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Structure and growth morphology of SiOx films deposited on NaCl (001) faces
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World Abstracts on Microelectronics and Reliability
Signature analysis of dispatch schemes in wafer fabrication. JUDITH E. DAYHOFFand ROBERTW. ATHERTON. IEEE Trans. Comport. Hybrids mf9 TechnoL CHMT-9 (4), 518 (1986). Signature analysis is used to characterize lot dispatch priority schemes in wafer fabrication, a complex manufacturing operation. A number of idealized dispatch schemes are evaluated using a comprehensive assessment criterion. The production system analyzed in this paper is large in comparison to previous studies on manufacturing scheduling. Real dispatch schemes depend strongly on the characteristics of human implementation. Signature analysis provides the basis for measuring organizational performance by comparing formal dispatch schemes with each other and with actual dispatch schemes used in wafer fabrication. Signature analysis: simulation of inventory, cycle time, and throughput trade-offs in wafer fabrication. ROBERT W. ATHERTON and JUDITH E. DAYHOFF. 1EEE Trans. Comport. Hybrids mfq Technol. CHMT-9 (4), 498 (1986). Signature analysis provides a powerful heuristic method for the plan-
ning of simulation experiments and for the interpretation of simulation results. Signature analysis has been developed within the context of simulation of the dynamics of wafer fabrication operations in integrated circuit manufacturing. Graphical display of cycle time, throughput, and inventory provides a "signature" of the dynamic behavior of a given operation. Signatures of manufacturing operations are used to address several management issues. The effects of unplanned equipment failures are shown. The variation of signatures with initial inventory and with different time frames for management decisions is illustrated. The extension of signature analysis to other simulations is indicated.
GaAs monolithic microwave integrated circuits. K. WILSON. Electron. Power, 249 (April 1987). MMICs have been demonstrated for a wide variety of circuit functions in the frequency range 1 100 GHz and are now becoming available for use in microwave systems.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Structure and growth morphology of SiO x films deposited on NaCI (001) faces. M. EL HIT1, P. B. BARNAand F. M. REICHA. Vacuum 37 (1/2), 97 (1987). The very early stages ofSiO x film formation were studied on NaC1 (100) surfaces by evaporating SiO. The selective nucleation by SiOx on the surface defects resulted in decoration patterns by developing threedimensional SiO~ grains. The experiments were extended to get information both on the morphological peculiarities of SiO x grains and on the activated condensation of Au on a NaC1 surface covered by a thin SiO~ film. UV radiation effects of argon plasma on Si-SiO 2 structures. J. KASSABOV,E. ATANASSOVA,D. DIMITROVand E. GORANOVA. Microelectron. J. 18 (2), 21 (1987). Radiation damage is investigated in Si-SiO 2 structures with thin (34nm) SiO 2 film exposed to the action of the ultraviolet component of a "soft" argon plasma. To obtain information about the electrical properties of the structures, inversion channel current voltage characteristics are measured. It is found that low energy ultraviolet radiation (up to 8.7 eV) from the lowtemperature argon plasma creates shallow acceptor-like interface states. As a result of the screening effect of the trapped electrons in these states a significant increase of the channel mobility is observed. It is assumed that the plasma-induced
defects are connected with breaking of weak and strained bonds in the oxide and at the Si-SiO 2 interface. The temperature dependence of the channel mobility is interpreted in terms of several scattering mechanisms.
A theoretical study of the electronic structure for twin stacking faults in silicon. GONG XIN GAO, ZHENG QING-QI, HAN Rt;SHAN and YANG WEI-SHENG. Solid St. Commun. 62 (2), 65 (1987). The electronic structure and atomic relaxation of twin stacking faults along [111] direction in silicon are studied within the local density approximation with first principle cluster model self-consistent calculations. The atomic relaxation obtained from the view point of total energy is in agreement with experiments. The electronic structure, defect levels, and fault energy of twin stacking faults in silicon are also discussed. Impurity induced vibrations in light doped silicon. Fu YING, Xu WENLAN and Zr~NG ZHAOBO. Solid St. Commun. 62 (3), 163 (1987). The local densities of states (LDOSs) are calculated by use of the recursion method for the lithium or phosphorous-compensated boron-doped crystalline silicon, The impurity induced local and quasi-local vibrational modes are studied. Good agreement between experiments and calculation is achieved.
