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Reliability of Ku-BAND GaAs power FETs under highly stressed RF operation
584
World Abstracts on Microelectronics and Reliability
current, fusing time, and fused length of gold and aluminum bond wires used in transistors and integrated circuits are analyzed in terms of physical properties and size of the wire by simplified heat equations. Results of this physical analysis provide a useful guide to compare and extrapolate existing data and suggest steps in estimating fusing current and duration from an observed fused length on bond wires with known diameter, length and material.
161) (1983). Dark defects related to degradation in GaAIAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects. dark regions and (100) dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.
often caused by an inadequate finishing process in semiconductor assembly, can render the best-made chips useless,
temperature, humidity and bias testing (T/H/B) in the highly accelerated stress test (HAST) has been reported. To further characterize and enhance this technique, humidity modeling at temperatures above 100°C and pressures in excess of one atmosphere hasbeen performed. Extending the psychrometric region of temperature/ humidity testingbeyondthe 100°C 1 ~ atmosphere pressure standard, presents a series of new concerns. To address these concerns, a three-phase study was conducted. Phase 1 of the study was designed to assess first order moisture effects: e.g., the role of relative humidity (R.H.) and vapor pressure in the HAST environment. To quantify the results obtained, humidity rate constants of an exponential failure rate model were determined in Phase 2. The final phase describes an application to a DRAM product qualification.
Rapid assessment of the humidity dependence of IC failure modes by use of HAST. JEFFRt"~ E. GUNN, ROBI!RT E. IC lead finishing: issues and options. PIETER S. BURGGRAAF. CAMIiNGAand SUSHIL K. MALIK. IEEE 21st Ann. Proe. Semiconductor Int. 64 (July 1983). Poor IC-lead solderability, Reliab. Phys. 66 (1983). The validity of thermally accelerating
Reliability and failure mechanisms of nonhermetic aluminum SIC's: literature review and bias humidity performance, MELANIE IANNUZZI. IEEE Trans. Components Hybrids Mlg Technol. CHMT-6 (2) 181 (June 1983). The aging of aluminum metallized silicon integrated circuit (SIC) test vehicles (bare, SiN CAPS only, room temperature vulcanizing (RTV) silicone rubber only, SiN CAPS + RTV) at 85°C, 85'!41 relative humidity (RH), for 12,597h was carried out with either +10V, - 1 0 V or 0Vdc bias imposed on the samples. No failures and no unusual leakage current behaviour were observed in humidity. Auger depth profiles of the passivating oxide indicate no change in oxide thickhess due to temperature and humidity alone. In a moist environment, anodization of the aluminum takes place. An estimate of the median life under worst case use conditions was calculated to be better than 1.6 x l0 t' h. This was obtained by asuming the same value of sigma and the same acceleration factors as those obtained from N-type metal oxide semiconductor (NMOS) failure rate data applied to an Eyring Model. The results show that the failure rate for aluminum metallization under worst case use conditions is less than 1 FIT (failure in 109 device hours) after 40 years. A literature survey of aluminum corrosion is also included.
Reliability evaluation of Piessey low noise gallium arsenide field effect transistors. G. M. BRYDON and B. G. CAPLEN. IEEE 21st Ann. Proe. Reliab. Phys. 302 (1983). An evaluation
programme carried out on the Plessey Low Noise Gallium Arsenide Field Effect Transistors GAT 5 and GAT 6 is described. The programme conformed to the European Space Agency (ESA) requirements defined in QRC50G, Guidelines for the Selection, Evaluation, Screening and Lot Acceptance of Non-Standard Electronic, Electric and Electromechanical Parts. The purpose of the evaluation programme was to establish the reliability of the devices and Reliability of aluminum-gate metallization in GaAs power qualify them for use in space applications. FETs. W. J. SLUSARK,JR., G. L. SCHNABLE,V. R. MONSHAW Results obtained for the various tests are given together and M. FUKUTA. IEEE 21st Ann. Proe. Reliab. Phys. 211 with an analysis of the data and failure analysis performed (1983). We report a failure mechanism in aluminum-gate on device failures. GaAs power FETs. (Fujitsu FLC-30 MAJ caused by a An MTTF of 3 × 107hr was obtained for the GAT 5 deficient step metallization. Transistors analyzed during the manufactured with aluminium gate metallisation and gold course of a solid-state power amplifier manufacturing prowire bonding. An MTTF of I x 108 hr was obtained for the gram revealed gate electromigration as a probable cause of GAT 6 which used titanium/aluminium gate metaltisation discrepant performance. A deficiency in metallization step and aluminium wire bonding to the gate pads. coverage at the gate source crossover of these transistors, in conjunction with microcracks which were observed at the Reliability of Ku-BAND GaAs power FETs under highly crossover, resulted in a redirection of gate current. This stressed RF operation. P. M. WHITE, C. G. ROGERS and B. S. increased current flow in the gate finger stripe led to early HEWIT3".IEEE 21st Ann. Proe. Reliab. Phys. 297 (1983). gate electromigration failures. Transistors which underwent Accelerated life tests under rf