16)dB at the maximum side lobe. The triple transit echo suppression is more than 35dB. The temperature coefficient of the frequency characteristic is less than -30ppm/°C. 500 days of aging has shown no significant change in the filter. Another type of filter for the use in USA is also fabricated by the same system.
10. Applications Static induction ioglc-A simple structure with very low switching energy and very high packing density J. N1SHIZAWA and B. M. WILAMOWSKI Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;Japanese Journal of Applied Physics, 16, Supplement 16-1, pp. 151-154 (1977). The new logic structure using static induction transistor is presented. This logic structure has very low delay-power product, and order below 0.01 pJ is possible. High current gain of presented transistor makes n-diffusion isolation layer between gates unnecessa~' and allows high packing density, higher than 1,000 gate/mm ~-. Standard technological process requires the 4-masking steps only, however 3mask technology is also presented. The case for muitichip LSI packaging of high-rellability military electronics W. A. FARRAND IEEE Transactions on Parts, Hybrids, and Packaging, PtlP-12, No. 4 (December 1976). Only by a judicious combination of compatible materials, technology. and "production of the art" can ruggedness,, reliability, versatility, and utilisation be realised. This choice can only be achieved through highquality system engineering which covers the architecture, detail
11. Testing Two new approaches simplify testing of microprocessors A. C. L. CHIANG and R. McCASKILL Electronics, p. 100 (January 22, 1976). Circuitry is divided into functional modules for checking as units; after sequences are devised to thoroughly exercise a digital IC, patterns are generated by algorithms to minimise storage needs. Automated test methods to check fast anlogne-to-digital converters R. H A V E N E R Electronic Engbzeering, p.57 (September 1976). Checking out the performance of high-speed and high-resolution converters can be an expensive, time-consuming task. This article presents the theory of operation and details a practical automatic analogue-to-digital tester. Robert Havener says the design combines both high-accuracy dc measurements and jitter-free graphic display, while operating in a fast dynamic mode. Turning up system faults with gated-noise testing N. E. CHASEK Electronics, p.91 (January 1976). Monitoring parameter changes and system performance when burst and square-wave-modulated noise is injected into communications and radar systems enables operators to detct deterioration and developing faults.
engineering, manufacturing, inspection, and maintenance of the product throughout its entire life. The thesis is that the electrical, electronic, thermal, mechanical, construction, test, and rework characteristics must be given proper weight at all points in the design. "This paper presents an argument for uncased packages of multichip large-scale integrated (LSI) devices as the best solution for the highreliability system applications presented here.
Polyimide supported micro-ramps for high density circuit interconnection J. J. LICARI, J. E. V A R G A and W. A. BAILEY SolidState Technololgy, p.41 (July 1976). A proess has been developed for the batch fabrication of both gold and aluminium 'micro-ramp" crossover networks. The micro-ramps are fully supported with polyimide insulation which is applied by screening. In addition, batch-fabricated precision nichrome resistors have been integrated with the crossover conductor network. The new process solves many of the problems inherent in the original air-gap microbridge process and expands its application to analog microcircuits.
Monolithic elastic surface wave amplifiers of continuous operation K. Y A M A N O U C H I and K. SHIBAYAMA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.493-496 (1977). Very thin InSb films for elastic surface wave amplifiers were prepared by a source-temperature-programmed evaporation method and their crystalline and electrical properties were studied. Optimum source and substrate temperatures to obtain stable thin films with good properties were investigated. A considerable improvement in the mobility of InSb films is observed by overlaying SiO film on the deposited InSb films. Moreover, their InSb thin films of width of about 97#m and length of 7ram were fabricated on 13t ° routed Y-cut X-propagation LiNbO 3 by using a photoetching technics. We obtained the thin films with drift mobility of 1,000cm2V-ls-1 and observed an electronic gain of 11.5 dB/Tmm at the continuous operation.
Dendritic growth of silicon thin films on alumina ceramic and their application to solar cells T. SAITOH, T. WARABISAKO, H. ITOH, N. NAKAMURA, H. T A M U R A , S. M I N A G A W A andT. TOKUYAMA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.413-416 (1977). Polycrystalline silicon films on alumina ceramic are recrystallised under normal freezing conditions. A multi-layered structure containing borosilicate glass and titanium layers is successfuIly used to prevent molten silicon films from agglomeration. The films obtained are dendritic and of mm size. Chemical etching reveals tilt boundaries, linear and dot-like defects in addition to grain boundaries. The thin film solar cells fabricated on the recrystallised silicon by successive deposition ofp and n + layers show photovoltaic conversion efficiencies of up to 2.6% at a fill factor of 0.67 under an AMI simulator. From the spectral response curves of the cells, the electron diffusion length of the p-type active layers is calculated to be lp.m and causes a low short circuit current density of 9.8mA/cm 2.
58MHz surface-acoustic-wave TV-intermediate-frequency filter using ZnO-sputtered film T. SHIOSAKI and A. KAWABATA Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.483-486 (1977). The acoustic-surface-wave filter for the use of TV-intermediate frequency at 58MHz was fabricated using an rf-sputtered ZnO film overlying the interdigital electrodes and the wave path on a glass substrate, and its fundamental properties for practical application were studied. The average and easily reproducible insertion loss characteristics are as follows: 16dB at the minimum, 5(+16)dB at chromatic and picture signal carrier frequencies, 15(+ 16)dB at sound signal carrier frequency, more than 55(+16)dB at trap frequencies for adjacent channels, and 35(+16)dB at the maximum side lobe. The triple transit echo suppression is more than 35dB. The temperature coefficient of the frequency characteristic is less than -30ppm/°C. 500 days of aging has shown no significant change in the filter. Another type of filter for the use in USA is also fabricated by the same system.
10. Applications Static induction ioglc-A simple structure with very low switching energy and very high packing density J. N1SHIZAWA and B. M. WILAMOWSKI Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976;Japanese Journal of Applied Physics, 16, Supplement 16-1, pp. 151-154 (1977). The new logic structure using static induction transistor is presented. This logic structure has very low delay-power product, and order below 0.01 pJ is possible. High current gain of presented transistor makes n-diffusion isolation layer between gates unnecessa~' and allows high packing density, higher than 1,000 gate/mm ~-. Standard technological process requires the 4-masking steps only, however 3mask technology is also presented. The case for muitichip LSI packaging of high-rellability military electronics W. A. FARRAND IEEE Transactions on Parts, Hybrids, and Packaging, PtlP-12, No. 4 (December 1976). Only by a judicious combination of compatible materials, technology. and "production of the art" can ruggedness,, reliability, versatility, and utilisation be realised. This choice can only be achieved through highquality system engineering which covers the architecture, detail
11. Testing Two new approaches simplify testing of microprocessors A. C. L. CHIANG and R. McCASKILL Electronics, p. 100 (January 22, 1976). Circuitry is divided into functional modules for checking as units; after sequences are devised to thoroughly exercise a digital IC, patterns are generated by algorithms to minimise storage needs. Automated test methods to check fast anlogne-to-digital converters R. H A V E N E R Electronic Engbzeering, p.57 (September 1976). Checking out the performance of high-speed and high-resolution converters can be an expensive, time-consuming task. This article presents the theory of operation and details a practical automatic analogue-to-digital tester. Robert Havener says the design combines both high-accuracy dc measurements and jitter-free graphic display, while operating in a fast dynamic mode. Turning up system faults with gated-noise testing N. E. CHASEK Electronics, p.91 (January 1976). Monitoring parameter changes and system performance when burst and square-wave-modulated noise is injected into communications and radar systems enables operators to detct deterioration and developing faults.