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Why MSI?
WORLD
ABSTRACTS
ON MICROELECTRONICS
MOS review. A PARKER, Microelectronics, June (1970), p. 19. MOS devices are now beginning to move into larger volume markets and applications. Many of the early problems concerned with yield and production have now been solved--albeit in a variety of different ways. The complexity of these ICs is reaching the so called LSI level and as a result, the cost per function is rapidly decreasing. This has resulted in a large potential demand from outside the normal "logic buyers" in such fields as toys, musical instruments or even motor cars. What this market now needs is "credibility" in both the devices, and surprisingly, the
AND
RELIABILITY
19
technologies behind the devices. No one can pretend that processing itself has reached the end of its development or that new processes are not just around the comer. This article is a review of the present state of the subject as seen through the eyes of the Microelectronics' staff.
Why MSI? H. HOWARD, EDN, 1 May (1970), p. 49. Entire circuit functions on a single chip open up new horizons to the designer. It's just another step in the continuing progress toward microminiaturization in electronics.
5. MICROELECTRONICS D E S I G N A N D C O N S T R U C T I O N Thermal design problems with high speed I C s - - I .
The C-V technique as an analytical tool. K. H.
R. J. HOUSMAN,Microelectronics, July (1970), p. 24. T h e role of the mechanical engineer in electronic equipment design has become increasingly important since the introduction of integrated circuits. One result of new circuit technology has been the increasing need for accurate thermal design and analysis. During the past few years this thermal management problem has been magnified by the development of ultra high-speed circuits which dissipate power at levels of an order of magnitude higher than the first integrated circuits. This discussion deals with some of the factors which contribute to the temperature problem and approaches that may be taken to accomplish a reliable design. No attempt is made to survey the field of general thermal design techniques, emphasis being place on high-speed circuits. In part one of a two part article, a brief discussion of power-speed product, interconnections, reliability and thermal gradients is presented, followed by a presentation of thermal design considerations from circuit chip to the ultimate heat sink. In part two, a case history, describing the packaging approach selected for a nanosecond M S I computer, will illustrate one method of solving the "high speed/highpower" packaging problem.
ZAININCER and F. P. FIEIMAN, Solid St. Technol., May (1970), p. 49. Silicon-based discrete devices, and especially integrated circuits, play an essential and ever increasing role in the electronic industry. This is especially true of MOS circuits. However, despite the sophistication achieved in technology, relatively crude methods of measurement during processing are still employed. Because of the simplicity of the test structure, the ease of making the measurement, and the large amount of information obtainable, C - V measurements can be of use. Indeed, since this method is nondestructive, accurate and fast (it can be carried out semiautomatically) it can be employed at many steps in the fabrication procedure and conveniently serve for process control. In this report a brief review is given of the physics of M I S structures and the C - V technique, by which many properties of the insulating layer, semiconducting layer, and their interfaces can be determined. In addition, many useful graphs which facilitate the rapid determination of these properties from C - V measurements are compiled.
Complementary transistors in integrated circuits.
p. 36. This article describes how the various "coms ponents" may be manipulated to achieve circuit design, optimized to the silicon-planar process. An example of a design exercise is described in detail, illustrating the way in which functions conventionally realized by means of a small number of passive components can be replaced by digital active circuits, achieving greater economy when designing SICs.
R. G. DONALD,Solid-St. Electron. 13 (1970), p. 815. Junction isolated P N P and N P N double diffused transistors structurally and electrically similar have been made simultaneously in a monolithic integrated circuit structure by a method which does not compromise the required properties of N P N transistors and derived devices. Collector islands, with the correct doping profiles for N P N and N P N transistors are formed, in one step, by the redistribution of boron from buried layers placed between two N type epitaxial layers. The base and emitter regions for both transistors are then formed by a sequence of steps which permits adjustment of the P N P transistor properties while retaining the N P N process steps unchanged. T h e method is described in detail and the electrical characteristics presented of a P N P - N P N pair forming part of a monolithic integrated circuit.
c u s t o m e r - d e s l g n - - P a r t 4, "Practice from theory". P. J. FORaEST, Microelectronics, April (1970)IC
Interfacing circuitry for use with MIC7400 series T T L . Electron. Compon., April (1970), p. 433. In most practical applications a logic system is used with external equipment. Frequently the signals produced or required by such equipment are not directly compatible with the voltage levels used within the logic system. This article describes methods by which compatible interface circuits between MIC7400 T T L and external circuits may be designed.