drive have been performed on a 200-hour, 175°C burn-in as part of the screening process power EETs with sub-micron aluminum gates and plated were seen to exhibit this effect, via-hole source connections designed for operation up to Ku-band. The tests were performed on a nine channel XThe effect of entrapped Krypton 85 gas on device reliability, band test station under typical operating bias of I'~,~= 10 V. DAVID FISCH, TOM MOZDZEN and GEROW ROBERTS. IEEE The rf level was set to drive the devices well into gain 21st Ann. Proc. Reliab. Phys. 102 (1983). The effect of encompression with 1 mA net DC gate current. Two failure trapped Kr 85 radioactive gas upon the threshold voltage and modes were observed depending on channel temperature. At junction leakage of MOS transistors is quantified through 228°C a gradual reduction in gain was observed, accomdevice modeling and accelerated testing. The interactions of panied by a slow drop in ld~. MTTF according to a failure transistor channel length, channel width, oxide thickness, criterion of l dB gain degradation was 2100hr. No gate radiation level and exposure time are experimentally deterdegradation was observed even after 3300 hr on test. The mined. A mathematical model is developed which predicts only observable effects were drain migration and a slightly threshold voltage shifts as a function of these processing reduced Io~. At 280°C the failure mode was catastrophic variables a n d t h e a m o u n t o f e n t r a p p e d K r 85 gas. Thismodel with an MTTF of 120 hr indicating that such high is used to establish, from a reliability standpoint, acceptable temperatures do not realistically accelerate the normal levels of entrapped Kr 8~ for current and new generation operating failure mode. Preliminary results are presented for devices, a third long-term test at 218°C.
A new failure mechanism related to the formation of dark Electromigration-induced extrusions in multi-level teehdefects in GaAIAs visible lasers. S. TODOROK1,T. TAKAHASHI, nologies. J. R. LLOYD. IEEE 21st Amt. Proc. Reliab. Phys. 208 K. AIKl and H. UCHIDA. IEEE 2lst Ann. Proc. Reliah. Phys. I1983i. It has been fimnd that wearout failure in multilevel
World Abstracts on Microelectronics and Reliability
current, fusing time, and fused length of gold and aluminum bond wires used in transistors and integrated circuits are analyzed in terms of physical properties and size of the wire by simplified heat equations. Results of this physical analysis provide a useful guide to compare and extrapolate existing data and suggest steps in estimating fusing current and duration from an observed fused length on bond wires with known diameter, length and material.
161) (1983). Dark defects related to degradation in GaAIAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects. dark regions and (100) dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.
often caused by an inadequate finishing process in semiconductor assembly, can render the best-made chips useless,
temperature, humidity and bias testing (T/H/B) in the highly accelerated stress test (HAST) has been reported. To further characterize and enhance this technique, humidity modeling at temperatures above 100°C and pressures in excess of one atmosphere hasbeen performed. Extending the psychrometric region of temperature/ humidity testingbeyondthe 100°C 1 ~ atmosphere pressure standard, presents a series of new concerns. To address these concerns, a three-phase study was conducted. Phase 1 of the study was designed to assess first order moisture effects: e.g., the role of relative humidity (R.H.) and vapor pressure in the HAST environment. To quantify the results obtained, humidity rate constants of an exponential failure rate model were determined in Phase 2. The final phase describes an application to a DRAM product qualification.
Rapid assessment of the humidity dependence of IC failure modes by use of HAST. JEFFRt"~ E. GUNN, ROBI!RT E. IC lead finishing: issues and options. PIETER S. BURGGRAAF. CAMIiNGAand SUSHIL K. MALIK. IEEE 21st Ann. Proe. Semiconductor Int. 64 (July 1983). Poor IC-lead solderability, Reliab. Phys. 66 (1983). The validity of thermally accelerating
Reliability and failure mechanisms of nonhermetic aluminum SIC's: literature review and bias humidity performance, MELANIE IANNUZZI. IEEE Trans. Components Hybrids Mlg Technol. CHMT-6 (2) 181 (June 1983). The aging of aluminum metallized silicon integrated circuit (SIC) test vehicles (bare, SiN CAPS only, room temperature vulcanizing (RTV) silicone rubber only, SiN CAPS + RTV) at 85°C, 85'!41 relative humidity (RH), for 12,597h was carried out with either +10V, - 1 0 V or 0Vdc bias imposed on the samples. No failures and no unusual leakage current behaviour were observed in humidity. Auger depth profiles of the passivating oxide indicate no change in oxide thickhess due to temperature and humidity alone. In a moist environment, anodization of the aluminum takes place. An estimate of the median life under worst case use conditions was calculated to be better than 1.6 x l0 t' h. This was obtained by asuming the same value of sigma and the same acceleration factors as those obtained from N-type metal oxide semiconductor (NMOS) failure rate data applied to an Eyring Model. The results show that the failure rate for aluminum metallization under worst case use conditions is less than 1 FIT (failure in 109 device hours) after 40 years. A literature survey of aluminum corrosion is also included.
