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UHV outgassing measurements on various carbons
Classified abstracts 696-710 33 696. Optical and photoelectric properties of phosphor-nickel thin films
in relation to their structure. (France) The influence of stabilising annealing on the optical and photoelectric emission of P-Ni deposits is studied. It is demonstrated that the films have different optical and photoelectrical properties from those of pure nickel. Their evolution with the annealing temperature shows the structural transformations undergone by the deposits during these treatments. Fowler’s theory is verified. The quantum yield is tightly bound with the evolution of the work function and the photoionisation coefficient. J Flechon and M-T Mas, Vide, 27 (161), Sepr/Oct 1972, 214-218 (in French). 37. METALLURGY, CAL CHEMISTRY
INORGANIC
CHEMISTRY,
ANALYTI-
37 697. A versatile vacuum induction furnace for unidirectional solidification studies. (France) An rf zone-melting apparatus is described, working under a 1 ptorr vacuum and suitable for the unidirectional solidification of eutectics with melting points higher than 1200°C. The solidification rate can be continuously adjusted between 0.1 and 450 cm h-‘. The use of an eddy-current concentrator makes easier the obtaining of large thermogradients. A gas quenching device proved suitable for further studies of the solid-liquid interface morphology. M Prud’homme and F Dabosi._J Phys _ E: Scienr Znstrum, 6 (1). Jan 1973,96-97. 37 698. Advanced thin-film metallurgy for beam-leaded integratedcircuits.
W-9 Interconnection metallizations of integrated circuits must exhibit good ohmic contact, chemical inertness, low atomic mobility, good adherence, high conductivity, and compatibility with metal-dielectric multilayering. This paper describes a multimetal interconnection system which provides both multilayer interconnections and beam leads. The film stack includes combinations of the following layers, depending on the specific functional surface area: platinum silicide, silicon dioxide, molybdenum, silicon nitride, chromium, titanium, platinum, gold and glass. Chemical surface reaction, vapour deposition, cathode sputtering, and electroplating have been employed as deposition methods. Fabrication processes as well as test results obtained on complex integrated circuits are discussed in detail. H E Culver et al, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 170-175. 37 699. Plasma silicon niti~mg and iron boriding. (USA) Plasma hardening of silicon and iron surfaces was investigated to determine if such processing can provide any advantage over conventional methods. In particular, can suitably hardened surfaces be achieved at lower temperatures or with shorter process times? On solid silicon a nitride case (-0.0002 in.) forms when the sample is heated for 2 h at 1420°C in a nitrogen plasma at about 5 torr. The rate at which the nitrogen diffuses into the solid silicon is greatly reduced once the case-has formed. Boriding experiments on iron showed a 0.003-in. case is formed on compressed 1080 iron powder when treated at 780°C in a boron trichloride plasma for 4 h. For these results the principal hardened layer appeared slightly below the surface and was predominantly Fe2B, contrary to the results of Lyakhovich et al [Metal Sci and Heat Treat Metals (USSR) 19691. These results show no advantage for hardening of silicon by plasma nitriding. However, iron may be plasma borided in comparable times at a lower temperature than by conventional means. F E Gifford, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jm/Feb 1973, 85588. 37 700. Membranes for separation processes. (USA) W J Ward, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci TechnoI, 10 (l), Jan/Feb 1973, 279. 37 701. Ordered adsorbed phasea and heterogeneotls catalysis. (Germany) G Ertl, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci Tech&, 10 (l), JanjFeb 1973, 281. 346
702. New developments in plasmarc melting of metals and alloys. (USA) G K Bhat, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Tech&, 10 (l), Jan/Feb 1973, 271. 37 703. Surface blistering of polycrystalliie niobium by helium-ion implantation. (USA) S K Das and M Kamlnsky, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973,273. 37 704. Kinetics of dissociative adsorption at a metal surface (USA) C N Stewart and G Ehrlich, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (I), Jan/Feb 1973, 282. 37 705. Application of thermal desorption methods in studies of catalysis: the ox&l&ion of carbon monoxideon platinum. (USA) W L Winterbottom, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 282. 39. MISCELLANEOUS APPLICATIONS 39 706. A spectroscopic monitor for sputter-etching processes. (USA) Sputter-etching is a convenient technique for metal pattern generation on complex integrated circuits. It is particularly advantageous for multimetal systems because it completely eliminates the possibility of undercutting of the lower metal layers as can occur with chemical etching. A real-time monitoring system has been developed for monitoring the sputter-etching process when it is used for metal pattern generation with a beam lead metallization system consisting of titanium, platinum (or palladium), and gold. The intensity of the uv atomic radiation emitted by sputter-etched atoms which are excited in the sputtering discharge is monitored. The system has been used with both triode and diode types of sputter-etching systems and can reliably be used to tell when a given metal layer has been completely removed. A detailed description of the monitoring system and its performance is given. T Bernstein and E F Labuda, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Tech&, 10 (l), Jan/Feb 1973, 108-114. 39 707. Ultratrace analyses of mixtures such as air/breath as biomedical tools. (USA) N Milleron and W H Greiman, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 280.
