- Email: [email protected]
UEC orders Aixtron MOCVD
Helsinki & Harvard buy Thomas Swan MOCVD
UEC orders Aixtron MOCVD United Epitaxy Compan~
t h r o u g h p u t production systems
(UEC) based in Hsinchu and
tinder full production, we nmv
( loscd Coupled S h o w e r h e a d
Tainan,Taiwan has ordered
haxe the p r o o f that w e can
F.tluipmcilt (TSSF.) has -,old a 3x2-
(;aN M()CV1) system at Harvard
a n o t h e r A I X 26OOG3 24 x 2-
ensure and ltlrther improve otlr
inch Close Coupled Shlrwcrhcad
t q~iversity in the Nanoscience
inch ttT MOCVI) Planetary
leading edge in nitride-based
Thomas bwan Scientilit
(CCS) MOCVI) system INN
and Nanolechnology Research
Reactor to furtller r a m p up
LE1) p r o d u c t s with ultra-high
Helsinki l lniversit.v ol ]cchnolog)
(;enter for the g r o u p of
p r o d n c t i o n of lll-nitride ultra-
brightness, ;it even more
designed lot the growth of(,~b\s
Professor Charles l.ieber fi)r the
high-brightness yellow, blue
remarkably reduced running
and (tan based inaterials
groveth of a broad range of
and green I,E1)s.
costs.This is one of the ke'~ f:tc-
re;ride based nanoscale photonThe CCS system will bc used liNr
ic alld electronic structures.
Ihe research of :ltlvallced seilli-
C(NIIdtlcIOF strucl;urcs used ill
The ttarvard g r o u p is an R&I)
optoelectronics and li)r Ol)limis-
e x p o n e n t in controlled g r o w t h
ing tile growth of gl'otip ![l
of Selllieonductor natlov¢ires to
nitridcs based on silio,n . u b -
provide well-defined nanoscale
Stnlles. ()El. will also li >cus on the
building blocks for the assem-
development ot dilute nit rides,
bly of mum-devices, l s i n g this
such as (;aAsN alld (;ahlAsN tint
approach the Lieber g r o u p has
(iaAs-hased
emil;lets al %%;1%e-
demonstrated devices ranging
lengths Nil' 13 aud l.S~,~am, t;irwt-
flx)m ultrahigh p e r | b r m a n c e
tots thai is driving I,EI) market 'Based on o n r e x p e r i e n c e rising
development," said ( ; Tu, presi-
A i x t r o n s 2 4 x 2-inch high
dent of UF.C.
EpiWorks offer 808nm laser epiwafers
Atmel and Newcastle work on strained Si
EpiWnrks, INN:.has a n n o u n c e d a high-performancc 808nm (;aAs laser wali:r.
ing advanced &.vices IOr metro-
nanoscak: transistors and inte-
'GaAs-based F,OSmn lasers are a
politan area networks and optical
grated logic to the world's
necessity [i)r rlunlerotlS intlustri-
intereonnects al these Itqecolll-
smallest LEI)s with emission
mnnication wax ek*ngl hs
front [ rv with GaN to near IR
Atmel is w o r k i n g w i t h a team
al applications such :is marking.
of r e s e a r c h e r s ;it Newcastle
with lnP nanowires, and recentProR:ssor [tarr~ Lipsallerl from
ly injection lasers based on sin-
Helsinki tnixe,rsitx o i
gle n a n o w i r e active cavities.
coding and soldering7 sakl
1_ni~.ersity in the 1/K to devel
l)ax id Ahmari. Executive VP ;it
n p a strained silicon p r o c e s s
EpiWorks.Typical production
lor p r o d u c t i o n . T h e project
data from Epi\~orks
will be based at A t m d s lab
Technolog) said"The p r m e n
AIGaAs/GaAs 808 nm industrial
near Newcastle, and ,,,<'ill
process characteristics and
Prntcssor Lieber said "The TSSE
reproducibilit) of thc TSSI! (;( iS
system should provide a qnan-
reactors enable us 1,.; have a
turn jump li~rward in the cnn-
giant ad%,ancclllelll ill our tech-
trnlled grow,'th of (;;iN based
nology.The developn~en! of the
nanowircs and next generation
The first phase will involve
were taken lr(Nnl a laser bar tllal
nev¢ in-situ opl:ical nionilt)ring
n a n o w i r c heterostructures, and
integrating strained silicon into
employed 46 emitters with an
tool is all imp~ wtant illeallS ik)N"
is tlaereby expected to enable
Atmel's CMOS process, and is
80-micron stripe width and a 1
the fabrication of st;tie olqhe-art
very substantial advances rang-
e x p e c t e d to take about a year.