ABSTRACTS
ON MICROELECTRONICS
MOS review. A PARKER, Microelectronics, June (1970), p. 19. MOS devices are now beginning to move into larger volume markets and applications. Many of the early problems concerned with yield and production have now been solved--albeit in a variety of different ways. The complexity of these ICs is reaching the so called LSI level and as a result, the cost per function is rapidly decreasing. This has resulted in a large potential demand from outside the normal "logic buyers" in such fields as toys, musical instruments or even motor cars. What this market now needs is "credibility" in both the devices, and surprisingly, the
AND
RELIABILITY
19
technologies behind the devices. No one can pretend that processing itself has reached the end of its development or that new processes are not just around the comer. This article is a review of the present state of the subject as seen through the eyes of the Microelectronics' staff.
Why MSI? H. HOWARD, EDN, 1 May (1970), p. 49. Entire circuit functions on a single chip open up new horizons to the designer. It's just another step in the continuing progress toward microminiaturization in electronics.
5. MICROELECTRONICS D E S I G N A N D C O N S T R U C T I O N Thermal design problems with high speed I C s - - I .
The C-V technique as an analytical tool. K. H.
R. J. HOUSMAN,Microelectronics, July (1970), p. 24. T h e role of the mechanical engineer in electronic equipment design has become increasingly important since the introduction of integrated circuits. One result of new circuit technology has been the increasing need for accurate thermal design and analysis. During the past few years this thermal management problem has been magnified by the development of ultra high-speed circuits which dissipate power at levels of an order of magnitude higher than the first integrated circuits. This discussion deals with some of the factors which contribute to the temperature problem and approaches that may be taken to accomplish a reliable design. No attempt is made to survey the field of general thermal design techniques, emphasis being place on high-speed circuits. In part one of a two part article, a brief discussion of power-speed product, interconnections, reliability and thermal gradients is presented, followed by a presentation of thermal design considerations from circuit chip to the ultimate heat sink. In part two, a case history, describing the packaging approach selected for a nanosecond M S I computer, will illustrate one method of solving the "high speed/highpower" packaging problem.
ZAININCER and F. P. FIEIMAN, Solid St. Technol., May (1970), p. 49. Silicon-based discrete devices, and especially integrated circuits, play an essential and ever increasing role in the electronic industry. This is especially true of MOS circuits. However, despite the sophistication achieved in technology, relatively crude methods of measurement during processing are still employed. Because of the simplicity of the test structure, the ease of making the measurement, and the large amount of information obtainable, C - V measurements can be of use. Indeed, since this method is nondestructive, accurate and fast (it can be carried out semiautomatically) it can be employed at many steps in the fabrication procedure and conveniently serve for process control. In this report a brief review is given of the physics of M I S structures and the C - V technique, by which many properties of the insulating layer, semiconducting layer, and their interfaces can be determined. In addition, many useful graphs which facilitate the rapid determination of these properties from C - V measurements are compiled.
Complementary transistors in integrated circuits.
p. 36. This article describes how the various "coms ponents" may be manipulated to achieve circuit design, optimized to the silicon-planar process. An example of a design exercise is described in detail, illustrating the way in which functions conventionally realized by means of a small number of passive components can be replaced by digital active circuits, achieving greater economy when designing SICs.
R. G. DONALD,Solid-St. Electron. 13 (1970), p. 815. Junction isolated P N P and N P N double diffused transistors structurally and electrically similar have been made simultaneously in a monolithic integrated circuit structure by a method which does not compromise the required properties of N P N transistors and derived devices. Collector islands, with the correct doping profiles for N P N and N P N transistors are formed, in one step, by the redistribution of boron from buried layers placed between two N type epitaxial layers. The base and emitter regions for both transistors are then formed by a sequence of steps which permits adjustment of the P N P transistor properties while retaining the N P N process steps unchanged. T h e method is described in detail and the electrical characteristics presented of a P N P - N P N pair forming part of a monolithic integrated circuit.
c u s t o m e r - d e s l g n - - P a r t 4, "Practice from theory". P. J. FORaEST, Microelectronics, April (1970)IC
Interfacing circuitry for use with MIC7400 series T T L . Electron. Compon., April (1970), p. 433. In most practical applications a logic system is used with external equipment. Frequently the signals produced or required by such equipment are not directly compatible with the voltage levels used within the logic system. This article describes methods by which compatible interface circuits between MIC7400 T T L and external circuits may be designed.