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1369. Evaporation of silicon to obtain epitaxial films
Classified
abstracts
13561371
J Bailleul-Langlais and P Pasquet, J. Phys, 249-250,
26, Suppl
12,
1965,
(in French).
tion concerning the influence of time on the vaporization rate of selected compositions is discussed. D L Deadmore, Rep NASA-TM-X-52014, (NASA Lewis Res Center, Cleveland,
30. Evaporation
and sputtering
30 : 10 Development trends in high-vacuum technology. See abstract number 1213. 30 1356. Compact Electron-beam gun for pressure to 10 micron. (USA) Model DEG-801 shielded electron-beam gun is claimed to vaporize any known material and operate at pressures as high as 1O-2 torr. High-pressure operating range of gun, which is reported to produce temperatures in excess of 6500”F, is increased by ground-potential shield around input leads. Shielding inhibits gas ionization and arcing, and permits evaporation of pure and refractory materials in active atmosphere. Anon, Denton Vacuum Inc, 803 Fellowship Road, Cherry Hill, New 30 1357. Evaporation on plastics in high vacuum.
: 43
(Germany)
A review of vacuum evaporation methods and applications. H Schutz, Plastverarbeiter, I6 (S), 1965, 459-466, (in German). 30 : 37 1358. Preparation of atomically clean surfaces of Si and Ge by heating
in vacuum. (USA) Low-energy electron diffraction patterns indicate that atomically clean surfaces of silicon and germanium can be obtained by heat treatments in vacua. In the case of silicon, lower temperatures and shorter duration of heat treatment were required, compared with previously resported values. In the treatment of germanium it was shown that ion bombardment is unnecessary. In both cases, the surfaces obtained were not planar, frequently pitted and sometimes heavily pitted. F Jona, US Govt Res Develop Repts, 41 (4), 25 Feb 1966, AD-625 993, 3 pages. 30 : 56 1359. Thin film microcircuit interconnections.
(USA)
A completed programme which studied materials, fabrication processes and performance of interfacial connections and crossovers for thin film circuits is described. Test patterns were such as to allow study of interconnections and crossovers with minimal intrusion from properties of contacts and the thin films. Design criteria for a number of materials were developed including fabrication processes and vacuum apparatus. The accuracy of the criteria established was confirmed by a statistical survey of the performance of interconnectors and crossovers in military environments. As a result of this programme the various material combinations are placed in forced rank according to their relative merits. B G Bender and M Yang, Hughes Aircraft Co, Newport Beach, Calif, Ott
1965, 242 pages. 30
surface of solids by methods of ultrahigh vacuum electron diffraction and electron microscopy. A list of publications is presented for the following categories: transmission electron diffraction of films deposited in ultrahigh vacuum, behaviour under heat treatment and the nucleation and growth of the oxide phase; reflection electron diffraction on single crystals and the nucleation and growth of the oxide phase on different crystal faces; electron microscope characterization of the structure and surface of films deposited and replicated in ultrahigh vacuum; nucleation and growth of crystallites deposited from the vapour phase on clean substrates; and replication of single crystal surfaces by electron by ultrahigh vacuum processes for investigations microscopy. B M Siegel, Cornell Univ, Ithaca, NY, Dept of Engineering, Physics, 1966,
7 pages. 30
: 47
1361. Vaaorization of tantalum carbide-hafnium carbide solid solutions at 2500 tb 3000°K. (USA) The vaoorization rates in vacuum of hot-pressed HfC-TaC and solid solutions of these two carbides were determined by using a Langmuir type method. The results show that a composition near 70 mol per cent TaC -30 mol per cent HfC exhibits the lowest vaporization rate of any composition within this pseudobinary system. Informa460
The effects of deposition rate, film thickness and substrate temperature on the mean crystallite size in films of vacuum evaporated polycrystalline iron and permalloy films deposited on optical flat glass substrates were investigated. Crystallite size was virtually independent of deposition rate in a given range, and increased only slightly with increasing film thickness. Substrate temperature was found to be the most influential factor giving a very strong increase in crystallite size as the substrate temperature rose beyond 300°C. H M Wiedenmann and H Hoffmann, Z Angew Phys, 18 (5-6), 12th Apr 1965, 502-506,
(in German). 30 (USA)
The new technique of asymmetric a-c sputtering has been evaluated for the deposition of Ta films in Ar, O,-Ar, and N,-Ar gas mixtures. This method utilizes a lower sputtering potential on the Ta cathode. F Vratny and D J Harrington, J Electrochem Sot, 112, (5), May 1966, 484-489. 30 1364. Preparation and characterization of evaporated boron films. (USA)
A method of preparing high purity, evaporated boron films by direct ohmic heating of elemental boron filaments in ultrahigh-vacuum is described. P E McElligott and R W Roberts, J Appl Phys, 37,1966,1992I99 7. 30 1365. Deposition of germanium films by sputtering.
