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Valence-band deformation potentials for the III–V compounds
128
WORLD
ABSTRACTS
ON MICROELECTRONICS
point to the serious possibility that some reported phenomena in semiconductor devices can be understood as edge-stress dependent processes.
Complex MOS circuit arrays. CARROLL R. PERKINS, Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 475. During the past several months, the trade journals have had numerous discussions concerning the Metal Oxide Semiconductor technology as applied to various complex device structures. In fact, the realm of complexity of these MOS arrays has achieved portions where the arrays are often discussed as entire subsystems. Several manufacturers claim complete desk calculators can be manufactured with as few as three complex MOS arrays. It is worthy to note that most of these discussions of MOS complex arrays have centered around high volume arrays envisioned for computer main frames and peripheral equipment. Whereas it is true that the densest arrays are the Read-Only-Memories, this author wishes to ignore the more published computer applications during this discussion and concentrate on applications concerning commercial counter circuits. The MOS technology lends itself to the repetitive structure associated with many counter applications. The following paper will discuss the application of this MOS technology to some typical commercial counter problems and a novel approach for generating digitally the horizontal and vertical synchronizing signals common to commercial television receivers. Valence-band
deformation
potentials
for
the
III-V c o m p o u n d s . J. D. WILEY, Solid State Commun. 8 (1970), p. 1865. It has recently been shown that the lattice mobility of holes in I I I - V compounds is limited primarily by acoustic and nonpolar optical mode scattering. The strength of these scattering mechanisms is determined by the coupling parameters E a c and ENPO. It is shown here that EAC and E x e o can be related to the fundamental valence-band deformation potentials a, b, d and do. Calculated values of EAC and ENp o are shown to be in good agreement with experimental values previously reported for Ge, Si, GaP, GaAs, InP, and A1Sb.
Inversion layers in abrupt p-n junctions. F. VAN DE WIELE and E. DEMOULIN, Solid-State Electron. 13 (1970), p. 717. The existence of an inversion layer near the metallurgical junction of abrupt asymmetrical p - n junctions is examined by means of a simple model, valid for reverse bias. Its influence on the electric field, the potential and the capacitance of the junctions is determined and discussed.
Band structure of silicon by pseudo-OPW. A. K. HOCHBERG and C. R. WESTGATE,.7. Phys. Chem. Solids 31 (1970), p. 2317. A modification of the procedure for calculating electronic energy band structures by the Orthogonalized Plane Wave method has been applied to silicon. An analytic set of core and valence electron wave functions for an sp 3 configuration of silicon has
AND
RELIABILITY
been obtained self-consistently and yields atomic scattering factors in close agreement with experimental values. This result is then used to improve the valence electron contribution to the potential used in the OPW calculations. This contracts with the use of adjustments to experimental transition energies used in recent perturbed OPW calculations. The band structure determination has produced transition energies, effective mass parameters, and deformation potentials in good agreement with experimental values and with perturbed OPW calculations.
Solving problems in m e t a l - o x i d e - s e m i c o n d u c t o r s . R. J. STRAIN,Bell Laboratories Record, October (1970), p. 273. Physical investigation and theoretical studies are teaching scientists what causes the action on the surfaces of semiconductors and what insulators best control that action. Such study promises better transistors, camera tubes, diodes and other communication devices.
Transient responses of a pulsed MIS-capacitor. J. MULLER and B. SCmEK, Solid-State Electron. 13 (1970), p. 1319. Different transient responses occur at an MIS-capacitor, when a rectangular pulse voltage is applied. Depending on the d.c.-bias at the capacitor and the amplitude and polarity of the pulse voltage the transient response varies between 10 nsec and 1 sec. These transient responses are described theoretically and are compared to experimental data. A method for the direct measurement of the minority carrier lifetime is given. It is shown that the surface states dominate the re-combination process, if the MIS-capacitor is pulsed from the inversion region into the accumulation region. This fact is used to determine the total number of surface states in the forbidden band and to explain the large a.c.-signal behaviour. In addition a simple and accurate method of measuring the breakdown voltage in the semiconductor is presented.
Phonon-induced hopping transitions in g e r m a n i u m and silicon. A. MYSZKOWSKI,.7. Phys. Chem. Solids. 31 (1970), p. 2453. The probability of the phononinduced electron transitions is basic for the theories of the hopping phenomena in Ge and Si at very low temperatures. Myszkowski and Rogala obtained the probability of the two-donor transitions using the adiabatic approximation and the approximation of the weak electron-lattice interaction. Both donor centers were assumed to be on substitutional sites in the same sublattice of the diamond-type crystal. Here the theoDr is extended to the case of the donor centers on arbitrary substitutional sites and, also, the previous approximations are discussed. The transition probability is a rapidly-oscillating function of the donor positions. The performed average over small regions around each of the actual positions of the donor centers does not have the oscillating behaviour and will be convenient in practical applications, i.e. in the theories of the macroscopic phenomena, e.g. hopping conductivity.