IV. Materials and techniques vacuum technology
used in
47. OUTGASSING DATA, VAPOUR PRESSURE DATA, GETTERING DATA, RESIDUAL GASES IN VACUUM SYSTEMS, RESIDUAL GAS ANALYSIS 41
708. UHV outgassing measurements on various carbons. (USA) Mass spectral analyses were made of gases desorbed from carbon samples at increasing temperatures up to 220°K. Samples were initially outgassed above 2000 K, exposed to air for several hours at room temperature, and then tested in ultrahigh vacuum following a 24-h bake at 300°C. Four forms of carbon were tested (a) pyrolytic carbon, (b) GrafoilTM (Union Carbide), (c) vitreous carbon and (d) pyrolyzed-phenolic fibers. The equivalent of several monolayers of gas (mostly HI and CO) are evolved from all of the carbons except vitreous carbon. Less than a monolayer of gas is evolved from vitreous carbon during outgassing to 2000 K. G A Beitel and D K Benson, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973,201-203. 47 709. Permeation and outgassing of vacuum materials. (USA) W G Perkins, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci Technol, 10 (l), Jan/Fe6 1973, 290. 47 710. Use of an automated (FtGA) for thin film processes. (USA) R A BeaIs, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 291.
in relation to their structure. (France) The influence of stabilising annealing on the optical and photoelectric emission of P-Ni deposits is studied. It is demonstrated that the films have different optical and photoelectrical properties from those of pure nickel. Their evolution with the annealing temperature shows the structural transformations undergone by the deposits during these treatments. Fowler’s theory is verified. The quantum yield is tightly bound with the evolution of the work function and the photoionisation coefficient. J Flechon and M-T Mas, Vide, 27 (161), Sepr/Oct 1972, 214-218 (in French). 37. METALLURGY, CAL CHEMISTRY
INORGANIC
CHEMISTRY,
ANALYTI-
37 697. A versatile vacuum induction furnace for unidirectional solidification studies. (France) An rf zone-melting apparatus is described, working under a 1 ptorr vacuum and suitable for the unidirectional solidification of eutectics with melting points higher than 1200°C. The solidification rate can be continuously adjusted between 0.1 and 450 cm h-‘. The use of an eddy-current concentrator makes easier the obtaining of large thermogradients. A gas quenching device proved suitable for further studies of the solid-liquid interface morphology. M Prud’homme and F Dabosi._J Phys _ E: Scienr Znstrum, 6 (1). Jan 1973,96-97. 37 698. Advanced thin-film metallurgy for beam-leaded integratedcircuits.