(USA)
Both n- and p-type germanium films were deposited epitaxially by using asymmetric a-c sputtering. The quantity of the films was found to be strongly dependent on the substrate temperature and the voltage during both the cleaning and the sputtering cycles. K E Haq, J Electrochem Sot, 112 (5), May 1966, 500-502. 30 1366. Vapour-deposited thin film piezoelectric transducers.
(USA)
A new vapour deposition technique has been developed for the production of insulating thin film CdS and ZnS piezoelectric transducers. J De Klerk and E F Kelly, Westinghouse Research Laboratories, Pittsburg,
Pa, Feb I965,
27 pages.
1367. Vacuum deposition of experimental thin film transistors.
Description of Weimer’s technique large batch of transistors to ensure the properties of a semi-conducting A C Tickle, Solid-State Electronics,
30 (USA)
for simultaneously fabricating a minimization of the variation in film. 9, Feb 1966,
169-I
71.
: 63
1360. Investigations of atomic phenomena occurring on or near the
A D-620520,
30 : 41 1362. Structure and growth of polycrystalline Fe and permalloy thin films. (Germany)
1363. Tantalum film deposited by asymmetric a-c sputtering.
.Jerse.v.
A D-628225,
Ohio).
1368. Epitaxial growth of silicon on hexagonal silicon carbide. R L Tallman, et al, J Appl Phys, 37, 1966, 1588-1595.
30 (USA) 30
1369. Evaporation of silicon to obtain epitaxial films.
(USSR)
Description of a method of obtaining high-purity epitaxial films by heating with an electric current. In this method the silicon is evaporated from the molten zone formed at the contact between two silicon electrodes and held in place between them by surface tension. A I Petrin and G A Korov, Kristallograjia, 10, 1965, 754-756, (in Russian). 30
Material thickness monitors and ratemeters for vacuum evaporation. (USA) Bakeable instruments monitoring the thickness of vacuum evaporation films have been devised. They consist of damped pivoted rotors that are turned by the momentum of the incident vapour stream. Anon, J Sci Instrum, 43, March 1966, 182-185. 1370.
1371. Growth and structure of evaporated silicon layers.
Silicon, on heating reacts with residual may grow epitaxially. in etch pits produced D J D Thomas, Phyb
30 (Germany)
in vacuum at pressure of less than lO-8 mm, organic vapours to form silicon carbide which Growth of evaporated silicon layers commences during the annealing pretreatment. Status Solidi, 13 (2). 1966, 359-372.
abstracts
13561371
J Bailleul-Langlais and P Pasquet, J. Phys, 249-250,
26, Suppl
12,
1965,
(in French).
tion concerning the influence of time on the vaporization rate of selected compositions is discussed. D L Deadmore, Rep NASA-TM-X-52014, (NASA Lewis Res Center, Cleveland,
30. Evaporation
and sputtering
30 : 10 Development trends in high-vacuum technology. See abstract number 1213. 30 1356. Compact Electron-beam gun for pressure to 10 micron. (USA) Model DEG-801 shielded electron-beam gun is claimed to vaporize any known material and operate at pressures as high as 1O-2 torr. High-pressure operating range of gun, which is reported to produce temperatures in excess of 6500”F, is increased by ground-potential shield around input leads. Shielding inhibits gas ionization and arcing, and permits evaporation of pure and refractory materials in active atmosphere. Anon, Denton Vacuum Inc, 803 Fellowship Road, Cherry Hill, New 30 1357. Evaporation on plastics in high vacuum.
: 43
(Germany)
A review of vacuum evaporation methods and applications. H Schutz, Plastverarbeiter, I6 (S), 1965, 459-466, (in German). 30 : 37 1358. Preparation of atomically clean surfaces of Si and Ge by heating
in vacuum. (USA) Low-energy electron diffraction patterns indicate that atomically clean surfaces of silicon and germanium can be obtained by heat treatments in vacua. In the case of silicon, lower temperatures and shorter duration of heat treatment were required, compared with previously resported values. In the treatment of germanium it was shown that ion bombardment is unnecessary. In both cases, the surfaces obtained were not planar, frequently pitted and sometimes heavily pitted. F Jona, US Govt Res Develop Repts, 41 (4), 25 Feb 1966, AD-625 993, 3 pages. 30 : 56 1359. Thin film microcircuit interconnections.
