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Frequency characteristics of thin film plane resistor
230
WORLD A B S T R A C T S ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
Electrical characterization of radio-frequency sputtering gas discharge. J. S. LOGAN et al., J. l/-ac. Sci. Technol. 6 (1), Jam-Feb. (1969), p. 120. In the design of r.f. sputtering systems, the electrical equivalent of the gas discharge must be known. For this purpose, an experiment was conducted in which the electrical impedance (capacitance and conductance) of an r.f. sputtering gas discharge was determined as a function of pressure, magnetic field strength and r.f. power input. The method of measurement involved the use of matching network, an incident and reflected power meter, and a Boonton radiofrequency admittance meter. Values of conductance and capacitance for the discharge were deduced from measurements on the matching network after termination of the discharge. Results show that both capacitance and conductance increase strongly with increasing magnetic field. Capacitance changed from 0.97 × 10-13 F/cm 2 to 2.5 X 10-~3 F/cm ~ between zero and 156 G. Conductance changed from 1.6 X 10-6 mho/cm 2 to 3.9 X 10-6 mho/cm 2 in the same interval. Pressure dependence was strongest at zero magnetic field, changing both capacitance and conductance approximately 30 per cent between 7.5 and 30 mtorr (argon). At high magnetic field, there was very little effect. No appreciable change was observed between 1.1 and 6.5 W/cm 2 power application. Design equations are given for a simple matching network, and a design example is presented to demonstrate application. Substrate bombardment during RF sputtering. I. BRODIEet al., J. Fac. Sci. Technol. 6 (1,) Jan.-Feb. (1969), p. 124. For the conditions relevant to the "peak" type of r.f. sputtering arrangement and most r.f. sputtering devices, it is shown that ions are essentially unaware of the existence of the r.f. fields and respond only to the d.c. fields generated. This enables the sputtering parameters to be viewed in a simple, physical way and calculations based on this approach are shown to be fairly exact. A deduction from the theory is that the majority of the secondary electrons, released by ion bombardment of the target plates, strike the substrate table with considerable energy. A special gridded probe in the substrate table enabled the simple theory to be verified quantiatively and also verified the existence of the highenergy electrons. By controlling substrate bombardment during sputtering with another grid arrangement, the effects of this high-energy electron bombardment on film adherence and appearance was demonstrated.
Frequency characteristics o f t h l n film plane resistor. S. NOGUCHI,T. TAMAKIand T. NUNOKAMI. Trans. Inst. Electron. Commun. Engrs Japan 52, No. 2, February (1969), p. 20. The frequency characteristics of the thin film plane resistor of which the shape is in common use and which consists of the zigzag pattern has been studied. It is important to understand the high frequency characteristics of the thin film plane resistor in the circuit design with the progress of IC application to the linear circuit.
Stability of thick film resistors. E. THIEL, Radio Mentor Electron. 35, No. 5, May (1969), p. 326. (In German.) We reported previously on the load capacity of thick film resistors and thus decisive influence of the temperature on their stability. Here the effects of various types of load on thick film resistors are discussed in order to give the user ideas of limits in operation of the thick film as a resistance element. The results of the investigations show that thick film resistors are in some respect superior to commercially available resistors at given load ratings. One of the advantages of thick film circuits, namely the great possibilities of variation due to diffrent substrate and resistance forms, however, makes basic experiments considerably more difficult due to their versatility. Nevertheless, so many results are already available that ever very special technical requirements can be met.
Progress in m a k i n g thin a n d thick-film circuits. C. H. HOCKADAY,Electron. Engng, May (1969), p. 57. Film circuits are now made by various processes such as chemical or electroless deposition, vacuum deposition, "screen and fire" techniques, vapour plating and direct writing. The last two processes are still being evaluated for circuit production, but vapour plating is already used for plastic coating. Variations within each basic process occur and will be considered later. In this article circuits will be considered "thin film" if made by vacuum deposition methods, even if eventually the conductor layer is plated up for bonding or microwave purposes. Thick-film circuits are made by screening suitable pastes through a stencil and then firing in a furnace. The thickness of the deposit varies from about 0"0005 to 0.0015 in. depending on material. Using chemical methods, films as thick as "thick" film or as thin as vapour deposited films can be made. This method is, therefore, treated separately.