WORLD
ABSTRACTS
ON MICROELECTRONICS
point to the serious possibility that some reported phenomena in semiconductor devices can be understood as edge-stress dependent processes.
Complex MOS circuit arrays. CARROLL R. PERKINS, Proc. 1970 20th Electronic Components Conf., Washington, 13-15 May (1970), p. 475. During the past several months, the trade journals have had numerous discussions concerning the Metal Oxide Semiconductor technology as applied to various complex device structures. In fact, the realm of complexity of these MOS arrays has achieved portions where the arrays are often discussed as entire subsystems. Several manufacturers claim complete desk calculators can be manufactured with as few as three complex MOS arrays. It is worthy to note that most of these discussions of MOS complex arrays have centered around high volume arrays envisioned for computer main frames and peripheral equipment. Whereas it is true that the densest arrays are the Read-Only-Memories, this author wishes to ignore the more published computer applications during this discussion and concentrate on applications concerning commercial counter circuits. The MOS technology lends itself to the repetitive structure associated with many counter applications. The following paper will discuss the application of this MOS technology to some typical commercial counter problems and a novel approach for generating digitally the horizontal and vertical synchronizing signals common to commercial television receivers. Valence-band
deformation
potentials
for
the
III-V c o m p o u n d s . J. D. WILEY, Solid State Commun. 8 (1970), p. 1865. It has recently been shown that the lattice mobility of holes in I I I - V compounds is limited primarily by acoustic and nonpolar optical mode scattering. The strength of these scattering mechanisms is determined by the coupling parameters E a c and ENPO. It is shown here that EAC and E x e o can be related to the fundamental valence-band deformation potentials a, b, d and do. Calculated values of EAC and ENp o are shown to be in good agreement with experimental values previously reported for Ge, Si, GaP, GaAs, InP, and A1Sb.
Inversion layers in abrupt p-n junctions. F. VAN DE WIELE and E. DEMOULIN, Solid-State Electron. 13 (1970), p. 717. The existence of an inversion layer near the metallurgical junction of abrupt asymmetrical p - n junctions is examined by means of a simple model, valid for reverse bias. Its influence on the electric field, the potential and the capacitance of the junctions is determined and discussed.
Band structure of silicon by pseudo-OPW. A. K. HOCHBERG and C. R. WESTGATE,.7. Phys. Chem. Solids 31 (1970), p. 2317. A modification of the procedure for calculating electronic energy band structures by the Orthogonalized Plane Wave method has been applied to silicon. An analytic set of core and valence electron wave functions for an sp 3 configuration of silicon has
AND
RELIABILITY
been obtained self-consistently and yields atomic scattering factors in close agreement with experimental values. This result is then used to improve the valence electron contribution to the potential used in the OPW calculations. This contracts with the use of adjustments to experimental transition energies used in recent perturbed OPW calculations. The band structure determination has produced transition energies, effective mass parameters, and deformation potentials in good agreement with experimental values and with perturbed OPW calculations.
Solving problems in m e t a l - o x i d e - s e m i c o n d u c t o r s . R. J. STRAIN,Bell Laboratories Record, October (1970), p. 273. Physical investigation and theoretical studies are teaching scientists what causes the action on the surfaces of semiconductors and what insulators best control that action. Such study promises better transistors, camera tubes, diodes and other communication devices.
Transient responses of a pulsed MIS-capacitor. J. MULLER and B. SCmEK, Solid-State Electron. 13 (1970), p. 1319. Different transient responses occur at an MIS-capacitor, when a rectangular pulse voltage is applied. Depending on the d.c.-bias at the capacitor and the amplitude and polarity of the pulse voltage the transient response varies between 10 nsec and 1 sec. These transient responses are described theoretically and are compared to experimental data. A method for the direct measurement of the minority carrier lifetime is given. It is shown that the surface states dominate the re-combination process, if the MIS-capacitor is pulsed from the inversion region into the accumulation region. This fact is used to determine the total number of surface states in the forbidden band and to explain the large a.c.-signal behaviour. In addition a simple and accurate method of measuring the breakdown voltage in the semiconductor is presented.
Phonon-induced hopping transitions in g e r m a n i u m and silicon. A. MYSZKOWSKI,.7. Phys. Chem. Solids. 31 (1970), p. 2453. The probability of the phononinduced electron transitions is basic for the theories of the hopping phenomena in Ge and Si at very low temperatures. Myszkowski and Rogala obtained the probability of the two-donor transitions using the adiabatic approximation and the approximation of the weak electron-lattice interaction. Both donor centers were assumed to be on substitutional sites in the same sublattice of the diamond-type crystal. Here the theoDr is extended to the case of the donor centers on arbitrary substitutional sites and, also, the previous approximations are discussed. The transition probability is a rapidly-oscillating function of the donor positions. The performed average over small regions around each of the actual positions of the donor centers does not have the oscillating behaviour and will be convenient in practical applications, i.e. in the theories of the macroscopic phenomena, e.g. hopping conductivity.