(USA)
A completed programme which studied materials, fabrication processes and performance of interfacial connections and crossovers for thin film circuits is described. Test patterns were such as to allow study of interconnections and crossovers with minimal intrusion from properties of contacts and the thin films. Design criteria for a number of materials were developed including fabrication processes and vacuum apparatus. The accuracy of the criteria established was confirmed by a statistical survey of the performance of interconnectors and crossovers in military environments. As a result of this programme the various material combinations are placed in forced rank according to their relative merits. B G Bender and M Yang, Hughes Aircraft Co, Newport Beach, Calif, Ott
1965, 242 pages. 30
surface of solids by methods of ultrahigh vacuum electron diffraction and electron microscopy. A list of publications is presented for the following categories: transmission electron diffraction of films deposited in ultrahigh vacuum, behaviour under heat treatment and the nucleation and growth of the oxide phase; reflection electron diffraction on single crystals and the nucleation and growth of the oxide phase on different crystal faces; electron microscope characterization of the structure and surface of films deposited and replicated in ultrahigh vacuum; nucleation and growth of crystallites deposited from the vapour phase on clean substrates; and replication of single crystal surfaces by electron by ultrahigh vacuum processes for investigations microscopy. B M Siegel, Cornell Univ, Ithaca, NY, Dept of Engineering, Physics, 1966,
7 pages. 30
: 47
1361. Vaaorization of tantalum carbide-hafnium carbide solid solutions at 2500 tb 3000°K. (USA) The vaoorization rates in vacuum of hot-pressed HfC-TaC and solid solutions of these two carbides were determined by using a Langmuir type method. The results show that a composition near 70 mol per cent TaC -30 mol per cent HfC exhibits the lowest vaporization rate of any composition within this pseudobinary system. Informa460
The effects of deposition rate, film thickness and substrate temperature on the mean crystallite size in films of vacuum evaporated polycrystalline iron and permalloy films deposited on optical flat glass substrates were investigated. Crystallite size was virtually independent of deposition rate in a given range, and increased only slightly with increasing film thickness. Substrate temperature was found to be the most influential factor giving a very strong increase in crystallite size as the substrate temperature rose beyond 300°C. H M Wiedenmann and H Hoffmann, Z Angew Phys, 18 (5-6), 12th Apr 1965, 502-506,
(in German). 30 (USA)
The new technique of asymmetric a-c sputtering has been evaluated for the deposition of Ta films in Ar, O,-Ar, and N,-Ar gas mixtures. This method utilizes a lower sputtering potential on the Ta cathode. F Vratny and D J Harrington, J Electrochem Sot, 112, (5), May 1966, 484-489. 30 1364. Preparation and characterization of evaporated boron films. (USA)
A method of preparing high purity, evaporated boron films by direct ohmic heating of elemental boron filaments in ultrahigh-vacuum is described. P E McElligott and R W Roberts, J Appl Phys, 37,1966,1992I99 7. 30 1365. Deposition of germanium films by sputtering.
(USA)
Both n- and p-type germanium films were deposited epitaxially by using asymmetric a-c sputtering. The quantity of the films was found to be strongly dependent on the substrate temperature and the voltage during both the cleaning and the sputtering cycles. K E Haq, J Electrochem Sot, 112 (5), May 1966, 500-502. 30 1366. Vapour-deposited thin film piezoelectric transducers.
(USA)
A new vapour deposition technique has been developed for the production of insulating thin film CdS and ZnS piezoelectric transducers. J De Klerk and E F Kelly, Westinghouse Research Laboratories, Pittsburg,
Pa, Feb I965,
27 pages.
1367. Vacuum deposition of experimental thin film transistors.
Description of Weimer’s technique large batch of transistors to ensure the properties of a semi-conducting A C Tickle, Solid-State Electronics,
30 (USA)
for simultaneously fabricating a minimization of the variation in film. 9, Feb 1966,
169-I
71.
: 63
1360. Investigations of atomic phenomena occurring on or near the
A D-620520,
30 : 41 1362. Structure and growth of polycrystalline Fe and permalloy thin films. (Germany)
1363. Tantalum film deposited by asymmetric a-c sputtering.
.Jerse.v.
A D-628225,
Ohio).
1368. Epitaxial growth of silicon on hexagonal silicon carbide. R L Tallman, et al, J Appl Phys, 37, 1966, 1588-1595.
30 (USA) 30
1369. Evaporation of silicon to obtain epitaxial films.
(USSR)
Description of a method of obtaining high-purity epitaxial films by heating with an electric current. In this method the silicon is evaporated from the molten zone formed at the contact between two silicon electrodes and held in place between them by surface tension. A I Petrin and G A Korov, Kristallograjia, 10, 1965, 754-756, (in Russian). 30
Material thickness monitors and ratemeters for vacuum evaporation. (USA) Bakeable instruments monitoring the thickness of vacuum evaporation films have been devised. They consist of damped pivoted rotors that are turned by the momentum of the incident vapour stream. Anon, J Sci Instrum, 43, March 1966, 182-185. 1370.
1371. Growth and structure of evaporated silicon layers.
Silicon, on heating reacts with residual may grow epitaxially. in etch pits produced D J D Thomas, Phyb
30 (Germany)
in vacuum at pressure of less than lO-8 mm, organic vapours to form silicon carbide which Growth of evaporated silicon layers commences during the annealing pretreatment. Status Solidi, 13 (2). 1966, 359-372.