WORLD A B S T R A C T S ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
Electrical characterization of radio-frequency sputtering gas discharge. J. S. LOGAN et al., J. l/-ac. Sci. Technol. 6 (1), Jam-Feb. (1969), p. 120. In the design of r.f. sputtering systems, the electrical equivalent of the gas discharge must be known. For this purpose, an experiment was conducted in which the electrical impedance (capacitance and conductance) of an r.f. sputtering gas discharge was determined as a function of pressure, magnetic field strength and r.f. power input. The method of measurement involved the use of matching network, an incident and reflected power meter, and a Boonton radiofrequency admittance meter. Values of conductance and capacitance for the discharge were deduced from measurements on the matching network after termination of the discharge. Results show that both capacitance and conductance increase strongly with increasing magnetic field. Capacitance changed from 0.97 × 10-13 F/cm 2 to 2.5 X 10-~3 F/cm ~ between zero and 156 G. Conductance changed from 1.6 X 10-6 mho/cm 2 to 3.9 X 10-6 mho/cm 2 in the same interval. Pressure dependence was strongest at zero magnetic field, changing both capacitance and conductance approximately 30 per cent between 7.5 and 30 mtorr (argon). At high magnetic field, there was very little effect. No appreciable change was observed between 1.1 and 6.5 W/cm 2 power application. Design equations are given for a simple matching network, and a design example is presented to demonstrate application. Substrate bombardment during RF sputtering. I. BRODIEet al., J. Fac. Sci. Technol. 6 (1,) Jan.-Feb. (1969), p. 124. For the conditions relevant to the "peak" type of r.f. sputtering arrangement and most r.f. sputtering devices, it is shown that ions are essentially unaware of the existence of the r.f. fields and respond only to the d.c. fields generated. This enables the sputtering parameters to be viewed in a simple, physical way and calculations based on this approach are shown to be fairly exact. A deduction from the theory is that the majority of the secondary electrons, released by ion bombardment of the target plates, strike the substrate table with considerable energy. A special gridded probe in the substrate table enabled the simple theory to be verified quantiatively and also verified the existence of the highenergy electrons. By controlling substrate bombardment during sputtering with another grid arrangement, the effects of this high-energy electron bombardment on film adherence and appearance was demonstrated.
Frequency characteristics o f t h l n film plane resistor. S. NOGUCHI,T. TAMAKIand T. NUNOKAMI. Trans. Inst. Electron. Commun. Engrs Japan 52, No. 2, February (1969), p. 20. The frequency characteristics of the thin film plane resistor of which the shape is in common use and which consists of the zigzag pattern has been studied. It is important to understand the high frequency characteristics of the thin film plane resistor in the circuit design with the progress of IC application to the linear circuit.
Stability of thick film resistors. E. THIEL, Radio Mentor Electron. 35, No. 5, May (1969), p. 326. (In German.) We reported previously on the load capacity of thick film resistors and thus decisive influence of the temperature on their stability. Here the effects of various types of load on thick film resistors are discussed in order to give the user ideas of limits in operation of the thick film as a resistance element. The results of the investigations show that thick film resistors are in some respect superior to commercially available resistors at given load ratings. One of the advantages of thick film circuits, namely the great possibilities of variation due to diffrent substrate and resistance forms, however, makes basic experiments considerably more difficult due to their versatility. Nevertheless, so many results are already available that ever very special technical requirements can be met.
Progress in m a k i n g thin a n d thick-film circuits. C. H. HOCKADAY,Electron. Engng, May (1969), p. 57. Film circuits are now made by various processes such as chemical or electroless deposition, vacuum deposition, "screen and fire" techniques, vapour plating and direct writing. The last two processes are still being evaluated for circuit production, but vapour plating is already used for plastic coating. Variations within each basic process occur and will be considered later. In this article circuits will be considered "thin film" if made by vacuum deposition methods, even if eventually the conductor layer is plated up for bonding or microwave purposes. Thick-film circuits are made by screening suitable pastes through a stencil and then firing in a furnace. The thickness of the deposit varies from about 0"0005 to 0.0015 in. depending on material. Using chemical methods, films as thick as "thick" film or as thin as vapour deposited films can be made. This method is, therefore, treated separately.