W-9 Interconnection metallizations of integrated circuits must exhibit good ohmic contact, chemical inertness, low atomic mobility, good adherence, high conductivity, and compatibility with metal-dielectric multilayering. This paper describes a multimetal interconnection system which provides both multilayer interconnections and beam leads. The film stack includes combinations of the following layers, depending on the specific functional surface area: platinum silicide, silicon dioxide, molybdenum, silicon nitride, chromium, titanium, platinum, gold and glass. Chemical surface reaction, vapour deposition, cathode sputtering, and electroplating have been employed as deposition methods. Fabrication processes as well as test results obtained on complex integrated circuits are discussed in detail. H E Culver et al, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 170-175. 37 699. Plasma silicon niti~mg and iron boriding. (USA) Plasma hardening of silicon and iron surfaces was investigated to determine if such processing can provide any advantage over conventional methods. In particular, can suitably hardened surfaces be achieved at lower temperatures or with shorter process times? On solid silicon a nitride case (-0.0002 in.) forms when the sample is heated for 2 h at 1420°C in a nitrogen plasma at about 5 torr. The rate at which the nitrogen diffuses into the solid silicon is greatly reduced once the case-has formed. Boriding experiments on iron showed a 0.003-in. case is formed on compressed 1080 iron powder when treated at 780°C in a boron trichloride plasma for 4 h. For these results the principal hardened layer appeared slightly below the surface and was predominantly Fe2B, contrary to the results of Lyakhovich et al [Metal Sci and Heat Treat Metals (USSR) 19691. These results show no advantage for hardening of silicon by plasma nitriding. However, iron may be plasma borided in comparable times at a lower temperature than by conventional means. F E Gifford, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jm/Feb 1973, 85588. 37 700. Membranes for separation processes. (USA) W J Ward, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci TechnoI, 10 (l), Jan/Feb 1973, 279. 37 701. Ordered adsorbed phasea and heterogeneotls catalysis. (Germany) G Ertl, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci Tech&, 10 (l), JanjFeb 1973, 281. 346
702. New developments in plasmarc melting of metals and alloys. (USA) G K Bhat, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Tech&, 10 (l), Jan/Feb 1973, 271. 37 703. Surface blistering of polycrystalliie niobium by helium-ion implantation. (USA) S K Das and M Kamlnsky, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973,273. 37 704. Kinetics of dissociative adsorption at a metal surface (USA) C N Stewart and G Ehrlich, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (I), Jan/Feb 1973, 282. 37 705. Application of thermal desorption methods in studies of catalysis: the ox&l&ion of carbon monoxideon platinum. (USA) W L Winterbottom, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 282. 39. MISCELLANEOUS APPLICATIONS 39 706. A spectroscopic monitor for sputter-etching processes. (USA) Sputter-etching is a convenient technique for metal pattern generation on complex integrated circuits. It is particularly advantageous for multimetal systems because it completely eliminates the possibility of undercutting of the lower metal layers as can occur with chemical etching. A real-time monitoring system has been developed for monitoring the sputter-etching process when it is used for metal pattern generation with a beam lead metallization system consisting of titanium, platinum (or palladium), and gold. The intensity of the uv atomic radiation emitted by sputter-etched atoms which are excited in the sputtering discharge is monitored. The system has been used with both triode and diode types of sputter-etching systems and can reliably be used to tell when a given metal layer has been completely removed. A detailed description of the monitoring system and its performance is given. T Bernstein and E F Labuda, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Tech&, 10 (l), Jan/Feb 1973, 108-114. 39 707. Ultratrace analyses of mixtures such as air/breath as biomedical tools. (USA) N Milleron and W H Greiman, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 280.
IV. Materials and techniques vacuum technology
used in
47. OUTGASSING DATA, VAPOUR PRESSURE DATA, GETTERING DATA, RESIDUAL GASES IN VACUUM SYSTEMS, RESIDUAL GAS ANALYSIS 41
708. UHV outgassing measurements on various carbons. (USA) Mass spectral analyses were made of gases desorbed from carbon samples at increasing temperatures up to 220°K. Samples were initially outgassed above 2000 K, exposed to air for several hours at room temperature, and then tested in ultrahigh vacuum following a 24-h bake at 300°C. Four forms of carbon were tested (a) pyrolytic carbon, (b) GrafoilTM (Union Carbide), (c) vitreous carbon and (d) pyrolyzed-phenolic fibers. The equivalent of several monolayers of gas (mostly HI and CO) are evolved from all of the carbons except vitreous carbon. Less than a monolayer of gas is evolved from vitreous carbon during outgassing to 2000 K. G A Beitel and D K Benson, (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973,201-203. 47 709. Permeation and outgassing of vacuum materials. (USA) W G Perkins, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vuc Sci Technol, 10 (l), Jan/Fe6 1973, 290. 47 710. Use of an automated (FtGA) for thin film processes. (USA) R A BeaIs, Abstract. (Proc 19th Nat Symp Am Vat Sot) J Vat Sci Technol, 10 (l), Jan/Feb 1973, 291.