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Advanced silicon and semiconducting silicon alloy-based materials and devices
Pergamoa
Materials Research Bulletin, Vol. 31, No. 4, pp. 423-427, 1996 Copyright 0 1996 Elsevier Science Ltd Printed in the USA. All rights reserved 00255408/96 $15.00 + .OO
PI1 SOO25-5408(96)00011-6
BOOK REVIEWS
ADVANCED SILICON AND SEMICONDUCTING SILICON ALLOY-BASED MATERIALS AND DEVICES, edited by J.FA Nijs. Institute of Physics Publishing, Bristol, UK, 1994,320 pages, hardcover US$190 (E95.00), ISBN o-7503-0299-2. The role of semiconductor silicon in the progress of human civilization is comparable with the role of any other major material. Present-day solid state electronics, although using a great variety of advanced materials, is not possible without silicon. The potential of this material, however, is not limited to its present uses. There are, in general, two different routes for further development of silicon as a material: (1) to improve the performance of already known applications, and (2) to find new applications based on modified properties of the material. In the both cases, progress can only be achieved on the basis of new information on structure and properties of silicon. The reviewed book very successfully combines general information on silicon with detailed professional analysis of new achievements in silicon research in specific areas. The selected directions of research covered are those in which the authors are top-level experts. The problems discussed in this book are essential in the improvement of traditional applications of silicon but their main significance is in the development of new silicon-based devices. The book is divided into two parts. The first part deals with single crystalline silicon and silicon-based alloys and structures. In the second part, properties and applications of polycrystalline silicon are described. From multiple problems related to single crystalline silicon, the authors selected ones associated with heavy doping of silicon and formation of strained silicon based alloys. In relation to heavy doping and formation of strained structures, very detailed information on electrical properties and peculiarities of defects formation is given (Chapters 1 and 2). Physical mechanisms effecting electron behavior in heavily doped silicon are described. Different theories and models are considered. In the conclusion of this section, influence of effects of heavy doping (bandgap narrowing and bandtailing) on some silicon devices are analyzed. In describing defects in single crystalline silicon, the authors again emphasize features which are the most pronounced in specific types of materials, heavily doped silicon and in strained layers of silicon heterostructures.
423
424
BOOK REVIEWS
Vol. 3 1, No. 4
Chapters 3 and 4 are devoted to methods of materials preparation. Two techniques of special interest consider the type of materials: Molecular Beam Epitaxy (MBE) and some modifications of Chemical Vapor Deposition (CVD) which permit deposition at relatively low temperature of substrate required for formation of strained layers of silicon based alloys. The remainder of the first part deals with properties of strained SiGe layers, physical and technology problems of applications of these layers in some devices. Chapter 8, which concludes the first part, is devoted to silicon carbide, a subject of special interest to one of the authors. There are a number of reasons to include material on Sic in a book on silicon. Power electronics is an area already effecting the silicon market and will be even a stronger factor in the near future. For this application, as noted in Chapter 8, silicon carbide is one of the best materials. Silicon carbide is used in combination with silicon to construct heterostructures. Materials problems related to such heterojunctions are similar to the problems of strained SiGe structures. Information given in Chapter 8 covers all essential achievements in Sic preparation and applications. Polysilicon, a subject of the second part of this book, is a promising material for applications in different devices. In some cases, if the cost/performance ratio is considered, polycrystalline silicon can have significant advantages, as compared with expensive single crystalline material. Factors which lead to lowering of silicon performability due to presence of grain boundaries, as well as ways to reduce the effects, are considered. Consideration is given from the point of view of the use of polycrystalline silicon in particular devices (solar sells, thin film transistors) and in VLSI applications. In conclusion, I would like to congratulate the authors in writing such a good book. They have selected an essential subject and found a good way to describe related problems. It is clear that the conclusions given in the book are based on the authors own experience in the areas discussed. The book should be of interest to those wanting general information on silicon as well as to specialists in specific fields of investigation and application of semiconductors. Reviewed by Fedor A. Kunetsov, Institute of Inorganic Chemistry Russian Academy of Sciences, 3, Lavrentyev Ave., Novosibirsk, 630090, Russia
MOLECULAR CRYSTALS, 2nd edition, by J.D. Wright. Cambridge University Press, New York, 1995, 221 pages, hardcover $49.95, ISBN o-521-46510-9; paperback $22.95, ISBN O-52l-47730- 1. Since the publication of the first edition of this book in 1987, there has been growing interest in the study of molecular crystals and their applications in optics and electronics. This second edition describes chemical and physical structure of the molecular crystals, their optical and electronic properties, and reactions between neighboring molecules in crystals. The aim of the second edition is to take into account the research areas which have undergone rapid development. The book consists of ten chapters. The first chapter, entitled “Purification and crystal growth,” includes the description of physical and chemical methods of purification and different methods of crystal growth such as vapor, melt, and solution growth. The second chapter contains a description of Intermolecular forces. The dipole-dipole interactions, dipole-induced dipole interactions, dispersion forces, charge-transfer interactions, and repulsive forces are discussed.