m m cavity lenglh, l.aser bars
dilute nitrides
ing fl-om high ntobili D' electron-
O t h e r players in the field
utilising Epi~'orks wafers also
ic dexices to the assemb b of
include IBM, lntel,Aixtron and
demonstrate excellent reliabili-
TSSE is also al~out to completc
multi-coh)r UV-VIS n a n o w i r e
AnlbcrWave. working with
ty, and neglilzible degradation
the installation of at ~,x2-inch
[.El) and laser arrays."
b o t h A M D and UMC.
alter 120(1 h o u r s of lilt' testing.
structures
laser cnstonlers incltldes all ()tit
involxe a te;lm of five
put p o w e r of 20W. slope effi
r e s e a r c h e r s lead by Professor
ciencv of 1. 1%X/A and a thresh-
A n t h o n y O'Neill.
old current o1'-.qA.The data
d ii~' ii ~;~k ~!!~/~i~ .. d v i n E adv,-:,nced c o m p o u n d
semiconductor
¸
technology into the future
Custom Epitaxy & Characterisation Custom Device Fabrication & Test High Performance Thermal Imaging High Speed, Low Power Electronics High Power, High Temperature Electronics Magnetic Field Sensing Technology Gas Sensing Technology
_
Tel: ÷44 1684 895365 Email: tjphilli [email protected] Web: www.qinetiq-q uest.com
1
lll-Vs REVIEW
. . . . .
....
....
VOL16 - NO 2 - MARCH 20o3
21
UEC orders Aixtron MOCVD United Epitaxy Compan~
t h r o u g h p u t production systems
(UEC) based in Hsinchu and
tinder full production, we nmv
( loscd Coupled S h o w e r h e a d
Tainan,Taiwan has ordered
haxe the p r o o f that w e can
F.tluipmcilt (TSSF.) has -,old a 3x2-
(;aN M()CV1) system at Harvard
a n o t h e r A I X 26OOG3 24 x 2-
ensure and ltlrther improve otlr
inch Close Coupled Shlrwcrhcad
t q~iversity in the Nanoscience
inch ttT MOCVI) Planetary
leading edge in nitride-based
Thomas bwan Scientilit
(CCS) MOCVI) system INN
and Nanolechnology Research
Reactor to furtller r a m p up
LE1) p r o d u c t s with ultra-high
Helsinki l lniversit.v ol ]cchnolog)
(;enter for the g r o u p of
p r o d n c t i o n of lll-nitride ultra-
brightness, ;it even more
designed lot the growth of(,~b\s
Professor Charles l.ieber fi)r the
high-brightness yellow, blue
remarkably reduced running
and (tan based inaterials
groveth of a broad range of
and green I,E1)s.
costs.This is one of the ke'~ f:tc-
re;ride based nanoscale photonThe CCS system will bc used liNr
ic alld electronic structures.
Ihe research of :ltlvallced seilli-
C(NIIdtlcIOF strucl;urcs used ill
The ttarvard g r o u p is an R&I)
optoelectronics and li)r Ol)limis-
e x p o n e n t in controlled g r o w t h
ing tile growth of gl'otip ![l
of Selllieonductor natlov¢ires to
nitridcs based on silio,n . u b -
provide well-defined nanoscale
Stnlles. ()El. will also li >cus on the
building blocks for the assem-
development ot dilute nit rides,
bly of mum-devices, l s i n g this
such as (;aAsN alld (;ahlAsN tint
approach the Lieber g r o u p has
(iaAs-hased
emil;lets al %%;1%e-
demonstrated devices ranging
lengths Nil' 13 aud l.S~,~am, t;irwt-
flx)m ultrahigh p e r | b r m a n c e
tots thai is driving I,EI) market 'Based on o n r e x p e r i e n c e rising
development," said ( ; Tu, presi-
A i x t r o n s 2 4 x 2-inch high
dent of UF.C.
