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Wide band gap semiconductor nanostructures for optoelectronic applications
ARTICLE IN PRESS Microelectronics Journal 40 (2009) 203
Contents lists available at ScienceDirect
Microelectronics Journal journal homepage: www.elsevier.com/locate/mejo
Preface
Wide band gap semiconductor nanostructures for optoelectronic applications This special issue of Microelectronics Journal contains invited and contributed papers which were presented at symposium G of the EMRS conference held in May 2008 in Strasbourg, France. The topic of this symposium was ‘‘Wide band gap semiconductor nanostructures for optoelectronic applications.’’ As intended by the organizers the presentations focussed on new III-nitride and ZnO-based nanostructures which already found or may find applications in optoelectronic devices in the near future. A majority of papers covered the self-organized growth and the characterization of nanorods which can be produced with high structural perfection. Strong photoluminescence and electroluminescence from assemblies of these nanostructures and even first demonstration of LED devices was reported. A key issue with III-nitride quantum structures is to avoid internal polarization fields, either by growth on hexagonal a- or mplane substrates or using the meta-stable, cubic configuration of the nitrides. Both strategies together with new micro-cavity-based nanostructures were addressed in a number of presentations during the symposium. Another highlight of the symposium was the observation of the strong coupling regime in a III-nitride microcavity at room temperature. Impressive progress was also made with III-nitride intersubband devices for 1.55 mm detection. These detectors reach cut-off-frequencies in the 100 GHz region and thus may allow extending the bit rate in information networks.
Symposium sponsors
0026-2692/$ - see front matter & 2008 Elsevier Ltd. All rights reserved. doi:10.1016/j.mejo.2008.07.009
The meeting introduced many new areas to the audience and raised a number of interesting discussions. In particular, We emphasise the issues of Quantum wires and quantum dots as the material basis for the fabrication of nanometer-scale devices. An extra quality of this meeting was that both senior and junior researchers could equally present their work. The format of the symposium and the number of participants encouraged a friendly and intimate atmosphere. The success of this conference was due to the effort and enthusiasm of the participants, the Organizing Committee and the International Advisory Committee. Special thanks go to all these people. Finally, on behalf of the Organising Committee, we would like to thank our sponsors for their financial support.
Guest Editors K. Lischka, A. Waag, H. Mariette, J. Neugebauer Department of Physics, University of Paderborn, 33098 Paderborn, Germany E-mail address: [email protected] (K. Lischka)
Contents lists available at ScienceDirect
Microelectronics Journal journal homepage: www.elsevier.com/locate/mejo
Preface
Wide band gap semiconductor nanostructures for optoelectronic applications This special issue of Microelectronics Journal contains invited and contributed papers which were presented at symposium G of the EMRS conference held in May 2008 in Strasbourg, France. The topic of this symposium was ‘‘Wide band gap semiconductor nanostructures for optoelectronic applications.’’ As intended by the organizers the presentations focussed on new III-nitride and ZnO-based nanostructures which already found or may find applications in optoelectronic devices in the near future. A majority of papers covered the self-organized growth and the characterization of nanorods which can be produced with high structural perfection. Strong photoluminescence and electroluminescence from assemblies of these nanostructures and even first demonstration of LED devices was reported. A key issue with III-nitride quantum structures is to avoid internal polarization fields, either by growth on hexagonal a- or mplane substrates or using the meta-stable, cubic configuration of the nitrides. Both strategies together with new micro-cavity-based nanostructures were addressed in a number of presentations during the symposium. Another highlight of the symposium was the observation of the strong coupling regime in a III-nitride microcavity at room temperature. Impressive progress was also made with III-nitride intersubband devices for 1.55 mm detection. These detectors reach cut-off-frequencies in the 100 GHz region and thus may allow extending the bit rate in information networks.
Symposium sponsors
0026-2692/$ - see front matter & 2008 Elsevier Ltd. All rights reserved. doi:10.1016/j.mejo.2008.07.009
The meeting introduced many new areas to the audience and raised a number of interesting discussions. In particular, We emphasise the issues of Quantum wires and quantum dots as the material basis for the fabrication of nanometer-scale devices. An extra quality of this meeting was that both senior and junior researchers could equally present their work. The format of the symposium and the number of participants encouraged a friendly and intimate atmosphere. The success of this conference was due to the effort and enthusiasm of the participants, the Organizing Committee and the International Advisory Committee. Special thanks go to all these people. Finally, on behalf of the Organising Committee, we would like to thank our sponsors for their financial support.
Guest Editors K. Lischka, A. Waag, H. Mariette, J. Neugebauer Department of Physics, University of Paderborn, 33098 Paderborn, Germany E-mail address: [email protected] (K. Lischka)