Materials Research Bulletin, Vol. 31, No. 4, pp. 423-427, 1996 Copyright 0 1996 Elsevier Science Ltd Printed in the USA. All rights reserved 00255408/96 $15.00 + .OO
PI1 SOO25-5408(96)00011-6
BOOK REVIEWS
ADVANCED SILICON AND SEMICONDUCTING SILICON ALLOY-BASED MATERIALS AND DEVICES, edited by J.FA Nijs. Institute of Physics Publishing, Bristol, UK, 1994,320 pages, hardcover US$190 (E95.00), ISBN o-7503-0299-2. The role of semiconductor silicon in the progress of human civilization is comparable with the role of any other major material. Present-day solid state electronics, although using a great variety of advanced materials, is not possible without silicon. The potential of this material, however, is not limited to its present uses. There are, in general, two different routes for further development of silicon as a material: (1) to improve the performance of already known applications, and (2) to find new applications based on modified properties of the material. In the both cases, progress can only be achieved on the basis of new information on structure and properties of silicon. The reviewed book very successfully combines general information on silicon with detailed professional analysis of new achievements in silicon research in specific areas. The selected directions of research covered are those in which the authors are top-level experts. The problems discussed in this book are essential in the improvement of traditional applications of silicon but their main significance is in the development of new silicon-based devices. The book is divided into two parts. The first part deals with single crystalline silicon and silicon-based alloys and structures. In the second part, properties and applications of polycrystalline silicon are described. From multiple problems related to single crystalline silicon, the authors selected ones associated with heavy doping of silicon and formation of strained silicon based alloys. In relation to heavy doping and formation of strained structures, very detailed information on electrical properties and peculiarities of defects formation is given (Chapters 1 and 2). Physical mechanisms effecting electron behavior in heavily doped silicon are described. Different theories and models are considered. In the conclusion of this section, influence of effects of heavy doping (bandgap narrowing and bandtailing) on some silicon devices are analyzed. In describing defects in single crystalline silicon, the authors again emphasize features which are the most pronounced in specific types of materials, heavily doped silicon and in strained layers of silicon heterostructures.
423
424
BOOK REVIEWS
Vol. 3 1, No. 4
Chapters 3 and 4 are devoted to methods of materials preparation. Two techniques of special interest consider the type of materials: Molecular Beam Epitaxy (MBE) and some modifications of Chemical Vapor Deposition (CVD) which permit deposition at relatively low temperature of substrate required for formation of strained layers of silicon based alloys. The remainder of the first part deals with properties of strained SiGe layers, physical and technology problems of applications of these layers in some devices. Chapter 8, which concludes the first part, is devoted to silicon carbide, a subject of special interest to one of the authors. There are a number of reasons to include material on Sic in a book on silicon. Power electronics is an area already effecting the silicon market and will be even a stronger factor in the near future. For this application, as noted in Chapter 8, silicon carbide is one of the best materials. Silicon carbide is used in combination with silicon to construct heterostructures. Materials problems related to such heterojunctions are similar to the problems of strained SiGe structures. Information given in Chapter 8 covers all essential achievements in Sic preparation and applications. Polysilicon, a subject of the second part of this book, is a promising material for applications in different devices. In some cases, if the cost/performance ratio is considered, polycrystalline silicon can have significant advantages, as compared with expensive single crystalline material. Factors which lead to lowering of silicon performability due to presence of grain boundaries, as well as ways to reduce the effects, are considered. Consideration is given from the point of view of the use of polycrystalline silicon in particular devices (solar sells, thin film transistors) and in VLSI applications. In conclusion, I would like to congratulate the authors in writing such a good book. They have selected an essential subject and found a good way to describe related problems. It is clear that the conclusions given in the book are based on the authors own experience in the areas discussed. The book should be of interest to those wanting general information on silicon as well as to specialists in specific fields of investigation and application of semiconductors. Reviewed by Fedor A. Kunetsov, Institute of Inorganic Chemistry Russian Academy of Sciences, 3, Lavrentyev Ave., Novosibirsk, 630090, Russia
MOLECULAR CRYSTALS, 2nd edition, by J.D. Wright. Cambridge University Press, New York, 1995, 221 pages, hardcover $49.95, ISBN o-521-46510-9; paperback $22.95, ISBN O-52l-47730- 1. Since the publication of the first edition of this book in 1987, there has been growing interest in the study of molecular crystals and their applications in optics and electronics. This second edition describes chemical and physical structure of the molecular crystals, their optical and electronic properties, and reactions between neighboring molecules in crystals. The aim of the second edition is to take into account the research areas which have undergone rapid development. The book consists of ten chapters. The first chapter, entitled “Purification and crystal growth,” includes the description of physical and chemical methods of purification and different methods of crystal growth such as vapor, melt, and solution growth. The second chapter contains a description of Intermolecular forces. The dipole-dipole interactions, dipole-induced dipole interactions, dispersion forces, charge-transfer interactions, and repulsive forces are discussed.