Reliability evaluation of Piessey low noise gallium arsenide field effect transistors. G. M. BRYDON and B. G. CAPLEN. IEEE 21st Ann. Proe. Reliab. Phys. 302 (1983). An evaluation
programme carried out on the Plessey Low Noise Gallium Arsenide Field Effect Transistors GAT 5 and GAT 6 is described. The programme conformed to the European Space Agency (ESA) requirements defined in QRC50G, Guidelines for the Selection, Evaluation, Screening and Lot Acceptance of Non-Standard Electronic, Electric and Electromechanical Parts. The purpose of the evaluation programme was to establish the reliability of the devices and Reliability of aluminum-gate metallization in GaAs power qualify them for use in space applications. FETs. W. J. SLUSARK,JR., G. L. SCHNABLE,V. R. MONSHAW Results obtained for the various tests are given together and M. FUKUTA. IEEE 21st Ann. Proe. Reliab. Phys. 211 with an analysis of the data and failure analysis performed (1983). We report a failure mechanism in aluminum-gate on device failures. GaAs power FETs. (Fujitsu FLC-30 MAJ caused by a An MTTF of 3 × 107hr was obtained for the GAT 5 deficient step metallization. Transistors analyzed during the manufactured with aluminium gate metallisation and gold course of a solid-state power amplifier manufacturing prowire bonding. An MTTF of I x 108 hr was obtained for the gram revealed gate electromigration as a probable cause of GAT 6 which used titanium/aluminium gate metaltisation discrepant performance. A deficiency in metallization step and aluminium wire bonding to the gate pads. coverage at the gate source crossover of these transistors, in conjunction with microcracks which were observed at the Reliability of Ku-BAND GaAs power FETs under highly crossover, resulted in a redirection of gate current. This stressed RF operation. P. M. WHITE, C. G. ROGERS and B. S. increased current flow in the gate finger stripe led to early HEWIT3".IEEE 21st Ann. Proe. Reliab. Phys. 297 (1983). gate electromigration failures. Transistors which underwent Accelerated life tests under rf drive have been performed on a 200-hour, 175°C burn-in as part of the screening process power EETs with sub-micron aluminum gates and plated were seen to exhibit this effect, via-hole source connections designed for operation up to Ku-band. The tests were performed on a nine channel XThe effect of entrapped Krypton 85 gas on device reliability, band test station under typical operating bias of I'~,~= 10 V. DAVID FISCH, TOM MOZDZEN and GEROW ROBERTS. IEEE The rf level was set to drive the devices well into gain 21st Ann. Proc. Reliab. Phys. 102 (1983). The effect of encompression with 1 mA net DC gate current. Two failure trapped Kr 85 radioactive gas upon the threshold voltage and modes were observed depending on channel temperature. At junction leakage of MOS transistors is quantified through 228°C a gradual reduction in gain was observed, accomdevice modeling and accelerated testing. The interactions of panied by a slow drop in ld~. MTTF according to a failure transistor channel length, channel width, oxide thickness, criterion of l dB gain degradation was 2100hr. No gate radiation level and exposure time are experimentally deterdegradation was observed even after 3300 hr on test. The mined. A mathematical model is developed which predicts only observable effects were drain migration and a slightly threshold voltage shifts as a function of these processing reduced Io~. At 280°C the failure mode was catastrophic variables a n d t h e a m o u n t o f e n t r a p p e d K r 85 gas. Thismodel with an MTTF of 120 hr indicating that such high is used to establish, from a reliability standpoint, acceptable temperatures do not realistically accelerate the normal levels of entrapped Kr 8~ for current and new generation operating failure mode. Preliminary results are presented for devices, a third long-term test at 218°C.
A new failure mechanism related to the formation of dark Electromigration-induced extrusions in multi-level teehdefects in GaAIAs visible lasers. S. TODOROK1,T. TAKAHASHI, nologies. J. R. LLOYD. IEEE 21st Amt. Proc. Reliab. Phys. 208 K. AIKl and H. UCHIDA. IEEE 2lst Ann. Proc. Reliah. Phys. I1983i. It has been fimnd that wearout failure in multilevel