Single crystal films of semiconductor compounds by cathodic sputtering

166

Class(fled A b s t r a c t s 4 2 0 - - 4 3 4

Vacuum Applications 30.

Evaporation

and Sputtering

30 2q T h e performance of a small rotating subs(rate holder for vacuum deposition. See ~ b s t r N o 418 30 26 29 Use of a recording automatic mJcrobalauee m the vacuum e~aporaIron of permalloy and m d m m a n t m l o m d e thin films. See .~b.-,tr N o 419 30 19 Infrared heater for substrates of ~acuum deposaed films. See A b s t r N o 391

30 41 3~ 425. Electron m,croscope m e a s u r e m e n t s on evaporated, b a r m m titanate films. ( Ge~ lll~llll ) ~A L~e~k \'atut,~t,~en~haften, 50 t l ' l 1963 566 30 41 426. Preparation and properties of vacuum deposited g e r m a n i u m thin films. ~Japant S a k a l a n d K Takahash~ Jap J 4pp P h ~ . 2 ( l O ) O,.t 1963 629-6"~6

30 16 The %orptmn of noble posture runs of m e d m m energies at metalhc surfaces See-Xb~tr N o 371

30 41 427. Single cr~stal g e r m a n i u m films h3 m~crozone melting ( Gt eat Bt tIOlH) .I b.la.,erj,an, ~olnl 5rote Elc~t~ont~, 6 15), bept Oct 1'/63 4 7 " 4S4

30 29 16 S o m e applicatmns of a torsmn nucrobalancc for the m~estJgatmn of surface phenomena and thin film propert,es m ultra-h~gh vacuum. See ~b~tr N o 361

~0 16 428 An attempt to develop a t h e o o for the f o r m a h o n of thin fihns. IF~ame) M B o u r g J Pht~ 24121 Feb 1963. 162-164

30 420 ~n a u t o m a t , c experimental vacuum deposmon b3%tem. ( G~eat Bttlatn) A d e p o . , m o n %~.;tem J~ d ~ c u , ~ c d ~ htch incorporate,, a m e c h a n i s m capable of c b c h n g man3 ,,ubsHdtC~ throtlgh ft d e p o . , m o n proce.,~ ullder controlled ,.ondmon,, The n]echan~sm incorporated a Iocahzed a n d c o n t m u o u s l } operable c o n ~ t a n t - c o m p o ~ m o n allo~ e'.aporat~on %ource con~,,tlng o[ a refractor~, block v, h l d h I% heated by electron b o m b a r d m e n t a n d to wh,ch (~ led a ~,re ol krlo~n compo~n~on -Xnother lear((re o( the .,3~tem ~ prox~ded b~ a m a g n e t capable o f p r o d u c i n g a u n i f o r m reid ol Mgh mten..,~t~ Iocahzed o~er the reg,on occup(ed b~ the ,,ub~trate., a n d u~,ed d u r i n g the depo~,t,on o f m a g n e t i c film element., The d e p o . q t , m e q u , p m e n t ~a,. m.,talled m an oJl-d,flu,Jon p u m p e d h q m d m t r o g e n trapped ~ s t e m h a x m g an o p e r a t i n g pre,,~ure m the 10 ~ to 10-" range The unlformit~ of the ~,tpoul c o m p t ~ l t l o n ~a~ checked b~ u%mg a rotattllg ~ub~trate holder a n d depositing film~ a~eragJng I 0 0 ~ in t h ( c k n e ~ con%ceut(ve[~ I(1 the ca~e o f an Jron-mcke[ v,~re the percentage ol mckel m tile depo-,tt (a-, determined b,, X-ra~ fluorescence techmque~l did not ~a~3 b~ m o r e than 0 1 per cent ~/_ ~" I I

~0 26 429. Coating Ih,ckness m e a s u r e m e n t by electron prote microanalysis. G H Cockett and (- D Da~l., Bitt J 4pp/ P h i , 14~IID Nox 196"I ,",1 "~-S16

D ~ T a n d e s k l et a l , I ~lctttll~t, 14 ( 1 ) Jan 1964 3-6 30 33 421. M e a s u r e m e n t h.~ m e a n s of ~ J d m a n s t a t t e n pattern of the thickness of a thin metalhc film for e x a m m a t t o n in the electron microscope. (France) N Takaha~h~ C R 4ca,I S~t IFrance) 257 (6). 29 Jul3 1963. 1029-1032 30 26 422. A method for the continuous m e a s u r e m e n t of th,ckncss and deposition rate of conducting films during a vacuum e~aporation. ( Gt eat Brtlaln) J A T u r n e r e t a l . J S~t h t , t t u m , 4 0 ( 1 2 ) . D e c 1963 55"7,-561 30 423. Single crystal films of semiconductor compounds by cathodic sputtering. ( U S 4 ) M H F r a n c o m b e et al Elect(on Mu'rosc C o n ] . P h d a d e l p h t a 1962. I, Papers D D - 8 30 424. Modification of a ~ a c u u m m e t a l l i z i n g unit. ( U S 4 ) P L F a u s t a n d C W L a ~ l e s s Re~ Set I n , / r u m , 34 110) Oct 196:~, 1151

~0 26 430. M e a s u r e m e n t of e~aporated film thickness and e o n c e n t r a t m n b.~ electron prote X-ra.~ m~croanal)ser. IJopan) T h . h l n o k a ~ a and ~ ~ a m a d a J P h i , So~ 18 (ql Atlg I~6~ 122~ ~0 26 431 Mechanical rate of deposition morn(or. IU A 4 ) P E ()berg Re~ S~t I m t l u m 34 19) Sept 1963 1055-105f, ~0 41 432. Product(on of thin fihus of rod(urn a n t l m o m d e by ~acuum etaporation. (L S"S R ) P S -Xgalarzade a n d S ~ Semdeto~ K~t_,tal/og~ah~a 8 121 M a r c h - ~ p r d 19¢-,~ 2'/b-300 30 42 433. Vacuum evaporated sdicon la3ers free from stacking faults. t Gi eat BI/taml G R Booker a n d B ~ Un~ala P h d 'thtt,, 8. Sept 1961; 15'/'7,159S

32.

Nucleonics

~2 ~4 16 ~dsorptmn and desorption phenomena and their role m particle accelerators and space s(mulators. See ,~bstr N o 369 32 16 The desorptmn of g a s from the vacuum c h a m b e r of the 2-Me~ electron storage ringer at C E R N . See A b s t r N o 365 32 434. The geometrical focusing of high velocity corpuscular rays e m a n a t i n g front cathodes of arbitrar~ size. (German i) A ne~ type ol .~-parucle beam g e n e r a t o r has been developed a n d invest,gated ]n detad It is show n that by m e a n s o f an a r r a n g e m e n t o f s.~ m m e m c a l d ~ k s fitted ~v(th shts acting as a n n u l a r c a t h o d e s . the x parucles can be focused by the geomelr.~ of the ~et-up so a~