8. THICK- AND THIN-FILM COMPONENTS, HYBRID CIRCUITS AND MATERIALS A model of substrate surface roughness effect on the electrical properties of thin films. L. TOTH. Vacuum 37 (1/2), 102 (1987). In situ resistance and thickness measurements during deposition of thin NiCr films into various substrates revealed an effect of the substrate on the electrical transport parameters. On the rough surface of ceramic substrates the thickness dependence of the resistivity could be well fitted to the simple Fuchs-Sondheimer size effect model, however, both the resistivity Po and the mean free path 2 o was higher than in the case of smooth glass substrates. It is shown that these deviations appearing as a pseudo size effect are mainly caused by the differences in the surface geometry of the substrates. Nevertheless, the material and crystal structure of the substrate have also an influence on the growth mechanism and, consequently, on the structure and electrical properties of the films. A simple model of this virtual size effect of the electrical resistivity in thin films caused by the surface roughness of the substrate is presented.
Black aluminium films. R. RIESENBERG and G. SCHMIDT. Vacuum 37 (1/2), 183 (1987). Black aluminium films were prepared by evaporation in a high vacuum. The films are characterized by measurement of light reflection and scattering and by SEM-pictures of the surface morphology which show many hillocks. The formation of the hillocks is considered to be from a relaxation process arising from a compressive stress in the films. Electrical properties of Cr-AI alloy thin films. P. JUICHIRO OZAWA, SADAO YOSHIZAKI, SHIZUKA TAKEYAMA, TOSHIO ENJO and KENJI IKEUCHI. 1EEE Trans. Compon. Hybrids mJ~ Technol. CHMT-9 (4), 391 (1986). Electrical properties of Cr-A1 alloy thin films which were deposited on 96-percent alumina substrates by using resistance-heated evaporation have been investigated. The resistivity of the thin films took a maximum value (2.2x 1 0 - 5 ~ . m ) at 25 at% A1. The temperature coefficient of resistance (TCR) of the thin films
World Abstracts on Microelectronics and Reliability
Signature analysis of dispatch schemes in wafer fabrication. JUDITH E. DAYHOFFand ROBERTW. ATHERTON. IEEE Trans. Comport. Hybrids mf9 TechnoL CHMT-9 (4), 518 (1986). Signature analysis is used to characterize lot dispatch priority schemes in wafer fabrication, a complex manufacturing operation. A number of idealized dispatch schemes are evaluated using a comprehensive assessment criterion. The production system analyzed in this paper is large in comparison to previous studies on manufacturing scheduling. Real dispatch schemes depend strongly on the characteristics of human implementation. Signature analysis provides the basis for measuring organizational performance by comparing formal dispatch schemes with each other and with actual dispatch schemes used in wafer fabrication. Signature analysis: simulation of inventory, cycle time, and throughput trade-offs in wafer fabrication. ROBERT W. ATHERTON and JUDITH E. DAYHOFF. 1EEE Trans. Comport. Hybrids mfq Technol. CHMT-9 (4), 498 (1986). Signature analysis provides a powerful heuristic method for the plan-
ning of simulation experiments and for the interpretation of simulation results. Signature analysis has been developed within the context of simulation of the dynamics of wafer fabrication operations in integrated circuit manufacturing. Graphical display of cycle time, throughput, and inventory provides a "signature" of the dynamic behavior of a given operation. Signatures of manufacturing operations are used to address several management issues. The effects of unplanned equipment failures are shown. The variation of signatures with initial inventory and with different time frames for management decisions is illustrated. The extension of signature analysis to other simulations is indicated.
GaAs monolithic microwave integrated circuits. K. WILSON. Electron. Power, 249 (April 1987). MMICs have been demonstrated for a wide variety of circuit functions in the frequency range 1 100 GHz and are now becoming available for use in microwave systems.