EpiWorks offer 808nm laser epiwafers
Atmel and Newcastle work on strained Si
EpiWnrks, INN:.has a n n o u n c e d a high-performancc 808nm (;aAs laser wali:r.
ing advanced &.vices IOr metro-
nanoscak: transistors and inte-
'GaAs-based F,OSmn lasers are a
politan area networks and optical
grated logic to the world's
necessity [i)r rlunlerotlS intlustri-
intereonnects al these Itqecolll-
smallest LEI)s with emission
mnnication wax ek*ngl hs
front [ rv with GaN to near IR
Atmel is w o r k i n g w i t h a team
al applications such :is marking.
of r e s e a r c h e r s ;it Newcastle
with lnP nanowires, and recentProR:ssor [tarr~ Lipsallerl from
ly injection lasers based on sin-
Helsinki tnixe,rsitx o i
gle n a n o w i r e active cavities.
coding and soldering7 sakl
1_ni~.ersity in the 1/K to devel
l)ax id Ahmari. Executive VP ;it
n p a strained silicon p r o c e s s
EpiWorks.Typical production
lor p r o d u c t i o n . T h e project
data from Epi\~orks
will be based at A t m d s lab
Technolog) said"The p r m e n
AIGaAs/GaAs 808 nm industrial
near Newcastle, and ,,,<'ill
process characteristics and
Prntcssor Lieber said "The TSSE
reproducibilit) of thc TSSI! (;( iS
system should provide a qnan-
reactors enable us 1,.; have a
turn jump li~rward in the cnn-
giant ad%,ancclllelll ill our tech-
trnlled grow,'th of (;;iN based
nology.The developn~en! of the
nanowircs and next generation
The first phase will involve
were taken lr(Nnl a laser bar tllal
nev¢ in-situ opl:ical nionilt)ring
n a n o w i r c heterostructures, and
integrating strained silicon into
employed 46 emitters with an
tool is all imp~ wtant illeallS ik)N"
is tlaereby expected to enable
Atmel's CMOS process, and is
80-micron stripe width and a 1
the fabrication of st;tie olqhe-art
very substantial advances rang-
e x p e c t e d to take about a year.
m m cavity lenglh, l.aser bars
dilute nitrides
ing fl-om high ntobili D' electron-
O t h e r players in the field
utilising Epi~'orks wafers also
ic dexices to the assemb b of
include IBM, lntel,Aixtron and
demonstrate excellent reliabili-
TSSE is also al~out to completc
multi-coh)r UV-VIS n a n o w i r e
AnlbcrWave. working with
ty, and neglilzible degradation
the installation of at ~,x2-inch
[.El) and laser arrays."
b o t h A M D and UMC.
alter 120(1 h o u r s of lilt' testing.
structures
laser cnstonlers incltldes all ()tit
involxe a te;lm of five
put p o w e r of 20W. slope effi
r e s e a r c h e r s lead by Professor
ciencv of 1. 1%X/A and a thresh-
A n t h o n y O'Neill.
old current o1'-.qA.The data
d ii~' ii ~;~k ~!!~/~i~ .. d v i n E adv,-:,nced c o m p o u n d
semiconductor
¸
technology into the future
Custom Epitaxy & Characterisation Custom Device Fabrication & Test High Performance Thermal Imaging High Speed, Low Power Electronics High Power, High Temperature Electronics Magnetic Field Sensing Technology Gas Sensing Technology
_
Tel: ÷44 1684 895365 Email: tjphilli [email protected] Web: www.qinetiq-q uest.com
1
lll-Vs REVIEW
. . . . .
....
....
VOL16 - NO 2 - MARCH 20o3
21