7. SEMICONDUCTOR INTEGRATED CIRCUITS, DEVICES AND MATERIALS Structure and growth morphology of SiO x films deposited on NaCI (001) faces. M. EL HIT1, P. B. BARNAand F. M. REICHA. Vacuum 37 (1/2), 97 (1987). The very early stages ofSiO x film formation were studied on NaC1 (100) surfaces by evaporating SiO. The selective nucleation by SiOx on the surface defects resulted in decoration patterns by developing threedimensional SiO~ grains. The experiments were extended to get information both on the morphological peculiarities of SiO x grains and on the activated condensation of Au on a NaC1 surface covered by a thin SiO~ film. UV radiation effects of argon plasma on Si-SiO 2 structures. J. KASSABOV,E. ATANASSOVA,D. DIMITROVand E. GORANOVA. Microelectron. J. 18 (2), 21 (1987). Radiation damage is investigated in Si-SiO 2 structures with thin (34nm) SiO 2 film exposed to the action of the ultraviolet component of a "soft" argon plasma. To obtain information about the electrical properties of the structures, inversion channel current voltage characteristics are measured. It is found that low energy ultraviolet radiation (up to 8.7 eV) from the lowtemperature argon plasma creates shallow acceptor-like interface states. As a result of the screening effect of the trapped electrons in these states a significant increase of the channel mobility is observed. It is assumed that the plasma-induced
defects are connected with breaking of weak and strained bonds in the oxide and at the Si-SiO 2 interface. The temperature dependence of the channel mobility is interpreted in terms of several scattering mechanisms.
A theoretical study of the electronic structure for twin stacking faults in silicon. GONG XIN GAO, ZHENG QING-QI, HAN Rt;SHAN and YANG WEI-SHENG. Solid St. Commun. 62 (2), 65 (1987). The electronic structure and atomic relaxation of twin stacking faults along [111] direction in silicon are studied within the local density approximation with first principle cluster model self-consistent calculations. The atomic relaxation obtained from the view point of total energy is in agreement with experiments. The electronic structure, defect levels, and fault energy of twin stacking faults in silicon are also discussed. Impurity induced vibrations in light doped silicon. Fu YING, Xu WENLAN and Zr~NG ZHAOBO. Solid St. Commun. 62 (3), 163 (1987). The local densities of states (LDOSs) are calculated by use of the recursion method for the lithium or phosphorous-compensated boron-doped crystalline silicon, The impurity induced local and quasi-local vibrational modes are studied. Good agreement between experiments and calculation is achieved.
8. THICK- AND THIN-FILM COMPONENTS, HYBRID CIRCUITS AND MATERIALS A model of substrate surface roughness effect on the electrical properties of thin films. L. TOTH. Vacuum 37 (1/2), 102 (1987). In situ resistance and thickness measurements during deposition of thin NiCr films into various substrates revealed an effect of the substrate on the electrical transport parameters. On the rough surface of ceramic substrates the thickness dependence of the resistivity could be well fitted to the simple Fuchs-Sondheimer size effect model, however, both the resistivity Po and the mean free path 2 o was higher than in the case of smooth glass substrates. It is shown that these deviations appearing as a pseudo size effect are mainly caused by the differences in the surface geometry of the substrates. Nevertheless, the material and crystal structure of the substrate have also an influence on the growth mechanism and, consequently, on the structure and electrical properties of the films. A simple model of this virtual size effect of the electrical resistivity in thin films caused by the surface roughness of the substrate is presented.
Black aluminium films. R. RIESENBERG and G. SCHMIDT. Vacuum 37 (1/2), 183 (1987). Black aluminium films were prepared by evaporation in a high vacuum. The films are characterized by measurement of light reflection and scattering and by SEM-pictures of the surface morphology which show many hillocks. The formation of the hillocks is considered to be from a relaxation process arising from a compressive stress in the films. Electrical properties of Cr-AI alloy thin films. P. JUICHIRO OZAWA, SADAO YOSHIZAKI, SHIZUKA TAKEYAMA, TOSHIO ENJO and KENJI IKEUCHI. 1EEE Trans. Compon. Hybrids mJ~ Technol. CHMT-9 (4), 391 (1986). Electrical properties of Cr-A1 alloy thin films which were deposited on 96-percent alumina substrates by using resistance-heated evaporation have been investigated. The resistivity of the thin films took a maximum value (2.2x 1 0 - 5 ~ . m ) at 25 at% A1. The temperature coefficient of resistance (TCR) of the thin films